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2 Aug 2004

Volume 85, Issue 5, pp. 701-848

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 807 (2004); http://dx.doi.org/10.1063/1.1777817 (3 pages)

Henry J. Liu and Kyeongjae Cho
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Micropatterning of metal films coated on polymer surfaces with epoxy mold and its application to organic field effect transistor fabrication

Zhe Wang, Rubo Xing, Jian Zhang, Jianfeng Yuan, Xinhong Yu, and Yanchun Han

Appl. Phys. Lett. 85, 831 (2004); http://dx.doi.org/10.1063/1.1776325 (3 pages) | Cited 11 times

Online Publication Date: 27 July 2004

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In this letter, a simple and versatile approach to micropatterning a metal film, which is evaporated on a Si substrate coated with polymer, is demonstrated by the use of a prepatterned epoxy mold. The polymer interlayer between the metal and the Si substrate is found important for the high quality pattern. When the metal–polymer–Si sandwich structure is heated with the temperature below Tm but above Tg of the polymer, the plastic deformation of the polymer film occurs under sufficiently high pressure applied. It causes the metal to crack locally or weaken along the pattern edges. Further heating while applying a lower pressure results in the formation of an intimate junction between the epoxy stamp and the metal film. Under these conditions the epoxy cures further, ensuring adhesion between the stamp and the film. The lift-off process works because the adhesion between the epoxy and the metal film is stronger than that between the metal film and the polymer. A polymer field effect transistor is fabricated in order to demonstrate potential applications of this micropatterning approach.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.35.Gh Polymers on surfaces; adhesion
68.55.A- Nucleation and growth
85.30.Tv Field effect devices
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
68.35.Np Adhesion
81.40.Gh Other heat and thermomechanical treatments

Reduction of the number of electrons emitted backwards in back-gated devices for field emission: A theoretical study

V. P. Mammana and L. R. C. Fonseca

Appl. Phys. Lett. 85, 834 (2004); http://dx.doi.org/10.1063/1.1776612 (3 pages) | Cited 3 times

Online Publication Date: 27 July 2004

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The use of back-gated geometry (BGG) for field emission devices promises improved robustness, lower power consumption, and simpler manufacturing process. The BGG is a configuration in which the cathode is positioned between anode and gate, different from conventional approaches. Using a cylinder∕plane model to represent rows of cathode lines and the back-gate it is demonstrated that this geometry combined with an appropriate effective work-function modulation along the cathode surface can reduce the amount of electrons emitted backwards.
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79.20.Kz Other electron-impact emission phenomena
68.49.Jk Electron scattering from surfaces
79.70.+q Field emission, ionization, evaporation, and desorption
73.30.+y Surface double layers, Schottky barriers, and work functions

Efficient bottom cathodes for organic light-emitting devices

Jie Liu, Anil R. Duggal, Joseph J. Shiang, and Christian M. Heller

Appl. Phys. Lett. 85, 837 (2004); http://dx.doi.org/10.1063/1.1776620 (3 pages) | Cited 12 times

Online Publication Date: 27 July 2004

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Bilayers of aluminum and an alkali fluoride are well-known top cathode contacts for organic light-emitting devices but have never been successfully applied as bottom contacts. We describe a bilayer bottom cathode contact for organic electronic devices based on reversing the well-known top cathode structure such that the aluminum, rather than the alkali fluoride, contacts the organic material. Electron-only devices were fabricated showing enhanced electron injection from this bottom contact. Kelvin probe, x-ray photoelectron spectroscopy experiments, and thermodynamic calculations suggest that the enhancement results from n doping of the organic material by dissociated alkali metals.
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85.60.Jb Light-emitting devices
65.40.G- Other thermodynamical quantities
79.60.-i Photoemission and photoelectron spectra
73.50.Dn Low-field transport and mobility; piezoresistance
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Improved characteristics of organic light-emitting devices by surface modification of nickel-doped indium tin oxide anode

Ching-Ming Hsu and Wen-Tuan Wu

Appl. Phys. Lett. 85, 840 (2004); http://dx.doi.org/10.1063/1.1777416 (3 pages) | Cited 18 times

Online Publication Date: 27 July 2004

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This letter presents the optoelectrical performance of an organic light-emitting diode (OLED) through the elevation of indium tin oxide (ITO) anode work function by Ni co-sputter surface doping and additional O2 plasma treatment. The turn-on voltage of OLED devices can be reduced by 2.3 V for Ni atomic concentration greater than 1.8% and by 2.7 V for the additional O2 plasma treatment. Devices with Ni(2.6%)-doped and O2 plasma treated ITO anodes perform the highest luminance efficiency (0.91 lm∕W), three times larger than undoped ITO (0.31 lm∕W) at 250 cd∕m2.
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85.60.Jb Light-emitting devices
81.15.Cd Deposition by sputtering
52.77.Bn Etching and cleaning
73.30.+y Surface double layers, Schottky barriers, and work functions

35 GHz mode-locking of 1.3 μm quantum dot lasers

M. Kuntz, G. Fiol, M. Lämmlin, D. Bimberg, M. G. Thompson, K. T. Tan, C. Marinelli, R. V. Penty, I. H. White, V. M. Ustinov, A. E. Zhukov, Yu. M. Shernyakov, and A. R. Kovsh

Appl. Phys. Lett. 85, 843 (2004); http://dx.doi.org/10.1063/1.1776340 (3 pages) | Cited 47 times

Online Publication Date: 27 July 2004

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35 GHz passive mode-locking of 1.3 μm (InGa)As∕GaAs quantum dot lasers is reported. Hybrid mode-locking was achieved at frequencies up to 20 GHz. The minimum pulse width of the Fourier-limited pulses was 7 ps with a peak power of 6 mW. Low uncorrelated timing jitter below 1 ps was found in cross correlation experiments. High-frequency operation of the lasers was eased by a ridge waveguide design that includes etching through the active layer.
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42.60.Fc Modulation, tuning, and mode locking
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
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