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11 Apr 2005

Volume 86, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 152101 (2005); http://dx.doi.org/10.1063/1.1897831 (3 pages)

Walid Hafez and Milton Feng
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Intensity-modulated blue light generated by frequency doubling of wavelength-modulated high-power diode-laser radiation

Dirk Woll, Marc A. Tremont, Harry Fuchs, Oliver Casel, and Richard Wallenstein

Appl. Phys. Lett. 86, 151101 (2005); http://dx.doi.org/10.1063/1.1899234 (3 pages) | Cited 1 time

Online Publication Date: 4 April 2005

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A scheme for the generation of modulated blue laser radiation is demonstrated. The 923 nm radiation of a high-power diode-laser master-oscillator power-amplifier system is wavelength modulated within a range of 0.2 nm by modulating the injection current of the distributed feedback (DFB) diode oscillator. Single-pass frequency doubling of the generated radiation in periodically poled potassium titanyl phospate converts the wavelength modulation into an intensity modulation with a contrast ratio exceeding 700:1. The 3 dB modulation bandwidth of 35 kHz is limited by the speed of the wavelength tuning of the DFB oscillator.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.79.Hp Optical processors, correlators, and modulators
42.79.Nv Optical frequency converters
84.30.Ng Oscillators, pulse generators, and function generators
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Subpicosecond optical switching in polystyrene opal

Yuanhao Liu, Xiaoyong Hu, Dongxiang Zhang, Bingying Cheng, Daozhong Zhang, and Qingbo Meng

Appl. Phys. Lett. 86, 151102 (2005); http://dx.doi.org/10.1063/1.1888052 (3 pages) | Cited 28 times

Online Publication Date: 4 April 2005

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An ultrafast all-optical switching is demonstrated in an organic three-dimensional nonlinear photonic crystal with a response time as short as 120 fs. The operating wavelength of the optical switching is in the visible spectrum. The switching function is realized by a shift of the photonic band gap under optical pumping. It is found that the photonic band gap shifts about 10 nm with the excitation of 27.5 GW/cm2 pump laser.
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42.70.Jk Polymers and organics
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.Qs Photonic bandgap materials
42.70.Mp Nonlinear optical crystals
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Laser stimulated radiative attachment

B. A. Zon

Appl. Phys. Lett. 86, 151103 (2005); http://dx.doi.org/10.1063/1.1897848 (2 pages) | Cited 1 time

Online Publication Date: 6 April 2005

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A mechanism for molecular negative ion (anion) formation under irradiation of neutral molecules by synchronized laser and electron pulses is considered. Numerical estimates are obtained for the efficiency of this process in cases of valence-bound and dipole-bound anions. The proposed mechanism allows, in principle, one to detect molecules with their absolute concentration at the level of ∼ 106 cm−3 corresponding to a relative concentration of ∼ 10−13 under atmospheric pressure.
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34.80.Lx Recombination, attachment, and positronium formation
33.80.Eh Autoionization, photoionization, and photodetachment
33.15.Ta Mass spectra
34.80.Gs Molecular excitation and ionization

Tuning and tailoring of broadband quantum-well infrared photodetector responsivity spectrum

S. V. Bandara, S. D. Gunapala, J. K. Liu, S. B. Rafol, C. J. Hill, D. Z.-Y. Ting, J. M. Mumolo, T. Q. Trinh, J. M. Fastenau, and A. W. K. Liu

Appl. Phys. Lett. 86, 151104 (2005); http://dx.doi.org/10.1063/1.1900313 (3 pages) | Cited 9 times

Online Publication Date: 6 April 2005

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The spectral response of quantum-well infrared photodetectors (QWIPs) based on the III-V material system are tailorable to narrow or broad bandwidths within mid- and long-wavelength infrared bands. Typical broad-band QWIPs show considerable spectral shape change with bias voltage, particularly near the cut-off wavelength region. Two alternatives to the typical broadband QWIP design have been demonstrated. These designs consist of two multiquantum-well (QW) stacks or alternatively placed QWs and produce nearly fixed spectrums within the operating bias voltages. Flexibility in many design parameters of these detectors allows for tuning and tailoring the spectral shape according to application requirements, specifically for spectral imaging instruments.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Realization of inverse saturable absorption by intracavity third-harmonic generation for efficient nonlinear mirror mode-locking

P. K. Datta, S. Mukhopadhyay, G. K. Samanta, S. K. Das, and A. Agnesi

Appl. Phys. Lett. 86, 151105 (2005); http://dx.doi.org/10.1063/1.1899235 (3 pages) | Cited 2 times

Online Publication Date: 6 April 2005

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A technique of suppressing passive Q-switching by inverse saturable absorption in a cw nonlinear mirror mode-locked laser is presented. The nonlinear mirror saturable absorber consists of a second-harmonic generation crystal and a dichroic mirror while the inverse saturable loss is realized by intracavity third-harmonic generation. The inverse saturation reduces significantly the critical intracavity pulse energy for stable, self-starting, self-sustained, and power scalable cw mode-locking. Two LiB3O5 crystals are employed to realize the technique in a diode array pumped Nd:YVO4 oscillator providing a peak power of 918 W, pulse width of 29 ps, and repetition rate of 170 MHz.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
42.60.Fc Modulation, tuning, and mode locking
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes

Optical loss and lasing characteristics of high-quality-factor AlGaAs microdisk resonators with embedded quantum dots

Kartik Srinivasan, Matthew Borselli, Thomas J. Johnson, Paul E. Barclay, Oskar Painter, Andreas Stintz, and Sanjay Krishna

Appl. Phys. Lett. 86, 151106 (2005); http://dx.doi.org/10.1063/1.1901810 (3 pages) | Cited 42 times

Online Publication Date: 6 April 2005

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Optical characterization of AlGaAs microdisk resonant cavities with a quantum dot active region is presented. Direct passive measurement of the optical loss within AlGaAs microdisk resonant structures embedded with InAs/InGaAs dots-in-a-well (DWELL) is performed using an optical-fiber-based probing technique at a wavelength (λ ∼ 1.4 μm) that is red detuned from the dot emission wavelength (λ ∼ 1.2 μm). Measurements in the 1.4 μm wavelength band on microdisks of diameter D = 4.5 μm show that these structures support modes with cold-cavity quality factors as high as 3.6×105. DWELL-containing microdisks are then studied through optical pumping at room temperature. Pulsed lasing at λ ∼ 1.2 μm is seen for cavities containing a single layer of InAs dots, with threshold values of ∼ 17 μW, approaching the estimated material transparency level. Room-temperature continuous-wave operation is also observed.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Effects of light illumination on field emission from CuO nanobelt arrays

Jun Chen, N. Y. Huang, S. Z. Deng, J. C. She, N. S. Xu, Weixin Zhang, Xiaogang Wen, and Shihe Yang

Appl. Phys. Lett. 86, 151107 (2005); http://dx.doi.org/10.1063/1.1901811 (3 pages) | Cited 15 times

Online Publication Date: 6 April 2005

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Effects of pulsed and continuous light illumination on field emission from CuO nanobelt arrays have been studied by using a transparent anode technique. It is found that, at low-field emission current level, the field emission current generally increases under a pulsed irradiation; at an emission current level of 1.1 μA, a 19% increase in emission current was recorded. The photoinduced current increase is reduced with increasing emission current and is undetectable when the emission current is higher than 15 μA. On the other hand, a long time illumination of the sample decreases the field emission current. Possible physical mechanisms behind the observed phenomena are discussed.
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79.70.+q Field emission, ionization, evaporation, and desorption
61.82.Fk Semiconductors
61.82.Rx Nanocrystalline materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Continuous-wave laser oscillation at 1.3 μm in Nd:YAG proton-implanted planar waveguides

M. Domenech, G. V. Vázquez, E. Flores-Romero, E. Cantelar, and G. Lifante

Appl. Phys. Lett. 86, 151108 (2005); http://dx.doi.org/10.1063/1.1899240 (3 pages) | Cited 23 times

Online Publication Date: 6 April 2005

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This work reports continuous laser oscillation around 1.3 μm at room temperature in Nd:YAG planar waveguides fabricated by MeV proton implantation. The performance of the waveguide lasers fabricated with different implantation parameters has been studied in terms of the threshold pump powers and slope efficiencies. These results have been compared with those obtained in Nd:YAG waveguide lasers operating at a wavelength of 1.06 μm, taking into account the different emission cross-sectional values of the math→math and math→math transitions.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Rn Relaxation oscillations and long pulse operation
61.72.up Other materials

High-efficiency diffractive x-ray optics from sectioned multilayers

H. C. Kang, G. B. Stephenson, C. Liu, R. Conley, A. T. Macrander, J. Maser, S. Bajt, and H. N. Chapman

Appl. Phys. Lett. 86, 151109 (2005); http://dx.doi.org/10.1063/1.1897061 (3 pages) | Cited 12 times

Online Publication Date: 6 April 2005

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We investigate the diffraction properties of sectioned multilayers in Laue (transmission) geometry, at hard x-ray energies (9.5 and 19.5 keV). Two samples are studied, a W/Si multilayer of 200×(29 nm) periods, and a Mo/Si multilayer of 2020×(7 nm) periods, with cross-section depths ranging from 2 to 17 μm. Reflectivities as high as 70% are observed. This exceeds the theoretical limit for standard zone plates operating in the multibeam regime, demonstrating that all of the intensity can be directed into a single diffraction order in small-period structures.
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78.70.Ck X-ray scattering
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Ultrafast double-pulse ablation of fused silica

Ihtesham H. Chowdhury, Xianfan Xu, and Andrew M. Weiner

Appl. Phys. Lett. 86, 151110 (2005); http://dx.doi.org/10.1063/1.1901806 (3 pages) | Cited 17 times

Online Publication Date: 6 April 2005

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Ultrafast pump-probe experiments were used to study high-intensity ultrafast pulse-ablation dynamics in fused silica. Two laser pulses with varied time delay and pulse energy were used to irradiate fused silica samples and observe the transient reflectivity and transmissivity of the probe pulse. It was seen that the probe reflectivity initially increased due to the formation of free-electron plasma and then dropped to a low value within a period of about 10 ps caused by a rapid structural change at the surface. The time-resolved measurements of reflectivity and transmissivity were also related to atomic force microscopy measurements of the depth of the laser-ablated hole. It was seen that the depth peaked at zero delay between the pulses and decreased within a period of about 1 ps as the temporal separation between the pulses was increased caused by the screening by the plasma produced by the first pulse. When the temporal separation is about 100 ps or longer, evidence for melting and resolidification during double-pulse ablation was also observed in the form of ridges at the circumference of the ablated holes.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.47.-p Spectroscopy of solid state dynamics
61.82.Ms Insulators
64.70.D- Solid-liquid transitions
81.30.Fb Solidification
68.37.Ps Atomic force microscopy (AFM)

1.5 μm room-temperature emission of square-lattice photonic-crystal waveguide lasers with a single line defect

X. Checoury, P. Boucaud, J.-M. Lourtioz, O. Gauthier-Lafaye, S. Bonnefont, D. Mulin, J. Valentin, F. Lozes-Dupuy, F. Pommereau, C. Cuisin, E. Derouin, O. Drisse, L. Legouezigou, F. Lelarge, F. Poingt, et al.

Appl. Phys. Lett. 86, 151111 (2005); http://dx.doi.org/10.1063/1.1905810 (3 pages) | Cited 6 times

Online Publication Date: 7 April 2005

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Narrow waveguides consisting of a single defect-line (W1) in a square lattice photonic crystal are fabricated on InP using the substrate approach. A single-mode distributed-feedback laser emission is obtained under optical pumping at room temperature. Lasing occurs at the second folding point of the dispersion curve of the fundamental waveguide mode (wave vector k = 0). The emitted wavelength ranges from 1420 to 1580 nm for a lattice period varying from 460 to 520 nm and a constant air filling factor of ∼ 26%. The highly monomode behavior is explained using two-dimensional plane-wave models. Similar experiments conducted on triangular lattice W1 waveguides do not yield a laser emission. Three-dimensional simulations confirm that triangular lattice W1 waveguides suffer higher losses than their square homologues.
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42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Measurement of the phase shift upon reflection from photonic crystals

Emanuel Istrate and Edward H. Sargent

Appl. Phys. Lett. 86, 151112 (2005); http://dx.doi.org/10.1063/1.1905812 (3 pages) | Cited 13 times

Online Publication Date: 7 April 2005

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The phase dependence of light reflected from colloidal photonic crystals is measured using a large resonant cavity and self-assembled colloidal photonic crystals. We measure the expected phase shift upon reflection from the photonic crystal, which varies from 0 to 180 deg across the photonic crystal stop band. These measurements are then fed directly into the design of photonic crystal cavities. We obtain a measure for the precision needed in the fabrication of photonic crystal resonant cavities.
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42.70.Qs Photonic bandgap materials
42.25.Gy Edge and boundary effects; reflection and refraction

Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition

M. Scharrer, X. Wu, A. Yamilov, H. Cao, and R. P. H. Chang

Appl. Phys. Lett. 86, 151113 (2005); http://dx.doi.org/10.1063/1.1900957 (3 pages) | Cited 57 times

Online Publication Date: 7 April 2005

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We have fabricated three-dimensional optically active ZnO photonic crystals by infiltrating polystyrene opal templates using a low-temperature atomic layer deposition process. The polystyrene is removed by firing the samples at elevated temperatures, and reactive ion etching is used to remove the top layer of ZnO and expose the (111) photonic crystal surface. The resulting structures have high filling fractions, possess photonic band gaps in the near-UV to visible spectrum, and exhibit efficient photoluminescence.
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81.05.Dz II-VI semiconductors
42.70.Qs Photonic bandgap materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.A- Nucleation and growth
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.65.Cf Surface cleaning, etching, patterning
68.55.-a Thin film structure and morphology

Imaging with short-wavelength surface plasmon polaritons

Anatoly V. Zayats, Jill Elliott, Igor I. Smolyaninov, and Christopher C. Davis

Appl. Phys. Lett. 86, 151114 (2005); http://dx.doi.org/10.1063/1.1899747 (3 pages) | Cited 8 times

Online Publication Date: 7 April 2005

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Operation and imaging principles of optical microscope with in-plane image magnification by surface plasmon polaritons are discussed. The influence of realistic experimental geometry and losses in the metal are considered. Using two-dimensional optics of surface polaritons on metal–dielectric interface, subwavelength optical resolution can be achieved with long-wave-vector surface polaritons and applied in far-field optical microscopy and photolithography.
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07.60.Pb Conventional optical microscopes
78.68.+m Optical properties of surfaces
42.30.Va Image forming and processing
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Tunable gap in the transmission spectrum of a periodic waveguide

Victor A. Pogrebnyak, Eser Akray, and A. Neşet Küçükaltun

Appl. Phys. Lett. 86, 151115 (2005); http://dx.doi.org/10.1063/1.1905804 (3 pages) | Cited 2 times

Online Publication Date: 8 April 2005

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Wave phenomena in a planar periodically corrugated waveguide are investigated experimentally at the microwave range of frequency. Measurements of the transmission properties show that the location of the gap in the frequency spectrum as well as its width depends on the relative position of two corrugated plates. The transmission varies from zero to a maximum value upon a shift of one periodic plate with respect to another on the half period of the corrugation. The results confirm the theoretical prediction of the geometry-driven spectrum transformation from a band-structure form to a gapless one upon such a shift of the plates. In physics of solids, this transformation corresponds to metal–insulator transition.
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42.79.Gn Optical waveguides and couplers

Cross-gain modulation in broad-area vertical-cavity semiconductor optical amplifier

Francesco Marino, Luca Furfaro, and Salvador Balle

Appl. Phys. Lett. 86, 151116 (2005); http://dx.doi.org/10.1063/1.1905811 (3 pages) | Cited 4 times

Online Publication Date: 8 April 2005

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We demonstrate that broad-area vertical-cavity semiconductor optical amplifiers allow for wavelength conversion at 2.5 Gb/s via cross-gain modulation (XGM). XGM is reached with a saturation beam of only 1.5 mW over an optical bandwidth of 0.7 nm (215 GHz). Depending on the wavelengths of the injected fields, inverted or noninverted output can be obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking

Pretransitional enhancement of the optical nonlinearity of thin dye-doped liquid crystals in the nematic phase

L. Lucchetti, M. Gentili, and F. Simoni

Appl. Phys. Lett. 86, 151117 (2005); http://dx.doi.org/10.1063/1.1905796 (3 pages) | Cited 5 times

Online Publication Date: 8 April 2005

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We report a critical enhancement of the nonlinear optical response of dye-doped liquid crystals obtained by approaching the clearing point in the nematic phase. The enhancement of the nonlinear diffraction efficiency has been measured in the range 0.2–0.3 deg below the nematic-isotropic transition temperature. It allows reaching a nonlinear refractive index higher than 40 cm2/W in all the tested cells.
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42.70.Mp Nonlinear optical crystals
42.70.Df Liquid crystals
42.65.-k Nonlinear optics
64.70.M- Transitions in liquid crystals
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

High-efficiency 1.3 μm InGaAs/GaAs quantum-dot microcavity light-emitting diodes grown by metalorganic chemical vapor deposition

M. T. Todaro, V. Tasco, M. De Giorgi, L. Martiradonna, G. Rainò, M. De Vittorio, A. Passaseo, and R. Cingolani

Appl. Phys. Lett. 86, 151118 (2005); http://dx.doi.org/10.1063/1.1898440 (3 pages) | Cited 2 times

Online Publication Date: 8 April 2005

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We investigate the optical properties of quantum-dot (QD) microcavity light-emitting diodes (MCLED) operating at 1.3 μm at room temperature. The active medium consists of a single layer of InGaAs quantum dots, directly grown in a GaAs matrix by metalorganic chemical vapor deposition. Electrical injected QD MCLEDs were fabricated by exploiting a hybrid technology, which employs epitaxial and oxide-based mirrors. Such technology allows us to preserve the QD properties and leads to a wider optical bandwidth of the hybrid top distributed Bragg reflector with respect to the fully epitaxial mirror, resulting in photon recycling of the overall QDs spectrum, thus improving the efficiency of the device. The devices exhibit bright electroluminescence peaked at 1.29 μm, with a full width at half maximum of 10 meV. The room-temperature external quantum efficiency of such devices is 0.52%, higher than that reported in the literature for QD MCLEDs operating at 1.3 μm at room temperature.
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85.60.Jb Light-emitting devices
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
78.67.Hc Quantum dots
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.60.Fi Electroluminescence

Cavity optimization of optically pumped broad-area microcavity lasers

S. Barbay, Y. Ménesguen, I. Sagnes, and R. Kuszelewicz

Appl. Phys. Lett. 86, 151119 (2005); http://dx.doi.org/10.1063/1.1905781 (3 pages) | Cited 6 times

Online Publication Date: 8 April 2005

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We demonstrate a cavity optimization method for efficient optical pumping of a semiconductor microcavity. An enhanced pumping efficiency makes it possible to pump broad-area microcavities for, e.g., high-power lasers or parallel optical processing of information. This is especially important in the near-infrared where a pump not absorbed into the active material is absorbed into the substrate and converted into heat. We apply the method to optical pumping of a 80 μm diameter laser with a spatially uniform pump profile. This method could also prove useful for the design of vertical external cavity surface emitting lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Sa Microcavity and microdisk lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Effects of thermal annealing on the band gap of GaInAsSb

Oliver Dier, Susanne Dachs, Markus Grau, Chun Lin, Christian Lauer, and Markus-Christian Amann

Appl. Phys. Lett. 86, 151120 (2005); http://dx.doi.org/10.1063/1.1900946 (3 pages) | Cited 10 times

Online Publication Date: 8 April 2005

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In this Letter, the thermal stability of GaInAsSb grown by molecular-beam epitaxy was investigated. We found a strong blueshift for both bulk material and multiple-quantum-well (MQW) structures caused by thermal annealing. The shift is almost independent of design parameters such as indium concentration, strain, and growth parameters such as temperature. For a 500‐nm-thick GaInAsSb bulk layer, a blueshift of 83 meV was found after annealing for 2 h at 520 °C, whereas for MQW structures the maximum shift was 61 meV.
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81.70.Pg Thermal analysis, differential thermal analysis (DTA), differential thermogravimetric analysis
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High-transmission electrowetting light valves

J. Heikenfeld and A. J. Steckl

Appl. Phys. Lett. 86, 151121 (2005); http://dx.doi.org/10.1063/1.1901816 (3 pages) | Cited 17 times

Online Publication Date: 8 April 2005

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High-efficiency spatial light modulation has been demonstrated for transmissive electrowetting (EW) light valves (ELVs). The ELV structure consists of a competitive oil/water-on-dielectric EW cell fabricated on an optically transparent substrate. ELVs are configured as display devices by attaching a diffuse backlight powered by white converted InGaN light emitting diodes. The oil film contains ∼ 1wt. % nonpolar organic chromophores which absorb with near-neutral optical density across the visible light spectrum. Using the EW effect, spatial light modulation is achieved as the water layer locally displaces the oil film. The transmissivity of the cell can be modulated from ∼ 5% (zero bias) to >80% ( ∼ 30 V). ELV switching speed depends on cell size, typically ∼ 10–100 ms for 1 and 3 mm2 cells. Additional optical enhancement can decrease the off-state ELV transmissivity to <1%.
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42.79.Kr Display devices, liquid-crystal devices
42.79.Hp Optical processors, correlators, and modulators

Highly sensitive fiber Bragg grating refractive index sensors

Wei Liang, Yanyi Huang, Yong Xu, Reginald K. Lee, and Amnon Yariv

Appl. Phys. Lett. 86, 151122 (2005); http://dx.doi.org/10.1063/1.1904716 (3 pages) | Cited 104 times

Online Publication Date: 8 April 2005

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We combine fiber Bragg grating (FBG) technology with a wet chemical etch-erosion procedure and demonstrate two types of refractive index sensors using single-mode optical fibers. The first index sensor device is an etch-eroded single FBG with a radius of 3 μm, which is used to measure the indices of four different liquids. The second index sensor device is an etch-eroded fiber Fabry-Pérot interferometer (FFPI) with a radius of ∼ 1.5 μm and is used to measure the refractive indices of isopropyl alcohol solutions of different concentrations. Due to its narrower resonance spectral feature, the FFPI sensor has a higher sensitivity than the FBG sensor and can detect an index variation of 1.4×10−5. Since we can measure the reflection signal, these two types of sensors can be fabricated at the end of a fiber and used as point sensors.
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42.81.Pa Sensors, gyros
42.79.Dj Gratings
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Waveguide dye laser including a SiO2 nanoparticle-dispersed random scattering active layer

Hirofumi Watanabe, Yuji Oki, Mitsuo Maeda, and Takashige Omatsu

Appl. Phys. Lett. 86, 151123 (2005); http://dx.doi.org/10.1063/1.1904717 (3 pages) | Cited 14 times

Online Publication Date: 8 April 2005

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We presented a dual-layered waveguide dye laser including a random active layer with nanoparticle doping. A slope efficiency of 12.0% and an energy threshold of 0.34 μJ were obtained in a single-longitudinal-mode operation.
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42.55.Mv Dye lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
61.72.up Other materials
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Production of atmospheric-pressure glow discharge in nitrogen using needle-array electrode

K. Takaki, M. Hosokawa, T. Sasaki, S. Mukaigawa, and T. Fujiwara

Appl. Phys. Lett. 86, 151501 (2005); http://dx.doi.org/10.1063/1.1905801 (3 pages) | Cited 17 times

Online Publication Date: 6 April 2005

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An atmospheric pressure glow discharge was generated using a needle-array electrode in nitrogen, and the voltage–current characteristics of the glow discharge were obtained in a range from 1 mA to 60 A. A pulsed high voltage with short rise time under 10 ns was employed to generate streamer discharges simultaneously at all needle tips. The large number of streamer discharges prevented the glow-to-arc transition caused by inhomogeneous thermalization. Semiconductor opening switch diodes were employed as an opening switch to shorten the rise time. The glow voltage was almost constant until the discharge current became 0.3 A, whereas the voltage increased with the current higher than 0.3 A. Electron density and temperature in a positive column of the glow discharge at 60 A were obtained to 1.4×1012 cm−3 and 1.3 eV from calculation based on nitrogen swarm data.
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52.80.Hc Glow; corona
52.50.-b Plasma production and heating
52.25.Fi Transport properties

Plasma-photocatalyst interaction: Production of oxygen atoms in a low pressure discharge

O. Guaitella, L. Gatilova, and A. Rousseau

Appl. Phys. Lett. 86, 151502 (2005); http://dx.doi.org/10.1063/1.1900314 (3 pages) | Cited 8 times

Online Publication Date: 6 April 2005

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Show Abstract
A pulsed dc low pressure discharge in air (210 Pa) is used to study the mechanisms of activation of a photocatalytic material (TiO2) under plasma exposure. It is first shown that the presence of TiO2 inside the plasma region leads to a strong increase of the reduced electric field. Time resolved measurement of the atomic oxygen density is performed by actinometry during a 10 ms pulse at a low repetition rate (1 Hz) with and without TiO2 pellets inside the plasma region. The presence of TiO2 pellets strongly increases the O atom density during the first millisecond, but this effect saturates for longer exposure times.
Show PACS
52.40.Hf Plasma-material interactions; boundary layer effects
82.50.Hp Processes caused by visible and UV light
82.33.Xj Plasma reactions (including flowing afterglow and electric discharges)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
78.47.-p Spectroscopy of solid state dynamics
52.80.-s Electric discharges
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