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4 Apr 2005

Volume 86, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 86, 142101 (2005); http://dx.doi.org/10.1063/1.1895476 (3 pages)

M. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth, and R. Köhler
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Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge/Si(100)-(2×1): Initial stage of atomic layer deposition of HfO2 on SiGe surface

Wei Chen, Hong-Liang Lu, David Wei Zhang, Min Xu, Jie Ren, Jian-Yun Zhang, Ji-Tao Wang, and Li-Kang Wang

Appl. Phys. Lett. 86, 142901 (2005); http://dx.doi.org/10.1063/1.1899253 (3 pages) | Cited 2 times

Online Publication Date: 30 March 2005

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We have investigated adsorption and dissociation of water and HfCl4 on Ge/Si(100)-(2×1) surface with density functional theory. The Si–Ge heterodimer and Ge–Ge homodimer are employed to represent the Si1−xGex surface. The activation energy for adsorption of water on Ge–Ge homodimer is much higher than that on Si–Ge heterodimer. No net activation barrier exists during the adsorption of HfCl4 on both SiGe surface dimers. The differences in the potential energy surface between reactions on Si–Ge and Ge–Ge dimers are due to different bond strengths. It should also be noticed that the activation energy for HfCl4 is quite flat, thus HfCl4 adsorbs and dissociates on Ge/Si(100)-(2×1) easily.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.43.Mn Adsorption kinetics
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
82.20.Kh Potential energy surfaces for chemical reactions
82.20.Pm Rate constants, reaction cross sections, and activation energies
82.30.Nr Association, addition, insertion, cluster formation
68.55.-a Thin film structure and morphology

Epitaxial nature and anisotropic dielectric properties of (Pb,Sr)TiO3 thin films on NdGaO3 substrates

Y. Lin, X. Chen, S. W. Liu, C. L. Chen, Jang-Sik Lee, Y. Li, Q. X. Jia, and A. Bhalla

Appl. Phys. Lett. 86, 142902 (2005); http://dx.doi.org/10.1063/1.1897078 (3 pages) | Cited 15 times

Online Publication Date: 30 March 2005

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Epitaxial behavior of (Pb,Sr)TiO3 thin films on (110) NdGaO3 substrates fabricated in different conditions have been investigated using high resolution x-ray diffraction and characterized with interdigital dielectric measurement. A slow cooling results in films with a-axis normal to the surface (a-axis growth), whereas a fast cooling leads to growth of c-axis oriented films. The dielectric properties of the films prepared under different cooling rates are closely related to the crystalline structure of the films.
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68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology

Reducing azimuthal domains in epitaxial ferroelectric lanthanum-substituted bismuth titanate films using miscut yttria-stabilized zirconia substrates

Sung Kyun Lee, Dietrich Hesse, Ulrich Gösele, and Ho Nyung Lee

Appl. Phys. Lett. 86, 142903 (2005); http://dx.doi.org/10.1063/1.1897044 (3 pages) | Cited 2 times

Online Publication Date: 31 March 2005

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We report the effect of a definite miscut of yttria-stabilized zirconia (YSZ) (100) single-crystal substrates onto the number of azimuthal domain variants within epitaxial La-substituted Bi4Ti3O12 (BLT) ferroelectric thin films as well as within SrRuO3 electrode layers, both grown on these substrates. YSZ substrates with a miscut angle of 5° were studied, with two different directions of the miscut, viz., YSZ[001] and YSZ[011]. A reduction of the number of azimuthal domain variants by 50% was attained on substrates with a [011]-directed miscut. Due most probably to the reduced number of azimuthal domain boundaries, larger remanent polarization values were attained in BLT films when grown on miscut substrates.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.45.Mp Thin layers, films, monolayers, membranes

Strain relaxation of epitaxial SrTiO3 thin films on LaAlO3 by two-step growth technique

Tomoaki Yamada, Konstantin F. Astafiev, Vladimir O. Sherman, Alexander K. Tagantsev, Paul Muralt, and Nava Setter

Appl. Phys. Lett. 86, 142904 (2005); http://dx.doi.org/10.1063/1.1897047 (3 pages) | Cited 23 times

Online Publication Date: 31 March 2005

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Using pulsed-laser deposition, a two-step growth technique was applied to epitaxial SrTiO3 (STO) thin films on LaAlO3 substrates providing a way to obtain an effective strain relaxation in these films otherwise strained due to lattice mismatch between film and substrate. By changing the thickness of a first layer, deposited at a temperature as low as 100 °C before the deposition of the main layer at 750 °C, different strain relaxation states of the films could be systematically realized. With a 10-nm-thick first layer, an almost full strain relaxation at the deposition temperature of the main layer was achieved, suggesting a strong impact of this method on strain relaxation. The in-plane dielectric measurements displayed that the ferroelectric transition temperature increases with strain relaxation during the growth. This trend is correct and compatible with the theoretical prediction of the behavior of strained STO derived from Landau theory.
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81.16.Mk Laser-assisted deposition
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Effect of dc bias on the Curie–Weiss exponent in 0.76Pb(Mg1/3Nb2/3)O3–0.24PbTiO3 ferroelectric single crystal

S. G. Lu, Z. K. Xu, Haydn Chen, X. Y. Zhao, H. S. Luo, J. Wang, H. L. W. Chan, and C. L. Choy

Appl. Phys. Lett. 86, 142905 (2005); http://dx.doi.org/10.1063/1.1897063 (3 pages) | Cited 4 times

Online Publication Date: 1 April 2005

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Permittivity versus temperature characteristics and Curie–Weiss exponent (CWE) γ in the universal Curie–Weiss law [ε−1 = εm−1[1+(T−Tc)γ/(2δ2)](1 ⩽ γ ⩽ 2)] as a function of dc bias field were obtained for ⟨001⟩, ⟨011⟩, and ⟨111⟩ oriented 0.76Pb(Mg1/3Nb2/3)O3–0.24PbTiO3 single crystals. Results indicated that γ is a function of dc bias field and three different oriented crystals show slight different γ values but the similar dc field dependence.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)
77.80.B- Phase transitions and Curie point
81.40.Gh Other heat and thermomechanical treatments
81.40.Tv Optical and dielectric properties related to treatment conditions

Preparing Pb(Zr,Ti)O3 films less than 100 nm thick by low-temperature metalorganic chemical vapor deposition

A. Nagai, H. Morioka, G. Asano, H. Funakubo, and A. Saiki

Appl. Phys. Lett. 86, 142906 (2005); http://dx.doi.org/10.1063/1.1899770 (3 pages) | Cited 4 times

Online Publication Date: 1 April 2005

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Polycrystalline Pb(Zr,Ti)O3 (PZT) films 70–80 nm thick on (111)Ir/TiO2/SiO2/Si substrates were prepared at 415 °C by metalorganic chemical vapor deposition (MOCVD). At 3 V, the remanent polarization (Pr) of the as-deposited films was approximately 22 μC/cm2. Inserting PbTiO3 seeds between the PZT films and Ir bottom electrodes improved the crystallinity of the films markedly but improved their ferroelectric properties only slightly. Low-temperature postannealing, on the other hand, even at 400 °C (i.e., below the deposition temperature), improved Pr values and hysteresis loop shapes without obviously improving the crystallinity of the films. The electrical properties were improved even more when the films were annealed at 500 °C. These results suggest that the low-temperature processing and sub-100-nm film thickness needed for making three-dimensionally structured ferroelectric capacitors can be obtained by using low-temperature MOCVD to deposit PZT films, and then annealing those films at a temperature no greater than 500 °C.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
81.40.Gh Other heat and thermomechanical treatments
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.40.Tv Optical and dielectric properties related to treatment conditions

Dynamic leakage current compensation in ferroelectric thin-film capacitor structures

René Meyer, Rainer Waser, Klaus Prume, Torsten Schmitz, and Stephan Tiedke

Appl. Phys. Lett. 86, 142907 (2005); http://dx.doi.org/10.1063/1.1897425 (3 pages) | Cited 11 times

Online Publication Date: 1 April 2005

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We report on a measurement procedure to separate ferroelectric switching current and dielectric displacement current from the leakage current in leaky ferroelectric thin-film capacitor structures. The ac current response is determined for two adjacent frequencies. Taking advantage of the different frequency dependencies of the ferroelectric switching current, dielectric displacement current and ohmic current, the hysteresis loop is calculated without performing a static leakage current measurement, which causes a high dc field stress to the sample. The applicability of the proposed measurement procedure is demonstrated on a Pt/Pb(Zr,Ti)O3/IrO2 ferroelectric capacitor revealing a high leakage current.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
73.40.Ns Metal-nonmetal contacts
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
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