APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 86 / Issue 15 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 86, 152101 (2005); doi:10.1063/1.1897831 (3 pages)

Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

Walid Hafez and Milton Feng

Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 W. Green Street, Urbana, Illinois 61801

View MapView Map

(Received 23 December 2004; accepted 18 February 2005; published online 4 April 2005)

Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μm2 HBT achieves excellent ƒT values of 604 GHz (associated ƒMAX = 246 GHz) at a collector current density of 16.8 mA/μm2, with a dc gain of 65 and a breakdown voltage of BVCEO = 1.7 V.

© 2005 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor epitaxial layers, heterojunction bipolar transistors, current density, semiconductor device breakdown, interface states, microwave bipolar transistors

PACS

  • 85.30.Pq

    Bipolar transistors

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

  • 73.20.At

    Surface states, band structure, electron density of states

  • 84.40.-x

    Radiowave and microwave (including millimeter wave) technology

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.1897831

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Bardeen and W. H. Brattain, Phys. Rev. 74, 230 (1948).


For access to citing articles, you need to log in.


Figures (5)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz
  2. Photoconductivity from PbS-nanocrystal∕semiconducting polymer composites for solution-processible, quantum-size tunable infrared photodetectors
  3. Efficient black silicon solar cell with a density-graded nanoporous surface: Optical properties, performance limitations, and design rules
  4. In-plane and out-of-plane band-gap properties of a two-dimensional triangular polymer-based void channel photonic crystal
  5. A generic approach to nanocables via nanochannel-confined sequential electrodeposition
Go to AIP Home
Copyright © American Institute of Physics
close