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21 Mar 2005

Volume 86, Issue 12, Articles (12xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 123102 (2005); http://dx.doi.org/10.1063/1.1885187 (3 pages)

Jong H. Na, Robert A. Taylor, James H. Rice, James W. Robinson, Kwan H. Lee, Young S. Park, Chang M. Park, and Tae W. Kang
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Anisotropic Mg incorporation in GaN growth on nonplanar templates

Dawei Ren and P. Daniel Dapkus

Appl. Phys. Lett. 86, 121901 (2005); http://dx.doi.org/10.1063/1.1870121 (3 pages) | Cited 8 times

Online Publication Date: 14 March 2005

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Anisotropic Mg incorporation has been observed in the growth of p-type GaN on nonplanar GaN templates. As shown by cross-sectional scanning electron microscopy and cathodoluminescence spectroscopy, Mg-doped GaN grown on (0001) mesa tops is observed to have higher Mg concentration than the counterpart layers grown on {11math2} sidewalls. The origin of this anisotropic Mg incorporation is believed to be associated with local surface structure on the different surface facets. More importantly, this unique structure of Mg-doped GaN provides a natural lateral current confinement that paves a promising path to fabrication of InGaN∕GaN buried heterostructure lasers on these nonplanar templates.
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81.05.Ea III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.A- Nucleation and growth
61.72.uj III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
61.72.S- Impurities in crystals
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.60.Hk Cathodoluminescence, ionoluminescence
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Local environment of Mn dopant in ZnO by near-edge x-ray absorption fine structure analysis

Masahiro Kunisu, Fumiyasu Oba, Hidekazu Ikeno, Isao Tanaka, and Tomoyuki Yamamoto

Appl. Phys. Lett. 86, 121902 (2005); http://dx.doi.org/10.1063/1.1885175 (3 pages) | Cited 25 times

Online Publication Date: 14 March 2005

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High-resolution near-edge x-ray absorption fine structure (NEXAFS) at Mn K edge is employed to probe the local environment of Mn dopant in ZnO. First-principles supercell calculations are systematically made to obtain theoretical NEXAFS. Mn is found to substitute for Zn up to 5 at.%Mn in polycrystalline samples sintered at 1623 K in air. Presence of Mn3O4 is apparent for samples with higher Mn content. The NEXAFS does not change in the range of Mn concentration from 0.01 to 5 at. %, indicating the absence of Mn precipitates. The results are confirmed by examining the polarization dependence of the NEXAFS for a 5 at. %-doped ZnO thin film.
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75.50.Pp Magnetic semiconductors
61.72.S- Impurities in crystals
81.05.Dz II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.70.Dm X-ray absorption spectra
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation

Solid-state dewetting for ordered arrays of crystallographically oriented metal particles

Amanda L. Giermann and Carl V. Thompson

Appl. Phys. Lett. 86, 121903 (2005); http://dx.doi.org/10.1063/1.1885180 (3 pages) | Cited 57 times

Online Publication Date: 14 March 2005

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We demonstrate that topographically modified substrates can be used as templates to control solid-state dewetting of thin films by creating a periodic variation in the initial curvature of the film. The dewetting of gold films on oxidized silicon surfaces patterned with arrays of inverted pyramid shaped pits is investigated. For specific ranges of relative film thickness and topographic dimension, dewetting results in arrays of submicrometer-scale particles with uniform periodic spacing and nearly uniform size and crystallographic orientation.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology

Revealing hidden pore structure in nanoporous thin films using positronium annihilation lifetime spectroscopy

Hua-Gen Peng, William E. Frieze, Richard S. Vallery, David W. Gidley, Darren L. Moore, and Richard J. Carter

Appl. Phys. Lett. 86, 121904 (2005); http://dx.doi.org/10.1063/1.1886905 (3 pages) | Cited 7 times

Online Publication Date: 14 March 2005

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The highly inhomogeneous pore morphology of a plasma-enhanced-chemical-vapor-deposited ultralow-k dielectric film (k = 2.2) has been revealed using depth-profiled positronium annihilation lifetime spectroscopy (PALS) combined with progressive etch back of the film surface. The film is found to have a dense surface layer, an intermediate layer of 1.8 nm diameter mesopores, and a deep region of ∼ 3 nm diameter mesopores. After successively etching of the sealing layer and the isolated 1.8 nm pore region, PALS reveals that the underlying large pores are highly interconnected. This inhomogeneous pore structure is proposed to account for observed difficulties in film integration.
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81.05.Rm Porous materials; granular materials
81.07.Bc Nanocrystalline materials
77.84.Jd Polymers; organic compounds
61.43.Gt Powders, porous materials
77.55.-g Dielectric thin films
61.46.-w Structure of nanoscale materials
81.65.Cf Surface cleaning, etching, patterning
78.70.Bj Positron annihilation
78.66.Nk Insulators
68.55.-a Thin film structure and morphology

Fluorine segregation and incorporation during solid-phase epitaxy of Si

S. Mirabella, G. Impellizzeri, E. Bruno, L. Romano, M. G. Grimaldi, F. Priolo, E. Napolitani, and A. Carnera

Appl. Phys. Lett. 86, 121905 (2005); http://dx.doi.org/10.1063/1.1886907 (3 pages) | Cited 16 times

Online Publication Date: 14 March 2005

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We report on the F incorporation into Si during solid-phase epitaxy (SPE) at 580 °C and with the presence of B and∕or As, clarifying the F incorporation mechanism into Si. A strong segregation of F at the moving amorphous–crystalline interface has been characterized, leading to a SPE rate retardation and to a significant loss of F atoms through the surface. In B- or As-doped samples, an enhanced, local F incorporation is observed, whereas in the case of B and As co-implantation (leading to compensating dopant effect), a much lower F incorporation is achieved at the dopant peak. The F enhanced incorporation with the presence of B or As is shown to be a kinetic effect related to the SPE rate modification by doping, whereas the hypothesis of a F–B or F–As chemical bonding is refused. These results shed new light on the application of F in the fabrication of ultrashallow junctions in future generation devices.
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81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth
68.35.Dv Composition, segregation; defects and impurities
81.15.Np Solid phase epitaxy; growth from solid phases
61.72.uf Ge and Si
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.S- Impurities in crystals

Refractive indices of ZnSiN2 on r-plane sapphire

B. P. Cook, H. O. Everitt, I. Avrutsky, A. Osinsky, A. Cai, and J. F. Muth

Appl. Phys. Lett. 86, 121906 (2005); http://dx.doi.org/10.1063/1.1865325 (3 pages) | Cited 3 times

Online Publication Date: 14 March 2005

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II–IV–N2 wide band gap semiconductors such as ZnSiN2, ZnGeN2, and ZnSiGeN2 have potential uses for nonlinear materials and as lattice matching compounds for the growth of SiC and GaN devices. In this study, the dispersion of the TE and TM indices of refraction has been measured systematically using the prism coupling technique for an orthorhombic ZnSiN2 epitaxial layer grown on r-plane sapphire. The resulting index dispersion is extracted from the measured optical modes using a layered biaxial waveguide analysis, which shows that although the ZnSiN2 crystal is orthorhombic, for practical purposes it can be treated as a uniaxial material.
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68.55.-a Thin film structure and morphology
78.66.Li Other semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors

Oxidation kinetics of ion-amorphized (0001) 6H–SiC: Competition between oxidation and recrystallization processes

A. Poggi, A. Parisini, R. Nipoti, and S. Solmi

Appl. Phys. Lett. 86, 121907 (2005); http://dx.doi.org/10.1063/1.1887820 (3 pages) | Cited 5 times

Online Publication Date: 15 March 2005

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The wet oxidation of (0001) Si face 6H–SiC preamorphized by Ar+ implantation has been investigated in the temperature range between 750 and 950 °C. Electron microscopy analysis has been performed to obtain information on the evolution of the amorphous layer during the oxidation process. The oxidation rate of the amorphous substrate is linear in time and assumes the value VOx(α) = 3.8×107 exp(−1.6/kT) nm/min. Due to the concomitant oxidation and recrystallization processes occurring at the two opposite faces of the amorphous layer, this expression is valid up to about 910 °C for amorphous layer thickness of a few hundreds nanometer and processing time of a few tens of minutes. At higher temperatures, our oxidation data support the existence of a sudden increasing of the recrystallization that strongly reduces the time of surviving of the amorphous region and, consequently, the oxide thickness. The procedure to determine, for any fixed amorphous thickness, the most suitable experimental conditions giving rise to the maximum oxide thickness (i.e., the temperature at which corresponds the shortest oxidation time), preserving at the same time the flatness of the oxidized surface, is reported.
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81.05.Gc Amorphous semiconductors
81.65.Mq Oxidation
61.72.up Other materials
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.43.Dq Amorphous semiconductors, metals, and alloys
68.37.Lp Transmission electron microscopy (TEM)

Identification of vacancies in the ordered intermetallic compound B2–Ru46Al54

E. Partyka, W. Sprengel, H. Weigand, H.-E. Schaefer, F. Krogh, and G. Kostorz

Appl. Phys. Lett. 86, 121908 (2005); http://dx.doi.org/10.1063/1.1885176 (3 pages) | Cited 2 times

Online Publication Date: 16 March 2005

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For the identification of vacant lattice sites in the high-temperature intermetallic compound Ru46Al54, positron lifetime measurements as well as coincident measurements of the two Doppler-broadened positron-electron annihilation photons have been employed. These data demonstrate that thermal vacancies are formed on the Ru metal sublattice similar to FeAl and NiAl where the thermal vacancies are also formed on the transition metal sublattice.
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61.72.J- Point defects and defect clusters
78.70.Bj Positron annihilation
61.80.Fe Electron and positron radiation effects
61.82.Bg Metals and alloys

Thermal decomposition of sputtered thin PtOx layers used in super-resolution optical disks

A. V. Kolobov, F. Wilhelm, A. Rogalev, T. Shima, and J. Tominaga

Appl. Phys. Lett. 86, 121909 (2005); http://dx.doi.org/10.1063/1.1886255 (3 pages) | Cited 2 times

Online Publication Date: 16 March 2005

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Decomposition of sputtered PtOx layers has been studied by x-ray absorption spectroscopy. X-ray absorption fine structure measurements demonstrated that as-deposited films possess a composition of PtOx (x = 1.1–1.7). Upon annealing, the metallic platinum phase is formed. The formation of the metallic Pt phase starts at very early stages of the decomposition process. The decomposition is not monotonic and slows down at the final stage. The structure at intermediate stages of decomposition is a mixture of the starting phase and metallic Pt.
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68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
78.70.Dm X-ray absorption spectra
68.55.Nq Composition and phase identification
81.40.Gh Other heat and thermomechanical treatments
42.79.Vb Optical storage systems, optical disks

Effect of growth temperature and post-growth thermal annealing on carrier localization and deep level emissions in GaNAs/GaAs quantum well structures

Q. X. Zhao, S. M. Wang, Y. Q. Wei, M. Sadeghi, A. Larsson, and M. Willander

Appl. Phys. Lett. 86, 121910 (2005); http://dx.doi.org/10.1063/1.1891271 (3 pages) | Cited 4 times

Online Publication Date: 16 March 2005

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We report results from investigation of the optical properties of GaNAs/GaAs quantum well structures. The structures were grown by molecular-beam epitaxy at different temperatures, and subsequently postgrowth thermal treatments at different temperature were performed. The results show that the carrier localization is smaller in a structure grown at a temperature of 580 °C in comparison with a structure grown at 450 °C. Both structures also show a broaden deep level emission band. Furthermore, the deep level emission band and the carrier localization effect can be removed by thermal annealing at 650 °C in the structure grown at 450 °C. The structure quality and radiative recombination efficiency are significantly improved after annealing. However, annealing under the same condition has a negligible effect on the structure grown at 580 °C.
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81.07.St Quantum wells
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.21.Fg Quantum wells
78.67.De Quantum wells
61.72.Cc Kinetics of defect formation and annealing
78.55.Cr III-V semiconductors
73.20.Fz Weak or Anderson localization
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
68.65.Fg Quantum wells
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.63.Hs Quantum wells

Short-pulse-laser-induced optical damage and fracto-emission of amorphous, diamond-like carbon films

Klaus Sokolowski-Tinten, Wolfgang Ziegler, Dietrich von der Linde, Michael P. Siegal, and D. L. Overmyer

Appl. Phys. Lett. 86, 121911 (2005); http://dx.doi.org/10.1063/1.1888037 (3 pages) | Cited 2 times

Online Publication Date: 16 March 2005

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Short-pulse-laser-induced damage and ablation of thin films of amorphous, diamond-like carbon have been investigated. Material removal and damage are caused by fracture of the film and ejection of large fragments. The fragments exhibit a delayed, intense and broadband emission of microsecond duration. Both fracture and emission are attributed to the laser-initiated relaxation of the high internal stresses of the pulse laser deposition-grown films.
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81.05.U- Carbon/carbon-based materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
68.60.Bs Mechanical and acoustical properties
78.45.+h Stimulated emission
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
62.20.M- Structural failure of materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
61.43.Er Other amorphous solids

Self-recovery of stressed nanomembranes

Chaoyang Jiang, Beth M. Rybak, Sergiy Markutsya, Paul E. Kladitis, and Vladimir V. Tsukruk

Appl. Phys. Lett. 86, 121912 (2005); http://dx.doi.org/10.1063/1.1889239 (3 pages) | Cited 14 times

Online Publication Date: 17 March 2005

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Long-term stability and self-recovery properties were studied for the compliant nanomembranes with a thickness of 55 nm free suspended over openings of several hundred microns across. These nanomembranes were assembled with spin-assisted layer-by-layer routines and were composed of polymer multilayers and gold nanoparticles. In a wide pressure range, the membranes behave like completely elastic freely suspended plates. Temporal stability was tested under extreme deformational conditions close to ultimate strain and very modest creep behavior was observed. A unique “self-recovery” ability of these nanomembranes was revealed in these tests. We observed a complete restoration of the initial nanomembrane shape and properties after significant inelastic deformation. These unique micromechanical properties are suggested to be the result of strong Coulombic interaction between the polyelectrolyte layers combined with a high level of biaxial orientation of polymer chains and in-plane prestretching stresses.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
81.05.Qk Reinforced polymers and polymer-based composites
62.25.-g Mechanical properties of nanoscale systems
81.40.Lm Deformation, plasticity, and creep
62.20.Hg Creep
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.70.-q Methods of materials testing and analysis
61.46.-w Structure of nanoscale materials

Platinum nitride with fluorite structure

R. Yu and X. F. Zhang

Appl. Phys. Lett. 86, 121913 (2005); http://dx.doi.org/10.1063/1.1890466 (3 pages) | Cited 45 times

Online Publication Date: 17 March 2005

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The mechanical stability of platinum nitride has been studied using first-principles calculations. By calculating the single-crystal elastic constants, we show that platinum nitride can be stabilized in the fluorite structure, in which the nitrogen atoms occupy all the tetrahedral interstitial sites of the metal lattice. The stability is attributed to the pseudogap effect from analysis of the electronic structure.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
61.72.J- Point defects and defect clusters
71.20.Ps Other inorganic compounds
71.15.Ap Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)
61.66.Fn Inorganic compounds
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity

Effects of hydrogen on the morphology and electrical properties of GaN grown by plasma-assisted molecular-beam epitaxy

Y. Dong, R. M. Feenstra, D. W. Greve, J. C. Moore, M. D. Sievert, and A. A. Baski

Appl. Phys. Lett. 86, 121914 (2005); http://dx.doi.org/10.1063/1.1890482 (3 pages) | Cited 1 time

Online Publication Date: 17 March 2005

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We study the effect of introducing hydrogen gas through the rf-plasma source during plasma-assisted molecular-beam epitaxy of GaN(0001). The well-known smooth-to-rough transition that occurs for this surface as a function of decreasing Ga flux in the absence of H is found to persist even with H present, although the critical Ga flux for this transition increases. Under Ga-rich conditions, the presence of hydrogen is found to induce step bunching (facetting) on the surface. Conductive atomic force microscopy reveals that leakage current through dislocation cores is significantly reduced when hydrogen is present during the growth.
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81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.40.Rs Electrical and magnetic properties related to treatment conditions
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.A- Nucleation and growth
68.37.Ps Atomic force microscopy (AFM)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Study of the dominant luminescence mechanism in InGaN/GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Yen-Lin Lai, Chuan-Pu Liu, and Zheng-Quan Chen

Appl. Phys. Lett. 86, 121915 (2005); http://dx.doi.org/10.1063/1.1891291 (3 pages) | Cited 12 times

Online Publication Date: 17 March 2005

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High quality green (508 nm) and blue (424 nm) light emitting diodes (LEDs) from InGaN/GaN multiple quantum wells with stable ultrasmall indium-rich clusters of 2 nm and 3 nm from two different nominal indium contents have been grown by metalorganic chemical vapor deposition. Comprehensive calculations including polarization, piezoelectric field, and size effect help derive an indium composition of 59% and 31% for the In-rich clusters of 2 nm and 3 nm, which agrees amazingly well with the asymmetric phase diagram for phase separation. From this model, we can further demonstrate that the dominant emitting mechanism for green LED is the polarization field, however, for blue LED, both the size effect and polarization effect are equally important.
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81.07.St Quantum wells
81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.67.De Quantum wells
78.67.Hc Quantum dots
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
78.55.Cr III-V semiconductors
68.65.Cd Superlattices
68.65.Fg Quantum wells
68.65.Hb Quantum dots (patterned in quantum wells)
64.75.-g Phase equilibria
81.30.Dz Phase diagrams of other materials
77.65.-j Piezoelectricity and electromechanical effects

Electrodeposition of bismuth thin films on n-GaAs (110)

Philippe M. Vereecken, Kenneth Rodbell, Chunxin Ji, and Peter C. Searson

Appl. Phys. Lett. 86, 121916 (2005); http://dx.doi.org/10.1063/1.1886248 (3 pages) | Cited 6 times

Online Publication Date: 17 March 2005

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Bismuth thin films are formed electrochemically on n-GaAs (110). Bismuth films up to a few hundred nanometers in thickness exhibit a strong (018) texture, while thicker films are polycrystalline. The barrier height of the n-GaAs/Bi Schottky contacts is 0.62 eV, about 0.2 eV lower than for electrodeposited bismuth films on GaAs (100).
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81.05.Bx Metals, semimetals, and alloys
81.15.Pq Electrodeposition, electroplating
68.55.A- Nucleation and growth
73.40.Ns Metal-nonmetal contacts
68.55.-a Thin film structure and morphology
73.30.+y Surface double layers, Schottky barriers, and work functions
68.35.B- Structure of clean surfaces (and surface reconstruction)

Mechanically induced excess enthalpy in inorganic glasses

Birgit Martin, Lothar Wondraczek, Joachim Deubener, and Yuanzheng Yue

Appl. Phys. Lett. 86, 121917 (2005); http://dx.doi.org/10.1063/1.1895483 (3 pages) | Cited 11 times

Online Publication Date: 18 March 2005

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We show the effect of mechanical quenching on the thermodynamic state of an inorganic glass, i.e., calcium metaphosphate glass, measured using differential scanning calorimetry (DSC). The calcium metaphosphate glasses were isothermally stretched at a given stress; and then cooled slowly. Afterwards the glasses are subject to two runs of DSC scans. We observed a pronounced sub-Tg exotherm on the first up scan, which is due to the release of the mechanically induced excess enthalpy. The exotherm increases with increasing tensile stress.
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81.05.Kf Glasses (including metallic glasses)
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
81.40.Gh Other heat and thermomechanical treatments
81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition

Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys

J. Plaza, J. L. Castaño, B. J. García, H. Carrère, and E. Bedel-Pereira

Appl. Phys. Lett. 86, 121918 (2005); http://dx.doi.org/10.1063/1.1891293 (3 pages) | Cited 10 times

Online Publication Date: 18 March 2005

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The temperature dependence of photoluminescence (PL) and photoreflectance (PR) spectra of GaAs1−xNx unrelaxed layers (0 ⩽ x<0.05) grown on GaAs (100) substrates is studied and compared. The energy gap deduced from PR measurements and its temperature dependence are in good agreement with predictions of the band anticrossing model. The main PL peak follows a different temperature dependence, being lower in energy than the energy gap obtained by PR. The observed energy difference between PR and PL is much larger than the typical exciton binding energy, increasing with N content. This result agrees with other works, suggesting that low temperature PL recombination in GaAs1−xNx involves electrons trapped in potential fluctuations due to N concentration inhomogeneities.
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78.66.Fd III-V semiconductors
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena

Formulas for periodic dislocations in general interfaces

W.-Z. Zhang

Appl. Phys. Lett. 86, 121919 (2005); http://dx.doi.org/10.1063/1.1888033 (3 pages) | Cited 6 times

Online Publication Date: 18 March 2005

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The present work has advanced the calculation method for determining the configuration of periodic dislocations in general interfaces, especially for three sets of dislocations that are usually unsolvable by other methods. In terms of a newly introduced reciprocal Burgers vector (bi*), the configuration and the Burgers vector of the interfacial dislocations are related by a simple expression with general validity. Existing formulas for spacing of the dislocations in various special interfaces can be integrated in a concise form of D = 1/∣Δbi*∣.
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61.72.Bb Theories and models of crystal defects
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
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