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27 Dec 2004

Volume 85, Issue 26, pp. 6323-6432

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Appl. Phys. Lett. 85, 6409 (2004); http://dx.doi.org/10.1063/1.1839274 (3 pages)

Peter D. D. Schwindt, Svenja Knappe, Vishal Shah, Leo Hollberg, John Kitching, Li-Anne Liew, and John Moreland
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Chip-scale atomic magnetometer

Peter D. D. Schwindt, Svenja Knappe, Vishal Shah, Leo Hollberg, John Kitching, Li-Anne Liew, and John Moreland

Appl. Phys. Lett. 85, 6409 (2004); http://dx.doi.org/10.1063/1.1839274 (3 pages) | Cited 94 times

Online Publication Date: 17 December 2004

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Using the techniques of microelectromechanical systems, we have constructed a small low-power magnetic sensor based on alkali atoms. We use a coherent population trapping resonance to probe the interaction of the atoms’ magnetic moment with a magnetic field, and we detect changes in the magnetic flux density with a sensitivity of 50 pT Hz−1∕2 at 10 Hz. The magnetic sensor has a size of 12 mm3 and dissipates 195 mW of power. Further improvements in size, power dissipation, and magnetic field sensitivity are immediately foreseeable, and such a device could provide a hand-held battery-operated magnetometer with an atom shot-noise limited sensitivity of 0.05 pT Hz−1∕2.
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07.55.Jg Magnetometers for susceptibility, magnetic moment, and magnetization measurements
07.55.Ge Magnetometers for magnetic field measurements
85.75.Ss Magnetic field sensors using spin polarized transport
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Effects of intrinsic layer thickness on solar cell parameters of organic p‐i‐n heterojunction photovoltaic cells

Tetsuya Taima, Masayuki Chikamatsu, Yuji Yoshida, Kazuhiro Saito, and Kiyoshi Yase

Appl. Phys. Lett. 85, 6412 (2004); http://dx.doi.org/10.1063/1.1841479 (3 pages) | Cited 28 times

Online Publication Date: 17 December 2004

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We fabricated organic p‐i‐n heterojunction photovoltaic cells of a zinc phthalocyanine (ZnPc)∕1:1 codeposition (ZnPc:C60)∕C60 structure. We investigated the effects of the intrinsic (i-) layer thickness on the photovoltaic properties. The thickness was changed from 0 nm (=p‐n heterojunction) to 50 nm (=all i-layer) with the total thickness of 50 nm. While the short-circuit photocurrent increased with increasing the thickness, the fill factor showed the opposite tendency. Therefore, the power conversion efficiency showed a maximum (1.5%) at the thickness of 10 nm under air mass 1.5 global solar conditions. Device simulation based on idealized equivalent circuit of a solar cell demonstrates that the i-layer thickness is concerned in the series resistance of the cells.
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84.60.Jt Photoelectric conversion
85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects

High-pressure deuterium annealing for improving the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices

Sangmoo Choi, Man Jang, Hokyung Park, Hyunsang Hwang, Sanghun Jeon, Juhyung Kim, and Chungwoo Kim

Appl. Phys. Lett. 85, 6415 (2004); http://dx.doi.org/10.1063/1.1842363 (3 pages) | Cited 2 times

Online Publication Date: 17 December 2004

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We report the effects of high-pressure deuterium postmetallization annealing on the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices. Compared with the control samples annealed in a conventional forming gas ambient (H2∕N2=4% ∕ 96%), the samples annealed in a high-pressure (10 atm) pure deuterium ambient show improved endurance and retention characteristics without the degradation of program/erase (P/E) speed. In addition, the high-pressure deuterium-annealed samples show a significantly reduced charge loss rate for the electron-stored state and the hole-stored state, before and after the P/E cycles. The improved reliability of the high-pressure deuterium-annealed samples can be explained by the significantly decreased interface trap density and the large kinetic isotope effect of deuterium, which reduces the generation of the interface trap density under the stress of the P/E cycles.
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84.30.Sk Pulse and digital circuits
85.30.Tv Field effect devices
73.40.Ty Semiconductor-insulator-semiconductor structures
61.72.Cc Kinetics of defect formation and annealing
85.40.Ls Metallization, contacts, interconnects; device isolation
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