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3 Jan 2005

Volume 86, Issue 1, Articles (01xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 011105 (2005); http://dx.doi.org/10.1063/1.1842853 (3 pages)

J. Heikenfeld and A. J. Steckl
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Three-dimensional macroporous silicon photonic crystal with large photonic band gap

J. Schilling, J. White, A. Scherer, G. Stupian, R. Hillebrand, and U. Gösele

Appl. Phys. Lett. 86, 011101 (2005); http://dx.doi.org/10.1063/1.1842855 (3 pages) | Cited 24 times

Online Publication Date: 22 December 2004

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Three-dimensional photonic crystals based on macroporous silicon are fabricated by photoelectrochemical etching and subsequent focused-ion-beam drilling. Reflection measurements show a high reflection in the range of the stopgap and indicate the spectral position of the complete photonic band gap. The onset of diffraction which might influence the measurement is discussed.
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81.05.Rm Porous materials; granular materials
42.70.Qs Photonic bandgap materials
81.65.Cf Surface cleaning, etching, patterning
81.05.Cy Elemental semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.43.Gt Powders, porous materials

Optical probing of sample heating in scanning near-field experiments with apertured probes

G. Latini, A. Downes, O. Fenwick, A. Ambrosio, M. Allegrini, C. Daniel, C. Silva, P. G. Gucciardi, S. Patanè, R. Daik, W. J. Feast, and F. Cacialli

Appl. Phys. Lett. 86, 011102 (2005); http://dx.doi.org/10.1063/1.1842860 (3 pages) | Cited 10 times

Online Publication Date: 22 December 2004

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We have used the inherent thermochromism of conjugated polymers to investigate substrate heating effects in scanning near-field experiments with metal-coated “apertured” probes. Chemically etched and pulled fibers were used to provide near-field excitation of fully converted films of poly(p-phenylene vinylene), PPV, and of poly(4,4′-diphenylene diphenylvinylene). We detect no significant blueshift of the photoluminescence spectra generated with near-field excitation, in comparison to those collected with far-field excitation. We conclude that polymer heating in the region contributing to the luminescence is less than 40 K. We also demonstrate that thermolithography of the PPV precursor is not significant by comparing UV (325 nm) and red (670 nm) illumination.
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78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
68.37.Uv Near-field scanning microscopy and spectroscopy
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Pv Polymers, organic compounds

Backscattering limitation for fiber-optic quantum key distribution systems

Darius Subacius, Anton Zavriyev, and Alexei Trifonov

Appl. Phys. Lett. 86, 011103 (2005); http://dx.doi.org/10.1063/1.1842862 (3 pages) | Cited 15 times

Online Publication Date: 22 December 2004

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We characterized backscattering effects in optical fiber using a photon counting technique and considered its implications for quantum key distribution (QKD). We found that Rayleigh (elastic) backscattering can put strong limitations on a two-way QKD system’s performance. Raman (inelastic) scattering can restrict the ability of wavelength multiplexing of a quantum channel with strong classical data channel(s).
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42.81.Dp Propagation, scattering, and losses; solitons
42.50.Ar Photon statistics and coherence theory
03.67.Dd Quantum cryptography and communication security
42.81.Uv Fiber networks

Reshaping of a second-harmonic curve in periodically poled Ti:LiNbO3 channel waveguide by a local-temperature-control technique

Yeung Lak Lee, Young-Chul Noh, Changsoo Jung, Tae Jun Yu, Bong-Ahn Yu, Jongmin Lee, Do-Kyeong Ko, and Kyunghwan Oh

Appl. Phys. Lett. 86, 011104 (2005); http://dx.doi.org/10.1063/1.1842854 (3 pages) | Cited 10 times

Online Publication Date: 22 December 2004

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We have demonstrated reshaping and bandwidth control of a second-harmonic (SH) curve in a periodically poled Ti:LiNbO3 (Ti:PPLN) waveguide (Λ = 16.6 μm) by using a local-temperature-control technique. With this technique, we have achieved several useful shapes of the SH curve such as an almost ideal sinc function, and double and multipeaks in a 74-mm-long Ti:PPLN waveguide, which has a prechirped SH curve at room temperature. More than 60% improvement of SH conversion efficiency and a 5 nm broadening of SH phase-matching bandwidth were achieved.
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42.79.Gn Optical waveguides and couplers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Intense switchable fluorescence in light wave coupled electrowetting devices

J. Heikenfeld and A. J. Steckl

Appl. Phys. Lett. 86, 011105 (2005); http://dx.doi.org/10.1063/1.1842853 (3 pages) | Cited 18 times

Online Publication Date: 22 December 2004

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Switchable fluorescence has been obtained from light wave coupled (LWC) electrowetting (EW) devices fabricated on an optical waveguide substrate. The LWC device structure contains a polar water component and a nonpolar oil component that compete for placement on a hydrophobic surface under the influence of an applied electric field. The oil film contains organic lumophores that fluoresce intense red (608 nm), green (503 nm), and blue (433 nm) light with ∼ 90% quantum efficiency when excited by violet light. Violet InGaN light-emitting diodes (LEDs) couple ∼ 405 nm excitation light into the waveguide substrate. EW of the water layer displaces the fluorescent oil film such that it is either optically coupled to, or decoupled from, the underlying waveguide. The output luminance can be modulated from >100 cd/m2 to <5 cd/m2 as a dc voltage ranging from 0 to −24 V is applied to the water layer. Maximum luminance of 15×30 arrays of the devices may exceed ∼ 500 cd/m2 by simply increasing the output of the InGaN LEDs.
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42.79.Gn Optical waveguides and couplers
68.08.Bc Wetting
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds

High-efficiency surface-emitting channel drop filters in two-dimensional photonic crystal slabs

Bok-Ki Min, Jae-Eun Kim, and Hae Yong Park

Appl. Phys. Lett. 86, 011106 (2005); http://dx.doi.org/10.1063/1.1843275 (3 pages) | Cited 9 times

Online Publication Date: 22 December 2004

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We analyze theoretically the output efficiencies of surface-emitting channel drop filters using channel drop tunneling processes in two-dimensional photonic crystal slabs. By using the channel drop tunneling processes, the output efficiencies of the filters can be easily improved to the values much higher than 50%, the maximum output efficiency of surface-emitting channel drop filters using one single-mode cavity, and the output efficiency of 100% is possible theoretically. In order to demonstrate the theoretical results, we present a surface emitting channel drop filter using the channel drop tunneling processes in a two-dimensional photonic crystal slab. The output efficiency of the presented filter is about 94% in good agreement with the theoretical analysis.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Gn Optical waveguides and couplers

Magneto-optical nanoparticle-doped silica-titania planar waveguides

F. Royer, D. Jamon, J. J. Rousseau, H. Roux, D. Zins, and V. Cabuil

Appl. Phys. Lett. 86, 011107 (2005); http://dx.doi.org/10.1063/1.1844038 (3 pages) | Cited 9 times

Online Publication Date: 22 December 2004

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This letter describes how composite material, made of maghemite (γ‐Fe2O3) nanoparticles embedded in a silica∕titania matrix, can be used to develop new magneto-optical planar waveguides. Thin film samples are coated on Pyrex™ substrates from a magnetic particles doped sol-gel preparation. M-lines spectroscopy measurements performed on these samples show that an out of plane magnetic field applied during the gelation induces a decrease of the planar waveguide phase mismatch. Free space measurements evidence the Faraday rotation of the films up to 25°/cm at 633 nm. Improvements and leads of further works are proposed in term of magneto-optical waveguide applications.
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42.79.Gn Optical waveguides and couplers
85.70.Sq Magnetooptical devices
78.20.Ls Magneto-optical effects

Fabrication and characterization of face-centered-cubic void dots photonic crystals in a solid polymer material

Guangyong Zhou, Michael James Ventura, Michael Ross Vanner, and Min Gu

Appl. Phys. Lett. 86, 011108 (2005); http://dx.doi.org/10.1063/1.1844039 (3 pages) | Cited 9 times

Online Publication Date: 22 December 2004

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Spherical void dots with a diameter of 1.2–1.8 μm have been generated in a solid polymer material by use of the ultrafast laser driven micro-explosion method. Micron-sized structures with a face-centered cubic lattice stacked in the [100] and [111] directions have been fabricated. Confocal microscopic images show the high uniformity of the fabricated structures. Photonic stopgaps with a suppression rate of approximately 70% as well as the second-order stopgaps have been observed in both directions. It is shown that the dependence of the stopgaps on the illumination angle in the [100] direction is significantly different from that in the [111] direction.
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42.70.Qs Photonic bandgap materials
42.70.Jk Polymers and organics
42.82.Cr Fabrication techniques; lithography, pattern transfer
61.82.Pv Polymers, organic compounds
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Room-temperature 3.9–4.3 μm photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix

V. A. Solov’ev, O. G. Lyublinskaya, A. N. Semenov, B. Ya. Meltser, D. D. Solnyshkov, Ya. V. Terent’ev, L. A. Prokopova, A. A. Toropov, S. V. Ivanov, and P. S. Kop’ev

Appl. Phys. Lett. 86, 011109 (2005); http://dx.doi.org/10.1063/1.1844042 (3 pages) | Cited 11 times

Online Publication Date: 22 December 2004

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We report on molecular beam epitaxial growth of InSb submonolayer insertions in an InAs matrix, exhibiting intense mid-IR photoluminescence (PL) up to room temperature (RT). The InSb insertions are fabricated by an exposure of InAs surface to an antimony Sb4 flux. The nominal thickness of insertions grown at different temperatures (TS = 400–485 °C) ranges from 0.6 to 1.4 monolayer, as estimated from x-ray diffraction measurements of InSb/InAs multiple submonolayer structures. This gives rise to the variation of the emission wavelength within the 3.9–4.3 μm range at RT. An integral PL intensity drop from 77 K to RT does not exceed 20 times.
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81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Electrically switchable mesoscale Penrose quasicrystal structure

Suraj P. Gorkhali, Jun Qi, and Gregory P. Crawford

Appl. Phys. Lett. 86, 011110 (2005); http://dx.doi.org/10.1063/1.1844608 (3 pages) | Cited 30 times

Online Publication Date: 22 December 2004

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We present the design, fabrication, and electro-optical properties of a switchable Penrose quasicrystal configuration in holographic polymer dispersed liquid crystal (H-PDLC) materials using a 5-beam hololithography exposure technique. The Penrose quasicrystal structure is confirmed through diffraction patterns and scanning electron microscopy (SEM); both show the expected tenfold symmetry. We also present electro-optic switching parameters of this quasicrystal structure and determine its index modulation to be 3×10−3 using coupled wave theory.
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61.44.Br Quasicrystals
78.20.Jq Electro-optical effects
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Gain saturation in InP/GaInP quantum-dot lasers

J. Lutti, P. M. Smowton, G. M. Lewis, P. Blood, A. B. Krysa, J. C. Lin, P. A. Houston, A. J. Ramsay, and D. J. Mowbray

Appl. Phys. Lett. 86, 011111 (2005); http://dx.doi.org/10.1063/1.1844600 (3 pages) | Cited 6 times

Online Publication Date: 22 December 2004

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We have measured the gain-current and gain-quasi–Fermi level separation characteristics for InP/AlGaInP quantum-dot-laser structures. Saturation of the gain-current characteristics is apparent even though photoluminescence excitation spectroscopy measurements indicate that the 2D states are energetically distant from the dot states. The gain is reduced from the maximum value by the distribution of carriers in the excited dot states, the states in smaller dots and the 2D states.
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42.55.Px Semiconductor lasers; laser diodes
68.65.Hb Quantum dots (patterned in quantum wells)
73.21.La Quantum dots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

White organic light-emitting devices based on 4,4′-bis(2,2′-diphenyl vinyl)-1,1′-biphenyl and phosphorescence sensitized 5,6,11,12-tetraphenylnaphthacene

Yingfang Zhang, Gang Cheng, Yi Zhao, Jingying Hou, and Shiyong Liu

Appl. Phys. Lett. 86, 011112 (2005); http://dx.doi.org/10.1063/1.1845593 (3 pages) | Cited 26 times

Online Publication Date: 22 December 2004

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We report white organic light-emitting devices (WOLEDs) based on 4,4′-bis(2,2′-diphenyl vinyl)-1,1′-biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12-tetraphenylnaphthacene (rubrene). In the devices, DPVBi acts as a blue light-emitting layer, and rubrene sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer. The devices have a maximum brightness of 8633 cd/m2 (at a driving voltage of 22 V). The maximum luminous efficiency is 9.22 cd/A (at a current density of 0.90 mA/cm2). Commission international De L’Eclairage coordination of (0.30,0.37) is obtained for luminance ranging from 100 to 1000 cd/m2.
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85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.55.Qr Amorphous materials; glasses and other disordered solids

Effect of amplified spontaneous emission and absorber mirror recovery time on the dynamics of mode-locked fiber lasers

Robert Herda and Oleg G. Okhotnikov

Appl. Phys. Lett. 86, 011113 (2005); http://dx.doi.org/10.1063/1.1845589 (3 pages) | Cited 16 times

Online Publication Date: 27 December 2004

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The effect of the amplified spontaneous emission (ASE) on the performance of the semiconductor saturable absorber mirrors (SESAMs) in mode-locked fiber lasers has been investigated. We show that high level of ASE intensity typical for fiber lasers can saturate the absorption and degrade significantly the nonlinear response of the SESAM. We studied the effect of the absorber recovery time and demonstrated that the ion-irradiated SESAMs with fast nonlinear response are less affected by the ASE radiation and, consequently, in the presence of the high-power ASE they exhibit better self-starting capability compared with slow absorbers.
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42.55.Wd Fiber lasers
42.60.Fc Modulation, tuning, and mode locking
78.45.+h Stimulated emission

Blue-violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular-beam epitaxy

C. Skierbiszewski, Z. R. Wasilewski, M. Siekacz, A. Feduniewicz, P. Perlin, P. Wisniewski, J. Borysiuk, I. Grzegory, M. Leszczynski, T. Suski, and S. Porowski

Appl. Phys. Lett. 86, 011114 (2005); http://dx.doi.org/10.1063/1.1846143 (3 pages) | Cited 19 times

Online Publication Date: 27 December 2004

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We report on the InGaN multiquantum laser diodes (LDs) made by rf plasma-assisted molecular beam epitaxy (PAMBE). The laser operation at 408 nm is demonstrated at room temperature with pulsed current injections using 50 ns pulses at 0.25% duty cycle. The threshold current density and voltage for the LDs with cleaved uncoated mirrors are 12 kA/cm2 (900 mA) and 9 V, respectively. High output power of 0.83 W is obtained during pulse operation at 3.6 A and 9.6 V bias with the slope efficiency of 0.35 W/A. The laser structures are deposited on the high-pressure-grown low dislocation bulk GaN substrates taking full advantage of the adlayer enhanced lateral diffusion channel for adatoms below the dynamic metallic cover. Our devices compare very favorably to the early laser diodes fabricated using the metalorganic vapor phase epitaxy technique, providing evidence that the relatively low growth temperatures used in this process pose no intrinsic limitations on the quality of the blue optoelectronic components that can be fabricated using PAMBE.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.By Design of specific laser systems
78.55.Cr III-V semiconductors
78.67.De Quantum wells
42.79.Bh Lenses, prisms and mirrors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.63.Hs Quantum wells

Time-gated backscattered ballistic light imaging of objects in turbid water

Manuel E. Zevallos L., S. K. Gayen, M. Alrubaiee, and R. R. Alfano

Appl. Phys. Lett. 86, 011115 (2005); http://dx.doi.org/10.1063/1.1846145 (3 pages) | Cited 6 times

Online Publication Date: 27 December 2004

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Time-gated optical imaging of objects in turbid water was carried out in a backscattering geometry using light pulses of different pulse widths and a time-gated detection scheme with variable gate widths. Experimental results demonstrate that ultrashort pulsed illumination with ultrashort gated detection significantly improve image contrast as compared to any other combinations. These results are important for imaging objects embedded in turbid media, such as cloud, fog, smoke, murky water, and biological tissues for military, civilian, and medical applications.
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42.30.Va Image forming and processing
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.30.Sy Pattern recognition
87.63.L- Visual imaging
06.60.Jn High-speed techniques (microsecond to femtosecond)
82.70.Kj Emulsions and suspensions

Doubly resonant photonic crystal for efficient laser operation: Pumping and lasing at low group velocity photonic modes

F. Raineri, G. Vecchi, A. M. Yacomotti, C. Seassal, P. Viktorovitch, R. Raj, and A. Levenson

Appl. Phys. Lett. 86, 011116 (2005); http://dx.doi.org/10.1063/1.1846148 (3 pages) | Cited 6 times

Online Publication Date: 27 December 2004

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An InP-based two-dimensional photonic crystal slab laser is optimized in order to exhibit low group velocity modes both at the pumping and the lasing wavelength. Laser operation is demonstrated at 1566 nm in the pulsed regime. A threshold of 4 kW/cm2 is demonstrated by pumping at the photonic mode lying in the bound quantum well electronic levels, one longitudinal optical phonon energy below the lasing photonic mode.
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85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.55.Tv Photonic crystal lasers and coherent effects
78.67.De Quantum wells
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.55.Cr III-V semiconductors
78.30.Fs III-V and II-VI semiconductors

320×256 solar-blind focal plane arrays based on AlxGa1−xN

R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, and M. Razeghi

Appl. Phys. Lett. 86, 011117 (2005); http://dx.doi.org/10.1063/1.1846936 (3 pages) | Cited 29 times

Online Publication Date: 27 December 2004

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We report AlGaN-based backilluminated solar-blind ultraviolet focal plane arrays operating at a wavelength of 280 nm. The electrical characteristics of the individual pixels are discussed, and the uniformity of the array is presented. The p–i–n photodiode array was hybridized to a 320×256 read-out integrated circuit entirely within our university research lab, and a working 320×256 camera was demonstrated. Several example solar-blind images from the camera are also provided.
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42.79.Pw Imaging detectors and sensors
85.60.Dw Photodiodes; phototransistors; photoresistors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
73.61.Ey III-V semiconductors

Ultraviolet amplified spontaneous emission from self-organized network of zinc oxide nanofibers

C. X. Xu, X. W. Sun, Clement Yuen, B. J. Chen, S. F. Yu, and Z. L. Dong

Appl. Phys. Lett. 86, 011118 (2005); http://dx.doi.org/10.1063/1.1847716 (3 pages) | Cited 25 times

Online Publication Date: 27 December 2004

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Self-organized zinc oxide (ZnO) nanofiber network with six-fold symmetry was fabricated on ZnO-buffered (0001) sapphire substrate with patterned gold catalyst by vapor-phase transport method. From the ZnO buffer layer, hexagonal ZnO nanorods with identical in-plane structure grew epitaxially along [0001] orientation to form vertical stems. The nanofiber branches grew horizontally from six side-surfaces of the vertical stem along [01math0] and other equivalent directions. The aligned network structure constructed a waveguide array with optical gain. Ultraviolet amplified spontaneous emission was observed along the side-branching nanofibers when the aligned ZnO network was excited by a frequency-tripled Nd:YAG laser.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.45.+h Stimulated emission
78.55.Et II-VI semiconductors
61.46.-w Structure of nanoscale materials
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Possibility of transmutation of math by ultraintense laser

R. Takashima, S. Hasegawa, K. Nemoto, and K. Kato

Appl. Phys. Lett. 86, 011501 (2005); http://dx.doi.org/10.1063/1.1847715 (3 pages) | Cited 7 times

Online Publication Date: 27 December 2004

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The possibility of photo-transmutation of long-lived nuclide math by ultrashort ultraintense laser was analytically evaluated. The yield of math(γ,n) math was strongly dependent on the laser intensity at around 1020 W/cm2. If math were irradiated by such a laser with the intensity of 1021 W/cm2 and 10 Hz for 30 min, characteristic γ-ray counting rate was estimated to be 3 Bq.
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28.41.Kw Radioactive wastes, waste disposal
25.20.Lj Photoproduction reactions
27.60.+j 90 ≤ A ≤ 149

Ultraviolet emission from argon water-vapor mixtures excited with low-energy electron beams

A. Morozov, R. Krücken, T. Ottenthal, A. Ulrich, and J. Wieser

Appl. Phys. Lett. 86, 011502 (2005); http://dx.doi.org/10.1063/1.1846155 (3 pages) | Cited 13 times

Online Publication Date: 28 December 2004

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A 310-nm-ultraviolet light source operating at the OH (A math→X math) transition is presented. The OH band is emitted from argon water-vapor mixtures excited with low-energy (15 keV) electron beams. The light output is studied in the argon pressure range from 250 to 1000 hPa. In this study, the highest OH band intensity was observed at the lowest Ar pressure and a water-vapor concentration of about 0.02%. An efficiency of 3% for converting electron beam power into light emission was measured under these conditions.
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51.70.+f Optical and dielectric properties
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Vacancy concentrations in silicon determined by the indiffusion of iridium

L. Lerner and N. A. Stolwijk

Appl. Phys. Lett. 86, 011901 (2005); http://dx.doi.org/10.1063/1.1844031 (3 pages) | Cited 5 times

Online Publication Date: 23 December 2004

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Diffusion of Ir into Si was investigated in the temperature range from 875 to 1050 °C by means of neutron activation analysis and mechanical sectioning. Within the framework of interstitial-substitutional diffusion, previously established for Ir in Si, the measured penetration profiles were simulated by the simultaneous action of the kick-out mechanism and the dissociative mechanism. This enabled us to assess Si vacancy concentrations in thermal equilibrium.
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61.72.J- Point defects and defect clusters
61.72.Yx Interaction between different crystal defects; gettering effect
66.30.J- Diffusion of impurities

Mutual promotion effect of crystal growth in TiN/SiC nanomultilayers

Jijun Lao, Nan Shao, Fanghua Mei, Geyang Li, and Mingyuan Gu

Appl. Phys. Lett. 86, 011902 (2005); http://dx.doi.org/10.1063/1.1844045 (3 pages) | Cited 17 times

Online Publication Date: 23 December 2004

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The mutual promotion effect of crystal growth in TiN/SiC nanomultilayers is described in this letter. TiN, SiC single layers and a series of TiN/SiC multilayers with different thickness of SiC and TiN layers were prepared using magnetron sputtering. Microstructure analysis shows that TiN and SiC single layers exist as nanocrystal and amorphous, respectively. However, in the alternately deposited nanomultilayers of TiN and SiC, due to the influence of crystal structure of TiN layer, SiC layer forms a B1-cubic phase when its thickness is less than 0.6 nm. At the same time, the formation of SiC crystal promotes the growth of TiN layer and greatly improves its integrity when the thickness of the TiN layer is less than 4.3 nm. Due to this effect, TiN/SiC multilayers form a coherent epitaxial grown superlattice within a certain thickness range of TiN and SiC layers. Correspondingly, the multilayers show a superhardness effect which presents an anomalous enhancement of hardness and elastic modulus. The highest hardness of TiN/SiC nanomultilayers reaches 60 GPa.
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81.07.Bc Nanocrystalline materials
68.65.Ac Multilayers
81.15.Cd Deposition by sputtering
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
68.35.Gy Mechanical properties; surface strains

Abnormal contact resistance reduction of bonded copper interconnects in three-dimensional integration during current stressing

K. N. Chen, C. S. Tan, A. Fan, and R. Reif

Appl. Phys. Lett. 86, 011903 (2005); http://dx.doi.org/10.1063/1.1844609 (3 pages) | Cited 13 times

Online Publication Date: 23 December 2004

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Bonded copper interconnects were stressed with current to measure the specific contact resistance. For bonded copper interconnects without a prebonding HCl clean, the corresponding specific contact resistance did not change while increasing the stress current. However, for some interconnects with the prebonding HCl clean, an abnormal contact resistance reduction was observed during the increase of the stress current. The rise of temperature at the bonding interface area due to Joule heating under high current density may have caused the decrease of contact resistance. This behavior may be one option for quality enhancement in 3D integration at low temperature.
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85.40.Ls Metallization, contacts, interconnects; device isolation
73.40.Cg Contact resistance, contact potential
68.35.B- Structure of clean surfaces (and surface reconstruction)

Generation of periodic microrelief in tensioned polymeric substrates with hard coating and their physical properties

Victor Belyaev, Victor Misnik, Sergei Trofimov, Alexander Volynsky, Victor Konovalov, and Anatoly Muravskii

Appl. Phys. Lett. 86, 011904 (2005); http://dx.doi.org/10.1063/1.1845595 (3 pages) | Cited 1 time

Online Publication Date: 23 December 2004

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The effect of formation of a periodic surface microrelief upon tension of polymeric substrates with thin hard coatings under specified conditions (the processing temperature below the glassing temperature, elongation up to 250%, elongation rate <5 mm/min) is described. The microrelief period ranges from 0.5 μm up to hundreds of micrometers, its height up to 1 μm. Methods are proposed to measure low values of the optical path length in media Δn ∼ λ and azimuthal anchoring energy of a liquid crystal on microreliefed surfaces.
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42.79.Wc Optical coatings
42.70.Jk Polymers and organics
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
81.40.Lm Deformation, plasticity, and creep
61.41.+e Polymers, elastomers, and plastics
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
62.20.F- Deformation and plasticity

Large blueshift of the band gap of GaAsSb/AlSb quantum wells with ion implantation

Xiaolan Sun, Nasser Peyghambarian, Alan R. Kost, and Nayer Eradat

Appl. Phys. Lett. 86, 011905 (2005); http://dx.doi.org/10.1063/1.1845596 (3 pages) | Cited 1 time

Online Publication Date: 23 December 2004

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We describe studies of intermixing in GaAsSb/AlSb quantum wells with 18.8% and 31% arsenic, grown on GaSb substrates. Samples were implanted with a 1×1013 cm−2 dose of 330 keV boron ions and annealed. The band gap for the samples was determined from photoluminescence. The maximum blueshift of the band gap was 141 nm (86 meV) for the quantum wells with 18.8% arsenic and 198 nm (124 meV) for the quantum wells with 31% arsenic. The blueshifts are attributed to interdiffusion of both group-III and group-V constituents. Photoluminescence strength generally increased with annealing temperature.
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73.21.Fg Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
61.72.uj III-V and II-VI semiconductors
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
61.72.Cc Kinetics of defect formation and annealing
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