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16 Aug 2004

Volume 85, Issue 7, pp. 1095-1302

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1277 (2004); http://dx.doi.org/10.1063/1.1783021 (3 pages)

Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, and Yasuo Takahashi
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Resonance-cone focusing in a compensating bilayer of continuous hyperbolic microstrip grids

Omar Siddiqui and George V. Eleftheriades

Appl. Phys. Lett. 85, 1292 (2004); http://dx.doi.org/10.1063/1.1781360 (3 pages) | Cited 5 times

Online Publication Date: 10 August 2004

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We propose a periodic structure synthesized by arranging continuous transmission-line segments in a two-dimensional planar grid over a ground plane. The periodic grid exhibits hyperbolic spatial dispersion characteristics, leading to the formation of highly directive beams called “resonance cones.” Simulations and experiments at 10 GHz show negative refraction and frequency-dependent spatial focusing of the resonance cones, when two such grids with compensating phase properties are interfaced to form a bilayer. The proposed structures are deprived of loading elements or vias, thus leading to ease of fabrication and scalability with frequency for applications, such as spatial filters, multiplexers, and demultiplexers.
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84.40.Az Waveguides, transmission lines, striplines
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Variation of sidewall roughness of polymeric waveguides during reactive ion etching

S. K. Pani, C. C. Wong, and K. Sudharsanam

Appl. Phys. Lett. 85, 1295 (2004); http://dx.doi.org/10.1063/1.1779355 (3 pages) | Cited 2 times

Online Publication Date: 10 August 2004

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Sidewall roughness (SWR) of fluorinated polyether waveguides fabricated using reactive ion etching was directly measured using atomic force microscopy. We confirmed the pressure dependence of SWR for shallow structures and discovered an additional etch depth dependence for deeper structures which counteracts the pressure dependence. Lower O2 pressure etching produces SWR which increases with depth while higher O2 pressure etching produces declining SWR with depth. Addition of N2 to the etch ambient suppresses SWR for high pressure etches at intermediate depths. The role of N2 is possibly related to the formation of a N-containing passivating film, confirmed by secondary ion mass spectroscopy measurements.
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42.79.Gn Optical waveguides and couplers
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.70.Jk Polymers and organics

X-ray fluoresced high-Z (up to Z=82) K x rays produced by LiNbO3 and LiTaO3 pyroelectric crystal electron accelerators

James D. Brownridge and Stephen M. Shafroth

Appl. Phys. Lett. 85, 1298 (2004); http://dx.doi.org/10.1063/1.1782260 (3 pages) | Cited 6 times

Online Publication Date: 10 August 2004

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High-energy bremsstrahlung and K x rays were used to produce nearly background-free K x-ray spectra of up to 87 keV (Pb) via x-ray fluorescence. The fluorescing radiation was produced by electron accelerators, consisting of heated and cooled cylindrical LiTaO3 and LiNbO3 crystals at mTorr pressures. The process of gas amplification whereby the ambient gas pressure is optimized to maximize the electron energy was used to produce energetic electrons which when incident on a W∕Bi target, gave rise to a radiation field consisting of high-energy bremsstrahlung as well as W and Bi K x rays. These photons were used to fluoresce Ta and Pb K x rays.
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78.70.En X-ray emission spectra and fluorescence
07.85.Fv X- and γ-ray sources, mirrors, gratings, and detectors
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