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2 Aug 2004

Volume 85, Issue 5, pp. 701-848

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 807 (2004); http://dx.doi.org/10.1063/1.1777817 (3 pages)

Henry J. Liu and Kyeongjae Cho
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Experimental demonstration of a low-loss optical H-tree distribution using silicon-on-insulator microwaveguides

L. Vivien, S. Lardenois, D. Pascal, S. Laval, E. Cassan, J. L. Cercus, A. Koster, J. M. Fédéli, and M. Heitzmann

Appl. Phys. Lett. 85, 701 (2004); http://dx.doi.org/10.1063/1.1772515 (3 pages) | Cited 16 times

Online Publication Date: 27 July 2004

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The experimental demonstration of an optical H-tree distribution from one input to sixteen outputs compatible with the size of a microelectronic chip is reported. It is based on low-loss silicon-on-insulator rib submicron waveguides. Each branch is 1 cm long and includes four ultracompact T splitters and two mirrors allowing 90° direction changes. The mean value of the global losses has been measured and is found equal to 26 dB, which corresponds to a power of 2.6 μW at each output, for a 3 mW laser diode power at the input. This demonstration is an important step for on-chip optical clock distribution in complementary metal–oxide–Semiconductor integrated circuits.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers

Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

H. Y. Liu, I. R. Sellers, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, K. M. Groom, M. Gutiérrez, M. Hopkinson, J. S. Ng, J. P. R. David, and R. Beanland

Appl. Phys. Lett. 85, 704 (2004); http://dx.doi.org/10.1063/1.1776631 (3 pages) | Cited 112 times

Online Publication Date: 27 July 2004

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The use of a high-growth-temperature GaAs spacer layer is demonstrated to significantly improve the performance of 1.3 μm multilayer self-assembled InAs∕InGaAs dot-in-a-well lasers. The high-growth-temperature spacer layer inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics. Incorporation of these spacer layers allows the fabrication of multilayer quantum-dot devices emitting above 1.3 μm, with extremely low room-temperature threshold current densities and with operation up to 105°C.
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42.55.Px Semiconductor lasers; laser diodes
68.65.Ac Multilayers
68.18.-g Langmuir-Blodgett films on liquids
78.60.Fi Electroluminescence
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
78.67.Hc Quantum dots

Integrated horns for improved side coupling into in-plane three-dimensional photonic crystal waveguides

Curtis Sell, Caleb Christensen, Jason Muehlmeier, Gary Tuttle, Zhi-Yuan Li, and Kai-Ming Ho

Appl. Phys. Lett. 85, 707 (2004); http://dx.doi.org/10.1063/1.1772860 (3 pages) | Cited 4 times

Online Publication Date: 27 July 2004

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We examine the frequency response and radiation patterns for horn antennas constructed into a three-dimensional layer-by-layer photonic crystal. These horns resemble a pyramidal cavity and can be built by omitting material during the construction or by removing material from the finished crystal. The horns can be used to couple electromagnetic waves that are incident on the surface of a photonic crystal into an in-plane waveguide within the crystal. The horns are of a design suitable for use at optical frequencies.
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84.40.Ba Antennas: theory, components and accessories
84.40.Az Waveguides, transmission lines, striplines

Lithium iodate nanocrystals in Laponite matrix for nonlinear optical applications

Jérémie Teyssier, Ronan Le Dantec, Christine Galez, Yannick Mugnier, Jacques Bouillot, and Jean-Claude Plenet

Appl. Phys. Lett. 85, 710 (2004); http://dx.doi.org/10.1063/1.1777411 (2 pages) | Cited 3 times

Online Publication Date: 27 July 2004

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A Laponite clay-based lithium iodate nanocomposite have been synthesized for nonlinear optical applications. After addition of lithium iodate aqueous solution to a colloidal suspension of Laponite JS, thin layers are elaborated from this sol using dip-coating technique. After drying and heat treatments between 150 and 220°C, LiIO3 crystallizes in the matrix with nanometer size. As a result of their strong dipolar moment, the LiIO3 crystals can be orientated under an external electric field during nucleation. Planar waveguides have been elaborated on glass substrates and studied using m-lines spectroscopy. The experimental nonlinear optical response has been compared to predictions of a model and an effective nonlinear coefficient deff=1.4 pm∕V has been measured.
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42.79.Gn Optical waveguides and couplers
42.65.-k Nonlinear optics
82.70.Kj Emulsions and suspensions
42.70.Mp Nonlinear optical crystals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.40.Gh Other heat and thermomechanical treatments

Highly efficient triggered emission of single photons by colloidal CdSe∕ZnS nanocrystals

X. Brokmann, E. Giacobino, M. Dahan, and J. P. Hermier

Appl. Phys. Lett. 85, 712 (2004); http://dx.doi.org/10.1063/1.1775280 (3 pages) | Cited 41 times

Online Publication Date: 27 July 2004

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We demonstrate the realization of a highly efficient triggered source of single photons emitted by colloidal CdSe∕ZnS nanocrystals at room temperature. Under pulsed excitation, the fluorescence of single nanocrystals excited close to saturation exhibits a perfect antibunching and the probability to detect a single emitted photon per excitation pulse reaches 3%, comparable to the best values reported for other emitters. Without any correction, the probability of simultaneously emitting two photons is 25 times lower than for a faint pulsed laser. Combined with recent reports on the reduction of fluorescence intermittency, these results indicate that CdSe∕ZnS nanocrystals are promising single-photon sources.
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68.65.Hb Quantum dots (patterned in quantum wells)
78.67.Hc Quantum dots
78.55.Et II-VI semiconductors
82.70.Dd Colloids

Improving the performance of a neodymium aluminium borate microchip laser crystal by resonant pumping

Z. D. Luo, Y. D. Huang, M. Montes, and D. Jaque

Appl. Phys. Lett. 85, 715 (2004); http://dx.doi.org/10.1063/1.1775281 (3 pages) | Cited 12 times

Online Publication Date: 27 July 2004

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Laser action at 1.06 μm from a neodymium aluminium borate microchip laser crystal has been demonstrated under 4F3∕2 direct excitation at 882 nm. We have found that the laser slope efficiency increases from 50% up to 70% when resonant pumping is used instead of the traditional 4I9∕2→4F5∕2( 808 nm) pumping. We conclude that the reduction in the pump-induced heat generation achieved by resonant pumping is at the origin of this improvement.
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42.55.Rz Doped-insulator lasers and other solid state lasers
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