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13 Dec 2004

Volume 85, Issue 24, pp. 5819-6053

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 5968 (2004); http://dx.doi.org/10.1063/1.1830083 (3 pages)

A. Urbieta, P. Fernández, and J. Piqueras
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Characteristics of metal-insulator-semiconductor capacitors based on high-k HfAlO dielectric films obtained by low-temperature electron-beam gun evaporation

V. Mikhelashvili, R. Brener, O. Kreinin, B. Meyler, J. Shneider, and G. Eisenstein

Appl. Phys. Lett. 85, 5950 (2004); http://dx.doi.org/10.1063/1.1836875 (3 pages) | Cited 14 times

Online Publication Date: 9 December 2004

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We describe the characteristics of thin HfAlO films deposited at low temperature by electron beam gun evaporation. As-deposited films thinner than 6 nm exhibit an effective dielectric constant (keff) of 9–11.5. The minimum quantum mechanical corrected effective oxide thickness is ∼1.45 nm and the leakage currents are very low. Rapid thermal annealing in a N2 environment improves the leakage further and up to 750 °C does not affect keff. Higher annealing temperatures reduce keff, but even at 950 °C, it has a value of 6.5. These HfAlO films have the potential to serve as a substitute for SiO2 in small-scale metal-insulator-semiconductor structures.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
84.32.Tt Capacitors
77.22.Ch Permittivity (dielectric function)
77.80.Dj Domain structure; hysteresis
61.72.Cc Kinetics of defect formation and annealing
73.61.Ng Insulators
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Jv Interfaces; heterostructures; nanostructures

Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor

Moonju Cho, Doo Seok Jeong, Jaehoo Park, Hong Bae Park, Suk Woo Lee, Tae Joo Park, Cheol Seong Hwang, Gi Hoon Jang, and Jaehack Jeong

Appl. Phys. Lett. 85, 5953 (2004); http://dx.doi.org/10.1063/1.1829773 (3 pages) | Cited 42 times

Online Publication Date: 9 December 2004

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The dielectric properties of HfO2 thin films, which were deposited on Si wafers by an atomic layer deposition (ALD) technique at a wafer temperature of 300 °C using a N-containing, tetrakis dimethylamido hafnium precursor (Hf[N(CH3)2]4), were highly improved by adopting O3 as the oxidant during the ALD instead of H2O. The films contained a much smaller carbon impurity concentration and were of more amorphous nature compared to the films grown using H2O as oxidant. Temperature-dependent leakage current analysis showed that the films grown using O3 as oxidant had a higher interfacial potential barrier for tunneling and the leakage current densities of the as-deposited film were three orders of magnitude smaller than that of the films grown using H2O. The dielectric constant of the HfO2 film was 24.4 and the leakage current density was 1.6×10−7 A∕cm2 when the capacitance equivalent thickness was 1.49 nm.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.22.Ch Permittivity (dielectric function)
81.65.Mq Oxidation
61.72.S- Impurities in crystals
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Directional growth by low electric-field-controlled crystallization of bulk amorphous lithium tetraborate

S. J. Kim, J. E. Kim, and Y. S. Yang

Appl. Phys. Lett. 85, 5956 (2004); http://dx.doi.org/10.1063/1.1825071 (3 pages) | Cited 2 times

Online Publication Date: 9 December 2004

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Highly oriented rod-shaped crystals were grown during crystallization of bulk amorphous Li2B4O7 under a low ac electric field of ∼5 V∕mm. The crystal c axis that is the long direction of rods and perpendicular to the flat surface of the sample is parallel to the applied electric-field direction. The oriented crystals, with an alignment within a declined angle of ∼15°, are so long along the c direction compared with those of other directions that the geometrical structure of each rod is quasi-one-dimensional. The measured electromechanical coupling coefficient of kt=0.47 is comparable to that of single-crystal Li2B4O7.
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81.05.Pj Glass-based composites, vitroceramics
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
64.70.K- Solid-solid transitions
77.65.Bn Piezoelectric and electrostrictive constants
61.43.Fs Glasses
81.40.Gh Other heat and thermomechanical treatments

Chemical reaction and metallic cluster formation by annealing-temperature control in ZrO2 gate dielectrics on Si

J. Okabayashi, S. Toyoda, H. Kumigashira, M. Oshima, K. Usuda, M. Niwa, and G. L. Liu

Appl. Phys. Lett. 85, 5959 (2004); http://dx.doi.org/10.1063/1.1835001 (3 pages) | Cited 22 times

Online Publication Date: 9 December 2004

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Thermal stability of the ZrO2∕Zr–silicate∕Si structure and the Zr–silicide formation were investigated by photoemission spectroscopy depending on the annealing temperature in ultrahigh vacuum. By the annealing below 860 °C, the interfacial layer thickness of the Zr–silicate decreased although the ZrO2 top layer was not affected. The annealing at 860 °C caused the interfacial Zr–silicate layer to disappear. By the annealing above 860 °C, the metallic Zr components appeared and the metallic clusters were formed. High-resolution photoemission spectra have revealed that the clusters consist of a ZrSi2 layer. Valence-band spectra depending on the annealing temperature provide us with the information about the crystallization in the ZrO2 layer.
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82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.30.Nr Association, addition, insertion, cluster formation
81.40.Gh Other heat and thermomechanical treatments
64.70.K- Solid-solid transitions
73.20.At Surface states, band structure, electron density of states

Fatigue-free behavior of Bi3.25La0.75Ti3O12 thin films grown on several bottom eletrodes by the polymeric precursor method

A. Z. Simões, A. Ries, F. M. Filho, C. S. Riccardi, J. A. Varela, and E. Longo

Appl. Phys. Lett. 85, 5962 (2004); http://dx.doi.org/10.1063/1.1834999 (3 pages) | Cited 23 times

Online Publication Date: 9 December 2004

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Fatigue-free Bi3.25La0.75Ti3O12 (BLT) thin films were grown on LaNiO3,RuO2, and La0.5Sr0.5CoO3 bottom electrodes in a microwave furnace at 700 °C for 10 min. The remanent polarization (Pr) and the drive voltage (Vc) were in the range of 11–23 μC∕cm2 and 0.86–1.56 V, respectively, and are better than the values found in the literature. The BLT capacitors did not show any significant fatigue up to 1010 read∕write switching cycles.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
73.61.Ng Insulators
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization

Voltage-induced degradation in self-aligned polycrystalline silicon gate n-type field-effect transistors with HfO2 gate dielectrics

Jaehoo Park, Moonju Cho, Hong Bae Park, Tae Joo Park, Suk Woo Lee, Sug Hun Hong, Doo Seok Jeong, Chihoon Lee, and Cheol Seong Hwang

Appl. Phys. Lett. 85, 5965 (2004); http://dx.doi.org/10.1063/1.1834992 (3 pages) | Cited 8 times

Online Publication Date: 9 December 2004

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The voltage-induced degradation in the threshold voltage of field-effect transistors using atomic layer deposited HfO2-gate dielectrics was studied. Si channel surfaces of some samples were in situ pretreated using O3 flow before HfO2 deposition, which formed a very thin SiO2 interfacial layer. This avoided a shift of the threshold voltage up to a stress time of 1000 s under inversion condition at +3 V gate voltage. The transistors without O3 pretreatment showed a serious change in the threshold voltage by electron trapping. A leakage current measurement under inversion condition showed that the leakage current was not the major factor that controlled the degradation. Instead, the interfacial traps resulting from the Si suboxide formation for the cases without O3 pretreatment appeared to constitute the major reason for the degradation.
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85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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