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Applied Physics Letters / Volume 86 / Issue 15 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 86, 152101 (2005); http://dx.doi.org/10.1063/1.1897831 (3 pages)

Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

Walid Hafez and Milton Feng

Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 W. Green Street, Urbana, Illinois 61801

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(Received 23 December 2004; accepted 18 February 2005; published online 4 April 2005)

Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μm2 HBT achieves excellent ƒT values of 604 GHz (associated ƒMAX = 246 GHz) at a collector current density of 16.8 mA/μm2, with a dc gain of 65 and a breakdown voltage of BVCEO = 1.7 V.

© 2005 American Institute of Physics

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KEYWORDS and PACS

Keywords

indium compounds, gallium arsenide, III-V semiconductors, semiconductor epitaxial layers, heterojunction bipolar transistors, current density, semiconductor device breakdown, interface states, microwave bipolar transistors

PACS

  • 85.30.Pq

    Bipolar transistors

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

  • 73.20.At

    Surface states, band structure, electron density of states

  • 84.40.-x

    Radiowave and microwave (including millimeter wave) technology

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.1897831

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    J. Bardeen and W. H. Brattain, Phys. Rev. 74, 230 (1948).


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