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14 Mar 2005

Volume 86, Issue 11, Articles (11xxxx)

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Appl. Phys. Lett. 86, 113104 (2005); http://dx.doi.org/10.1063/1.1883725 (3 pages)

S. Bhattacharyya, C. Sinturel, J. P. Salvetat, and M.-L. Saboungi
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Low-dislocation-density, nonplanar GaN templates for buried heterostructure lasers grown by lateral epitaxial overgrowth

Dawei Ren, Wei Zhou, and P. Daniel Dapkus

Appl. Phys. Lett. 86, 111901 (2005); http://dx.doi.org/10.1063/1.1866502 (3 pages) | Cited 2 times

Online Publication Date: 7 March 2005

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We report here the formation of nonplanar GaN templates, which consist of low-dislocation-density, naturally grown GaN ridge mesas, as a mean to facilitate the fabrication of buried heterostructure lasers. Defect reduction is realized by introducing a two-step lateral epitaxial overgrowth procedure that utilizes dislocation bending in the formation of pyramidal mesas to eradicate the threading dislocations that originate from a planar buffer layer. Transmission electron microscopy and atomic force microscopy indicate a mesa top facet having low defect density ( ∼ 8×107 cm−2), atomic flatness ( ∼ 0.29 nm mean roughness). Our demonstration has opened the possibility of forming buried heterostructure lasers on nonplanar GaN templates.
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81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)
68.37.Ps Atomic force microscopy (AFM)
42.55.Px Semiconductor lasers; laser diodes
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors

Unusual stress behavior in W-incorporated hydrogenated amorphous carbon films

Ai-Ying Wang, Hyo-Shin Ahn, Kwang-Ryeol Lee, and Jae-Pyoung Ahn

Appl. Phys. Lett. 86, 111902 (2005); http://dx.doi.org/10.1063/1.1883328 (3 pages) | Cited 18 times

Online Publication Date: 7 March 2005

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Unusual stress behavior was observed in W-incorporated hydrogenated amorphous carbon films prepared by a hybrid process composed of ion-beam deposition and magnetron sputtering. As the tungsten concentration increased from 0 to 2.8 at.%, the residual compressive stress decreased by 50%, without significant deterioration in the mechanical properties. This was followed by a rapid increase and a gradual decrease in the residual stress with increasing W concentration. High-resolution transmission electron microscopy analysis and first-principle calculations show that the reduced directionality of the W–C bonds in the W-incorporated amorphous carbon matrix relaxes the stress caused by the distorted bonds.
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81.05.U- Carbon/carbon-based materials
68.60.Bs Mechanical and acoustical properties
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.43.Er Other amorphous solids
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.55.-a Thin film structure and morphology
68.37.Lp Transmission electron microscopy (TEM)

Carrier dynamics of low-temperature-grown In0.53Ga0.47As on GaAs using an InGaAlAs metamorphic buffer

Seong June Jo, Soo-Ghang Ihn, Jong-In Song, Ki-Ju Yee, and Dong-Han Lee

Appl. Phys. Lett. 86, 111903 (2005); http://dx.doi.org/10.1063/1.1872207 (3 pages) | Cited 2 times

Online Publication Date: 7 March 2005

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Structural and carrier dynamic properties of low-temperature-grown In0.53Ga0.47As (LT-InGaAs) on GaAs using an InGaAlAs metamorphic buffer were studied. Investigation of dependence of the structural and carrier dynamic properties of the LT-InGaAs on annealing temperature showed that they were closely related. The use of the metamorphic buffer was effective in reducing the carrier lifetime in the LT-InGaAs. A carrier lifetime as short as 2.14 ps, comparable to that of Be-doped LT-InGaAs was achieved.
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73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
61.72.uj III-V and II-VI semiconductors
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Compressibility of Nb2AsC to 41 GPa

Ravhi S. Kumar, Sandeep Rekhi, A. L. Cornelius, and Michel W. Barsoum

Appl. Phys. Lett. 86, 111904 (2005); http://dx.doi.org/10.1063/1.1884261 (3 pages) | Cited 35 times

Online Publication Date: 7 March 2005

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Room temperature synchrotron x-ray diffraction experiments were performed on the layered hexagonal ternary carbide Nb2AsC in a diamond anvil cell to a pressure of 41 GPa. The structure is stable with no phase transitions observed in this pressure range. The bulk modulus is 224±2 GPa, with a pressure derivative of 4; the former is the highest bulk modulus for a Mn+1AXn (MAX) phase, including Ti3SiC2, measured to date. Nb2AsC is also the first MAX phase for which the compressibility along the a direction is higher than along the c direction; in other words, the c/a ratio increases strongly with applied pressure.
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81.40.Lm Deformation, plasticity, and creep
81.40.Vw Pressure treatment
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.50.-p High-pressure effects in solids and liquids
62.20.F- Deformation and plasticity
62.20.D- Elasticity

Vertical electronic coupling between InAs/InP quantum-dot layers emitting in the near-infrared range

P. Miska, J. Even, C. Paranthoen, O. Dehaese, A. Jbeli, M. Senès, and X. Marie

Appl. Phys. Lett. 86, 111905 (2005); http://dx.doi.org/10.1063/1.1865332 (3 pages) | Cited 20 times

Online Publication Date: 7 March 2005

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Stacked InAs quantum dots (QDs) grown on InP(113)B are analyzed both experimentally and theoretically in order to study the influence of the electronic vertical coupling between the QD layers. Improved growth conditions enable us to control the optimum QD height of the samples, thus yielding an emission wavelength of our nanostructures at about 1.55 μm at room temperature. Three samples containing three QD layers with different vertical spacing are studied. The QD electronic structure is studied by continuous-wave photoluminescence and time-resolved photoluminescence experiments at low temperature. A simplified theoretical model is developed, yielding results consistent with experimental data. This analysis evidences the electronic coupling between the QD layers.
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73.21.La Quantum dots
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
78.47.-p Spectroscopy of solid state dynamics

Influence of trapping on the exciton dynamics of AlxGa1−xAs films

A. Amo, M. D. Martin, Ł. Kłopotowski, L. Viña, A. I. Toropov, and K. S. Zhuravlev

Appl. Phys. Lett. 86, 111906 (2005); http://dx.doi.org/10.1063/1.1885173 (3 pages) | Cited 4 times

Online Publication Date: 8 March 2005

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We present a systematic study on the exciton relaxation in high-purity AlGaAs epilayers. The time for the excitonic photoluminescence to reach its maximum intensity, defined as tmax, shows a nonmonotonic dependence on excitation density which is attributed to a competition between exciton localization and carrier–carrier scattering. A phenomenological four level model fully describes the influence of exciton localization on tmax. This localization effect is enhanced by the increase of the Al content in the alloy and disappears when localization is hindered by rising the lattice temperature above the exciton trapping energy.
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71.35.Aa Frenkel excitons and self-trapped excitons
78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors

Stability of tris(8-hydroxyquinoline)-aluminum(III) films investigated by vacuum ultraviolet spectroscopic ellipsometry

C. Himcinschi, O. Gordan, G. Salvan, F. Müller, D. R.T. Zahn, C. Cobet, N. Esser, and W. Braun

Appl. Phys. Lett. 86, 111907 (2005); http://dx.doi.org/10.1063/1.1883314 (3 pages) | Cited 4 times

Online Publication Date: 8 March 2005

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The optical constants of tris(8-hydroxyquinoline)-aluminum(III) (Alq3) thin films were determined in the vacuum ultraviolet range up to 9.5 eV by in situ spectroscopic ellipsometry measurements performed using synchrotron radiation. The exposure to atmosphere of the Alq3 films grown by organic molecular-beam deposition induces changes in ellipsometric spectra that are interpreted in terms of surface morphology changes. Alq3 films deposited by organic vapor phase deposition were found to be more stable upon exposure to atmosphere. Employing time-dependent density functional theory calculations, the features of the extinction coefficient were assigned to singlet-singlet transitions.
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81.05.Hd Other semiconductors
78.66.Li Other semiconductors
78.40.Me Organic compounds and polymers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
81.65.Cf Surface cleaning, etching, patterning
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Mechanical strain and defect distributions in GaAs-based diode lasers monitored during operation

Tran Quoc Tien, Jens W. Tomm, Myriam Oudart, and Julien Nagle

Appl. Phys. Lett. 86, 111908 (2005); http://dx.doi.org/10.1063/1.1883716 (3 pages) | Cited 6 times

Online Publication Date: 8 March 2005

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We monitor the mechanical strain and the defect concentration in AlGaAs–GaAs-based high-power diode laser arrays. This allows studying the interplay between these extrinsic parameters in dependence on device operation. There are two parameters, which contribute to the spread of the mechanical strain, the local position at the device, and, the device operation time that substantially enhances the strain. For midgap levels as well as shallower defect levels, which are due to physically different defects, very different creation scenarios are observed. The concentration of shallow defects and band-tail states is strongly correlated with compressive strain in their vicinity, no matter how the strain is created. For midgap levels, there is no direct correlation; however, an increase by a factor of 3 after 1500 h of operation time is observed. The knowledge on defect creation scenarios is extensible to other GaAs-based devices.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
71.55.Eq III-V semiconductors

Macroscopic energy transport in ZnO monitored by spatiotemporally resolved luminescence

Heiko Priller, Manuel Decker, Robert Hauschild, Heinz Kalt, and Claus Klingshirn

Appl. Phys. Lett. 86, 111909 (2005); http://dx.doi.org/10.1063/1.1882746 (3 pages) | Cited 11 times

Online Publication Date: 9 March 2005

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We report on an experimental study of macroscopic energy transfer in ZnO bulk crystals. We observe the ultraviolet photoluminescence (PL) emission from the near band edge (3.4 eV at room temperature), a green emission band from a deep center transition, and an orange emission band. Unusually, the orange PL is not only visible at the excitation spot and at crystal edges, but we also observe a slow spatial expansion of the light emission in the orange band up to a distance of several millimeters. In contrast to that, the green and ultraviolet emission originate only from the excitation spot or are scattered from the crystal edges. We investigate the temporal dynamics of the orange PL as a function of the distance from the laser spot, by turning on and off the laser excitation. We describe the results with a two-dimensional diffusion model and discuss some possible mechanisms that may cause this energy transfer, such as Förster/Dexter transfer or a thermally induced hopping process.
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78.55.Et II-VI semiconductors
61.82.Fk Semiconductors
79.20.Ds Laser-beam impact phenomena
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Surfactant-mediated epitaxy of Ge on Si(111): Beyond the surface

Th. Schmidt, R. Kröger, T. Clausen, J. Falta, A. Janzen, M. Kammler, P. Kury, P. Zahl, and M. Horn-von Hoegen

Appl. Phys. Lett. 86, 111910 (2005); http://dx.doi.org/10.1063/1.1882760 (3 pages) | Cited 11 times

Online Publication Date: 9 March 2005

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For a characterization of interface and “bulk” properties of Ge films grown on Si(111) by Sb surfactant-mediated epitaxy, grazing incidence x-ray diffraction and transmission electron microscopy have been used. The interface roughness, defect structure, and strain state have been investigated in dependence of film thickness and growth temperature. For all growth parameters, atomically smooth interfaces are observed. For thin Ge layers, about 75% of the strain induced by the lattice mismatch is relaxed by misfit dislocations at the Ge/Si interface. Only a slight increase of the degree of relaxation is found for thicker films. At growth temperatures below about 600 °C, the formation of twins is observed, which can be avoided at higher temperatures.
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81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Ct Interface structure and roughness
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.37.Lp Transmission electron microscopy (TEM)
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.60.Bs Mechanical and acoustical properties

X-ray absorption near-edge fine structure study of AlInN semiconductors

Qixin Guo, Jian Ding, Tooru Tanaka, Mitsuhiro Nishio, and Hiroshi Ogawa

Appl. Phys. Lett. 86, 111911 (2005); http://dx.doi.org/10.1063/1.1886914 (3 pages) | Cited 8 times

Online Publication Date: 9 March 2005

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We have carried out the x-ray absorption near-edge fine structure (XANES) measurements of AlInN at Al K edge and the self-consistent-field real-space multiple-scattering theory calculations. It was demonstrated that the Al K-edge XANES spectra of AlInN are the fingerprints of their composition. The theoretical results could give a reasonable reproduction of the experimental spectral structures. This type of combined use of the experimental XANES and the theoretical calculations must be a powerful tool for systematic and qualitative analysis of the structural and electronic structures of nitride semiconductors.
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78.70.Dm X-ray absorption spectra
68.55.Nq Composition and phase identification

Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers

Dmitri O. Klenov, Daniel C. Driscoll, Arthur C. Gossard, and Susanne Stemmer

Appl. Phys. Lett. 86, 111912 (2005); http://dx.doi.org/10.1063/1.1885172 (3 pages) | Cited 17 times

Online Publication Date: 10 March 2005

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We use high-angle annular dark-field imaging in scanning transmission electron microscopy to investigate the crystal structure and particle morphology of semimetallic ErAs nanoparticles embedded in epitaxial In0.53Ga0.47As layers. Deposition of increasing amounts of Er results in a higher density of particles and particles coalescence for high amounts. Despite overlap with the matrix through the thickness of the sample used for transmission electron microscopy, the crystal structure of ErAs particles is unambiguously identified as rock salt. The As sublattice is continuous across the interface between the particle and the zinc-blende semiconductor.
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68.35.Ct Interface structure and roughness
68.55.-a Thin film structure and morphology
61.46.-w Structure of nanoscale materials
68.37.Lp Transmission electron microscopy (TEM)

Single-crystal Ti2AlN thin films

T. Joelsson, A. Hörling, J. Birch, and L. Hultman

Appl. Phys. Lett. 86, 111913 (2005); http://dx.doi.org/10.1063/1.1882752 (3 pages) | Cited 28 times

Online Publication Date: 10 March 2005

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We have produced pure thin-film single-crystal Ti2AlN(0001), a member of the Mn+1AXn class of materials. The method used was UHV dc reactive magnetron sputtering from a 2Ti:Al compound target in a mixed Ar–N2 discharge onto (111) oriented MgO substrates. X-ray diffraction and transmission electron microscopy were used to establish the hexagonal crystal structure with c and a lattice parameters of 13.6 and 3.07 Å, respectively. The hardness H, and elastic modulus E, as determined by nanoindentation measurements, were found to be 16.1±1 GPa and 270±20 GPa, respectively. A room-temperature resistivity for the films of 39 μΩ cm was obtained.
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68.60.Bs Mechanical and acoustical properties
68.55.A- Nucleation and growth
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Jj Elasticity and anelasticity, stress-strain relations
73.61.Ey III-V semiconductors
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
62.20.Qp Friction, tribology, and hardness
62.20.D- Elasticity
68.35.Gy Mechanical properties; surface strains
68.37.Lp Transmission electron microscopy (TEM)

Enhanced Raman scattering for temperature measurement of a laser-heated atomic force microscope tip

Brendan McCarthy, Yanming Zhao, Ranjan Grover, and Dror Sarid

Appl. Phys. Lett. 86, 111914 (2005); http://dx.doi.org/10.1063/1.1885178 (3 pages) | Cited 13 times

Online Publication Date: 10 March 2005

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Illuminating a silicon cantilever of an atomic force microscope with a focused laser beam creates heat that can be funneled into a nanoscale area at the apex of its tip. To characterize the heating dynamics and measure the temperature of the tip, a Raman scattering pump-and-probe method is used. It is found that at the apex of the tip the intensity of the Raman Stokes and anti-Stokes components are significantly enhanced relative to those obtained on a bulk silicon sample. Modeling the temperature rise at the tip of the cantilever by a closed-form analytical expression gives good agreement with the Raman measurements. This model can be used to design the structure of the cantilever so that the heat delivery to its tip is optimized. Such an optimized cantilever can potentially be used in high-density, heat-assisted magnetic recording, optical data storage using phase-change media and thermomechanical recording systems, for example, where nanoscale heated regions are of importance.
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07.20.Dt Thermometers
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
61.82.Fk Semiconductors
07.79.Lh Atomic force microscopes
81.40.Gh Other heat and thermomechanical treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.30.Am Elemental semiconductors and insulators

Using local band structure to image strain in semiconductor microstructures

T. H. Stievater, W. S. Rabinovich, D. Park, Peter G. Goetz, J. B. Boos, D. S. Katzer, and M. L. Biermann

Appl. Phys. Lett. 86, 111915 (2005); http://dx.doi.org/10.1063/1.1885181 (3 pages)

Online Publication Date: 10 March 2005

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We demonstrate that polarization-specific nonlinear optical spectroscopy combined with an accurate band structure model can be used to provide a noncontact image of the strain fields within a micromachined quantum well. Optical measurements of the heavy hole excitonic transition strength and anisotropy are converted into measurements of the in-plane strain components with an 8-band k∙p model that includes deformation potentials. The resulting two-dimensional strain image is in excellent agreement with a finite-element structural model of the microstructure, demonstrating the validity of this technique.
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73.21.Fg Quantum wells
81.07.St Quantum wells
68.65.Fg Quantum wells
81.40.Jj Elasticity and anelasticity, stress-strain relations
73.20.At Surface states, band structure, electron density of states
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.15.Pd Molecular dynamics calculations (Car-Parrinello) and other numerical simulations
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Triplet exciton interactions in solid films of an electrophosphorescent Pt (II) porphyrin

J. Mężyk, J. Kalinowski, F. Meinardi, and R. Tubino

Appl. Phys. Lett. 86, 111916 (2005); http://dx.doi.org/10.1063/1.1885179 (3 pages) | Cited 14 times

Online Publication Date: 11 March 2005

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We demonstrate the phosphorescence (PH) from neat Pt (II) porphyrin (PtOEP) films to be quenched by bimolecular reactions of monomeric (M) and dimeric (D) triplet (T) excitons. Their respective rate constants, γTT(M) ≅ 8×10−12 cm3/s and γTT(D) ≅ 8×10−15 cm3/s, were found from the kinetics fits to the excitation intensity dependence of the relative PH yield. The exciton decay becomes dominated by mutual annihilation above a critical concentrations of TMcrit ≅ 6.3×1017 cm−3 for M, and TDcrit ≅ 1.2×1019 cm−3 for D triplet excited states. These data allow us to exclude T–T annihilation as the nonradiative pathway quenching the emission from guest aggregates in PtOEP-doped emitters, and predict the onset of the current roll-off in electrophosphorescence efficiency at a current that exceeds four orders of magnitude the values observed experimentally with light-emitting-diodes based on thin PtOEP-doped emitting layers.
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78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
78.60.Fi Electroluminescence
71.35.-y Excitons and related phenomena

Defect reduction in (1math00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy

B. A. Haskell, T. J. Baker, M. B. McLaurin, F. Wu, P. T. Fini, S. P. DenBaars, J. S. Speck, and Shuji Nakamura

Appl. Phys. Lett. 86, 111917 (2005); http://dx.doi.org/10.1063/1.1866225 (3 pages) | Cited 51 times

Online Publication Date: 11 March 2005

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This letter reports on extended defect density reduction in m-plane (1math00) GaN films achieved via lateral epitaxial overgrowth (LEO) by hydride vapor phase epitaxy. Several dielectric mask patterns were used to produce 10 to 100 μm-thick, partially and fully coalesced nonpolar GaN films. X-ray rocking curves indicated the films were free of wing tilt. Transmission electron microscopy showed that basal plane stacking fault (SF) and threading dislocation (TD) densities decreased from 105 cm−1 and 109 cm−2, respectively, less than 3×103 cm−1 and ∼ 5×106 cm−2, respectively, in the Ga-face (0001) wing of the LEO films. SFs persisted in 〈0001〉-oriented stripe LEO films, though TD reduction was observed in the windows and wings. Band-edge cathodoluminescence intensity increased 2 to 5 times in the wings compared to the windows depending on the stripe orientation. SFs in the low TD density wings of 〈0001〉-stripe films did not appear to act as nonradiative recombination centers.
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81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
61.72.Nn Stacking faults and other planar or extended defects
68.55.-a Thin film structure and morphology
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Fd III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.37.Lp Transmission electron microscopy (TEM)

Elastic constants and magnetic anisotropy of Co/Pt superlattice thin films

Nobutomo Nakamura, Hirotsugu Ogi, Masahiko Hirao, and Teruo Ono

Appl. Phys. Lett. 86, 111918 (2005); http://dx.doi.org/10.1063/1.1886900 (3 pages) | Cited 3 times

Online Publication Date: 11 March 2005

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This study is devoted to a correlation between elastic constants and magnetic anisotropy of Co/Pt superlattice thin films. Co/Pt superlattice thin films with various Co–Pt layer wavelengths were deposited on monocrystal silicon substrates by an ultrahigh-vacuum-evaporation method, keeping the volume fractions of the Co and Pt layers unchanged. Their perpendicular magnetic anisotropy ranged between −0.2 and 5.0 MJ/m3. Resonant-ultrasound spectroscopy coupled with laser-Doppler interferometry determined their hexagonal-symmetry elastic constants, which correlate with the magnetic anisotropy; higher perpendicular magnetic anisotropy causes larger in-plane elastic moduli and smaller out-of-plane moduli. The correlation is explained by internal elastic strain associated with lattice misfit at the Co–Pt interfaces.
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75.50.Cc Other ferromagnetic metals and alloys
81.05.Bx Metals, semimetals, and alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.60.Bs Mechanical and acoustical properties
75.30.Gw Magnetic anisotropy
62.20.D- Elasticity
75.70.Ak Magnetic properties of monolayers and thin films
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.35.Gy Mechanical properties; surface strains
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