APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

12 Jul 2004

Volume 85, Issue 2, pp. 161-347

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 341 (2004); http://dx.doi.org/10.1063/1.1772854 (3 pages)

Xiangdong Zhang and Zhengyou Liu
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Percolation and gas sensitivity in nanocrystalline metal oxide films

Markus Ulrich, Armin Bunde, and Claus-Dieter Kohl

Appl. Phys. Lett. 85, 242 (2004); http://dx.doi.org/10.1063/1.1769071 (3 pages) | Cited 5 times

Online Publication Date: 8 July 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We use Monte Carlo simulations to study the influence of gas adsorption on the conductance of nanocrystalline metal oxide films. The films are modeled by a network of intergranular contacts with conductances that depend on the amount of adsorbed gas molecules, and take into account a broad distribution of grain sizes and the possibility that ultrasmall nanograins can be insulating. Using percolation theory, we show that below a critical gas concentration (detection limit), the film can be insulating due to the absence of a percolating cluster of conducting grains. Above this detection limit, the conductance of the film increases rapidly. The detection limit can be tuned by the grain size and the mean coordination number in the film.
Show PACS
68.43.Mn Adsorption kinetics
61.46.-w Structure of nanoscale materials
72.20.Fr Low-field transport and mobility; piezoresistance
72.80.Sk Insulators
72.10.-d Theory of electronic transport; scattering mechanisms

Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors

R. Meaudre and M. Meaudre

Appl. Phys. Lett. 85, 245 (2004); http://dx.doi.org/10.1063/1.1769584 (3 pages) | Cited 4 times

Online Publication Date: 8 July 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The current transport equations describing space-charge-limited conduction in the dark and under illumination in amorphous materials have been studied. With a certain number of reasonable approximations, a very simple relation in the form Y=sv X is obtained where Y and X are two quantities directly linked to the values of dark currents and photocurrents measured at two different voltages and sv is the product of capture cross section of states near the Fermi level and thermal velocity of carriers. The model is then applied to n+-i-n+ hydrogenated amorphous and polymorphous structures.
Show PACS
72.20.Ht High-field and nonlinear effects
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Cw Elemental semiconductors
72.80.Ng Disordered solids
72.20.Dp General theory, scattering mechanisms

Quasisuperlattice storage: A concept of multilevel charge storage

T. C. Chang, S. T. Yan, P. T. Liu, C. W. Chen, H. H. Wu, and S. M. Sze

Appl. Phys. Lett. 85, 248 (2004); http://dx.doi.org/10.1063/1.1772873 (3 pages) | Cited 9 times

Online Publication Date: 8 July 2004

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A concept of the quasisuperlattice storage has been demonstrated in this study. Under suitably operated voltage, two apparent states of charge storage can be distinguished. The memory effects are due to the multilevel storage in the quasisuperlattice. Also, the a-Si quantum wells provide a feasible design for the 2 bit per cell nonvolatile memory devices. The operation of the 2 bit per cell needs to be performed by Fowler–Nordheim tunneling instead of conventional channel hot electron injection. Additionally, the dual read operation of the source and drain sides for conventional SONOS 2 bit∕cell device is not necessary, which simplifies the circuit design engineering.
Show PACS
73.21.Fg Quantum wells
72.20.Ht High-field and nonlinear effects
73.21.Cd Superlattices
84.30.Sk Pulse and digital circuits
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close