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14 Mar 2005

Volume 86, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 86, 113104 (2005); http://dx.doi.org/10.1063/1.1883725 (3 pages)

S. Bhattacharyya, C. Sinturel, J. P. Salvetat, and M.-L. Saboungi
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Hybrid solar cells with vertically aligned CdTe nanorods and a conjugated polymer

Yoonmook Kang, Nam-Gyu Park, and Donghwan Kim

Appl. Phys. Lett. 86, 113101 (2005); http://dx.doi.org/10.1063/1.1883319 (3 pages) | Cited 43 times

Online Publication Date: 7 March 2005

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Vertically aligned CdTe nanorods were fabricated by electrodeposition and were applied for the active layer of solar cells after being combined with poly(3-octylthiophene) (P3OT), a conjugated polymer. The electrodeposited CdTe showed an n-type behavior with the electric resistivity and the electron density of 2×106 Ω cm, 1.3×1010 cm−3, respectively. Quantum efficiency curve of the hybrid solar cells exhibited a peak at the same wavelength as the optical absorption for CdTe nanorods. The hybrid solar cells demonstrated a power conversion efficiency of 1.06%, whereas the efficiency was only 0.0006% without the nanorods.
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84.60.Jt Photoelectric conversion

Controlling the properties of InGaAs quantum dots by selective-area epitaxy

S. Mokkapati, P. Lever, H. H. Tan, C. Jagadish, K. E. McBean, and M. R. Phillips

Appl. Phys. Lett. 86, 113102 (2005); http://dx.doi.org/10.1063/1.1875745 (3 pages) | Cited 11 times

Online Publication Date: 8 March 2005

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Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150–1230 nm, in different parts of the same wafer are achieved.
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81.05.Ea III-V semiconductors
81.07.Ta Quantum dots
81.07.St Quantum wells
68.65.Fg Quantum wells
68.65.Hb Quantum dots (patterned in quantum wells)
42.82.Cr Fabrication techniques; lithography, pattern transfer
78.67.Hc Quantum dots
78.67.De Quantum wells
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.60.Hk Cathodoluminescence, ionoluminescence
68.37.Ps Atomic force microscopy (AFM)

Optical response of a ferromagnetic-diluted magnetic semiconductor hybrid structure

P. Redliński, T. G. Rappoport, A. Libal, J. K. Furdyna, B. Jankó, and T. Wojtowicz

Appl. Phys. Lett. 86, 113103 (2005); http://dx.doi.org/10.1063/1.1883325 (3 pages) | Cited 6 times

Online Publication Date: 8 March 2005

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We investigate the possibility of using local magnetic fields to produce one-dimensional traps in hybrid structures for any quasiparticle possessing a spin degree of freedom. We consider a system composed of a diluted magnetic semiconductor quantum well buried below a micron-sized ferromagnetic island. A localized magnetic field is produced by a rectangular ferromagnet kept in a single domain phase. We make quantitative predictions for the optical response of the system as a function of distance between the micromagnet and the quantum well, electronic g factor, and thickness of the micromagnet.
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75.50.Pp Magnetic semiconductors
75.50.Bb Fe and its alloys
78.20.Ls Magneto-optical effects
78.67.De Quantum wells
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.40.Mg Numerical simulation studies
75.60.Ch Domain walls and domain structure
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Protein-functionalized carbon nanotube-polymer composites

S. Bhattacharyya, C. Sinturel, J. P. Salvetat, and M.-L. Saboungi

Appl. Phys. Lett. 86, 113104 (2005); http://dx.doi.org/10.1063/1.1883725 (3 pages) | Cited 26 times

Online Publication Date: 8 March 2005

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We have developed fully integrated nanotube composite materials through the functionalization of multiwall carbon nanotubes (MWCNTs) by covalently attaching ferritin protein molecules onto the surface of MWCNTs. The investigation of the thermomechanical behavior was performed by dynamic mechanical thermal analysis. Results demonstrated dramatic enhancement in the mechanical properties of PVA, for example a 100%–110% increase in the modulus with the addition of 1.5 wt % of ferritin functionalized MWCNTs. Samples containing functionalized nanotubes showed a stronger influence on glass transition temperature in comparison to composites containing the same amount of nonfunctionalized nanotubes.
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81.05.Qk Reinforced polymers and polymer-based composites
81.07.-b Nanoscale materials and structures: fabrication and characterization
62.25.-g Mechanical properties of nanoscale systems
68.35.Gy Mechanical properties; surface strains
81.16.-c Methods of micro- and nanofabrication and processing
81.40.Gh Other heat and thermomechanical treatments
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
87.14.E- Proteins

Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2 stack as the tunnel dielectric

Shiye Wang, Weili Liu, Qing Wan, J. Y. Dai, P. F. Lee, Luo Suhua, Qinwo Shen, Miao Zhang, Zhitang Song, and Chenglu Lin

Appl. Phys. Lett. 86, 113105 (2005); http://dx.doi.org/10.1063/1.1864254 (3 pages) | Cited 9 times

Online Publication Date: 8 March 2005

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A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2/SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2/SiO2 stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2 layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current–voltage (I–V) and capacitance–voltage (C–V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012 cm−2 was achieved.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.S- Impurities in crystals
77.55.-g Dielectric thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.Cc Kinetics of defect formation and annealing
61.46.-w Structure of nanoscale materials
68.37.Lp Transmission electron microscopy (TEM)

Evolution of elongated (In,Ga)As–GaAs(100) islands with low indium content

S. O. Cho, Zh. M. Wang, and G. J. Salamo

Appl. Phys. Lett. 86, 113106 (2005); http://dx.doi.org/10.1063/1.1883709 (3 pages) | Cited 20 times

Online Publication Date: 8 March 2005

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Nucleation and growth of (In,Ga)As–GaAs(100) islands with low In content by molecular-beam epitaxy is investigated by scanning tunneling microscopy. The islands tend to nucleate at upper convex edges of surface steps due to elastic strain relaxation. They are elongated along [01-1] with a flat top (100) facet. The growth of the islands, mainly through uphill transport of the (In,Ga)As material, is characterized by shrinking of the top (100) facet but the ratio of island elongation keeps constant.
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81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
81.40.Lm Deformation, plasticity, and creep
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.F- Deformation and plasticity
62.20.D- Elasticity

Field electron emission from sputter-induced carbon nanofibers grown at room temperature

Masaki Tanemura, J. Tanaka, K. Itoh, Y. Fujimoto, Y. Agawa, L. Miao, and S. Tanemura

Appl. Phys. Lett. 86, 113107 (2005); http://dx.doi.org/10.1063/1.1884749 (3 pages) | Cited 43 times

Online Publication Date: 9 March 2005

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Graphite, carbon-coated silicon, and carbon-coated nickel surfaces were bombarded with obliquely incident Ar+ ions at room temperature. The sputtered surfaces were covered with conical protrusions, ∼ 2.5×105 mm−2 or higher in numerical density, and partially aligned single carbon nanofibers (CNFs), ∼ 20 nm in diameter and 0.3‐2 μm in length, grew on the tips. They were characterized by the amorphous nature and the boundaryless structure between the CNF and the conical base. The field electron emission measurements for the CNFs thus grown on the carbon-coated silicon substrate showed the threshold field of 1.8 V/μm with a current density of 1 μA/cm2, and the field enhancement factor was estimated to be 1951 from the Fowler-Nordheim plot assuming the work function of 4.6 eV for graphite. The morphological structure of CNFs grown on conical bases was thought to be effective to reduce the screening effect due to sufficient distance between adjacent CNFs. Thus, the sputter-induced CNFs were concluded to be quite promising as a field electron emission source.
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81.05.U- Carbon/carbon-based materials
81.07.Bc Nanocrystalline materials
79.70.+q Field emission, ionization, evaporation, and desorption
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.16.-c Methods of micro- and nanofabrication and processing
61.46.-w Structure of nanoscale materials
61.43.Er Other amorphous solids

Two-dimensional exciton behavior in GaN nanocolumns grown by molecular-beam epitaxy

Jong H. Na, Robert A. Taylor, James H. Rice, James W. Robinson, Kwan H. Lee, Young S. Park, Chang M. Park, and Tae W. Kang

Appl. Phys. Lett. 86, 113108 (2005); http://dx.doi.org/10.1063/1.1885187 (3 pages) | Cited 16 times

Online Publication Date: 9 March 2005

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We have investigated the behavior of excitons in GaN nanocolumns using time-integrated and time-resolved micro-photoluminescence measurements. In the weak confinement limit, the model of fractional-dimensional space gives an intermediate dimensionality of 2.14 for GaN nanocolumns, with an average diameter of 80 nm. Enhanced exciton and donor binding energies are deduced from a fractional-dimensional model and a phenomenological description. Time-integrated photoluminescence spectra as a function of temperature show a curved emission shift. Recombination dynamics are deduced from the temperature dependence of the PL efficiency and decay times.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Cr III-V semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra
78.47.-p Spectroscopy of solid state dynamics
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Fabrication and near-infrared photothermal conversion characteristics of Au nanoshells

Zhongxin Liu, Hongwei Song, Lixin Yu, and Linmei Yang

Appl. Phys. Lett. 86, 113109 (2005); http://dx.doi.org/10.1063/1.1874308 (3 pages) | Cited 16 times

Online Publication Date: 9 March 2005

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In this letter, gold nanoshells with a size of ∼ 20 nm were prepared by a wet-chemical synthesis method and the surface plasmon absorption band of gold was tuned from visible to near-infrared. The gold nanoshell hydrosol demonstrated excellent photothermal conversion property. The temperature of the hydrosol was increased to as high as 30 °C under exposure of an 808 nm coherent diode laser with a powder density of 5 W/cm2. This kind of gold nanoshell hydrosol is promising for use in biomedicine through photothermal conversion.
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81.07.Bc Nanocrystalline materials
81.05.Bx Metals, semimetals, and alloys
81.16.Be Chemical synthesis methods
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
87.85.J- Biomaterials
78.30.Er Solid metals and alloys
78.40.Kc Metals, semimetals, and alloys
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations
82.70.Gg Gels and sols
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Bg Metals and alloys
61.82.Rx Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Self-organized growth of InAs quantum wires and dots on InP(001): The role of vicinal substrates

O. Bierwagen and W. T. Masselink

Appl. Phys. Lett. 86, 113110 (2005); http://dx.doi.org/10.1063/1.1884762 (3 pages) | Cited 24 times

Online Publication Date: 10 March 2005

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We have studied the self-organized growth of InAs nanostructures in an InP matrix by gas-source molecular-beam epitaxy on both nominally oriented and vicinal InP(001). Atomic force microscopy and low-temperature photoluminescence demonstrate that the off-cut direction of vicinal substrates—largely independent of growth conditions—determines the morphology of nanostructures, that is, quantum dot, quantum wire, or two-dimensional growth; whereas, on nominally oriented substrates, the morphology is very strongly dependent on the growth conditions.
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81.05.Ea III-V semiconductors
81.07.Vb Quantum wires
81.07.Ta Quantum dots
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.16.Dn Self-assembly
78.67.Lt Quantum wires
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
68.65.La Quantum wires (patterned in quantum wells)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)

Electron and hole spin dynamics in semiconductor quantum dots

K. Gündoğdu, K. C. Hall, E. J. Koerperick, C. E. Pryor, M. E. Flatté, Thomas F. Boggess, O. B. Shchekin, and D. G. Deppe

Appl. Phys. Lett. 86, 113111 (2005); http://dx.doi.org/10.1063/1.1857067 (3 pages) | Cited 15 times

Online Publication Date: 10 March 2005

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We report direct measurement of the spin dynamics of electrons and holes in self-assembled InAs quantum dots (QDs) through polarization-sensitive time-resolved photoluminescence experiments on modulation-doped quantum dot heterostructures. Our measured hole spin decay time is considerably longer than in bulk and quantum well semiconductor systems, indicating that the removal of near degenerate hole states with different spin quantization axes through three-dimensional confinement slows hole spin relaxation in semiconductors. The electron and hole spin decay times we observe (electrons: 120 ps; holes: 29 ps) are consistent with spin relaxation via phonon-mediated virtual scattering between the lowest two confined levels in the QDs, which have a mixed spin character due to the spin–orbit interaction.
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73.21.La Quantum dots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.20.At Surface states, band structure, electron density of states
78.47.-p Spectroscopy of solid state dynamics

Cathodoluminescence from β‐Ga2O3 nanowires

E. Nogales, B. Méndez, and J. Piqueras

Appl. Phys. Lett. 86, 113112 (2005); http://dx.doi.org/10.1063/1.1883713 (3 pages) | Cited 37 times

Online Publication Date: 10 March 2005

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β‐Ga2O3 nano- and microwires with diameters ranging from tens of nanometers to about one micron and lengths of up to tens of microns, have been obtained by sintering Ga2O3 powder under argon flow. The structures have been investigated by cathodoluminescence in the scanning electron microscope. The samples showed the violet-blue emission characteristic of Ga2O3 and a red emission at 1.73 eV dominant in the nanowires and other nano- and microstructures formed during the sintering treatment. At temperatures below 210 K, this band exhibits sharp peaks separated by 20 meV. This observation suggests the exchange of phonons in the recombination process.
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81.07.Bc Nanocrystalline materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.46.-w Structure of nanoscale materials
78.60.Hk Cathodoluminescence, ionoluminescence
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
81.16.-c Methods of micro- and nanofabrication and processing
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Structural dynamics of gas-phase molybdenum nanoclusters: A transmission electron microscopy study

T. Vystavel, S. A. Koch, G. Palasantzas, and J. Th. M. De Hosson

Appl. Phys. Lett. 86, 113113 (2005); http://dx.doi.org/10.1063/1.1886261 (3 pages) | Cited 3 times

Online Publication Date: 14 March 2005

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In this paper we study structural aspects of molybdenum clusters by transmission electron microscopy. The deposited clusters with sizes 4 nm or larger show a body-centered crystal (bcc) structure. The clusters are self-assembled from smaller structural units and form cuboids with a typical size of 4 nm or larger. With reducing cluster size, the face-centered crystal (fcc) structure appears due to dominance of surface energy minimization, while self-assembly into large cuboids with sizes up to 30 nm is still observed. Our observation implies that the basic building blocks of large cuboids are actually not smaller cubes. Annealing leads to cluster coalescence at temperatures ∼ 800 °C, with the crystal habit changing to truncated rhombic dodecahedron for isolated clusters, while the large cuboidally shaped particles become more faceted polyhedra.
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81.07.Bc Nanocrystalline materials
64.70.Nd Structural transitions in nanoscale materials
81.05.Bx Metals, semimetals, and alloys
61.46.-w Structure of nanoscale materials
64.70.K- Solid-solid transitions
68.37.Lp Transmission electron microscopy (TEM)
68.35.Md Surface thermodynamics, surface energies
81.16.Dn Self-assembly
81.40.Gh Other heat and thermomechanical treatments

Electric field switching between blue-green and red cathodoluminescence in poly(4,4′- diphenylene diphenylvinylene) mixed with ZnO:Mg nanoparticles

G. N. Panin, T. W. Kang, A. N. Aleshin, A. N. Baranov, Y.-J. Oh, and I. A. Khotina

Appl. Phys. Lett. 86, 113114 (2005); http://dx.doi.org/10.1063/1.1886911 (3 pages) | Cited 6 times

Online Publication Date: 11 March 2005

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We report the effect of reversible switching between blue-green and red cathodoluminescence (CL) in poly(4,4′-diphenylene diphenylvinylene) (PDPV), mixed with the 12–60 nm size ZnO:Mg nanoparticles by applying an electric field. We found that without electric field the CL emission maximum is in the blue-green region for a PDPV–ZnO:Mg composite deposited on Si–SiO2 substrate with gold electrodes. Application of positive bias suppressed the blue-green emission and shifted the emission maximum to the red region. The mechanism for the formation of the exited states in PDPV–ZnO:Mg structure implies the presence of radiative recombination channels, which can be controlled by an electric field.
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78.20.Jq Electro-optical effects
78.60.Hk Cathodoluminescence, ionoluminescence
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters

Air-stable n-type carbon nanotube field-effect transistors with Si3N4 passivation films fabricated by catalytic chemical vapor deposition

Daisuke Kaminishi, Hirokazu Ozaki, Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue, Kazuhiko Matsumoto, Yasuhiro Seri, Atsushi Masuda, and Hideki Matsumura

Appl. Phys. Lett. 86, 113115 (2005); http://dx.doi.org/10.1063/1.1886898 (3 pages) | Cited 43 times

Online Publication Date: 11 March 2005

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Air-stable n-type carbon nanotube field-effect transistors (CNTFETs) were fabricated, with Si3N4 passivation films formed by catalytic chemical vapor deposition (Cat-CVD). Electrical measurements reveal that the p-type characteristics of CNTFETs are converted to n-type after fabricating Si3N4 passivation films at 270 °C. This indicates that adsorbed oxygen on the CNT sidewalls was removed during the formation process of the Si3N4 passivation films. In addition, the source-drain current of the n-type CNTFETs does not change over time under vacuum, or in air. Consequently, the n-type CNTFETs are completely protected by the Si3N4 passivation film from further effects of ambient gases. Therefore, Cat-CVD is one of the best candidates to fabricate Si3N4 passivation films on CNTFETs.
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85.30.Tv Field effect devices
85.35.Kt Nanotube devices
81.07.De Nanotubes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
81.65.Rv Passivation
73.63.Fg Nanotubes

Characteristics and photoluminescence of nanotubes and nanowires of poly (3-methylthiophene)

D. H. Park, B. H. Kim, M. G. Jang, K. Y. Bae, and J. Joo

Appl. Phys. Lett. 86, 113116 (2005); http://dx.doi.org/10.1063/1.1887818 (3 pages) | Cited 28 times

Online Publication Date: 11 March 2005

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We synthesized nanotubes and nanowires of π-conjugated poly (3-methylthiophene) (P3MT) by using nanoporous anodic aluminum oxide (Al2O3) template through electrochemical polymerization method. From scanning electron microscope and transmission electron microscope photographs, we observed the formation of nanotubes with diameters of 100–200 nm and wall thicknesses of 5–10 nm. Relatively long nanotubes and nanowires of P3MT (about 40 μm in length) were obtained. To discern the structural and optical properties of the systems, we measured ultraviolet and visible absorbance and Fourier transform-infrared spectroscopy. We observed that the doping level, the π‐π* transition peak, and bipolaron peaks in P3MT nanotubes varied with synthetic temperature. The photoluminescence (PL) spectra of the P3MT nanotubes solution were observed at ∼ 490 nm. For the P3MT nanotubes synthesized at lower temperatures, the PL peaks became sharper and the resistance decreased.
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81.07.De Nanotubes
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
78.67.Ch Nanotubes
81.16.Be Chemical synthesis methods
61.46.-w Structure of nanoscale materials
78.55.Kz Solid organic materials
78.55.Qr Amorphous materials; glasses and other disordered solids
61.41.+e Polymers, elastomers, and plastics
81.40.Tv Optical and dielectric properties related to treatment conditions
82.45.Aa Electrochemical synthesis
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

SiO2/PbTe quantum-dot multilayer production and characterization

E. Rodríguez, E. Jimenez, L. A. Padilha, A. A. R. Neves, G. J. Jacob, C. L. César, and L. C. Barbosa

Appl. Phys. Lett. 86, 113117 (2005); http://dx.doi.org/10.1063/1.1887823 (3 pages) | Cited 9 times

Online Publication Date: 11 March 2005

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We report the fabrication of multilayer structures containing layers of PbTe quantum dots (QDs) spaced by 15–20 nm thick SiO2 layers. The QDs were grown by the laser ablation of a PbTe target using the second harmonic of Nd:YAG laser in an argon atmosphere. The SiO2 layers were fabricated by plasma chemical vapor deposition using tetramethoxysilane as a precursor. The influence of the ablation time on the size and size distribution of the QDs is studied by high-resolution transmission electron microscopy. Optical absorption measurements show clearly the QDs confinement effects.
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81.07.Ta Quantum dots
81.05.Hd Other semiconductors
68.65.Hb Quantum dots (patterned in quantum wells)
81.15.Fg Pulsed laser ablation deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.67.Hc Quantum dots
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.65.Ac Multilayers
68.37.Lp Transmission electron microscopy (TEM)
81.05.Kf Glasses (including metallic glasses)

Site-controlled photoluminescence at telecommunication wavelength from InAs∕InP quantum dots

H. Z. Song, T. Usuki, S. Hirose, K. Takemoto, Y. Nakata, N. Yokoyama, and Y. Sakuma

Appl. Phys. Lett. 86, 113118 (2005); http://dx.doi.org/10.1063/1.1887826 (3 pages) | Cited 29 times

Online Publication Date: 11 March 2005

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We fabricated ordered InAs/InP quantum-dot (QD) arrays using atomic-force-microscopic oxidation, wet etching, and regrowth by metalorganic chemical vapor deposition. The QDs exhibit single-dot photoluminescence peaking at wavelengths ranging from 1.22 to 1.45 μm, mostly matching the telecommunication band of optical fibers. The site dependence of single peaks indicates the site controllability of single-dot light emitters, which might be useful in quantum information processing.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
81.65.Mq Oxidation
81.65.Cf Surface cleaning, etching, patterning
68.37.Ps Atomic force microscopy (AFM)
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