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28 Mar 2005

Volume 86, Issue 13, Articles (13xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 131114 (2005); http://dx.doi.org/10.1063/1.1889243 (3 pages)

R. Chan, M. Feng, N. Holonyak, and G. Walter
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Strain-induced formation of K2Ti6O13 nanowires via ion exchange

R. H. Wang, Q. Chen, B. L. Wang, S. Zhang, and L.-M. Peng

Appl. Phys. Lett. 86, 133101 (2005); http://dx.doi.org/10.1063/1.1890470 (3 pages) | Cited 8 times

Online Publication Date: 21 March 2005

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Nanowires with 10 nm in diameter and several microns in length have been synthesized by ion exchange reaction of Na2Ti3O7 in KOH aqueous solution, and the structure of these nanowires has been determined to be K2Ti6O13. It was shown that the nanowires were formed as a result of strain induced phase transformation from the Na2Ti3O7 structure to K2Ti6O13. The length of the nanowires was determined largely by the size of the raw Na2Ti3O7 crystal along its [010] direction, and the cross section was determined mainly by the competition between the lattice misfit resulted strain energy and the bonding characteristics of the Na2Ti3O7 structure.
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81.07.Bc Nanocrystalline materials
81.16.Be Chemical synthesis methods
61.46.-w Structure of nanoscale materials
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)
64.70.K- Solid-solid transitions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Mechanism for spatial organization in quantum dot self-assembly

Da Gao, Adam Kaczynski, and John A. Jaszczak

Appl. Phys. Lett. 86, 133102 (2005); http://dx.doi.org/10.1063/1.1896090 (3 pages) | Cited 3 times

Online Publication Date: 21 March 2005

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Inspired by experimental observations of spatially ordered growth hillocks on the (001) surfaces of natural graphite crystals, a mechanism for spatial organization in quantum dot self-assembly is proposed. The regular arrangement of steps from a screw dislocation-generated growth spiral provides the overall template for such ordering. An ordered array of quantum dots may be formed or nucleated from impurities driven to the step corners by diffusion and by their interactions with the spiral’s steps and kinks. Kinetic Monte Carlo simulation of a solid-on-solid model supports the feasibility of such a mechanism.
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68.65.Hb Quantum dots (patterned in quantum wells)
81.16.Dn Self-assembly
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.Lk Linear defects: dislocations, disclinations
68.35.Fx Diffusion; interface formation
68.35.B- Structure of clean surfaces (and surface reconstruction)

In situ growth of nanowire on the tip of a carbon nanotube under strong electric field

Y. G. Wang, Q. H. Li, T. H. Wang, X. W. Lin, V. P. Dravid, and S. X. Zhou

Appl. Phys. Lett. 86, 133103 (2005); http://dx.doi.org/10.1063/1.1879090 (3 pages) | Cited 4 times

Online Publication Date: 21 March 2005

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We present experimental evidence of in situ growth of carbon nanowires on the tip of a carbon nanotube under an applied voltage of 150 V. The grown nanowires with the well-defined geometry and diameter less than ten nanometers are structurally amorphous in nature and result in the solid carbon nanotube-nanowire junction with minimum junction size. The as-generated carbon nanotube-nanowire junction with a distinctive morphology clearly shows evidence of the bonding between the carbon atoms at the tip of carbon tube. The carbon nanotube could be used as a template for in situ growth of the carbonate nanowires under a strong electric field. The measured current-voltage (I‐V) characteristic of the nanotube-nanowire contact shows a nonlinear relation between the current and applied bias voltage due to the saturated sp3 bonds formed at the junction. The detected I‐V behavior suggests the formation of the metal∕insulator∕metal structure at the nanotube-nanowire junction.
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81.07.Lk Nanocontacts
81.05.U- Carbon/carbon-based materials
81.16.-c Methods of micro- and nanofabrication and processing
73.63.Rt Nanoscale contacts
61.46.-w Structure of nanoscale materials
61.43.Gt Powders, porous materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.37.Lp Transmission electron microscopy (TEM)

Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy

E. Dimakis, E. Iliopoulos, K. Tsagaraki, and A. Georgakilas

Appl. Phys. Lett. 86, 133104 (2005); http://dx.doi.org/10.1063/1.1891292 (3 pages) | Cited 16 times

Online Publication Date: 22 March 2005

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A consistent physical model of the growth of InN on GaN (0001) by radio-frequency plasma-assisted molecular-beam epitaxy is presented. Four distinct regimes of InN growth are observed due to the temperature dependence of indium adatoms’ mobility and of the InN decomposition rate. At substrate temperatures higher than 450 °C, indium adatoms are highly mobile and a self-regulating mechanism of InN islands’ diameter takes place, so that a stoichiometric N:In atomic ratio on the top face of the islands is established. As a result, two-dimensional growth is possible only with In/N atomic ratio on the substrate surface equal to unity. The self-regulating mechanism could be exploited to engineer self-organized nanostructures.
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81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
68.55.Nq Composition and phase identification
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
52.77.Dq Plasma-based ion implantation and deposition

Scanning tunneling microscope-based thermochemical hole burning on a series of charge transfer complexes

Xuechun Yu, Hailin Peng, Chunbo Ran, Lei Sun, Ran Zhang, and Zhongfan Liu

Appl. Phys. Lett. 86, 133105 (2005); http://dx.doi.org/10.1063/1.1883315 (3 pages) | Cited 5 times

Online Publication Date: 22 March 2005

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A thermochemical hole burning effect was observed on a series of 7, 7, 8, 8-tetra cyanoquinodimethane charge transfer complexes when applying a suitable voltage pulse using scanning tunneling microscope, which is attributed to the localized thermochemical decomposition of the complex induced by the current heating effect. The decomposition reaction evolves the low boiling point decomposition components of the charge transfer complex, leaving a nanometer-sized hole on the crystal surface. This effect demonstrates the possibility of creating a ultrahigh density thermochemical hole burning memory, in which information bit is recorded as a hole.
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82.60.Fa Heat capacities and heats of phase transitions
82.60.Cx Enthalpies of combustion, reaction, and formation
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.33.Vx Reactions in flames, combustion, and explosions
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Current fluctuation in single-hole transport through a two-dimensional Si multidot

Ratno Nuryadi, Hiroya Ikeda, Yasuhiko Ishikawa, and Michiharu Tabe

Appl. Phys. Lett. 86, 133106 (2005); http://dx.doi.org/10.1063/1.1883705 (3 pages) | Cited 10 times

Online Publication Date: 22 March 2005

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Single-hole transport in a two-dimensional Si multidot-channel field-effect transistor is studied. It is found that the single-hole-tunneling current fluctuates in the particular ranges of drain voltage and gate voltage. Such a phenomenon can be explained by a model that the hole transport through the percolation path is sensitively influenced and fluctuates with the time due to charging–discharging and polarity-switching of the dots adjacent to the percolation path. A Monte Carlo simulation using a parallel-double-dot circuit shows good agreement with the experimental characteristics.
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85.30.Tv Field effect devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
85.30.De Semiconductor-device characterization, design, and modeling
73.63.Kv Quantum dots
73.40.Gk Tunneling
73.50.Dn Low-field transport and mobility; piezoresistance

Growth of Ga-doped ZnO nanowires by two-step vapor phase method

C. Xu, M. Kim, J. Chun, and D. Kim

Appl. Phys. Lett. 86, 133107 (2005); http://dx.doi.org/10.1063/1.1888035 (3 pages) | Cited 29 times

Online Publication Date: 22 March 2005

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A two-step route is presented to dope Ga into ZnO nanowires and also fabricate heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires is about 7 at. % from energy-dispersive x-ray analysis. The single crystal Ga doped ZnO nanowires with the diameter of 40 nm and the length of 300–500 nm are well aligned on the ZnO bulk. The growth direction is along [001]. Raman scattering analysis shows that the doping of Ga into ZnO nanowires depresses Raman E1L mode of ZnO, manifesting that Ga sites in ZnO are Zn sites (GaZn). The formation mechanism of Zn1−xGaxO nanowires/ZnO heterostructures is proposed.
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81.07.Bc Nanocrystalline materials
81.05.Dz II-VI semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.30.Fs III-V and II-VI semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods

Selective metal electrodeposition through doping modulation of semiconductor surfaces

Christian Scheck, Paul Evans, Rainer Schad, Giovanni Zangari, Lucia Sorba, Giorgio Biasiol, and Stefan Heun

Appl. Phys. Lett. 86, 133108 (2005); http://dx.doi.org/10.1063/1.1896086 (3 pages) | Cited 7 times

Online Publication Date: 23 March 2005

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We demonstrate selective electrodeposition of magnetic layers on doped semiconductors resulting in a self-aligned pattern which replicates the doping pattern in the semiconductor surface. A Schottky barrier forms at the interface between a semiconductor substrate and the electrolyte, which upon application of a cathodic potential is biased in the forward (reverse) direction for n- or p-type semiconductors, respectively. Electron transfer from an n-type semiconductor is thus possible, while breakdown of the Schottky barrier would be necessary for deposition on a p-type substrate. The process will thus be spatially selective on a lateral modulation of the substrate doping. As an example we demonstrate the deposition of Co on GaAs.
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81.05.Ea III-V semiconductors
61.72.uj III-V and II-VI semiconductors
81.15.Pq Electrodeposition, electroplating
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Mr Semiconductor-electrolyte contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
75.50.Cc Other ferromagnetic metals and alloys
68.55.-a Thin film structure and morphology

Sensitive detection of nanomechanical motion using piezoresistive signal downmixing

I. Bargatin, E. B. Myers, J. Arlett, B. Gudlewski, and M. L. Roukes

Appl. Phys. Lett. 86, 133109 (2005); http://dx.doi.org/10.1063/1.1896103 (3 pages) | Cited 27 times

Online Publication Date: 24 March 2005

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We have developed a method of measuring rf-range resonance properties of nanoelectromechanical systems (NEMS) with integrated piezoresistive strain detectors serving as signal downmixers. The technique takes advantage of the high strain sensitivity of semiconductor-based piezoresistors, while overcoming the problem of rf signal attenuation due to a high source impedance. Our technique also greatly reduces the effect of the cross-talk between the detector and actuator circuits. We achieve thermomechanical noise detection of cantilever resonance modes up to 71 MHz at room temperature, demonstrating that downmixed piezoresistive signal detection is a viable high-sensitivity method of displacement detection in high-frequency NEMS.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
06.30.Bp Spatial dimensions (e.g., position, lengths, volume, angles, and displacements)
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.30.-z Semiconductor devices
07.10.Cm Micromechanical devices and systems

Structure and chirality distribution of multiwalled boron nitride nanotubes

A. Celik-Aktas, J. M. Zuo, J. F. Stubbins, C. Tang, and Y. Bando

Appl. Phys. Lett. 86, 133110 (2005); http://dx.doi.org/10.1063/1.1885177 (3 pages) | Cited 12 times

Online Publication Date: 24 March 2005

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We report on a high-resolution electron diffraction study of the structure of individual multiwalled boron nitride nanotubes (MW-BNNTs). The tube chirality was determined by electron diffraction. Diffraction patterns were recorded from small sections of the nanotubes, ∼ 125 nm long, using the nanoarea electron diffraction technique. Accurate measurements of the MW-BNNT chiral angles and their distribution were made from diffraction patterns. Generally, the tube chiralities within each MW-BNNT are strongly correlated; clustering around a single chirality with a dispersion of a few degrees. Multihelix nanotubes were rarely observed. Statistics based on 67 nanotubes revealed a dispersion of the chiral angles (α) with some preference of tubes in the ranges of 10° ⩽ α ⩽ 15° and 25° ⩽ α ⩽ 30°. Since various properties of nanotubes depend on the tube structure (diameter and chirality), the results presented here have general significances to nanotube growth and applications.
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61.46.-w Structure of nanoscale materials
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Carbon nanotube oscillators toward zeptogram detection

Mitsumasa Nishio, Shintaro Sawaya, Seiji Akita, and Yoshikazu Nakayama

Appl. Phys. Lett. 86, 133111 (2005); http://dx.doi.org/10.1063/1.1896426 (3 pages) | Cited 16 times

Online Publication Date: 24 March 2005

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We demonstrate an application of a nanotube cantilever for zeptogram-level mass detection. This letter presents a quantitative method to measure the oscillation amplitude of a nanotube cantilever using a focused electron beam of a scanning electron microscope. The quality factor of ∼ 1000 for the nanotube cantilever is revealed and the resolution of the resonant frequency is achieved to be ∼ 10 Hz, which corresponds to a mass range of less than 100 zg at room temperature.
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85.35.Kt Nanotube devices
06.30.Dr Mass and density
61.80.Fe Electron and positron radiation effects
61.82.Rx Nanocrystalline materials

Synthesis of taperlike Si nanowires with strong field emission

Y. L. Chueh, L. J. Chou, S. L. Cheng, J. H. He, W. W. Wu, and L. J. Chen

Appl. Phys. Lett. 86, 133112 (2005); http://dx.doi.org/10.1063/1.1883316 (3 pages) | Cited 43 times

Online Publication Date: 24 March 2005

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Taperlike Si nanowires (SiNWs) have been synthesized by annealing of high-density FeSi2 nanodots on (001)Si at 1200 °C in a N2 ambient. The tip regions of SiNWs are about 5–10 nm in diameter. The average length of the SiNWs is about 6 μm with aspect ratios as high as 150–170. A growth model based on oxide-assisted growth is proposed. The taperlike morphology may be caused by the passivation of the SiO2 coating layer, which results in the different levels of absorption of SiO along the length of the nanowires. The SiNWs exhibit a turn-on field of 6.3–7.3 V/μm and a threshold field of 9–10 V/μm. The excellent field emission characteristics are attributed to the taperlike geometry of the crystalline Si nanowires.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing
61.72.Cc Kinetics of defect formation and annealing
81.65.Rv Passivation
79.70.+q Field emission, ionization, evaporation, and desorption
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Stable and erasable patterning of vanadium pentoxide thin films by atomic force microscope nanolithography

Shiho Iwanaga, R. B. Darling, and D. H. Cobden

Appl. Phys. Lett. 86, 133113 (2005); http://dx.doi.org/10.1063/1.1896100 (3 pages) | Cited 3 times

Online Publication Date: 25 March 2005

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Long lasting colored pattern formation on sol–gel deposited vanadium pentoxide (V2O5) thin films is demonstrated by atomic force microscope (AFM) nanolithography. The films can be locally colorized by application of a positive dc bias voltage on the conductive AFM tip. The patterns can be erased, or “bleached,” by application of a negative bias voltage. The changes in optical reflectivity, topography, and conductivity measurements made on as-deposited, colored, and bleached areas were consistent with a model in which the incorporation of hydrogen ions into V2O5 thin films is responsible for the coloration process.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.16.Rf Micro- and nanoscale pattern formation
81.16.Nd Micro- and nanolithography
81.16.Ta Atom manipulation
73.61.Ng Insulators
78.66.Nk Insulators
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.40.Ha Other nonmetallic inorganics
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.40.Tv Optical and dielectric properties related to treatment conditions
68.55.-a Thin film structure and morphology
68.37.Ps Atomic force microscopy (AFM)

Micropatterning of metal substrate by adhesive force lithography

Soon-min Seo, Jeong-yong Park, and Hong H. Lee

Appl. Phys. Lett. 86, 133114 (2005); http://dx.doi.org/10.1063/1.1896429 (3 pages) | Cited 17 times

Online Publication Date: 25 March 2005

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We introduce adhesive force lithography (AFL), a detachment-based method for patterning metal surface. In this method, all the polymer layer except for the desired pattern gets lifted up from the metal surface. The craze microstructure unique to thin polymer films on the order of 102 nm is utilized for this AFL along with a difference in adhesive force at two interfaces. Poly(urethaneacrylate) mold, which has a high enough work of adhesion with polymer, makes AFL effective. This technique is purely additive, fast ( ∼ 10 s contact time), and applicable to large area patterning (10 cm×10 cm).
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81.05.Bx Metals, semimetals, and alloys
81.65.Cf Surface cleaning, etching, patterning
68.35.Np Adhesion
68.55.-a Thin film structure and morphology
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