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16 Aug 2004

Volume 85, Issue 7, pp. 1095-1302

Issue Cover Spotlight Figure

Appl. Phys. Lett. 85, 1277 (2004); http://dx.doi.org/10.1063/1.1783021 (3 pages)

Katsuhiko Nishiguchi, Hiroshi Inokawa, Yukinori Ono, Akira Fujiwara, and Yasuo Takahashi
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Absolute determination of film thickness from photoemission: Application to atomically uniform films of Pb on Si

M. H. Upton, T. Miller, and T.-C. Chiang

Appl. Phys. Lett. 85, 1235 (2004); http://dx.doi.org/10.1063/1.1783019 (3 pages) | Cited 10 times

Online Publication Date: 10 August 2004

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We report on a method to unequivocally determine the thickness of a film in terms of atomic layers, as demonstrated by a study of Pb growth on Si(111). Deposition at low temperatures on a pretreated Si substrate results in atomically uniform Pb films. These films exhibit large monolayer-by-monolayer variations in electronic structure as observed by angle-resolved photoemission. Intense and sharp peaks derived from quantum-well states are observed for odd film thicknesses N=5, 7, and 9 monolayers, but not for the adjacent even film thicknesses N=4, 6, 8, and 10 monolayers. The dramatic differences facilitate an accurate calibration of the amount of Pb deposited.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.55.A- Nucleation and growth
73.21.Fg Quantum wells
81.07.St Quantum wells
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
71.20.Gj Other metals and alloys
73.20.At Surface states, band structure, electron density of states

Strained layer instabilities on vicinal surfaces: Ge0.8Si0.2 epitaxy on laser textured Si(001)

Fumiya Watanabe, David G. Cahill, Sukwon Hong, and Joseph E. Greene

Appl. Phys. Lett. 85, 1238 (2004); http://dx.doi.org/10.1063/1.1780604 (3 pages) | Cited 13 times

Online Publication Date: 10 August 2004

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Laser textured substrates enable a combinatorial study of strained layer growth morphology as a function of substrate miscut. Si(001) substrates with miscut θ<15° off (001) are produced by texturing with nanosecond laser pulses. Ge0.8Si0.2 growth rates are varied over a wide range, 1.7–90 monolayers per minute, at a fixed substrate temperature of 600 °C. Film morphologies at all growth rates show strong dependence on the local miscut θ within the dimpled regions of the substrate: the results demonstrate the importance of anisotropy in surface stiffness for the formation of epitaxial nanostructures. The length scales of all structures display a similar trend of decreasing size with increasing growth rate due to the suppression of coarsening at high growth rates.
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81.05.Hd Other semiconductors
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
79.20.Ds Laser-beam impact phenomena
68.60.Bs Mechanical and acoustical properties
61.82.Fk Semiconductors
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Fabrication of single nanofluidic channels in poly(methylmethacrylate) films via focused-ion beam milling for use as molecular gates

Donald M. Cannon, Bruce R. Flachsbart, Mark A. Shannon, Jonathan V. Sweedler, and Paul W. Bohn

Appl. Phys. Lett. 85, 1241 (2004); http://dx.doi.org/10.1063/1.1780605 (3 pages) | Cited 18 times

Online Publication Date: 10 August 2004

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Focused-ion beam (FIB) milling provides rapid fabrication of individual cylindrical submicrometer channels with reproducible dimensions (±5% diameters) through 8‐μm thick poly(methylmethacrylate) (PMMA) films. PMMA films are spincast on sacrificial Si carriers and sputter-coated with Au before the 30‐kV gallium FIB milling process. By adding a trace amount of poly(ethyleneoxide) and poly(dimethylsiloxane) to the PMMA solution before casting, the films can be released for subsequent mounting in microfluidic devices to create hybrid microfluidic-nanofluidic multilevel architectures. In situ FIB sectioning demonstrates the smooth cylindrical surface within the pore. Placing a milled film in contact with an aqueous fluorescein solution fills the channel by capillary action, as verified by confocal fluorescence microscopy. Confocal fluorescence of dyed films reveals that the pores span the thickness of the PMMA film. Small arrays of channels with a defined number and density and arbitrary in-plane spatial arrangement are fabricated with this process, allowing a unique testbed for high aspect ratio nanofluidic devices.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
68.55.A- Nucleation and growth
78.55.-m Photoluminescence, properties and materials
81.15.Cd Deposition by sputtering

Room temperature synthesis of carbon nanofibers containing nitrogen by plasma-enhanced chemical vapor deposition

T. M. Minea, S. Point, A. Granier, and M. Touzeau

Appl. Phys. Lett. 85, 1244 (2004); http://dx.doi.org/10.1063/1.1781352 (3 pages) | Cited 21 times

Online Publication Date: 10 August 2004

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This letter reports low-pressure, room-temperature growth of carbon nanofibers containing nitrogen by plasma chemical vapor deposition arrangement. By alternating pure acetylene plasma and afterglow pure nitrogen high dense plasma, a fine control of the fibers growth kinetic is obtained. This layer-by-layer deposition technique takes advantage of nitrogen chemical etching effects during the growth of nitrogen-doped carbon nanofibers.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.Cf Surface cleaning, etching, patterning
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Ion-beam-induced sharpening of ZnO nanotips

Pan Wu, Gaurav Saraf, Yicheng Lu, David H. Hill, Robert A. Bartynski, Dario A. Arena, Mee-Yi Ryu, Jeremy A. Raley, and Yung Kee Yeo

Appl. Phys. Lett. 85, 1247 (2004); http://dx.doi.org/10.1063/1.1784043 (3 pages) | Cited 3 times

Online Publication Date: 10 August 2004

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Fe ions of dose 5×1016 cm−2 were implanted at 200 keV into ZnO nanotips at room temperature. Scanning electron microscopy images show that the implanted ZnO tips are much sharper than the as-grown ones. The sharpening effect of the ZnO nanotips is attributed to the interplay between ion sputtering and ion-induced surface diffusion. X-ray diffraction indicates that ZnO crystallinity was preserved during implantation. Photoluminescence measurements show development of a broad blue band and severe UV quenching upon ion bombardment, and partial recovery after annealing. X-ray absorption spectroscopy is consistent with Fe ions that are substitutional for Zn in the ZnO wurtzite lattice.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.72.up Other materials
81.07.-b Nanoscale materials and structures: fabrication and characterization

Dynamic measurement of electrical conductivity of carbon nanotubes during mechanical deformation by nanoprobe manipulation in transmission electron microscopy

Toru Kuzumaki and Yoshitaka Mitsuda

Appl. Phys. Lett. 85, 1250 (2004); http://dx.doi.org/10.1063/1.1784536 (3 pages) | Cited 10 times

Online Publication Date: 10 August 2004

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The effect of mechanical deformation on the electrical characteristics of individual multiwall carbon nanotubes (MWCNTs) was investigated by a nanoprobe manipulation technique in a transmission electron microscope (TEM). The electrical conductivity was measured during the deformation of the MWCNT in TEM. The electrical conductivity of the MWCNTs was sensitive to structural variation. The electromechanical characteristics were reversible within the elastic limit. However, when lattice defects were formed due to deformation, the electrical conductivity was not restored to the original state, even when the applied stress was released.
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73.63.Fg Nanotubes
73.40.Cg Contact resistance, contact potential
73.61.Wp Fullerenes and related materials
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Synthesis of 4 math single-walled carbon nanotubes in catalytic Si-substituted AlPO4‐5 molecular sieves

Z. M. Li, J. P. Zhai, H. J. Liu, I. L. Li, C. T. Chan, Ping Sheng, and Z. K. Tang

Appl. Phys. Lett. 85, 1253 (2004); http://dx.doi.org/10.1063/1.1781740 (3 pages) | Cited 14 times

Online Publication Date: 10 August 2004

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4 math single-walled carbon nanotubes (SWCNs) were fabricated using Si-substituted AlPO4‐5 (SAPO-5) molecular sieves as the template. In comparison with neutral AlPO4‐5, the SAPO-5 framework plays an important role as a catalyst in pyrolyzing the hydrocarbon molecules, owing to the Bo̸nsted acid sites. The first-principles calculation shows the Si decoration to be very favorable to the formation of carbon nanotubes in the SAPO-5 channels. The resulting SWCNs have better quality than those fabricated without Si doping, evidenced by clearer and stronger radial breathing modes in the Raman spectra.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
78.30.Hv Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Optical and electrical transport properties in silicon carbide nanowires

Han-Kyu Seong, Heon-Jin Choi, Sang-Kwon Lee, Jung-Il Lee, and Doo-Jin Choi

Appl. Phys. Lett. 85, 1256 (2004); http://dx.doi.org/10.1063/1.1781749 (3 pages) | Cited 61 times

Online Publication Date: 10 August 2004

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We report on the optical and electrical transport properties of single-crystalline silicon carbide nanowires (SiC NWs). The NWs were fabricated by a chemical vapor deposition process, and had diameters of <100 nm and lengths of several μm. X-ray diffraction and transmission electron microscopy analysis showed the single-crystalline nature of NWs with a growth direction of 〈111〉. Photoluminescence characterization showed blue emission at room temperature. The electrical measurements from a field effect transistor structure on individual NWs showed n-type semiconductor characteristics. The resistivity and estimated electron mobility on the NWs are 2.2×10−2 Ω cm for 0 V of gate voltage and 15 cm2∕(V s), respectively. Our low-resistivity SiC NWs could be applied to a high-temperature operation sensor and actuator due to its own excellent electrical and optical properties.
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85.30.Tv Field effect devices
73.40.Ns Metal-nonmetal contacts
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.07.-b Nanoscale materials and structures: fabrication and characterization
78.55.Hx Other solid inorganic materials
72.20.Fr Low-field transport and mobility; piezoresistance
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Enhancement of optical properties of CdSe pillars fabricated by the combination of electron-beam lithography and electrochemical deposition

Y. L. Chen, C. C. Chen, J. C. Jeng, and Y. F. Chen

Appl. Phys. Lett. 85, 1259 (2004); http://dx.doi.org/10.1063/1.1782251 (3 pages) | Cited 10 times

Online Publication Date: 10 August 2004

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Combining electron-beam lithography and electrochemical deposition, CdSe pillars can be fabricated in a specific shape and size in a well controlled manner. This simple technique provides an excellent opportunity to probe the change of optical properties of submicron structures due to size variation. Quite interestingly, it is found that the intensities of micro-photoluminescence as well as Raman scattering show an oscillatory behavior and can be enhanced at some particular diameters of CdSe pillars. This phenomenon can be well explained in terms of the resonant effects, in which the CdSe pillars can act as resonance cavities. Once the wavelengths of incident laser or the luminescence emitted from CdSe pillars are consistent with the predicted Fabry–Perot resonance, the optical properties can be greatly enhanced.
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81.05.Dz II-VI semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
61.46.-w Structure of nanoscale materials
81.16.Nd Micro- and nanolithography
81.15.Pq Electrodeposition, electroplating
78.30.Fs III-V and II-VI semiconductors

Formation and optical properties of stacked GaN self-assembled quantum dots grown by metalorganic chemical vapor deposition

K. Hoshino, S. Kako, and Y. Arakawa

Appl. Phys. Lett. 85, 1262 (2004); http://dx.doi.org/10.1063/1.1784524 (3 pages) | Cited 20 times

Online Publication Date: 10 August 2004

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Multiple-layer stacked GaN quantum dots (QDs) with intense photoluminescence (PL) have been successfully grown by the Stranski-Krastanow growth mode in metalorganic chemical vapor deposition. Transmission electron microscopy (TEM) and scanning TEM analyses showed vertically aligned QDs resulting from a strain field induced by the buried islands. A redshift and linewidth narrowing of the PL spectra for the multilayered structures indicate that the size of the QDs becomes larger and more uniform throughout the layering process. The PL intensity increased with increasing the number of stacked layers, indicating that the QDs can be stacked without introducing new nonradiative recombination centers.
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78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
81.16.Dn Self-assembly

Free-standing subnanometer graphite sheets

J. J. Wang, M. Y. Zhu, R. A. Outlaw, X. Zhao, D. M. Manos, B. C. Holloway, and V. P. Mammana

Appl. Phys. Lett. 85, 1265 (2004); http://dx.doi.org/10.1063/1.1782253 (3 pages) | Cited 133 times

Online Publication Date: 10 August 2004

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Free-standing graphite sheets with thickness less than 1 nm, “carbon nanosheets,” were synthesized on a variety of substrates by radio-frequency plasma-enhanced chemical vapor deposition without any catalyst or special substrate treatment. The nanosheets consist of one to three graphene layers with a large smooth surface topography, standing roughly vertical to the substrate. Due to the atomic thickness and corrugated nature of nanosheets, low-energy vibrational modes are present in the Raman spectra. The low turn-on field of 4.7 V/μm for electron field emission suggests that the carbon nanosheets could be used as a potential edge emitter.
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81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.30.Hv Other nonmetallic inorganics
79.70.+q Field emission, ionization, evaporation, and desorption
81.65.-b Surface treatments

Birefringence in optical waveguides made by silicon nanocrystal superlattices

F. Riboli, D. Navarro-Urrios, A. Chiasera, N. Daldosso, L. Pavesi, C. J. Oton, J. Heitmann, L. X. Yi, R. Scholz, and M. Zacharias

Appl. Phys. Lett. 85, 1268 (2004); http://dx.doi.org/10.1063/1.1779969 (3 pages) | Cited 7 times

Online Publication Date: 10 August 2004

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We investigate the optical properties of planar waveguides where the core layer is formed by a silicon nanocrystals (Si-nc)∕SiO2 superlattice. M-line measurements of the different waveguides yield the mode indices, which can be modeled by assuming anisotropic optical properties of the core layer. This anisotropy is related to the superlattice, i.e., it is a form birefringence. By modeling the m-line measurements with the structural data obtained by transmission electron microscopy analysis, we determine for each waveguide the value of the form birefringence, an upper limit of the nanocrystals size and their refractive index. Values of the form birefringence as high as 1% have been found.
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42.79.Gn Optical waveguides and couplers
61.46.-w Structure of nanoscale materials
78.20.Fm Birefringence
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.37.Lp Transmission electron microscopy (TEM)

Chemically resolved electrical measurements using x-ray photoelectron spectroscopy

Hagai Cohen

Appl. Phys. Lett. 85, 1271 (2004); http://dx.doi.org/10.1063/1.1782261 (3 pages) | Cited 18 times

Online Publication Date: 10 August 2004

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Noncontact chemically resolved electrical measurements are presented, capable of probing selected regions within fine heterostructures. Using a slightly modified x-ray photoelectron spectrometer, an effective means is demonstrated for measuring I–V curves of molecular layers, free of substrate and contact contributions. The concept is simple and general, revealing unique details on electrical response mechanisms. Realized with commonly available equipment, it should be effective for a broad range of heterostructured systems.
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84.37.+q Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)
85.65.+h Molecular electronic devices

Quartz micromachining using laser plasma soft x rays and ultraviolet laser light

Tetsuya Makimura, Shinjo Mitani, Youichi Kenmotsu, Kouichi Murakami, Michiaki Mori, and Kiminori Kondo

Appl. Phys. Lett. 85, 1274 (2004); http://dx.doi.org/10.1063/1.1782265 (3 pages) | Cited 22 times

Online Publication Date: 10 August 2004

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We have investigated a technique for micromachining inorganic transparent materials. In the technique, patterning and coloration are performed by the direct irradiation of materials with pulsed laser soft x rays and the patterned areas are ablated using ultraviolet laser light. The technique utilizes the high precision of the soft x rays and the high energy density of conventional laser light. For demonstration, we irradiated quartz plates with Ta laser plasma soft x rays. This results in generation of transient surface opaque layers that absorb more than 40% of the 266 nm Nd:YAG laser light. Applying the technique, quartz plates are found to be ablated smoothly at 85 nm∕shots.
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42.70.Ce Glasses, quartz
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.80.Cb X-ray effects
61.82.Ms Insulators
52.38.Mf Laser ablation
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