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27 Dec 2004

Volume 85, Issue 26, pp. 6323-6432

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 6409 (2004); http://dx.doi.org/10.1063/1.1839274 (3 pages)

Peter D. D. Schwindt, Svenja Knappe, Vishal Shah, Leo Hollberg, John Kitching, Li-Anne Liew, and John Moreland
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Weak localization thickness measurements of Si:P delta-layers

D. F. Sullivan, B. E. Kane, and P. E. Thompson

Appl. Phys. Lett. 85, 6362 (2004); http://dx.doi.org/10.1063/1.1842366 (3 pages) | Cited 5 times

Online Publication Date: 17 December 2004

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We report on our results for the characterization of Si:P delta-layers grown by low temperature molecular beam epitaxy. Our data show that the effective thickness of a delta-layer can be obtained through a weak localization analysis of electrical transport measurements performed in perpendicular and parallel magnetic fields. An estimate of the diffusivity of phosphorus in silicon is obtained by applying this method to several samples annealed at 850 °C for intervals of 0–15 min. With further refinements, this may prove to be the most precise method of measuring delta-layer widths developed to date, including that of secondary ion mass spectrometry analysis.
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81.05.Cy Elemental semiconductors
73.20.Fz Weak or Anderson localization
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.72.Cc Kinetics of defect formation and annealing
61.72.S- Impurities in crystals
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Lightly phosphorus-doped homoepitaxial diamond films grown by chemical vapor deposition

Masayuki Katagiri, Junichi Isoya, Satoshi Koizumi, and Hisao Kanda

Appl. Phys. Lett. 85, 6365 (2004); http://dx.doi.org/10.1063/1.1840119 (3 pages) | Cited 48 times

Online Publication Date: 17 December 2004

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Lightly phosphorus-doped {111} homoepitaxial diamond films have been grown by microwave plasma-assisted chemical vapor deposition under optimized growth conditions. The Phosphorus concentration in the film can be controlled at a low doping level of the order of 1016 cm−3. N-type conductivity of the films with phosphorus concentrations above 1×1016 cm−3 is reproducibly confirmed by Hall-effect measurements in the temperature range from 300 to 873 K. The highest value of the Hall mobility at room temperature is 660 cm2∕V s obtained for a film with a phosphorus concentration of 7×1016 cm−3.
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73.61.Cw Elemental semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule

Jong-Moo Kim, Joo-Won Lee, Jai-Kyeong Kim, Byeong-Kwon Ju, Jong-Seung Kim, Yun-Hi Lee, and Myung-Hwan Oh

Appl. Phys. Lett. 85, 6368 (2004); http://dx.doi.org/10.1063/1.1841470 (3 pages) | Cited 26 times

Online Publication Date: 17 December 2004

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Organic thin-film transistors (OTFTs) based on pentacene semiconductor are elaborated on the plastic substrates through a four-level mask process without photolithographic patterning to yield a simple fabrication process. Octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayers is deposited on the surface of zirconium oxide dielectric layer. The effect of OTMS interlayer with gate dielectric surface modification on the field effect mobility of OTFTs has been examined and these prototype organic transistors showed excellent electrical characteristics with field effect mobility >0.66 cm2∕V s and Ion∕Ioff>10.5
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81.16.Dn Self-assembly
72.80.Le Polymers; organic compounds (including organic semiconductors)
81.65.-b Surface treatments
85.30.Tv Field effect devices

Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy

Costel Constantin, Muhammad B. Haider, David Ingram, and Arthur R. Smith

Appl. Phys. Lett. 85, 6371 (2004); http://dx.doi.org/10.1063/1.1836878 (3 pages) | Cited 19 times

Online Publication Date: 17 December 2004

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Structural and electronic properties of stoichiometric single-phase CrN(001) thin films grown on MgO(001) substrates by radio-frequency N plasma-assisted molecular-beam epitaxy, are investigated. In situ room-temperature scanning tunneling microscopy clearly shows the 1×1 atomic periodicity of the crystal structure as well as long-range topographic distortions which are characteristic of a semiconductor surface. This semiconductor behavior is consistent with ex situ resistivity measurements over the range 285 K and higher, whereas below 260 K, metallic behavior is observed. The resistivity-derived band gap for the high-temperature region, 71 meV, is consistent with the tunneling spectroscopy results. The observed electronic (semiconductor/metal) transition temperature coincides with the temperature of the known coincident magnetic (para-antiferro) and structural (cubic-orthorhombic) phase transitions.
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71.30.+h Metal-insulator transitions and other electronic transitions
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Highly transparent Ag∕SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes

June-O Song and Tae-Yeon Seong

Appl. Phys. Lett. 85, 6374 (2004); http://dx.doi.org/10.1063/1.1834990 (3 pages) | Cited 20 times

Online Publication Date: 17 December 2004

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We report on the formation of highly transparent and low-resistance Ag(3 nm)∕Sb-doped SnO2 (ATO) (200 nm) ohmic contacts to p-GaN (5×1017 cm−3). It is shown that the samples become ohmic with a specific contact resistance of 8.7×10−5 Ω cm2 upon annealing at 530 °C for 1 min in air. The oxidized contacts produce an extremely high light transmittance of 99% at a wavelength of 400 nm. The light-emitting diodes (LEDs) fabricated with the annealed Ag/ATO p-type contact layers give a forward-bias voltage of 3.42 V at injection current of 20 mA, which is better than that of LEDs with the most common oxidized Ni(5 nm)∕Au(5 nm) contact layers. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the ohmic formation mechanisms are discussed.
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85.60.Jb Light-emitting devices
61.72.Cc Kinetics of defect formation and annealing
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Ns Metal-nonmetal contacts
73.40.Cg Contact resistance, contact potential
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
79.60.Jv Interfaces; heterostructures; nanostructures
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
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