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4 Apr 2005

Volume 86, Issue 14, Articles (14xxxx)

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Appl. Phys. Lett. 86, 142101 (2005); http://dx.doi.org/10.1063/1.1895476 (3 pages)

M. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth, and R. Köhler
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Examining the screening limit of field effect devices via the metal-insulator transition

X. Hong, A. Posadas, and C. H. Ahn

Appl. Phys. Lett. 86, 142501 (2005); http://dx.doi.org/10.1063/1.1897076 (3 pages) | Cited 30 times

Online Publication Date: 28 March 2005

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The electronic screening length, the distance over which an electric field is attenuated in a material, imposes a lower physical bound on the lateral size scaling of semiconductor field effect devices. Alternatives will be needed to achieve devices whose characteristic dimensions approach a nanometer. In this work, we demonstrate the atomic-scale nature of screening at high electron densities, using the polarization field of a ferroelectric oxide, Pb(Zr,Ti)O3, to electrostatically modulate the metallicity of ultrathin manganite La1−xSrxMnO3 (LSMO) films near the metal-insulator transition. Within the screening length, the transport characteristics of LSMO vary sharply at the scale of a single atomic layer.
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85.30.Tv Field effect devices
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
71.30.+h Metal-insulator transitions and other electronic transitions
73.61.Ng Insulators
72.20.Fr Low-field transport and mobility; piezoresistance
77.22.Ej Polarization and depolarization

Domain decoration in dipolar coupled ferromagnetic stacks with perpendicular anisotropy

S. Wiebel, J.-P. Jamet, N. Vernier, A. Mougin, J. Ferré, V. Baltz, B. Rodmacq, and B. Dieny

Appl. Phys. Lett. 86, 142502 (2005); http://dx.doi.org/10.1063/1.1897845 (3 pages) | Cited 22 times

Online Publication Date: 29 March 2005

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The dipolar stray field effects between two nonuniformly magnetized ferromagnetic Co/Pt stacks with perpendicular anisotropy are investigated by polar magneto-optical Kerr effect microscopy. Decoration of a reversed domain in the hard stack by a domain ring in the soft stack is evidenced and interpreted by magnetostatic calculations. Mirrored 360° domain walls are strongly stabilized by these interactions.
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75.50.Cc Other ferromagnetic metals and alloys
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.60.Jk Magnetization reversal mechanisms
75.30.Gw Magnetic anisotropy
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
68.65.Ac Multilayers

Giant magnetoresistance in an epitaxial NiMnSb/Cu/CoFe multilayer

E. Girgis, P. Bach, C. Rüster, C. Gould, G. Schmidt, and L. W. Molenkamp

Appl. Phys. Lett. 86, 142503 (2005); http://dx.doi.org/10.1063/1.1897828 (3 pages) | Cited 3 times

Online Publication Date: 29 March 2005

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We have fabricated current-in-plane giant magnetoresistive (GMR) devices based on multilayers of epitaxial NiMnSb and sputtered Cu and CoFe. The devices show a magnetoresistance of up to 3.5% at room temperature. The amplitude of the current-in-plane GMR signal and the nature of the coupling between the two magnetic layers depend on the thickness of the Cu layer. For a 1.5 nm thick Cu layer, the device exhibits antiferromagnetic coupling, whereas a parallel alignment is observed for 2.2 or 3 nm thick Cu layers at low field.
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85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.47.De Giant magnetoresistance
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Et Exchange and superexchange interactions

Composite media (dynamic tilted media) for magnetic recording

Jian-Ping Wang, W. K. Shen, J. M. Bai, R. H. Victora, J. H. Judy, and W. L. Song

Appl. Phys. Lett. 86, 142504 (2005); http://dx.doi.org/10.1063/1.1896431 (3 pages) | Cited 53 times

Online Publication Date: 1 April 2005

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We designed and fabricated a composite magnetic recording medium with exchange decoupled magnetic grains that consist of two vertically exchange-coupled magnetic regions (one is magnetically soft and one is magnetically hard) as an approach to alleviate the writing field limitation of perpendicular magnetic recording heads. A nonmagnetic layer with different thickness was put between the hard and soft layer to tune the exchange coupling. With proper coupling, significant drop of the coercivity field was observed for this composite medium while still maintaining good thermal stability. Better recording performance was obtained for such medium compared to perpendicular and longitudinal medium. The results have proved the possibility of fabricating a writable recording medium having an ultrahigh magnetic anisotropy constant (Ku) value.
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75.50.Ss Magnetic recording materials
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.Ww Permanent magnets
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Dd Nonmetallic ferromagnetic materials
85.70.Kh Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.
75.50.Vv High coercivity materials
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.30.Gw Magnetic anisotropy
75.30.Et Exchange and superexchange interactions
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