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28 Mar 2005

Volume 86, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 131114 (2005); http://dx.doi.org/10.1063/1.1889243 (3 pages)

R. Chan, M. Feng, N. Holonyak, and G. Walter
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Intrinsic reoxidation of microwave plasma-nitrided gate dielectrics

H. N. Alshareef, H. Niimi, A. Varghese, M. Bevan, R. Kuan, J. Holt, P. Tiner, and R. Khamankar

Appl. Phys. Lett. 86, 132901 (2005); http://dx.doi.org/10.1063/1.1895486 (3 pages) | Cited 2 times

Online Publication Date: 22 March 2005

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The impact of nitrogen concentration on nitrided gate dielectric scaling has been found to depend on the process conditions used to incorporate nitrogen. For example, the variation in the nitrogen content of gate dielectrics processed at high pressure (>107 Pa) has a strong impact on gate leakage current, but not on equivalent oxide thickness. While this effect allows nearly independent control of gate leakage and drive currents of the device, it prevents scaling of the gate dielectric. In contrast, it is found that at low process pressures (<13 Pa) the gate dielectric behaves in a more conventional fashion, where both electrical oxide thickness and film leakage change with film nitrogen content. A model is proposed to explain this behavior based on an intrinsic reoxidation process. Chemical bond analysis results are presented to support the proposed model.
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77.55.-g Dielectric thin films
81.65.Lp Surface hardening: nitridation, carburization, carbonitridation
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.65.Mq Oxidation
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.40.Rs Electrical and magnetic properties related to treatment conditions

Electrical conduction transition and largely reduced leakage current in aluminum-doped barium strontium titanate thin films heteroepitaxially grown on Ir/MgO/Si(100)

T. L. Chen, X. M. Li, W. B. Wu, W. D. Yu, X. D. Gao, and X. Zhang

Appl. Phys. Lett. 86, 132902 (2005); http://dx.doi.org/10.1063/1.1896448 (3 pages) | Cited 10 times

Online Publication Date: 22 March 2005

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Ba0.6Sr0.4Ti1−xAlxO3 (BSTA, x = 0, 3 at. %, 6 at. %) thin films have been prepared on Ir/MgO-buffered silicon substrates by pulsed-laser deposition. All-epitaxial growth of BSTA/Ir/MgO/Si heterostructures has been evidenced by x-ray diffraction and reflection high-energy electron diffraction. A large reduction in the leakage current density of BSTA thin films was observed by aluminum doping. For 3 at. % Al-doped BSTA thin films, the dominant conduction mechanism shows space-charge-limited current behavior at a low electric field, where the trap-filled limit field is determined as ETFL = 10 KV/cm, while at a high electric field the Poole–Frenkel emission is operative. In contrast, the conduction mechanism for 6 at. % Al-doped BSTA thin film is dominated by field-enhanced Schottky emission.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.60.+g Mixed conductivity and conductivity transitions
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
73.50.Fq High-field and nonlinear effects
77.22.Jp Dielectric breakdown and space-charge effects
68.55.-a Thin film structure and morphology
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Ternary rare-earth metal oxide high-k layers on silicon oxide

C. Zhao, T. Witters, B. Brijs, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V. V. Afanas’ev, A. Stesmans, and D. G. Schlom

Appl. Phys. Lett. 86, 132903 (2005); http://dx.doi.org/10.1063/1.1886249 (3 pages) | Cited 62 times

Online Publication Date: 22 March 2005

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Ternary oxides, GdScO3, DyScO3, and LaScO3, deposited by pulsed laser deposition using ceramics targets of stoichiometric composition, were studied as alternative high-k gate dielectrics on (100) Si. Their physical characterization was done using Rutherford backscattering, spectroscopic ellipsometry, x-ray diffraction, and transmission electron microscopy on blanket layers deposited on (100) Si, and electrical characterization on capacitors. It is found that DyScO3 and GdScO3 preserve their amorphous phases up to 1000 °C. Other encouraging properties for high k applications were demonstrated, including k-value ∼ 22, almost no hysteresis or frequency dispersion in C–V curves, and leakage current reduction comparable to that of HfO2 of the same equivalent oxide thickness.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
73.61.Ng Insulators
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Nk Insulators
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.37.Lp Transmission electron microscopy (TEM)

Phase diagrams of epitaxial BaTiO3 ultrathin films from first principles

Bo-Kuai Lai, Igor A. Kornev, L. Bellaiche, and G. J. Salamo

Appl. Phys. Lett. 86, 132904 (2005); http://dx.doi.org/10.1063/1.1890480 (3 pages) | Cited 42 times

Online Publication Date: 22 March 2005

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Using a first-principles-based scheme, we determine the qualitative and quantitative effects of surface∕interface, thickness and electrical boundary conditions on the temperature-misfit strain phase diagrams of epitaxial (001) BaTiO3 ultrathin films. The microscopic reasons leading to such effects are also revealed.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
68.55.Nq Composition and phase identification
68.55.-a Thin film structure and morphology
68.60.Bs Mechanical and acoustical properties
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