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20 Dec 2004

Volume 85, Issue 25, pp. 6083-6293

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Appl. Phys. Lett. 85, 6281 (2004); http://dx.doi.org/10.1063/1.1834720 (3 pages)

M. P. Rao, M. F. Aimi, and N. C. MacDonald
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Single-mask, three-dimensional microfabrication of high-aspect-ratio structures in bulk silicon using reactive ion etching lag and sacrificial oxidation

M. P. Rao, M. F. Aimi, and N. C. MacDonald

Appl. Phys. Lett. 85, 6281 (2004); http://dx.doi.org/10.1063/1.1834720 (3 pages) | Cited 19 times

Online Publication Date: 15 December 2004

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This letter describes a simple method for three-dimensional microfabrication of complex, high-aspect-ratio structures with arbitrary surface height profiles in bulk silicon. The method relies on the exploitation of reactive ion etching lag to simultaneously define all features using a single lithographic masking step. Modulation of the mask pattern openings used to define the features results in etch depth variation across the pattern, which is then translated into surface height variation through removal of the superstructure above the etched floors. Utilization of a nonisotropic superstructure removal method based on sacrificial oxidation enables definition of high-aspect-ratio structures with vertical sidewalls and fine features. The utility of the approach is demonstrated in the fabrication of a sloping electrode structure for application in a hybrid micromirror device.
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81.05.Cy Elemental semiconductors
81.20.Wk Machining, milling
85.40.Hp Lithography, masks and pattern transfer
85.40.Ls Metallization, contacts, interconnects; device isolation
81.65.Cf Surface cleaning, etching, patterning
81.65.Mq Oxidation

Experimental and numerical investigation of terahertz transmission through strongly scattering sub-wavelength size spheres

S. Mujumdar, K. J. Chau, and A. Y. Elezzabi

Appl. Phys. Lett. 85, 6284 (2004); http://dx.doi.org/10.1063/1.1839272 (3 pages) | Cited 7 times

Online Publication Date: 15 December 2004

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We report on experimental and numerical studies of terahertz propagation in strongly scattering random media. The experimental variations of the terahertz pulse group delay and scattering-induced effects such as temporal pulse distortion, spectral decay, and power attenuation as a function of sample thickness are in excellent agreement with those predicted from a Monte Carlo photon migration model. The transmitted pulses are analyzed with a classical effective medium approximation. Due to the subwavelength size of the random scatterers, it is found that the effective medium approximation underestimates the accumulated pulse phase acquired by the high frequencies during pulse propagation.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation

Dynamic force microscopy at high cantilever resonance frequencies using heterodyne optical beam deflection method

Takeshi Fukuma, Kenjiro Kimura, Kei Kobayashi, Kazumi Matsushige, and Hirofumi Yamada

Appl. Phys. Lett. 85, 6287 (2004); http://dx.doi.org/10.1063/1.1842368 (3 pages) | Cited 7 times

Online Publication Date: 15 December 2004

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We have developed a dynamic force microscope (DFM) with a wideband cantilever deflection sensor using heterodyne optical beam deflection (HOBD) method. The bandwidth of HOBD method is limited only by the maximum frequency for laser power modulation, which can be as high as gigahertz order. This technique allows us to use high cantilever resonance frequencies for improving the sensitivity and time response of DFM. In this letter, basic principle and experimental setup of HOBD method are described. Deflection measurement of a cantilever vibration at about 7 MHz is demonstrated. Using this cantilever, DFM imaging with a relatively fast scanning speed is performed.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
68.37.Ps Atomic force microscopy (AFM)

X-ray laser-induced photoelectron spectroscopy for single-state measurements

A. J. Nelson, J. Dunn, T. van Buuren, and J. Hunter

Appl. Phys. Lett. 85, 6290 (2004); http://dx.doi.org/10.1063/1.1841473 (3 pages) | Cited 3 times

Online Publication Date: 15 December 2004

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We demonstrate single-shot x-ray laser-induced time-of-flight photoelectron spectroscopy on metal and semiconductor surfaces with picosecond time resolution. Our compact multipulse terawatt tabletop x-ray laser source provides the necessary high photon flux (>1012∕pulse), monochromaticity, picosecond pulse duration, and coherence for probing ultrafast changes in the chemical and electronic structure of these materials. Static valence band and shallow core-level photoemission spectra are presented for ambient temperature polycrystalline Cu foils and Ge(100). Surface contamination was removed by UV ozone cleaning prior to analysis. The ultrafast nature of this technique lends itself to true single-state measurements of shocked and heated materials.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
71.20.Gj Other metals and alloys
71.20.Nr Semiconductor compounds
81.65.Cf Surface cleaning, etching, patterning
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