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16 Aug 2004

Volume 85, Issue 7, pp. 1095-1302

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1277 (2004); http://dx.doi.org/10.1063/1.1783021 (3 pages)

Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, and Yasuo Takahashi
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Comparative study of magnetization reversal in isolated and strayfield coupled microcontacts

Guido Meier, René Eiselt, Markus Bolte, Miriam Barthelmeß, Thomas Eimüller, and Peter Fischer

Appl. Phys. Lett. 85, 1193 (2004); http://dx.doi.org/10.1063/1.1777824 (3 pages) | Cited 7 times

Online Publication Date: 10 August 2004

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Ferromagnetic microcontacts are key components for future spintronic devices in full metal as well as in hybrid ferromagnet/semiconductor systems. Control of the micromagnetic behavior and especially the reversal process is crucial for the functionality of such devices. We have prepared isolated and strayfield coupled micron sized rectangular Ni∕Fe double layer contacts on silicon nitride membranes. High-resolution magnetic microscopy studies in external fields are performed on identical samples comparing full field magnetic transmission x-ray microscopy and magnetic-force microscopy. The results of both techniques are in good agreement. We find evidence for a strayfield-induced coupling of the domain structure in adjacent contacts in accordance with micromagnetic simulations.
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75.50.Bb Fe and its alloys
75.60.Jk Magnetization reversal mechanisms
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.60.Ch Domain walls and domain structure
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
68.37.Rt Magnetic force microscopy (MFM)
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

Measurements of low-frequency noise spectral densities for a small-sized stack of intrinsic Josephson junctions of Bi2Sr2CaCu2Oy single crystal

A. Saito, H. Ishida, K. Hamasaki, A. Irie, and G. Oya

Appl. Phys. Lett. 85, 1196 (2004); http://dx.doi.org/10.1063/1.1780601 (3 pages) | Cited 4 times

Online Publication Date: 10 August 2004

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We measured the low-frequency-voltage noise properties of a small-sized stack of intrinsic Josephson junctions formed on the surface of a cleaved Bi2Sr2CaCu2Oy (Bi-2212) single crystal, containing a few intrinsic Josephson junctions. A stack with an area of 2×2 μm was fabricated by electron-beam lithography and argon-ion-milling. The current–voltage (I–V) characteristics along the c-axis direction of the stack were measured by a three-terminal method. The stack showed (I–V) and dV∕dI-V curves without backbending due to heating effects. Five discrete resistive branches with hysteresis were observed in the low-voltage region of these curves. The measured noise-voltage spectral density SV(f) had a 1∕f dependence on frequency. We estimated the magnitude of the 1∕f noise parameter η from SV(f) in a Bi-2212 stack and found that above the sum-gap voltage in a small-sized stack η was almost the same as that for low-Tc Nb∕Al+AlOx∕Nb high-quality tunnel junctions.
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74.72.-h Cuprate superconductors
74.40.-n Fluctuation phenomena
74.50.+r Tunneling phenomena; Josephson effects
74.81.Fa Josephson junction arrays and wire networks
81.65.Cf Surface cleaning, etching, patterning

Stress-induced magnetization for epitaxial spinel ferrite films through interface engineering

Naoki Wakiya, Kazuo Shinozaki, and Nobuyasu Mizutani

Appl. Phys. Lett. 85, 1199 (2004); http://dx.doi.org/10.1063/1.1780603 (3 pages) | Cited 18 times

Online Publication Date: 10 August 2004

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This study found “stress-induced magnetization” for epitaxial ferrite films with spinel structure. We grew (111)- and (001)-epitaxial Ni0.17Zn0.23Fe2.60O4(NZF) films on CeO2∕Y0.15Zr0.85O1.93(YSZ)∕Si(001) and oxide single-crystal substrates, respectively. There is a window of lattice mismatch (between 0 and 6.5%) to achieve bulk saturation magnetization (Ms). An NZF film grown on CeO2∕YSZ∕∕Si(001) showed tensile stress, but that stress was relaxed by introducing a ZnCo2O4(ZC) buffer layer. NZF films grown on SrTiO3(ST)(001) and (La,Sr)(Al,Ta)O3(LSAT)(001) had compressive stress, which was enhanced by introducing a ZC buffer layer. In both cases, bulk Ms was achieved by introducing the ZC buffer layer. This similarity suggests that magnetization can be controlled by the stress.
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75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.80.+q Magnetomechanical effects, magnetostriction
68.60.Bs Mechanical and acoustical properties
68.55.A- Nucleation and growth
75.50.Gg Ferrimagnetics
81.15.Fg Pulsed laser ablation deposition
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances

Midgap state-based π-junctions for digital applications

G. Testa, A. Monaco, E. Esposito, E. Sarnelli, D.-J. Kang, S. H. Mennema, E. J. Tarte, and M. G. Blamire

Appl. Phys. Lett. 85, 1202 (2004); http://dx.doi.org/10.1063/1.1781744 (3 pages) | Cited 11 times

Online Publication Date: 10 August 2004

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Midgap state-based YBa2Cu3O7−x π-junctions have been fabricated by a focused ion-beam system using 45° symmetric [001] tilt SrTiO3 bicrystal substrates. Measurements, performed by inserting the junctions in a superconducting loop (as a double-phase sensitive test), show both an unconventional nonmonotonic temperature dependence of the Josephson current, with a local minimum at a crossover temperature T* and, around T*, a half flux quantum shift in the critical current versus magnetic field modulations, clear signs of a 0–π crossover with temperature. Such results demonstrate that conventional 45° symmetric grain boundary junctions may have potential for applications, from digital circuits to quantum computing.
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85.25.Dq Superconducting quantum interference devices (SQUIDs)
74.25.Sv Critical currents
74.50.+r Tunneling phenomena; Josephson effects
74.70.Dd Ternary, quaternary, and multinary compounds (including Chevrel phases, borocarbides, etc.)
81.15.Fg Pulsed laser ablation deposition

Spin-transfer effects in nanoscale magnetic tunnel junctions

G. D. Fuchs, N. C. Emley, I. N. Krivorotov, P. M. Braganca, E. M. Ryan, S. I. Kiselev, J. C. Sankey, D. C. Ralph, R. A. Buhrman, and J. A. Katine

Appl. Phys. Lett. 85, 1205 (2004); http://dx.doi.org/10.1063/1.1781769 (3 pages) | Cited 125 times

Online Publication Date: 10 August 2004

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We report measurements of magnetic switching and steady-state magnetic precession driven by spin-polarized currents in nanoscale magnetic tunnel junctions with low-resistance, <5 Ω μm2, barriers. The current densities required for magnetic switching are similar to values for all-metallic spin-valve devices. In the tunnel junctions, spin-transfer-driven switching can occur at voltages that are high enough to quench the tunnel magnetoresistance, demonstrating that the current remains spin polarized at these voltages.
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72.25.Mk Spin transport through interfaces
75.50.Bb Fe and its alloys
75.50.Tt Fine-particle systems; nanocrystalline materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
72.15.Gd Galvanomagnetic and other magnetotransport effects
75.47.Np Metals and alloys
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
81.40.Gh Other heat and thermomechanical treatments

Electric-pulse-induced reflectance change in the thin film of perovskite manganite

K. Aoyama, K. Waku, A. Asanuma, Y. Uesu, and T. Katsufuji

Appl. Phys. Lett. 85, 1208 (2004); http://dx.doi.org/10.1063/1.1782268 (3 pages) | Cited 25 times

Online Publication Date: 10 August 2004

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We demonstrate a nonvolatile, reversible change of infrared reflectance from the thin film of perovskite manganite (Pr1−xCaxMnO3) by applying electric pulse. The result provides a possibility to use the electric-pulse-induced phenomena of this compound in optical devices.
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78.66.Nk Insulators
78.30.Hv Other nonmetallic inorganics
75.70.-i Magnetic properties of thin films, surfaces, and interfaces
78.20.Jq Electro-optical effects
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