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20 Dec 2004

Volume 85, Issue 25, pp. 6083-6293

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 6281 (2004); http://dx.doi.org/10.1063/1.1834720 (3 pages)

M. P. Rao, M. F. Aimi, and N. C. MacDonald
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Orientation dependence of transverse piezoelectric properties of 0.70Pb(Mg1∕3Nb2∕3)O3-0.30PbTiO3 single crystals

Jue Peng, Hao-su Luo, Di Lin, Hai-qing Xu, Tian-hou He, and Wei-qing Jin

Appl. Phys. Lett. 85, 6221 (2004); http://dx.doi.org/10.1063/1.1839288 (3 pages) | Cited 45 times

Online Publication Date: 15 December 2004

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In this letter, we present our investigation of transverse piezoelectric performance in 0.70Pb(Mg1∕3Nb2∕3)O3-0.30PbTiO3 (0.70PMN-0.30PT) single crystals with different cuts using a resonance technique. We give the report on the finding of ultrahigh k31 and d31 values of 95.4% and −2517 pC∕N, respectively. However, this unusual transverse piezoelectric property is only obtained in crystals with the polarization (thickness) and vibration (length) directions along the 〈110〉 and 〈001〉 directions, respectively. The 0.70PMN-0.30PT crystal with this cut shows significantly great potential for applications in high-performance transverse-mode piezoelectric devices, such as medical array ultrasonic transducers and actuators.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ej Polarization and depolarization
81.40.Jj Elasticity and anelasticity, stress-strain relations
77.80.Dj Domain structure; hysteresis
62.20.D- Elasticity
77.65.Ly Strain-induced piezoelectric fields

Dielectric response of the charge-ordered two-dimensional nickelate La1.5Sr0.5NiO4

J. Rivas, B. Rivas-Murias, A. Fondado, J. Mira, and M. A. Señarís-Rodríguez

Appl. Phys. Lett. 85, 6224 (2004); http://dx.doi.org/10.1063/1.1834998 (3 pages) | Cited 28 times

Online Publication Date: 15 December 2004

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We report the dielectric response of La1.5Sr0.5NiO4, a system that experiences charge ordering above room temperature (TCO=480 K) and a rearrangement of its charge-order pattern in the temperature region 160–200 K. A careful analysis of the role of the electrical contacts used, sample thickness, and grain size on the experimental data allows us to determine that this material exhibits a high intrinsic dielectric constant. In addition, the temperature dependence of the dielectric constant, that shows a maximum in the region of the rearrangement of the charge-order pattern, points to a link between the two phenomena.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)

Effect of the interfacial SiO2 layer thickness on the dominant carrier type in leakage currents through HfAlOx∕SiO2 gate dielectric films

Wataru Mizubayashi, Naoki Yasuda, Hirokazu Hisamatsu, Kunihiko Iwamoto, Koji Tominaga, Katsuhiko Yamamoto, Hiroyuki Ota, Tsuyoshi Horikawa, Toshihide Nabatame, and Akira Toriumi

Appl. Phys. Lett. 85, 6227 (2004); http://dx.doi.org/10.1063/1.1840120 (3 pages) | Cited 4 times

Online Publication Date: 15 December 2004

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The carrier conduction mechanism of leakage current in n+-gate p-channel metal-insulator-semiconductor field-effect-transistors with HfAlOx (Hf:60 at %,Al:40 at %)∕SiO2 dielectric layers has been investigated using the carrier separation method. Since the gate current depends on the substrate voltage and both electron and hole currents are independent of temperature in the range of 25–150 °C, the conduction mechanism for both currents is a tunneling process. It is shown that the dominant carrier in the leakage current depends on the structure of the high-k stack. When the interfacial SiO2 layer (IL) thickness increases at a fixed high-k thickness (Thigh‐k), the dominant carrier in the leakage current changes from hole to electron at ∼2.0–2.3‐nm-thick IL, because of asymmetric barrier height for electron and hole in the SiO2∕Si system. In contrast, for the case of a fixed IL thickness of 1.3 nm, the hole current dominates in the leakage current, regardless of Thigh‐k, due to symmetric barrier height of the conduction and valence bands in the HfAlOx∕Si system.
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85.30.Tv Field effect devices

Interfacial oxide formation from intrinsic oxygen in W–HfO2 gated silicon field-effect transistors

E. J. Preisler, S. Guha, M. Copel, N. A. Bojarczuk, M. C. Reuter, and E. Gusev

Appl. Phys. Lett. 85, 6230 (2004); http://dx.doi.org/10.1063/1.1834995 (3 pages) | Cited 20 times

Online Publication Date: 15 December 2004

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We report the effects of ultrahigh vacuum and nitrogen annealing on self-aligned W-gated HfO2 n-field-effect transistors. While rapid thermal annealing in a nitrogen ambient significantly improved the channel mobility, there is a corresponding increase in the gate dielectric thickness of up to 20 math. Here we show that this increase is due to the formation of interfacial oxides between the HfO2 and the silicon, caused by the diffusion of oxygen from the W gates. The results point to the importance of oxygen solubility in metals, which may be significant in many candidate gate electrodes.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Cc Kinetics of defect formation and annealing
72.20.Fr Low-field transport and mobility; piezoresistance
68.35.Fx Diffusion; interface formation
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