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6 Dec 2004

Volume 85, Issue 23, pp. 5499-5791

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 5694 (2004); http://dx.doi.org/10.1063/1.1828575 (3 pages)

M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur
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Patterned growth of pentacene

Soeren Steudel, Dimitri Janssen, Stijn Verlaak, Jan Genoe, and Paul Heremans

Appl. Phys. Lett. 85, 5550 (2004); http://dx.doi.org/10.1063/1.1832732 (3 pages) | Cited 23 times

Online Publication Date: 8 December 2004

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We propose a way of patterning organic small molecule thin films without requiring a hardmask and therefore more compatible with printing technologies. Active and passive areas for transistors are predefined by different surface chemistries. The subsequent growth takes place under conditions that cause the formation of a high mobility two-dimensional film in the active area and a disconnected three-dimensional film or no film in the passive area. This concept is founded on the basic theory of nucleation of organic small molecules on inert substrates and applied to the growth of patterned pentacene layers.
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81.05.Hd Other semiconductors
68.55.A- Nucleation and growth
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.30.Tv Field effect devices

Near-infrared intersubband transitions in delta-doped InAs∕AlSb multi-quantum wells

S. Sasa, Y. Nakajima, M. Nakai, M. Inoue, D. C. Larrabee, and J. Kono

Appl. Phys. Lett. 85, 5553 (2004); http://dx.doi.org/10.1063/1.1833559 (3 pages) | Cited 2 times

Online Publication Date: 8 December 2004

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Intersubband transitions (ISBTs) in narrow InAs∕AlSb multiple quantum wells (MQWs) were investigated for well widths, d, ranging from 5 nm down to 1.8 nm with 10, 20, or 60 periods. In order to observe a strong ISBT signal, a heavy silicon doping was made in each InAs quantum well. Delta doping was employed for the narrowest wells to prevent silicon incorporation into the AlSb barrier layers. As the well width decreased, the ISBT signal of the MQWs decreased. However, it persisted down to d=2.1 nm with a sheet doping density in each quantum well of 9×1012 cm−2 and 60 periods. The ISBT signal observed for d=2.1 nm was peaked at an energy of 650 and 670 meV at 300 and 77 K, respectively. These are the highest energy values ever observed for ISBTs in InAs∕AlSb MQWs.
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78.67.De Quantum wells
73.63.Hs Quantum wells
78.30.Fs III-V and II-VI semiconductors
61.72.uj III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.S- Impurities in crystals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Continuous liquid crystal pretilt control through textured substrates

Fuk Kay Lee, Baoshe Zhang, Ping Sheng, Hoi Sing Kwok, and Ophelia K. C. Tsui

Appl. Phys. Lett. 85, 5556 (2004); http://dx.doi.org/10.1063/1.1833552 (3 pages) | Cited 20 times

Online Publication Date: 8 December 2004

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Reliable control on the pretilt alignment of nematic liquid crystal (LC) in the 30°–50° range is a well-known challenge. An unconventional approach, involving microtextured surfaces with domains favoring dissimilar LC alignments, has recently demonstrated applicability in bi- and tristable displays. These textured domains realize the so-called frustrated boundary condition in which the LC elastic energy built-up (frustration) can drive the LC alignment into macroscopic uniformity. Here we show that one can harness the frustrated boundary to achieve variable LC pretilt control up to 40°.
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42.70.Df Liquid crystals
61.30.Hn Surface phenomena: alignment, anchoring, anchoring transitions, surface-induced layering, surface-induced ordering, wetting, prewetting transitions, and wetting transitions
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
81.40.Jj Elasticity and anelasticity, stress-strain relations
64.70.M- Transitions in liquid crystals
61.72.Mm Grain and twin boundaries
68.35.B- Structure of clean surfaces (and surface reconstruction)

Phase transformations induced in relaxed amorphous silicon by indentation at room temperature

B. Haberl, J. E. Bradby, M. V. Swain, J. S. Williams, and P. Munroe

Appl. Phys. Lett. 85, 5559 (2004); http://dx.doi.org/10.1063/1.1832757 (3 pages) | Cited 17 times

Online Publication Date: 8 December 2004

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The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical nanoindentation in both relaxed (annealed) and unrelaxed (as-implanted) a-Si. Interestingly, phase transformations were clearly observed in the relaxed state, with the load–unload curves from these samples displaying characteristic discontinuities and cross-sectional transmission electron microscopy images indicating the presence of high-pressure crystalline phases Si-III and Si-XII following pressure release. Thus, an amorphous to crystalline phase transformation has been induced by indentation at room temperature. In contrast, no evidence of a phase transformation was observed in unrelaxed a-Si, which appeared to deform via plastic flow of the amorphous phase. Furthermore, in situ electrical measurements clearly indicate the presence of a metallic Si phase during loading of relaxed a-Si but no such behavior was observed for unrelaxed a-Si
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81.05.Cy Elemental semiconductors
81.40.Lm Deformation, plasticity, and creep
64.70.K- Solid-solid transitions
62.50.-p High-pressure effects in solids and liquids
62.20.F- Deformation and plasticity
61.72.uf Ge and Si
61.72.Cc Kinetics of defect formation and annealing
68.37.Lp Transmission electron microscopy (TEM)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Depth distribution of the strain in the GaN layer with low-temperature AlN interlayer on Si(111) substrate studied by Rutherford backscattering/channeling

Y. Lu, G. W. Cong, X. L. Liu, D. C. Lu, Z. G. Wang, and M. F. Wu

Appl. Phys. Lett. 85, 5562 (2004); http://dx.doi.org/10.1063/1.1830679 (3 pages) | Cited 3 times

Online Publication Date: 8 December 2004

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The depth distribution of the strain-related tetragonal distortion eT in the GaN epilayer with low-temperature AlN interlayer (LT-AlN IL) on Si(111) substrate is investigated by Rutherford backscattering and channeling. The samples with the LT-AlN IL of 8 and 16 nm thickness are studied, which are also compared with the sample without the LT-AlN IL. For the sample with 16-nm-thick LT-AlN IL, it is found that there exists a step-down of eT of about 0.1% in the strain distribution. Meanwhile, the angular scan around the normal GaN 〈0001〉 axis shows a tilt difference about 0.01° between the two parts of GaN separated by the LT-AlN IL, which means that these two GaN layers are partially decoupled by the AlN interlayer. However, for the sample with 8-nm-thick LT-AlN IL, neither step-down of eT nor the decoupling phenomenon is found. The 0.01° decoupled angle in the sample with 16-nm-thick LT-AlN IL confirms the relaxation of the LT-AlN IL. Thus the step-down of eT should result from the compressive strain compensation brought by the relaxed AlN interlayer. It is concluded that the strain compensation effect will occur only when the thickness of the LT-AlN IL is beyond a critical thickness.
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68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
61.85.+p Channeling phenomena (blocking, energy loss, etc.)
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Wannier orbitals and bonding properties of interstitial and antisite defects in GaN

F. Gao, E. J. Bylaska, A. El-Azab, and W. J. Weber

Appl. Phys. Lett. 85, 5565 (2004); http://dx.doi.org/10.1063/1.1827932 (3 pages) | Cited 1 time

Online Publication Date: 8 December 2004

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Intrinsic interstitial and antisite defects in GaN have been studied using density functional theory (DFT), and their configurations, electronic structures, and bonding properties have been characterized using the Wannier function. All N interstitial configurations eventually transform into N–N split interstitials, between which two π orbitals exist. The relaxation of a Ga antisite defect also leads to the formation of a N–N split configuration; however, its local Wannier orbitals are remarkably different from the N–N split interstitial. The different local Wannier orbitals around Ga interstitial configurations demonstrate that Ga interstitials are critical defects in GaN. The most striking feature is that Ga–Ga〈11math0〉 split interstitials can bridge the gap between nonbonded Ga atoms, thereby leading to a chain of four metallic-like-bonded Ga atoms along the 〈11math0〉 direction in GaN, which may exhibit quantum properties.
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71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.72.J- Point defects and defect clusters
71.55.Eq III-V semiconductors

Structural and optical properties of 6,13-pentacenequinone thin films

D. K. Hwang, Kibum Kim, Jae Hoon Kim, Seongil Im, Duk-Young Jung, and Eugene Kim

Appl. Phys. Lett. 85, 5568 (2004); http://dx.doi.org/10.1063/1.1832759 (3 pages) | Cited 12 times

Online Publication Date: 8 December 2004

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We report on the structural and optical properties of 6,13-pentacenequinone thin films deposited on n-Si substrates by thermal evaporation at room temperature. X-ray diffraction data indicate excellent crystallinity but the films have two crystalline phases mixed. Photoluminescence (PL) spectra exhibited double peaks at 1.97 and 2.09 eV while the corresponding (double) peaks, associated with the highest occupied molecular orbital–lowest unoccupied molecular orbital transition, were also observed from direct absorption spectra at 2.94 and 3.11 eV. The yellow PL band was quite intense under UV illumination; the intensity was comparable to that from Tris-(8-hydroxyquinoline) aluminum (Alq3) thin films. A large Stokes shift of ∼1 eV found in our 6,13-pentacenequinone thin films suggests potential applications to UV-detectors and UV-detecting cards.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.05.Hd Other semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
78.66.Qn Polymers; organic compounds
78.66.Li Other semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
78.55.Kz Solid organic materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
61.82.Pv Polymers, organic compounds

Hardness of cubic spinel Si3N4

Julong He, Licong Guo, Dongli Yu, Riping Liu, Yongjun Tian, and Hui-Tian Wang

Appl. Phys. Lett. 85, 5571 (2004); http://dx.doi.org/10.1063/1.1832756 (3 pages) | Cited 20 times

Online Publication Date: 8 December 2004

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The hardness of cubic spinel Si3N4 was calculated by using our microscopic model of hardness combined with first principles calculation. The calculated Vickers hardness is only 33.3 GPa in good agreement with its experimental values reported recently, indicating that the cubic spinel Si3N4 is not a superhard material. Our calculation results also implicate a more important fact that predicting the hardness of a material based on its bulk modulus or shear modulus is impertinent.
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81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness

Detection of subnanometric layer at the Si∕SiO2 interface and related strain measurements

P. Donnadieu, E. Blanquet, N. Jakse, and P. Mur

Appl. Phys. Lett. 85, 5574 (2004); http://dx.doi.org/10.1063/1.1831561 (3 pages) | Cited 2 times

Online Publication Date: 8 December 2004

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The structure of the Si∕SiO2 interface was investigated by high-resolution transmission electron microscopy (HRTEM) and electron diffraction, which appears as an efficient tool to detect any organized layer at the interface. Using HRTEM image analysis, a 1‐nm-thick distorted Si layer is identified at the interface, the local deformation corresponds to a compressive stress of approximately 2 GPa.
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81.05.Cy Elemental semiconductors
68.35.Ct Interface structure and roughness
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
68.37.Lp Transmission electron microscopy (TEM)
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Influence of defects on the kinetic of C49–C54 TiSi2 transformation

F. La Via, F. Mammoliti, and M. G. Grimaldi

Appl. Phys. Lett. 85, 5577 (2004); http://dx.doi.org/10.1063/1.1831559 (3 pages)

Online Publication Date: 8 December 2004

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TiSi2 C49 thin films with different concentrations of defects have been prepared by conventional annealing, in the 460–540 °C temperature range, of a Ti films deposited on a polycrystalline Si layer. The residual sheet resistance of the C49 films decreased with increasing both the annealing temperature and the annealing duration indicating the occurrence of defect annealing at higher temperature and∕or longer times. A successive annealing at 650 °C was used to promote the C49–C54 transition and the transformation rate was measured by in situ sheet resistance measurements. The C49–C54 transition time decreased with the residual sheet resistance of the C49 phase. The activation energy for the transformation increased from 3.09±0.75 to 6.12±0.96 eV with increasing the defect concentration in the C49 phase. This strong dependence can explain the large variation of the kinetic results reported in the literature.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Gh Other heat and thermomechanical treatments
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder

Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H–SiC(0001)

S. Hazra, S. Chakraborty, and P. T. Lai

Appl. Phys. Lett. 85, 5580 (2004); http://dx.doi.org/10.1063/1.1829385 (3 pages) | Cited 5 times

Online Publication Date: 8 December 2004

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Thermally grown silicon oxide films on p-type 6H–silicon carbide substrate under different oxidation and nitridation conditions have been characterized by x-ray reflectivity technique. An electron density profile obtained from the analysis of the x-ray reflectivity data shows that the thickness, density of the oxide film, and structure of the oxide-SiC interface strongly depend on the different growth conditions. In particular, the density of the oxide film for all samples other than that grown in NO is found to be much lower and also not fixed within. It is maximum at the interface and gradually decreases toward the top in all samples except for the sample grown in O2 followed by NO nitridation. For the latter, a very low density at the interface region has been observed. The sample grown in NO shows the best performance in capacitance–voltage characteristic and reliability studies suggesting that the bad performance of the oxide grown on the p-type SiC system as metal–oxide–semiconductor devices, is mainly linked to the low-density oxide film and can be overcome under proper growth condition.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
84.32.Tt Capacitors
73.63.Bd Nanocrystalline materials
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
81.65.Mq Oxidation

Suppression of thermal atomic interdiffusion in C-doped InGaAs∕AlGaAs quantum well laser structures using TiO2 dielectric layers

P. L. Gareso, M. Buda, L. Fu, H. H. Tan, and C. Jagadish

Appl. Phys. Lett. 85, 5583 (2004); http://dx.doi.org/10.1063/1.1833563 (3 pages) | Cited 9 times

Online Publication Date: 8 December 2004

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The effects of thermal annealing on C-doped InGaAs∕AlGaAs quantum well laser structures capped with titanium dioxide (TiO2) layers were investigated. The atomic interdiffusion was greatly suppressed by the presence of a TiO2 capping layer during annealing, inhibiting even the thermal intermixing observed in the uncapped sample. An increase in the amount of lattice contraction associated with the presence of substitutional carbon CAs after annealing without a capping layer was observed, but not after annealing with a TiO2 capping layer. Capacitance–voltage measurements confirmed the electrical activation of carbon after annealing without a dielectric layer and show a negligible change after annealing using a TiO2 capping layer. The possible mechanisms involving both the atomic intermixing on the group III sublattice and carbon activation on the group V sublattice and the implications for optoelectronic device integration using impurity-free intermixing are discussed.
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81.05.Ea III-V semiconductors
81.07.St Quantum wells
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.35.Fx Diffusion; interface formation
73.63.Hs Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
81.40.Gh Other heat and thermomechanical treatments
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
42.55.Px Semiconductor lasers; laser diodes
61.72.S- Impurities in crystals
77.55.-g Dielectric thin films

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer

T. Onuma, S. F. Chichibu, A. Uedono, Y.-Z. Yoo, T. Chikyow, T. Sota, M. Kawasaki, and H. Koinuma

Appl. Phys. Lett. 85, 5586 (2004); http://dx.doi.org/10.1063/1.1832734 (3 pages) | Cited 18 times

Online Publication Date: 8 December 2004

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Nonradiative photoluminescence (PL) lifetime (τnr) and point defect density in the (0001) ZnO epilayer grown on (111) Si substrates by laser-assisted molecular-beam epitaxy (L-MBE) using a (0001) ZnS epitaxial buffer layer were compared with those in the ZnO films on (111) and (001) Si substrates prepared by direct transformation of ZnS epilayers on Si by thermal oxidation [Yoo et al., Appl. Phys. Lett. 78, 616 (2001)]. Both the ZnO films exhibited excitonic reflectance anomalies and corresponding PL peaks at low temperature, and the density or size of vacancy-type point defects (Zn vacancies), which were measured by the monoenergetic positron annihilation measurement, in the L-MBE epilayer was lower than that in the films prepared by the oxidation transformation. The ZnO epilayer grown on a (0001) ZnS epitaxial buffer on (111) Si exhibited longer τnr of 105 ps at room temperature.
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81.05.Dz II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
78.55.Et II-VI semiconductors
68.55.A- Nucleation and growth
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Effect of Bi surfactant on atomic ordering of GaAsSb

W. Y. Jiang, J. Q. Liu, M. G. So, T. S. Rao, M. Thewalt, K. L. Kavanagh, and S. P. Watkins

Appl. Phys. Lett. 85, 5589 (2004); http://dx.doi.org/10.1063/1.1830687 (3 pages) | Cited 2 times

Online Publication Date: 8 December 2004

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The addition of small quantities of a Bi surfactant is shown to have dramatic effects on the microstructure of GaAsSb alloys grown by organometallic vapor phase epitaxy (OMVPE). Epilayers grown without Bi show weak atomic ordering in plan-view selective area electron diffraction measurements, with periodicity of three or six times the [110] lattice spacing as previously reported. The addition of Bi at a ratio of 1% Bi∕Ga to the gas flow results in the appearance of strong CuAu and chalcopyrite ordering, as determined from electron diffraction measurements in both undoped, and heavily carbon doped layers. High-resolution, transmission electron microscopy lattice images clearly show the coexistence of {100}, {210} ordered and disordered structures with domain sizes of ∼10–20 nm. Photoluminescence shows no band gap changes in GaAsSb samples with and without {100} and {210} ordering.
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68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
68.37.Lp Transmission electron microscopy (TEM)

Tunable optical switch using magnetic fluids

H. E. Horng, C. S. Chen, K. L. Fang, S. Y. Yang, J. J. Chieh, Chin-Yih Hong, and H. C. Yang

Appl. Phys. Lett. 85, 5592 (2004); http://dx.doi.org/10.1063/1.1833564 (3 pages) | Cited 37 times

Online Publication Date: 8 December 2004

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With a tunable refractive index, magnetic fluid can be applied to the development of adjustable optical devices. In this work, a magnetic-fluid-based optical switch is designed and characterized. The optical switch is formed by sealing magnetic fluid between two glass prisms. When a light is incident to one side of one of the prisms, a reflected light from the magnetic fluid film comes out from the same prism, whereas a transmitted light through the film emits from the other prism. It was found that the intensity ratio of the reflected light to the transmitted light can be manipulated by varying the external magnetic field strength. This implies that the light intensity can be switched between two paths. The switching efficiency also depends on the incident angle of a light into the prism. We then theoretically derive the incident-angle dependent switching efficiency to clarify relevant physical mechanisms.
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42.79.Bh Lenses, prisms and mirrors
42.65.Pc Optical bistability, multistability, and switching, including local field effects
75.50.Mm Magnetic liquids
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.15.+e Liquid thin films

Strong light scattering in macroporous TiO2 monoliths induced by phase separation

Koji Fujita, Junko Konishi, Kazuki Nakanishi, and Kazuyuki Hirao

Appl. Phys. Lett. 85, 5595 (2004); http://dx.doi.org/10.1063/1.1823596 (3 pages) | Cited 10 times

Online Publication Date: 8 December 2004

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Macroporous titania (TiO2) monoliths have been prepared from systems containing titania colloid and poly(ethylene oxide) using a sol-gel method, and the light-scattering properties have been investigated by means of coherent backscattering. Three-dimensionally interconnected macroporous morphology is obtained by inducing the phase separation parallel to the sol-gel transition. The crystal structure of TiO2 gel is transformed from anatase to rutile through the heat treatment above 900 °C, while the macroporous morphology remains unchanged. We show that the rutile-type TiO2-based macropurous monoliths are strongly scattering media for visible light.
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81.05.Rm Porous materials; granular materials
64.75.-g Phase equilibria
78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.35.B- Structure of clean surfaces (and surface reconstruction)
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Gh Other heat and thermomechanical treatments
61.50.Ks Crystallographic aspects of phase transformations; pressure effects
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