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9 Aug 2004

Volume 85, Issue 6, pp. 855-1088

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1072 (2004); http://dx.doi.org/10.1063/1.1781351 (3 pages)

Liang-Shan Chen, Chao-Hsien Kuo, and Zhen Ye
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Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K

M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, and S. Ghosh

Appl. Phys. Lett. 85, 973 (2004); http://dx.doi.org/10.1063/1.1781361 (3 pages) | Cited 38 times

Online Publication Date: 4 August 2004

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The magnetic and structural properties of InAs:Mn self-organized diluted magnetic quantum dots grown by low-temperature (∼270 °C), solid-source molecular-beam epitaxy using a very low InAs growth rate (<0.1 ML∕s) are investigated. A Curie temperature (TC) of ∼350 K is measured in a sample grown with a Mn∕In flux ratio of 0.15. Electron energy-loss spectroscopy confirms that most of the Mn remains within the InAs quantum dots. We propose as a possible explanation for this high TC the effects of magnetic and structural disorder introduced by a random incorporation and inhomogeneous distribution of Mn atoms amongst the InAs quantum dots.
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68.65.Hb Quantum dots (patterned in quantum wells)
75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.07.Ta Quantum dots
75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
79.20.Uv Electron energy loss spectroscopy

Epitaxial growth of MgB2(0001) thin films on magnesium single-crystals

C. Cepek, R. Macovez, M. Sancrotti, L. Petaccia, R. Larciprete, S. Lizzit, and A. Goldoni

Appl. Phys. Lett. 85, 976 (2004); http://dx.doi.org/10.1063/1.1777413 (3 pages) | Cited 2 times

Online Publication Date: 4 August 2004

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Phase-pure MgB2 thin films have been grown in ultrahigh-vacuum conditions on Mg(0001) and Mg(10math0) at low-temperature (185–220°C) via molecular beam epitaxy. By depositing B on the Mg substrate a maximum film thickness of ∼4 ML can be achieved, while thicker layers can be obtained by codeposition of Mg and B. Thick films grown on Mg(0001) show a sharp hexagonal low energy electron diffraction pattern, as well as the angle resolved photoemission band structure and x-ray absorption features of MgB2(0001) surface. Poor long-range order can be achieved by codeposition on Mg(10math0). This method allows important in situ measurements, may enable the controlled doping of MgB2, and could be used to realize MgB2-based superconducting devices.
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74.78.-w Superconducting films and low-dimensional structures
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
74.25.Jb Electronic structure (photoemission, etc.)
74.25.F- Transport properties
78.70.Dm X-ray absorption spectra
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.55.-a Thin film structure and morphology
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