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21 Mar 2005

Volume 86, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 123102 (2005); http://dx.doi.org/10.1063/1.1885187 (3 pages)

Jong H. Na, Robert A. Taylor, James H. Rice, James W. Robinson, Kwan H. Lee, Young S. Park, Chang M. Park, and Tae W. Kang
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Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices

Zhenlin Rang, Marshall I. Nathan, P. Paul Ruden, Vitaly Podzorov, Michael E. Gershenson, Christopher R. Newman, and C. Daniel Frisbie

Appl. Phys. Lett. 86, 123501 (2005); http://dx.doi.org/10.1063/1.1875761 (3 pages) | Cited 15 times

Online Publication Date: 14 March 2005

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Hydrostatic pressure was applied to single-crystal rubrene photoconductors and p channel field-effect transistors. Under illumination from a GaInN light-emitting diode, we observed linear increases in photoconductivity, by up to a factor of 2.1 at 0.43 GPa. We also measured increases in the drain current of the single-crystal rubrene organic field-effect transistors (OFETs) with increasing pressure up to 0.52 GPa. Analyzing the transfer characteristics of the OFETs, we extracted the pressure dependence of the field-effect hole mobility. The different OFETs examined showed similar hole mobility increase ratios with pressure, although their atmospheric pressure mobilities varied by more than a factor of two. Threshold voltages shifts with pressure were small. All results were reversible, i.e., the measured currents returned to their atmospheric pressure values upon release of pressure unless complete device failure occurred at the highest pressure.
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85.30.Tv Field effect devices
72.40.+w Photoconduction and photovoltaic effects
72.20.Fr Low-field transport and mobility; piezoresistance
62.50.-p High-pressure effects in solids and liquids

Temperature effect on carrier transport characteristics in SrTiO3−δ /Si p-n heterojunction

Haizhong Guo, Yanhong Huang, Kuijuan Jin, Qingli Zhou, Huibin Lu, Lifeng Liu, Yueliang Zhou, Bolin Cheng, and Zhenghao Chen

Appl. Phys. Lett. 86, 123502 (2005); http://dx.doi.org/10.1063/1.1888039 (3 pages) | Cited 11 times

Online Publication Date: 14 March 2005

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A p-n junction has been fabricated by depositing an electron-doped (n-) SrTiO3−δ film on a hole-doped (p-) Si substrate with a two atomic-layers thickness epitaxial SrO buffer layer using laser molecular beam epitaxy technique. Good crystallinity and smooth surface of SrTiO3−δ were confirmed by reflection high-energy electron diffraction and x-ray diffraction. The junction shows good rectifying behavior at room temperature, and strong temperature dependence of current-voltage (I-V) properties in the range of 200–300 K. These results present potential applications in future microelectronic devices based on growing perovskite oxide thin films on conventional semiconductors.
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81.05.Cy Elemental semiconductors
81.05.Hd Other semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Ei Rectification
68.55.-a Thin film structure and morphology
68.35.Ct Interface structure and roughness
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Fg Pulsed laser ablation deposition

Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN/GaN high-electron-mobility transistors on 4 in. diameter silicon

S. Arulkumaran, T. Egawa, S. Matsui, and H. Ishikawa

Appl. Phys. Lett. 86, 123503 (2005); http://dx.doi.org/10.1063/1.1879091 (3 pages) | Cited 22 times

Online Publication Date: 15 March 2005

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Enhancement of breakdown voltage (BV) with the increase of AlN buffer layer thickness was observed in AlGaN/GaN high-electron-mobility transistors (HEMTs) grown by metalorganic chemical vapor deposition on 4 in. Si. The enhancement of device performance with AlN buffer thickness (200 and 300 nm) is due to the reduction of electrically active defects from Si substrate. The reduction of defects from Si with the increase of AlN thickness was confirmed by x-ray rocking curve measurements. Not much change has been observed in ON-state BV (BV:ON) values except in devices with 500‐nm-thick buffer layer. About 46% enhancement in OFF-state BV (BV:OFF) was observed on 200 μm wide HEMTs with 300 nm thick AlN buffer layer when compared to HEMTs with 8 nm thick AlN buffer layer. The location of junction breakdown in the device was identified as GaN/AlN/Si interface. The measured specific on-resistance (Ron) values for 200 and 400 μm wide HEMTs with 300 nm thick buffer layers were 0.28 and 0.33 mΩ cm2, respectively. About an order of low Ron was observed when compared with the reported values. The AlGaN/GaN HEMTs on 4 in. Si with thicker AlN buffer layers are suitable for high-power applications.
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85.30.Tv Field effect devices
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Solid-state electrochromic devices based on poly (phenylene vinylene) polymers

A. L. Holt, J. M. Leger, and S. A. Carter

Appl. Phys. Lett. 86, 123504 (2005); http://dx.doi.org/10.1063/1.1883321 (3 pages) | Cited 8 times

Online Publication Date: 15 March 2005

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We present a solid state electrochromic device based on poly (phenylene vinylene) light-emitting polymers and explore device performance as a function of salt type, salt concentration, and polymer layer thickness. Salts employing organic anions display improved optical contrasts. Higher salt concentrations and thicker devices produce higher optical contrasts at the cost of slower switching speeds. Devices display high reversibility, dramatic optical contrasts (>40%), and low operating voltages (<2 V) that are comparable to state-of-the-art conducting polymer electrochromic devices.
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85.60.Jb Light-emitting devices
42.79.-e Optical elements, devices, and systems
42.70.Jk Polymers and organics

Transparent thin-film transistors with pentacene channel, AlOx gate, and NiOx electrodes

Jeong-M. Choi, D. K. Hwang, Jae Hoon Kim, and Seongil Im

Appl. Phys. Lett. 86, 123505 (2005); http://dx.doi.org/10.1063/1.1886901 (3 pages) | Cited 18 times

Online Publication Date: 15 March 2005

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We report on the fabrication of pentacene-based transparent thin-film transistors (TTFT) that consist of NiOx, AlOx, and indium-tin-oxide (ITO) for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The NiOx S/D electrodes of which the work function is well matched to that of pentacene were deposited on a 50-nm-thick pentacene channel by thermal evaporation of NiO powder and showed a moderately low but still effective transmittance of ∼ 25% in the visible range along with a good sheet resistance of ∼ 60 Ω/◻. The maximum saturation current of our pentacene-based TTFT was about 15 μA at a gate bias of −40 V showing a high field effect mobility of 0.9 cm2/Vs in the dark, and the on/off current ratio of our TTFT was about 5×105. It is concluded that jointly adopting NiOx for the S/D electrode and AlOx for gate dielectric realizes a high-quality pentacene-based TTFT.
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85.30.Tv Field effect devices
68.55.A- Nucleation and growth
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ph Polymers; organic compounds
73.30.+y Surface double layers, Schottky barriers, and work functions

Effects of nitrogen-incorporated interface layer on the transient characteristics of hafnium oxide n-metal–oxide–semiconductor field-effect transistors

Chang Yong Kang, Se Jong Rhee, Chang Hwan Choi, Chang Seok Kang, Rino Choi, Mohammad S. Akbar, Manhong Zhang, Siddarth A. Krishnan, and Jack C. Lee

Appl. Phys. Lett. 86, 123506 (2005); http://dx.doi.org/10.1063/1.1890479 (3 pages) | Cited 1 time

Online Publication Date: 16 March 2005

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In this letter, we present the effects of the nitrogen-incorporated interface on threshold voltage shift (ΔVth), which was induced by charge trapping and detrapping in hafnium oxide (HfO2) n-metal–oxide–semiconductor field-effect transistors. Under the various gate voltage conditions, the nitrogen-incorporated interface showed a smaller ratio of interface charge density to total charge density (Nit/Ntotal) due to its thinner interface thickness and lower energy band offset. In addition, the degradations of the interface quality and the mobility under the stress condition were less severe for the nitrogen-incorporated interface devices.
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85.30.Tv Field effect devices
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.At Surface states, band structure, electron density of states
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electric-field-induced charge transfer between gold nanoparticle and capping 2-naphthalenethiol and organic memory cells

Jianyong Ouyang, Chih-Wei Chu, Douglas Sieves, and Yang Yang

Appl. Phys. Lett. 86, 123507 (2005); http://dx.doi.org/10.1063/1.1887819 (3 pages) | Cited 80 times

Online Publication Date: 16 March 2005

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An electrical transition, induced by a high electric field, was observed in a device consisting of a polystyrene film containing 2-naphthalenethiol-capped Au nanoparticles sandwiched between two Al electrodes. The current through the device changed from a charge-injection-controlled current to a space-charge-limited current. The latter current is higher than the former by more than three orders of magnitude at 2 V. Asymmetrical current-voltage curve was observed along the two polarity directions for the device after the transition. This transition is attributed to an electric-field-induced charge transfer between the Au nanoparticle and the capping 2-naphthalenethiol. The device exhibits good stability in the high conductivity state, so it can be used as a write-once-read-many times electronic memory.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
84.30.Sk Pulse and digital circuits

Stable ≥ 8% efficient nanocrystalline dye-sensitized solar cell based on an electrolyte of low volatility

Peng Wang, Cédric Klein, Robin Humphry-Baker, Shaik M. Zakeeruddin, and Michael Grätzel

Appl. Phys. Lett. 86, 123508 (2005); http://dx.doi.org/10.1063/1.1887825 (3 pages) | Cited 53 times

Online Publication Date: 16 March 2005

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We demonstrate a ≥ 8% efficient nanocrystalline dye-sensitized solar cell retaining over 98% of its initial performance after 1000 h of accelerated tests subjected to thermal stress at 80 °C in the dark. Device degradation was also negligible following 1000 h of visible light soaking at 60 °C. This high performance and stable device was realized by using a robust electrolyte of low volatility in conjunction with the amphiphilic ruthenium sensitizer [Ru(4,4′-dicarboxylic acid-2,2′-bipyridine)(4,4′-bis(p-hexyloxystyryl)-2,2′-bipyridine)(NCS)2], coded as K-19, which was grafted together with 1-decylphosphonic acid on the mesoporous titania film acting as photoanode.
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84.60.Jt Photoelectric conversion
85.35.-p Nanoelectronic devices

Light intensity dependence of open-circuit voltage of polymer:fullerene solar cells

L. J. A. Koster, V. D. Mihailetchi, R. Ramaker, and P. W. M. Blom

Appl. Phys. Lett. 86, 123509 (2005); http://dx.doi.org/10.1063/1.1889240 (3 pages) | Cited 141 times

Online Publication Date: 17 March 2005

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The open-circuit voltage Voc of polymer:fullerene bulk heterojunction solar cells is investigated as a function of light intensity for different temperatures. Devices consisted of a blend of a poly(p-phenylene vinylene) derivative as the hole conductor and 6,6-phenyl C61-butyric acid methyl ester as the electron conductor. The observed photogenerated current and Voc are at variance with classical p–n junction-based models. The influence of light intensity and recombination strength on Voc is consistently explained by a model based on the notion that the quasi-Fermi levels are constant throughout the device, including both drift and diffusion of charge carriers.
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84.60.Jt Photoelectric conversion
85.60.Bt Optoelectronic device characterization, design, and modeling
84.60.Bk Performance characteristics of energy conversion systems; figure of merit
85.65.+h Molecular electronic devices
72.40.+w Photoconduction and photovoltaic effects

Gate-refreshable nanowire chemical sensors

Zhiyong Fan and Jia G. Lu

Appl. Phys. Lett. 86, 123510 (2005); http://dx.doi.org/10.1063/1.1883715 (3 pages) | Cited 138 times

Online Publication Date: 17 March 2005

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ZnO nanowire field effect transistors were implemented as highly sensitive chemical sensors for detection of NO2 and NH3 at room temperature. Due to a Debye screening length comparable to the nanowire diameter, the electric field applied over the back gate electrode was found to significantly affect the sensitivity as it modulates the carrier concentration. A strong negative field was utilized to refresh the sensors by an electrodesorption mechanism. In addition, different chemisorbed species could be distinguished from the “refresh” threshold voltage and the temporal response of the conductance. These results demonstrated a refreshable field effect sensor with a potential gas identification function.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
68.43.Mn Adsorption kinetics
73.63.Bd Nanocrystalline materials

Emission behavior of nm-thick Al2O3 film-based planar cold cathodes for electronic cooling

Myoung-Bok Lee, Sung-Ho Hahm, Jung-Hee Lee, and Yoon-Ho Song

Appl. Phys. Lett. 86, 123511 (2005); http://dx.doi.org/10.1063/1.1894593 (3 pages)

Online Publication Date: 17 March 2005

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We have fabricated and investigated the emission characteristics of planar cold cathodes which are appropriate for the electronic cooling devices by atomically depositing ultrathin Al2O3 films onto the indium-tin-oxide-coated glass. A diode-type test indicated prominent emission behaviors, such as a low threshold field of 3–5 V/μm for planar cold cathodes and the nonuniform luminescence intensity with localized distribution of emission spots. We propose a resonant Fowler–Nordheim tunneling of electrons transported via the Frenkel traps with a well depth of ϕB = 0.8–0.9 eV in nm-thick Al2O3 films as a key process for the extraordinary emission properties of Al2O3 film-based planar cold cathodes.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Gk Tunneling
78.66.Nk Insulators
73.61.Ng Insulators
78.55.Hx Other solid inorganic materials
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors

Meishoku Masahara, Yongxun Liu, Kenichi Ishii, Kunihiro Sakamoto, Takashi Matsukawa, Hisao Tanoue, Seigo Kanemaru, and Eiichi Suzuki

Appl. Phys. Lett. 86, 123512 (2005); http://dx.doi.org/10.1063/1.1891289 (3 pages) | Cited 4 times

Online Publication Date: 18 March 2005

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For gate work function engineering required for ultrathin channel (UTC) double-gate (DG) metal-oxide-semiconductor field-effect-transistor (MOSFET), threshold voltage (Vth) tuning of self-aligned asymmetric (n+–p+) DG MOSFETs have been experimentally investigated in comparison with symmetric (n+–n+) DG MOSFETs. The vertical UTCs (12–32 nm) were fabricated on bulk Si substrates by utilizing the novel ion-bombardment-retarded wet etching and the self-aligned asymmetric DGs were formed by employing the tilted ion implantation and anisotropic dry etching. The fabricated vertical asymmetric DG n-MOSFET with the gate length of 100 nm clearly exhibits the desirable Vth of +0.1 V, in addition to the unique DG MOSFET characteristics of the high short-channel-effect immunity with decreasing a channel thickness.
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85.30.Tv Field effect devices
81.65.Cf Surface cleaning, etching, patterning
61.72.uf Ge and Si
85.40.Ry Impurity doping, diffusion and ion implantation technology

Semiconductive metal oxide ferroelectric memory transistor: A long-retention nonvolatile memory transistor

Tingkai Li, Sheng Teng Hsu, Bruce D. Ulrich, and David R. Evans

Appl. Phys. Lett. 86, 123513 (2005); http://dx.doi.org/10.1063/1.1886252 (3 pages) | Cited 8 times

Online Publication Date: 18 March 2005

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The retention problem is a technical challenge for one-transistor (1T) ferroelectric memory devices. Three possible mechanisms are responsible for the poor retention of one-transistor ferroelectric memories: namely, charges trapping within the gate oxide and ferroelectric film, floating gate effect, and the depolarization field. In order to overcome these problems, a novel ferroelectric transistor design using a semiconductive oxide film in place of the gate dielectric has been fabricated. There is no insulator, other than the ferroelectric thin film in the gate stack; therefore, there is a very low depolarization field. The bottom gate of the ferroelectric capacitor is electrically connected to the silicon substrate through the semiconductive metal oxide resulting in the improvement of the memory retention characteristics.
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85.50.Gk Non-volatile ferroelectric memories
77.22.Ej Polarization and depolarization
77.55.-g Dielectric thin films
85.30.Tv Field effect devices
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