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11 Apr 2005

Volume 86, Issue 15, Articles (15xxxx)

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Appl. Phys. Lett. 86, 152101 (2005); http://dx.doi.org/10.1063/1.1897831 (3 pages)

Walid Hafez and Milton Feng
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Intrinsic effective piezoelectric coefficient e31,f for ferroelectric thin films

Jun Ouyang, R. Ramesh, and A. L. Roytburd

Appl. Phys. Lett. 86, 152901 (2005); http://dx.doi.org/10.1063/1.1899252 (3 pages) | Cited 7 times

Online Publication Date: 4 April 2005

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As a function of film orientation, the intrinsic effective piezoelectric coefficient e31,f is generally formulated for a substrate-constrained ferroelectric film. Numerical results are obtained for Pb(ZrxTi1−x)O3 (PZT) thin films with tetragonal and rhombohedral compositions. It is illustrated that the optimal orientation for e31,f are close to [001] orientation in both tetragonal and rhombohedral PZT films and the maximum calculated e31,f is about −30 C/m2 on the rhombohedral side of the morphotropic phase boundary.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.65.Bn Piezoelectric and electrostrictive constants
77.80.Dj Domain structure; hysteresis
68.55.-a Thin film structure and morphology
77.65.Ly Strain-induced piezoelectric fields

Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon

S. Sayan, N. V. Nguyen, J. Ehrstein, T. Emge, E. Garfunkel, M. Croft, Xinyuan Zhao, David Vanderbilt, I. Levin, E. P. Gusev, Hyoungsub Kim, and P. J. McIntyre

Appl. Phys. Lett. 86, 152902 (2005); http://dx.doi.org/10.1063/1.1864235 (3 pages) | Cited 32 times

Online Publication Date: 4 April 2005

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As high-permittivity dielectrics approach use in metal-oxide-semiconductor field-effect transistor production, an atomic level understanding of their dielectric properties and the capacitance of structures made from them is being rigorously pursued. We and others have shown that crystal structure of ZrO2 films have considerable effects on permittivity as well as band gap. The as-deposited films reported here appear amorphous below a critical thickness ( ∼ 5.4 nm) and transform to a predominantly tetragonal phase upon annealing. At much higher thickness the stable monoclinic phase will be favored. These phase changes may have a significant effect on channel mobility.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
77.22.Ch Permittivity (dielectric function)
73.50.Dn Low-field transport and mobility; piezoresistance
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.40.Gh Other heat and thermomechanical treatments

High-field conduction in barium titanate

F. D. Morrison, P. Zubko, D. J. Jung, J. F. Scott, P. Baxter, M. M. Saad, R. M. Bowman, and J. M. Gregg

Appl. Phys. Lett. 86, 152903 (2005); http://dx.doi.org/10.1063/1.1886899 (3 pages) | Cited 24 times

Online Publication Date: 4 April 2005

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We present current–voltage studies of very thin ( ∼ 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1538 (1955) ]. This study represents a factor of ×5 in field compared with the early studies of BaTiO3 conduction [ A. Branwood et al., Proc. Phys. Soc. London 79, 1161 (1962) ]. Comparison is also given with ceramic multilayer barium titanate capacitors, and with variable range hopping [ B. I. Shklovskii, Sov. Phys. Semicond. 6, 1964 (1973) ], reported in SrTiO3 films [ D. Fuchs, M. Adam, and R. Schneider, J. Phys. IV France 11, 71 (2001) ].
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
73.50.Fq High-field and nonlinear effects

HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

Martin M. Frank, Glen D. Wilk, Dmitri Starodub, Torgny Gustafsson, Eric Garfunkel, Yves J. Chabal, John Grazul, and David A. Muller

Appl. Phys. Lett. 86, 152904 (2005); http://dx.doi.org/10.1063/1.1899745 (3 pages) | Cited 102 times

Online Publication Date: 4 April 2005

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High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III–V semiconductors have long proven elusive. High-permittivity (high-κ) gate dielectrics may enable their fabrication. We have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition. As-deposited films are continuous and predominantly amorphous. A native oxide remains intact underneath HfO2 during growth, while thinning occurs during Al2O3 deposition. Hydrofluoric acid etching prior to growth minimizes the final interlayer thickness. Thermal treatments at ∼ 600 °C decompose arsenic oxides and remove interfacial oxygen. These observations explain the improved electrical quality and increased gate stack capacitance after thermal treatments.
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85.30.Tv Field effect devices
77.22.Ch Permittivity (dielectric function)
81.65.Cf Surface cleaning, etching, patterning
81.40.Gh Other heat and thermomechanical treatments
77.55.-g Dielectric thin films
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification

Nd3+-doped lead lanthanum zirconate titanate transparent ferroelectric ceramic as a laser material: Energy transfer and stimulated emission

A. S. S. de Camargo, É. R. Botero, D. Garcia, J. A. Eiras, and L. A. O. Nunes

Appl. Phys. Lett. 86, 152905 (2005); http://dx.doi.org/10.1063/1.1899752 (3 pages) | Cited 9 times

Online Publication Date: 4 April 2005

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An investigation of the spectroscopic characteristics of high optical quality Nd3+-doped lead lanthanum zirconate titanate transparent ferroelectric ceramics was done to evaluate its potentiality as a near-infrared laser active host. Nonradiative losses that could compromise laser action were quantified in terms of the Judd-Ofelt theory, the Dexter model for ion–ion energy transfer and by measuring excited state absorptions. It was verified that under low power 0.8 μm diode pumping, ion–ion energy transfers are negligible and the system presents η = 0.87. Stimulated emission was observed at 1.06 μm (σSE = 3.5×10−20 cm2) with no influence of ESA transitions.
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42.70.Hj Laser materials
42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.30.Hv Other nonmetallic inorganics
42.55.Xi Diode-pumped lasers

Well-ordered large-area arrays of epitaxial ferroelectric (Bi,La)4Ti3O12 nanostructures fabricated by gold nanotube-membrane lithography

Sung Kyun Lee, Woo Lee, Marin Alexe, Kornelius Nielsch, Dietrich Hesse, and Ulrich Gösele

Appl. Phys. Lett. 86, 152906 (2005); http://dx.doi.org/10.1063/1.1899239 (3 pages) | Cited 22 times

Online Publication Date: 5 April 2005

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Two-dimensionally well-ordered, large-area arrays of epitaxial, ferroelectric, La-substituted Bi4Ti3O12 (BLT) nanostructures are prepared using gold nanotube membranes as a liftoff mask. Epitaxial nanostructures with a height of about 65 nm and a lateral size of about 150 nm, with either (001) (“c-axis”) orientation, or mixed (118)/(100) (“non-c-axis”) orientation, are obtained on (001)- and (011)-oriented SrTiO3 substrates, respectively. The ferroelectric properties are probed by piezoresponse scanning force microscopy. Non-c-axis-oriented BLT nanostructures show an effective piezoresponse coefficient (2dzz) of about 38.0 pm/V, whereas c-axis-oriented structures show one of only about 4.9 pm/V.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
81.07.Bc Nanocrystalline materials
81.16.Nd Micro- and nanolithography
68.55.-a Thin film structure and morphology
77.65.Bn Piezoelectric and electrostrictive constants
77.22.Ej Polarization and depolarization
61.46.-w Structure of nanoscale materials
68.37.Ps Atomic force microscopy (AFM)

Dielectric relaxation and electrical properties of 0.94Pb(Fe1/2Nb1/2)O3–0.06PbTiO3 single crystals

Jie Wang, X. G. Tang, H. L. W. Chan, C. L. Choy, and Haosu Luo

Appl. Phys. Lett. 86, 152907 (2005); http://dx.doi.org/10.1063/1.1901818 (3 pages) | Cited 13 times

Online Publication Date: 7 April 2005

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Dielectric response and electrical conduction properties of 0.94Pb(Fe1/2Nb1/2)O3–0.06PbTiO3 single crystals grown by the Bridgman method were studied. It was found that the single crystals did not show any sign of the presence of Curie temperature between room temperature and 300 °C. However, they exhibited very high dielectric constant at a frequency lower than 100 kHz, in the order of 105. Relaxation occurred at higher frequencies with a large decrease in dielectric constant, to about 1500. The thermal activation energy for relaxation was found to be ∼ 0.17 eV, which is quite close to that for ac conductivity. It followed that the relaxation was attributed to the carriers hopping conduction, which is related to the possible jump motion of additional 3d electron between the equivalent positions of Fe ions.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
72.20.Ee Mobility edges; hopping transport

Charge-trapping device structure of SiO2/SiN/high-k dielectric Al2O3 for high-density flash memory

Chang-Hyun Lee, Sung-Hoi Hur, You-Cheol Shin, Jeong-Hyuk Choi, Dong-Gun Park, and Kinam Kim

Appl. Phys. Lett. 86, 152908 (2005); http://dx.doi.org/10.1063/1.1897431 (3 pages) | Cited 68 times

Online Publication Date: 8 April 2005

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We present a device structure of SiO2/SiN/Al2O3 (SANOS). The use of a high-k dielectric material, specially Al2O3, in the blocking oxide concentrates the electric fields across the tunnel oxide and SiN, and releases it across the blocking oxide under program and erase mode. This effect leads to lower program and erase voltage as well as faster erase speed than the conventional SiO2/SiN/SiO2 (SONOS) device. Moreover, it is shown that the fast erase operation is performed even at a thicker tunnel oxide over 30 Å where the hole direct tunneling current through the tunnel oxide is reduced significantly and thus the SANOS device has the excellent bake retention.
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84.30.Sk Pulse and digital circuits
85.40.Bh Computer-aided design of microcircuits; layout and modeling
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