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16 Aug 2004

Volume 85, Issue 7, pp. 1095-1302

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1277 (2004); http://dx.doi.org/10.1063/1.1783021 (3 pages)

Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, and Yasuo Takahashi
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Multilevel memory using an electrically formed single-electron box

Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, and Yasuo Takahashi

Appl. Phys. Lett. 85, 1277 (2004); http://dx.doi.org/10.1063/1.1783021 (3 pages) | Cited 13 times

Online Publication Date: 10 August 2004

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A multilevel dynamic random-access memory using a single-electron box (SEB) and single-electron transistor (SET) is fabricated on a silicon-on-insulator substrate. A one-dimensional field-effect transistor (FET), which is connected to the SEB, modulates a barrier potential to precisely control the number of electrons one by one in the SEB by means of the Coulomb-blockade phenomenon. At room temperature and 26 K, we demonstrate a multilevel memory, in which each interval between the levels is given by a single electron, by using the SET electrometer coupled capacitively to the SEB. The control of stored electrons by the FET assures long-retention time and high-speed write/erase operation.
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84.30.Sk Pulse and digital circuits
85.35.Gv Single electron devices
85.30.Tv Field effect devices
73.23.Hk Coulomb blockade; single-electron tunneling

Enhanced luminescence in top-gate-type organic light-emitting transistors

Byoungchoo Park and Hideo Takezoe

Appl. Phys. Lett. 85, 1280 (2004); http://dx.doi.org/10.1063/1.1784044 (3 pages) | Cited 6 times

Online Publication Date: 10 August 2004

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We have studied the structure and operating characteristics of top-gate-type organic light-emitting transistors (OLETs). The OLET is composed of an anode (source), organic layers including an organic electroluminescent (EL) layer, a cathode (drain) being opposed to the anode, and a gate, formed outside of the region between the anode and the cathode. EL characteristics of the OLET show that the luminescent intensity from the organic layers can be balanced by applying the bias voltage of the gate electrode.
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85.60.Jb Light-emitting devices
85.30.Tv Field effect devices
78.60.Fi Electroluminescence

Organic light-emitting diodes based on a blend of poly[2-(2-ethylhexyloxy)-5-methoxy-1,4-phenylenevinylene] and an electron transporting material

J. H. Ahn, C. Wang, C. Pearson, M. R. Bryce, and M. C. Petty

Appl. Phys. Lett. 85, 1283 (2004); http://dx.doi.org/10.1063/1.1776621 (3 pages) | Cited 18 times

Online Publication Date: 10 August 2004

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Organic light-emitting devices (OLEDs) containing a blend of poly[2-(2-ethylhexyloxy)-5-methoxy-1,4-phenylenevinylene] (MEH-PPV) and an electron transporting material, 2,7-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazol-5-yl]-9,9-dihexylfluorene have been fabricated. The external quantum efficiencies of the OLEDs containing the electron transport compound were increased significantly over those obtained for devices based only on MEH-PPV. For example, the efficiency for a device incorporating 95% of electron transport compound was two orders of magnitude greater than that for a nonblended device. In all of our investigations, the electroluminescence (orange/yellow emission) originated exclusively from the MEH-PPV material, even for very high concentrations (>90%) of the electron transport component.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Effects of varying interfacial oxide and high-k layer thicknesses for HfO2 metal–oxide–semiconductor field effect transistor

Se Jong Rhee, Chang Yong Kang, Chang Seok Kang, Rino Choi, Chang Hwan Choi, Mohammad S. Akbar, and Jack C. Lee

Appl. Phys. Lett. 85, 1286 (2004); http://dx.doi.org/10.1063/1.1773370 (3 pages) | Cited 12 times

Online Publication Date: 10 August 2004

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A metal–oxide–semiconductor capacitor and field effect transistor with a hafnium oxide (HfO2) dielectric have been fabricated. Various thicknesses of interfacial oxide and HfO2 film have been used. The results show that the flatband voltage changed due to the change in the physical thickness of the HfO2 film, and not that of the interfacial oxide layer. In addition, the effective channel electron mobility depends on both the amount of fixed charges and the distance from the fixed charges to the Si surface. The results also suggest that the fixed charges are rather uniformly distributed throughout the bulk of high-k layer.
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85.30.Tv Field effect devices
84.32.Tt Capacitors
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Fr Low-field transport and mobility; piezoresistance
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