APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Apr 2005

Volume 86, Issue 14, Articles (14xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 142101 (2005); http://dx.doi.org/10.1063/1.1895476 (3 pages)

M. Hanke, T. Boeck, A.-K. Gerlitzke, F. Syrowatka, F. Heyroth, and R. Köhler
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds

Strong photoluminescence of nanostructured crystalline tungsten oxide thin films

M. Feng, A. L. Pan, H. R. Zhang, Z. A. Li, F. Liu, H. W. Liu, D. X. Shi, B. S. Zou, and H. J. Gao

Appl. Phys. Lett. 86, 141901 (2005); http://dx.doi.org/10.1063/1.1898434 (3 pages) | Cited 41 times

Online Publication Date: 29 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Strong photoluminescence (PL) is observed in nanostructured crystalline tungsten oxide thin films that are prepared by thermal evaporation. Two kinds of films are investigated—one made of nanoparticles and another of nanowires. At room temperature, strong PL emissions at ultraviolet-visible and blue regions are found in both of the films. Compared with the complete absence of emission of bulk phase tungsten oxide powder under the same excitation conditions, our results clearly demonstrate the quantum-confinement-effect-induced photoluminescence in nanostructured tungsten oxides.
Show PACS
78.66.Li Other semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Hx Other solid inorganic materials
68.55.-a Thin film structure and morphology

Activation volume for phosphorus diffusion in silicon and Si0.93Ge0.07

Yuechao Zhao, Michael J. Aziz, Nikolaj R. Zangenberg, and Arne Nylandsted Larsen

Appl. Phys. Lett. 86, 141902 (2005); http://dx.doi.org/10.1063/1.1896445 (3 pages) | Cited 4 times

Online Publication Date: 30 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The hydrostatic pressure dependence of the diffusivity of P in compressively strained Si0.93Ge0.07 and unalloyed Si has been measured. In both cases the diffusivity is almost independent of pressure, characterized by an activation volume V* of (+0.09±0.11) times the atomic volume Ω for the unalloyed Si, and (+0.01±0.06) Ω for Si0.93Ge0.07. The results are used in conjunction with the reported effect of biaxial strain on diffusion normal to the surface to test the prediction for an interstitialcy-based mechanism of Aziz’s phenomenological thermodynamic treatment of diffusion under uniform nonhydrostatic stress states. The prediction agrees well with measured behavior, lending additional credence to the interstitial-based mechanism and supporting the nonhydrostatic thermodynamic treatment.
Show PACS
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.J- Point defects and defect clusters
68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties

Dual ring laser emission of conducting polymers in microcapillary structures

Y. Yoshida, T. Nishimura, A. Fujii, M. Ozaki, and K. Yoshino

Appl. Phys. Lett. 86, 141903 (2005); http://dx.doi.org/10.1063/1.1899229 (3 pages) | Cited 7 times

Online Publication Date: 30 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have demonstrated photopumped multimode laser emission from cylindrical microcavities of conducting polymer thin films, which were formed by deposition on the inside surface of the glass microcapillary with capillary action. The laser emission was characterized by narrow emission lines and a well-defined excitation threshold. We also fabricated dual ring cavities on inner and outer surfaces of microcapillaries, and laser emission from both sides of capillaries was observed by photopumping with one excitation source. Fabricating two cylindrical microcavities on inner and outer surfaces of the microcapillary by utilizing a different sort of conducting polymers, dual laser emissions, blue and red in color, were obtained concurrently.
Show PACS
82.45.Mp Thin layers, films, monolayers, membranes
81.16.Mk Laser-assisted deposition

Dynamic evolution of nanoscale shear bands in a bulk-metallic glass

Bing Yang, Mark L. Morrison, Peter K. Liaw, Raymond A. Buchanan, Gongyao Wang, Chain T. Liu, and Mitsunori Denda

Appl. Phys. Lett. 86, 141904 (2005); http://dx.doi.org/10.1063/1.1891302 (3 pages) | Cited 85 times

Online Publication Date: 30 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Dynamic shear-band-evolution processes in a bulk-metallic glass (BMG), an emerging class of materials, were captured by a state-of-the-art, high-speed, infrared camera. Many shear bands initiated, propagated, and arrested before the final fracture in tension, each with decreasing temperature, and shear-strain profiles. A free-volume-exhaustion mechanism was proposed to explain the phenomena. The results contribute to understanding and improving the limited ductility of BMGs, which otherwise have superior mechanical properties.
Show PACS
81.05.Kf Glasses (including metallic glasses)
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.40.Lm Deformation, plasticity, and creep
62.20.M- Structural failure of materials
62.20.F- Deformation and plasticity

Electronic and atomic structures of quasi-one-dimensional K0.3MoO3

C. H. Huang, J. C. Jan, J. W. Chiou, H. M. Tsai, C. W. Pao, C. H. Du, W. F. Pong, M.-H. Tsai, M. T. Tang, J. J. Lee, and J. F. Lee

Appl. Phys. Lett. 86, 141905 (2005); http://dx.doi.org/10.1063/1.1897437 (3 pages) | Cited 1 time

Online Publication Date: 30 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The electronic and atomic structures of quasi-one-dimensional blue bronze K0.3MoO3 were investigated by polarization-dependent O K-edge x-ray absorption near-edge structure (XANES) and Mo K-edge extended x-ray absorption fine structure (EXAFS) measurements at various temperature and applied voltages. The O K-edge XANES spectra suggest that the number of unoccupied O 2p–Mo 4d hybridized states increases and decreases with temperature, respectively, below and above a critical temperature of 180 K. The along b-axis electric current measurements show a threshold applied voltage, beyond which the current increases rapidly. The Mo K-edge EXAFS measurements show that the Mo–O bond lengths are insensitive to the temperature even beyond 180 K.
Show PACS
81.05.Bx Metals, semimetals, and alloys
78.70.Dm X-ray absorption spectra

Dense arrays of Co nanocrystals epitaxially grown on ion-patterned Cu(110) substrates

Alessandro Molle, F. Buatier de Mongeot, C. Boragno, R. Moroni, F. Granone, D. Sekiba, R. Buzio, U. Valbusa, R. Felici, and C. Quirós

Appl. Phys. Lett. 86, 141906 (2005); http://dx.doi.org/10.1063/1.1897438 (3 pages) | Cited 3 times

Online Publication Date: 30 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the growth of {111}-faceted Co nanocrystals endowed with fcc structure during multilayer epitaxial deposition on a flat Cu(110) substrate. Lateral ordering of the Co nanocrystals into a periodic array is achieved if the Co deposition is performed on a Cu(110) substrate, prepatterned by ion sculpting. While for low coverages the Co film growth is conformal, reproducing the underlying arrangement of the Cu substrate pattern, for film thicknesses above 16 monolayers, size-selected {111}-faceted Co nanocrystals nucleate in registry with the underlying pattern periodicity.
Show PACS
81.07.Bc Nanocrystalline materials
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Anomalous gap dependence of stretched Teflon∕poly(p-phenylene vinylene) films

A. Marletta, R. H. Miwa, T. Cazati, F. E. G. Guimarães, R. M. Faria, and M. Veríssimo-Alves

Appl. Phys. Lett. 86, 141907 (2005); http://dx.doi.org/10.1063/1.1897847 (2 pages) | Cited 2 times

Online Publication Date: 31 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have performed an experimental study of the anomalous increase of the gap energy (Egap) in stretched Teflon∕poly (p-phenylene vinylene) films. Photoluminescence experiments, show that Egap initially undergoes an increase and then a decrease, as the film is stretched further. Polarized absorbance experiments reveal orientational ordering of chains with the stretching.
Show PACS
78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
78.55.Qr Amorphous materials; glasses and other disordered solids
71.38.-k Polarons and electron-phonon interactions

Band-gap discontinuity in GaN0.02As0.87Sb0.11/GaAs single-quantum wells investigated by photoreflectance spectroscopy

R. Kudrawiec, K. Ryczko, J. Misiewicz, H. B. Yuen, S. R. Bank, M. A. Wistey, H. P. Bae, and James S. Harris

Appl. Phys. Lett. 86, 141908 (2005); http://dx.doi.org/10.1063/1.1897849 (3 pages)

Online Publication Date: 31 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
GaN0.02As0.87Sb0.11/GaAs single-quantum wells have been investigated by photoreflectance (PR) at room temperature. PR features related to the ground and excited state transitions have been clearly observed. The experimental data have been compared with the calculations in the envelope function formalism taking account the effect of strain. The band gap lowering and the increase in the electron effective mass due to the incorporation of nitrogen atoms into GaAsSb have been included. Excellent agreement between experimental data and calculation results have been found for band structure Type-I with the conduction-band offset ratio of 50%.
Show PACS
73.21.Fg Quantum wells
78.67.De Quantum wells
73.20.At Surface states, band structure, electron density of states
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor

Oxygen tracer diffusion in Pb(Zr,Ti)O3 thin film enhanced by catalytic platinum

J. S. Cross, K. Kurihara, N. Kamehara, H. Haneda, and I. Sakaguchi

Appl. Phys. Lett. 86, 141909 (2005); http://dx.doi.org/10.1063/1.1897054 (3 pages) | Cited 3 times

Online Publication Date: 31 March 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The self-diffusion of math into Pb(Zr,Ti)O3 [PZT] thin films on Pt/TiO2 coated Si wafers from an ambient of 99% math gas tracer was investigated by secondary ion mass spectroscopy (SIMS) when annealed at 450 °C, 550 °C, and 650 °C for up to 30 min. The results show that the math profile in PZT changed significantly with anneal temperature and the highest concentration of exchanged oxygen was at the PZT/Pt interface when annealed at 650 °C. Modeling of the oxygen tracer diffusion profiles from the 450 °C and 550 °C data yielded an activation energy of 0.83 eV when assuming 1D diffusion. Simulation of the 650 °C SIMS data indicated that the oxygen was dissociating on the catalytic Pt film underneath the PZT and then back diffusing into the PZT causing a higher concentration of oxygen at the PZT/Pt interface than at the surface.
Show PACS
82.45.Mp Thin layers, films, monolayers, membranes
82.45.Jn Surface structure, reactivity and catalysis

Aluminum nanoscale order in amorphous Al92Sm8 measured by fluctuation electron microscopy

W. G. Stratton, J. Hamann, J. H. Perepezko, P. M. Voyles, X. Mao, and S. V. Khare

Appl. Phys. Lett. 86, 141910 (2005); http://dx.doi.org/10.1063/1.1897830 (3 pages) | Cited 38 times

Online Publication Date: 1 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Fluctuation electron microscopy (FEM) measurements and simulations have identified nanoscale aluminum-like medium-range order in rapidly quenched amorphous Al92Sm8 which devitrifies by primary Al crystallization. Al92Sm8 amorphized by plastic deformation shows neither Al nanoscale order, nor primary crystallization. Annealing the rapidly quenched material below the primary crystallization temperature reduces the degree of nanoscale Al order measured by FEM. The FEM measurements suggest that 10–20 Å diameter regions with Al crystal-like order are associated with primary crystallization in amorphous Al92Sm8, which is consistent with the quenched-in cluster model of primary crystallization.
Show PACS
81.05.Kf Glasses (including metallic glasses)
61.43.Fs Glasses
64.70.K- Solid-solid transitions
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Gh Other heat and thermomechanical treatments
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
68.37.Lp Transmission electron microscopy (TEM)

Free-standing silica film containing Si nanocrystals: Photoluminescence, Raman scattering, optical waveguiding, and laser-induced thermal effects

Leonid Khriachtchev, Markku Räsänen, and Sergei Novikov

Appl. Phys. Lett. 86, 141911 (2005); http://dx.doi.org/10.1063/1.1899257 (3 pages) | Cited 15 times

Online Publication Date: 1 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A Raman and photoluminescence study of a thermally annealed free-standing film of silica containing Si nanocrystals is reported. The laser-induced thermal effects are observed, including the increase of the absorption coefficient and the strongly nonlinear rise of the light emission. The light emission measured at high excitation powers is probably blackbody radiation, and the Raman measurements confirm high laser-induced temperatures. The Ar+ laser annealing strongly increases the crystalline Raman peak showing that thermal annealing at 1150 °C does not finish structural reorganization of the SiOx material. In the waveguiding detection geometry, the spectral narrowing of the photoluminescence is observed.
Show PACS
78.66.Db Elemental semiconductors and insulators
78.55.Ap Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
61.72.Cc Kinetics of defect formation and annealing
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Fk Semiconductors
61.82.Rx Nanocrystalline materials

Infrared dielectric function of wurtzite aluminum nitride

W. J. Moore, J. A. Freitas, R. T. Holm, O. Kovalenkov, and V. Dmitriev

Appl. Phys. Lett. 86, 141912 (2005); http://dx.doi.org/10.1063/1.1899233 (3 pages) | Cited 11 times

Online Publication Date: 1 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The infrared dielectric function of wurtzite AlN has been determined by fitting an analytic Lorentzian dielectric function to experimentally observed interference fringes in infrared transmission. The analytic model is scaled to agree with recent measurements of the visible refractive index, and the experiment and model extend to the submillimeter range of the infrared. A complete, experimentally verified dielectric function is found from the visible to the submillimeter spectral region for radiation with E⊥c axis, and an analytic model is produced for E‖c axis. Refractive indices and extinction coefficients from the visible to zero frequency are presented.
Show PACS
78.66.Fd III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.40.Fy Semiconductors
78.20.Fm Birefringence

Surface treatment for the atomic layer deposition of HfO2 on silicon

J-F. Damlencourt, O. Renault, F. Martin, M-N. Séméria, T Billon, and F. Bedu

Appl. Phys. Lett. 86, 141913 (2005); http://dx.doi.org/10.1063/1.1899237 (3 pages) | Cited 7 times

Online Publication Date: 1 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The atomic layer deposition (ALD) of HfO2 on silicon with a Cl2 surface treatment is investigated by physicochemical and electrical techniques. The specificity of this treatment is to create, on a HF-dipped silicon surface, the nucleation sites necessary for the ALD growth. The growth rates obtained by spectroscopic ellipsometry and total x-ray fluorescence spectroscopy indicate that the nucleation sites (i.e., the –OH groups), which are necessary to perform some bidimensional ALD growth, are generated during this surface treatment. After deposition of thin HfO2 layers (from a few monolayers up to 8.7 nm), a very thin parasitic SiOx layer, underneath 1 monolayer of Hf silicate, is observed by x-ray photoelectron spectroscopy. Nevertheless, an equivalent oxide thickness of 1.1 nm is obtained with an as-deposited 3.7 nm thick HfO2 layer.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.Cf Surface cleaning, etching, patterning
68.55.A- Nucleation and growth
79.60.Dp Adsorbed layers and thin films
82.80.Ej X-ray, Mössbauer, and other γ-ray spectroscopic analysis methods
68.55.-a Thin film structure and morphology
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close