Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

Cho, Chang-Hee; Kim, Baek-Hyun; Kim, Tae-Wook; Park, Seong-Ju; Park, Nae-Man; Sung, Gun-Yong

doi:doi:10.1063/1.1894595

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

Selective etching of InGaAs∕GaAs(100) multilayers of quantum-dot chains

We report selective chemical etching as a promising procedure to study the buried quantum dots in multiple InGaAs∕GaAs layers. The dot layer-by-dot layer etching is demonstrated using a mixed solution of NH4OH:H2O2:H2O. Regular plan-view atomic force microscopy reveals that all of the exposed InGaAs layers have a chain-like lateral ordering despite the potential of significant In–Ga intermixing during capping. The vertical self-correlation of quantum dots in the chains is observed.

Long-wavelength light emission and lasing from InAs/GaAs quantum dots covered by a GaAsSb strain-reducing layer

The effects of a thin GaAsSb strain-reducing layer on the optical properties of InAs/GaAs quantum dots (QDs) are investigated. With increasing Sb composition, the room-temperature emission wavelength of the InAs QDs increases to ∼ 1.43 μm. For Sb compositions above 14%, the system becomes Type II, with a decrease of the photoluminescence (PL) efficiency. At a composition of 14%, the room-temperature PL efficiency is maximized, and is also significantly enhanced when compared to that of convent...

The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by SiH₄+N₂ and SiH₄+NH₃ plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by SiH₄+NH₃ plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by SiH₄+N₂ plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of SiH₄+NH₃ plasma, due to the hydrogen passivation of the defects in the silicon nitride films by NH₃ during the growth of the Si QDs.

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

silicon, silicon compounds, hydrogen, elemental semiconductors, thin films, semiconductor quantum dots, passivation, interface states, plasma deposition, transmission electron microscopy, semiconductor growth, hydrogenation

PACS

81.07.Ta

Quantum dots
81.05.Cy

Elemental semiconductors
73.21.La

Quantum dots
81.15.Jj

Ion and electron beam-assisted deposition; ion plating
52.77.Dq

Plasma-based ion implantation and deposition
68.37.Lp

Transmission electron microscopy (TEM)

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.1894595

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

For access to citing articles, you need to log in.

Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)