Selective etching of InGaAs∕GaAs(100) multilayers of quantum-dot chains

Wang, Zh. M.; Zhang, L.; Holmes, K.; Salamo, G. J.

doi:doi:10.1063/1.1898425

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Surface-charge-induced asymmetric electrokinetic transport in confined silicon nanochannels

Molecular dynamics simulations of a NaF solution transport in a confined silicon nanochannel indicated that the water flux and the ionic conductivity through two oppositely charged silicon channels, that are otherwise similar, differ by a factor of more than three, and the co-ion fluxes are in the opposite direction. Such a behavior cannot be predicted by the classical electrokinetic transport theory, and is found to originate from the asymmetric dependence of the transport properties of water ...

Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by SiH4+N2 and SiH4+NH3 plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by SiH4+NH3 plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by SiH4+N2 plasma. It was also found that the charge re...

We report selective chemical etching as a promising procedure to study the buried quantum dots in multiple InGaAs∕GaAs layers. The dot layer-by-dot layer etching is demonstrated using a mixed solution of NH₄OH:H₂O₂:H₂O. Regular plan-view atomic force microscopy reveals that all of the exposed InGaAs layers have a chain-like lateral ordering despite the potential of significant In–Ga intermixing during capping. The vertical self-correlation of quantum dots in the chains is observed.

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, multilayers, buried layers, semiconductor quantum dots, etching, surface morphology, surface topography, atomic force microscopy

PACS

81.05.Ea

III-V semiconductors
81.65.Cf

Surface cleaning, etching, patterning
68.35.B-

Structure of clean surfaces (and surface reconstruction)
68.65.Hb

Quantum dots (patterned in quantum wells)
68.65.Ac

Multilayers
68.37.Ps

Atomic force microscopy (AFM)

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.1898425

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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