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11 Apr 2005

Volume 86, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 86, 152101 (2005); http://dx.doi.org/10.1063/1.1897831 (3 pages)

Walid Hafez and Milton Feng
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Water-soluble polythiophene∕nanocrystalline TiO2 solar cells

Qiquan Qiao and James T. McLeskey

Appl. Phys. Lett. 86, 153501 (2005); http://dx.doi.org/10.1063/1.1900300 (3 pages) | Cited 56 times

Online Publication Date: 5 April 2005

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We report the characteristics of polymer∕nanocrystalline solar cells fabricated using an environmentally friendly water-soluble polythiophene and TiO2 in a bilayer configuration. The cells were made by dropping the polymer onto a TiO2 nanocrystalline film and then repeatedly sweeping a clean glass rod across the polymer as it dried. The devices showed an open circuit voltage of 0.81 V, a short circuit current density of 0.35 mA/cm2, a fill factor of 0.4, and an energy conversion efficiency of 0.13%. The water-soluble polythiophene showed significant photovoltaic behavior and the potential for use in solar cells.
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84.60.Jt Photoelectric conversion

Field emission characteristics of a tungsten microelectromechanical system device

D. Cruz, J. P. Chang, and M. G. Blain

Appl. Phys. Lett. 86, 153502 (2005); http://dx.doi.org/10.1063/1.1875756 (3 pages) | Cited 7 times

Online Publication Date: 5 April 2005

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We have investigated the field emission properties of free-hanging tungsten microelectromechanical system structures. These tungsten structures are designed to serve as electrodes in a Paul ion trap. Since the outer edges of the trap end cap electrodes are adjacent to the inner edges of the trap ring electrode and approximately 0.5 μm apart, field emission may occur between these two edges when hundreds of volts are applied, thereby defining an edge field emitter. The arrays were tested under vacuum (10−5 Torr) and at atmospheric pressure (625 Torr) to understand the field emission behavior. Vacuum tests show turn-on voltages of about 200 V for the 1 and 1.5 μm radius traps and currents of ∼ 80 nA for both sizes of trap with the largest array (106) at 6 MV/cm. The atmospheric tests showed lower turn-on voltages of approximately 150 V for both the 1 and 1.5 μm radius traps. Currents up to a few μA were achieved at 6 MV/cm for smaller trap size (1 μm) in the largest array indicating a gas ionization contribution. The measured current-voltage responses fitted the Fowler–Nordheim characteristics well, confirming that the current increase in vacuum was due to field emission. A stable emission current of 2.03 nA was obtained at 10 MV/cm for 11 min.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
85.45.Db Field emitters and arrays, cold electron emitters
07.10.Cm Micromechanical devices and systems
79.70.+q Field emission, ionization, evaporation, and desorption

Electrical properties of plasma display panel with Mg1−xZnxO protecting thin films deposited by a radio frequency magnetron sputtering method

E. Y. Jung, S. G. Lee, S. H. Sohn, D. K. Lee, and H. K. Kim

Appl. Phys. Lett. 86, 153503 (2005); http://dx.doi.org/10.1063/1.1899238 (3 pages) | Cited 16 times

Online Publication Date: 6 April 2005

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In order to improve the material properties of the protective layer for alternating current plasma display panels, a small amount of ZnO was added to the MgO protective layer. The electrical properties and the surface characteristics of the Mg1−xZnxO films, deposited by a radio frequency magnetron sputtering method, were investigated. As the concentration of ZnO increases, the crystallinity of Mg1−xZnxO thin films improves and the grain size becomes larger. The firing and the sustaining voltages of panels with the Mg1−xZnxO protective layers, when the concentration of ZnO was 0.5 at. %, was reduced by 20 V, compared with the conventional panels with the MgO protective layers. It was also found that the panels with Mg1−xZnxO protective layers show the higher discharge intensity as the ZnO content increases at the same applied voltages, compared with panels with the conventional MgO protective layers.
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52.75.-d Plasma devices
85.60.Pg Display systems

Thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy

Shigeo Yamaguchi, Yoshihito Nagawa, Nakaba Kaiwa, and Atsushi Yamamoto

Appl. Phys. Lett. 86, 153504 (2005); http://dx.doi.org/10.1063/1.1901813 (3 pages) | Cited 5 times

Online Publication Date: 6 April 2005

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We studied the thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy targeting a thermoelectric device with a high electron mobility. For InSb on sapphire, the maximum power factor (Pf) was 3.5×10−3 W/mK at 723 K, and for InSb on SiO2 glass, the maximum Pf was 2.4×10−3 W/mK at 723 K. For Ga0.03In0.97Sb on sapphire, the maximum Pf was 2.5×10−3 W/mK at 723 K, and for Ga0.03In0.97Sb on SiO2 glass, the maximum Pf was 3.4×10−3 W/mK at 723 K.
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73.61.Ey III-V semiconductors
73.50.Lw Thermoelectric effects
73.50.Dn Low-field transport and mobility; piezoresistance

Efficient organic light-emitting diodes with phosphorescent platinum complexes containing N∧C∧N-coordinating tridentate ligand

Wataru Sotoyama, Tasuku Satoh, Norio Sawatari, and Hiroshi Inoue

Appl. Phys. Lett. 86, 153505 (2005); http://dx.doi.org/10.1063/1.1901826 (3 pages) | Cited 34 times

Online Publication Date: 6 April 2005

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We describe the phosphorescent characteristics of two platinum complexes containing an N∧C∧N-coordinating tridentate ligand: platinum(II) 3,5-di(2-pyridyl)toluene chloride [Pt(dpt)Cl] and a newly synthesized platinum(II) 3,5-di(2-pyridyl)toluene phenoxide [Pt(dpt)(oph)], together with the performance of organic light-emitting diodes (OLEDs) prepared with these complexes as phosphors. Films containing each one of the complexes in a 4,4’-N,N’-dicalbazolylbiphenyl (CBP) host showed highly efficient photoluminescence. The fabricated OLEDs exhibited high efficiencies; the maximum external quantum efficiency of the device with Pt(dpt)(oph) phosphor after correction of angular dependence of emission was found to be 16.5%. The luminance half decay time of the Pt(dpt)(oph) device under a constant-current operation was considerably longer than that of the Pt(dpt)Cl device.
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85.60.Jb Light-emitting devices
78.55.Kz Solid organic materials

Distance control for a near-field scanning microwave microscope in liquid using a quartz tuning fork

Songhui Kim, Hyunjun Yoo, Kiejin Lee, Barry Friedman, Mariafrancis A. Gaspar, and Rastislav Levicky

Appl. Phys. Lett. 86, 153506 (2005); http://dx.doi.org/10.1063/1.1904713 (3 pages) | Cited 7 times

Online Publication Date: 6 April 2005

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We demonstrate a scanning near-field microwave microscope (NSMM) in the liquid environment using a tuning fork shear-force feedback method to control the distance between tip and sample. Only the probe tip for the NSMM is immersed in water. The dry part of the probe is attached to one prong of a quartz tuning fork and directly coupled to a high-quality dielectric resonator at an operating frequency f = 4.5–5.5 GHz. This distance control method is independent of the local microwave characteristics. The amplitude of the tuning fork was used as a set point of the distance control parameter in the liquid. To demonstrate the distance regulation system, we present the NSMM images of a copper film in air and liquid without and with readjustment of the distance set point, as well as an image of a DNA film in buffer solution. Imaging under buffer environments is of particular interest for future studies of biomolecular association reactions on solid supports.
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07.79.Fc Near-field scanning optical microscopes
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment
68.37.Uv Near-field scanning microscopy and spectroscopy
87.14.G- Nucleic acids
87.64.mt Near-field scanning
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Multiple junction biasing of superconducting tunnel junction detectors

K. Segall, J. J. Mazo, and T. P. Orlando

Appl. Phys. Lett. 86, 153507 (2005); http://dx.doi.org/10.1063/1.1890467 (3 pages) | Cited 1 time

Online Publication Date: 7 April 2005

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We describe a biasing scheme for single-photon detectors based on superconducting tunnel junctions. It replaces a single detector junction with a circuit of three junctions and achieves biasing of a detector junction at subgap currents without the use of an external magnetic field. This potentially increases the capability of these types of detectors and eases constraints in making large arrays. The biasing occurs through the nonlinear interaction of the three junctions, which we demonstrate through numerical simulation. This nonlinear state is numerically stable against external fluctuations and is compatible with high-fidelity electrical readout of the photon-induced current.
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85.25.Oj Superconducting optical, X-ray, and γ-ray detectors (SIS, NIS, transition edge)
85.25.Am Superconducting device characterization, design, and modeling
74.50.+r Tunneling phenomena; Josephson effects
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Flexible top-emitting electroluminescent devices on polyethylene terephthalate substrates

Yanqing Li, Li-Wei Tan, Xiao-Tao Hao, Kian Soo Ong, Furong Zhu, and Liang-Sun Hung

Appl. Phys. Lett. 86, 153508 (2005); http://dx.doi.org/10.1063/1.1900940 (3 pages) | Cited 37 times

Online Publication Date: 7 April 2005

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An aluminum-laminated polyethylene terephthalate (Al-PET) is used as the substrate for flexible organic light-emitting devices (OLEDs). The efficient flexible electroluminescent devices have a top-emitting OLED architecture. An acrylic layer is formed on the Al-PET surface to improve the surface morphology and also the adhesion between the substrate and the anode. Poly(styrene sulfonate)-doped poly(3,4-ethylene dioxythiophene) was used as hole transporting layer. The light-emitting polymer used is a phenyl-substituted poly(p-phenylenevinylene). Bilayer anodes of Ag/CFX and Ag/indium-tin oxide and a semitransparent top cathode were used for the flexible polymer OLEDs. For a flexible polymer OLED with a 110-nm-thick light-emitting polymer, it exhibited superior electrical and optical characteristics with a luminous efficiency of 4.56 cd/A at an operating voltage of 7.5 V.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.41.+e Polymers, elastomers, and plastics
68.55.-a Thin film structure and morphology
82.35.Gh Polymers on surfaces; adhesion
68.35.Np Adhesion

Direct observation of a frozen junction in polymer light-emitting electrochemical cells

Justin Dane, Corey Tracy, and Jun Gao

Appl. Phys. Lett. 86, 153509 (2005); http://dx.doi.org/10.1063/1.1900943 (3 pages) | Cited 20 times

Online Publication Date: 7 April 2005

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Doping propagation in polymer light-emitting electrochemical cells (LECs) has been studied based on the direct imaging of extremely large planar LECs at various temperatures and driving voltages. In situ electrochemical p doping, manifested as strong photoluminescence quenching in the polymer film, propagates at a nearly constant rate from anode toward cathode until it encounters an n-doped region to form a p-n junction. The propagation rate is found to be proportional to the applied bias at a fixed temperature. At a fixed bias, the propagation rate has a superexponential dependence on temperature. Below the glass transition temperature (Tg), the propagation rate becomes negligible, and a frozen junction has been confirmed by direct imaging of the doping profiles.
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82.47.Jk Photoelectrochemical cells, photoelectrochromic and other hybrid electrochemical energy storage devices
85.60.Jb Light-emitting devices
78.66.Qn Polymers; organic compounds
78.55.Kz Solid organic materials
78.55.Qr Amorphous materials; glasses and other disordered solids
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.72.S- Impurities in crystals
61.72.up Other materials
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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