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7 Mar 2005

Volume 86, Issue 10, Articles (10xxxx)

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Appl. Phys. Lett. 86, 103102 (2005); http://dx.doi.org/10.1063/1.1875734 (3 pages)

Tadashi Kawazoe, Kiyoshi Kobayashi, and Motoichi Ohtsu
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Extremely low frequency response of magnetoelectric multilayer composites

Shuxiang Dong, Junyi Zhai, Zhengping Xing, Jie-Fang Li, and D. Viehland

Appl. Phys. Lett. 86, 102901 (2005); http://dx.doi.org/10.1063/1.1881784 (3 pages) | Cited 37 times

Online Publication Date: 28 February 2005

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A promising generation of extremely low frequency magnetic field sensors, based on multilayer composites (MLCs) of magnetostrictive Terfenol-D (Tb1−xDyxFe2−y) and piezoelectric Pb(Mg1/3Nb2/3)O3–PbTiO3, has been developed. Our MLC magnetoelectric sensor presently shows a limit in (i) working frequency of ∼ 5×10−3 Hz; and (ii) magnetic field sensitivity of 10−7, 10−9, and 10−11 T for frequencies of f = 10−2, 1, and 102 Hz, respectively. The results open up possibilities for sensitive low frequency passive magnetic anomaly detection.
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07.55.Ge Magnetometers for magnetic field measurements
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
75.80.+q Magnetomechanical effects, magnetostriction

Real space imaging of the microscopic origins of the ultrahigh dielectric constant in polycrystalline CaCu3Ti4O12

S. V. Kalinin, J. Shin, G. M. Veith, A. P. Baddorf, M. V. Lobanov, H. Runge, and M. Greenblatt

Appl. Phys. Lett. 86, 102902 (2005); http://dx.doi.org/10.1063/1.1880432 (3 pages) | Cited 34 times

Online Publication Date: 28 February 2005

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The origins of an ultrahigh dielectric constant in polycrystalline CaCu3Ti4O12 (CCTO) were studied using the combination of impedance spectroscopy, electron microscopy, and scanning probe microscopy (SPM). Impedance spectra indicate that the transport properties in the 0.1 Hz–1 MHz frequency range are dominated by a single parallel resistive-capacitive (RC) element with a characteristic relaxation frequency of 16 Hz. dc potential distributions measurements by SPM illustrate that significant potential drops occur at the grain boundaries, which thus can be unambiguously identified as the dominant RC element. High frequency ac amplitude and phase distributions illustrate very weak grain boundary contrast in SPM, indicative of strong capacitive coupling across the interfaces. These results demonstrate that the ultrahigh dielectric constant reported for polycrystalline CCTO materials is related to grain-boundary behavior.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
77.22.Ch Permittivity (dielectric function)
77.22.Gm Dielectric loss and relaxation
61.72.Mm Grain and twin boundaries

Correlation of nanochemistry and electrical properties in HfO2 films grown by metalorganic molecular-beam epitaxy

Tae-Hyoung Moon, Moon-Ho Ham, and Jae-Min Myoung

Appl. Phys. Lett. 86, 102903 (2005); http://dx.doi.org/10.1063/1.1873049 (3 pages) | Cited 8 times

Online Publication Date: 28 February 2005

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We present the annealing effects on nanochemistry and electrical properties in HfO2 dielectrics grown by metalorganic molecular-beam epitaxy. After the postannealing treatment of HfO2 films in the temperature range of 600–800 °C, the thicknesses and chemical states of the films were examined by high-resolution transmission electron microscopy and angle-resolved x-ray photoelectron spectroscopy. By comparing the line shapes of core-level spectra for the samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700 °C. This result supports that the accumulation capacitance of the sample annealed at 700 °C is not deteriorated in spite of a steep increase in interfacial layer thickness compared with that of the sample annealed at 600 °C.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.61.Ng Insulators
77.22.Ch Permittivity (dielectric function)
81.40.Gh Other heat and thermomechanical treatments
72.20.Fr Low-field transport and mobility; piezoresistance
68.55.-a Thin film structure and morphology
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.37.Lp Transmission electron microscopy (TEM)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Piezoelectric–piezomagnetic multilayer with simultaneously negative permeability and permittivity

H. Liu, S. N. Zhu, Y. Y. Zhu, Y. F. Chen, N. B. Ming, and X. Zhang

Appl. Phys. Lett. 86, 102904 (2005); http://dx.doi.org/10.1063/1.1868073 (3 pages) | Cited 6 times

Online Publication Date: 1 March 2005

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We study the propagation of an electromagnetic (EM) wave in piezoelectric–piezomagnetic multilayers, in which the incident EM wave excites high frequency acoustic waves and couples strongly with them through piezoelectric and piezomagnetic effects, creating dielectric polariton and magnetic polariton simultaneously. The dispersion abnormality appears at some frequency ranges where simultaneous negative permittivity and permeability can be achieved. Theoretical analysis and numerical simulation proved that this structure forms a kind of “left-handed” material.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
75.50.Dd Nonmetallic ferromagnetic materials
75.80.+q Magnetomechanical effects, magnetostriction
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
77.22.Ch Permittivity (dielectric function)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Electron trap distribution in thin oxide after high-field stress

K. P. Cheung, D. Hits, and Y. Wang

Appl. Phys. Lett. 86, 102905 (2005); http://dx.doi.org/10.1063/1.1879088 (3 pages) | Cited 3 times

Online Publication Date: 2 March 2005

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The centroid of neutral electron trap distribution in 80 Å SiO2 film after high-field electrical stress is determined using trap-filling measurements that can eliminate the contributions from trapped holes and interface trapped charges—complications that introduce ambiguity in previous studies. The centroid is found to be roughly half way between the midpoint of the oxide and the injecting electrode, implying an extremely nonuniform distribution. Such a highly nonuniform distribution is at odds with the assumption used in most oxide breakdown models. The impact of a highly nonuniform neutral trap distribution on thin oxide reliability projection could be important.
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73.61.Ng Insulators
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Ht Other nonmetals
72.20.Ht High-field and nonlinear effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species
84.32.Tt Capacitors
85.30.Tv Field effect devices

Permittivity increase of yttrium-doped HfO2 through structural phase transformation

Koji Kita, Kentaro Kyuno, and Akira Toriumi

Appl. Phys. Lett. 86, 102906 (2005); http://dx.doi.org/10.1063/1.1880436 (3 pages) | Cited 50 times

Online Publication Date: 3 March 2005

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An approach to control the dielectric properties of hafnium-based oxide films with an intentional structural phase transformation was proposed and demonstrated. Yttrium serves effectively as a dopant to induce a phase transformation from the monoclinic to the cubic phase even at 600 °C. The yttrium-doped HfO2 films show higher permittivity than undoped HfO2, and the permittivity as high as 27 is obtained by 4 at. % yttrium doping. The permittivity enhancement by yttrium doping can be explained by the shrinkage of molar volume due to the structural phase transformation. The advantage of yttrium doping is more pronounced at higher temperatures, since the permittivity of undoped HfO2 is reduced significantly, whereas that of 17 at. % yttrium-doped film shows no change even at 1000 °C.
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.22.Ch Permittivity (dielectric function)
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Tv Optical and dielectric properties related to treatment conditions

Critical thickness of ultrathin ferroelectric BaTiO3 films

Y. S. Kim, D. H. Kim, J. D. Kim, Y. J. Chang, T. W. Noh, J. H. Kong, K. Char, Y. D. Park, S. D. Bu, J.-G. Yoon, and J.-S. Chung

Appl. Phys. Lett. 86, 102907 (2005); http://dx.doi.org/10.1063/1.1880443 (3 pages) | Cited 71 times

Online Publication Date: 3 March 2005

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To investigate the critical thickness of ferroelectric BaTiO3 (BTO) films, we fabricated fully strained SrRuO3/BTO/SrRuO3 heterostructures on SrTiO3 substrates by pulsed laser deposition with in situ reflection high-energy electron diffraction. We varied the BTO layer thickness from 3 to 30 nm. By fabricating 10×10 μm2 capacitors, we could observe polarization versus electric-field hysteresis loops, which demonstrate the existence of ferroelectricity in BTO layers thicker than 5 nm. This observation provides an experimental upper bound of 5 nm for the critical thickness. The BTO thickness-dependent scaling of the remanent polarization agrees with the predictions of recent first-principle simulations [ J. Junquera and P. Ghosez, Nature 422, 506 (2003) ].
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77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
68.55.-a Thin film structure and morphology
84.32.Tt Capacitors
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
68.35.B- Structure of clean surfaces (and surface reconstruction)
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