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11 Apr 2005

Volume 86, Issue 15, Articles (15xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 152101 (2005); http://dx.doi.org/10.1063/1.1897831 (3 pages)

Walid Hafez and Milton Feng
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Simultaneous current-, force-, and work-function measurement with atomic resolution

M. Herz, Ch. Schiller, F. J. Giessibl, and J. Mannhart

Appl. Phys. Lett. 86, 153101 (2005); http://dx.doi.org/10.1063/1.1900316 (3 pages) | Cited 8 times

Online Publication Date: 4 April 2005

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The local work function of a surface determines the spatial decay of the charge density at the Fermi level normal to the surface. Here, we present a method that enables simultaneous measurements of local work-function and tip-sample forces. A combined dynamic scanning tunneling microscope and atomic force microscope is used to measure the tunneling current between an oscillating tip and the sample in real time as a function of the cantilever’s deflection. Atomically resolved work-function measurements on a silicon (111)−(7×7) surface are presented and related to concurrently recorded tunneling current and force measurements.
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68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
68.47.Fg Semiconductor surfaces
68.37.Ps Atomic force microscopy (AFM)

Electrical conductivity of single CdS nanowire synthesized by aqueous chemical growth

Yunze Long, Zhaojia Chen, Wenlong Wang, Fenglian Bai, Aizi Jin, and Changzhi Gu

Appl. Phys. Lett. 86, 153102 (2005); http://dx.doi.org/10.1063/1.1900950 (3 pages) | Cited 19 times

Online Publication Date: 4 April 2005

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In this Letter, we report on the temperature-dependent conductivity and current-voltage curve of a single CdS nanowire, which was synthesized by a simple aqueous chemical growth method. A pair of platinum microleads was fabricated on the single CdS nanowire by focused ion-beam deposition. The room-temperature conductivity and the band gap of the single CdS wire are 0.82 Ω−1 cm−1 and 0.055 eV, respectively. When the applied electric field is larger than 1090 V cm−1, the CdS nanowire shows a nonlinear I‐V curve at room temperature.
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81.07.Bc Nanocrystalline materials
81.05.Dz II-VI semiconductors
73.63.Bd Nanocrystalline materials
81.16.Be Chemical synthesis methods
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Dn Low-field transport and mobility; piezoresistance
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Low-temperature synthesis of ZnSe nanowires and nanosaws by catalyst-assisted molecular-beam epitaxy

A. Colli, S. Hofmann, A. C. Ferrari, C. Ducati, F. Martelli, S. Rubini, S. Cabrini, A. Franciosi, and J. Robertson

Appl. Phys. Lett. 86, 153103 (2005); http://dx.doi.org/10.1063/1.1897053 (3 pages) | Cited 42 times

Online Publication Date: 4 April 2005

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Single-crystal ZnSe nanowires are grown on a prepatterned gold catalyst by molecular-beam epitaxy. Optimum selectivity and maximum nanowire densities are obtained for growth temperatures in the range 400–450 °C, but gold-assisted growth is demonstrated for temperatures as low as 300 °C. This suggests a diffusion process on/through the catalyst particle in the solid state, in contrast to the commonly assumed liquid phase growth models. Straight wires, as thin as 10 nm, nucleate together with thicker and saw-like structures. A gold particle is always found at the tip in both cases.
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81.07.Bc Nanocrystalline materials
81.05.Dz II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.16.Hc Catalytic methods
61.46.-w Structure of nanoscale materials
68.35.Fx Diffusion; interface formation

Field emission from AlN nanorod array

Y. B. Tang, H. T. Cong, Z. G. Zhao, and H. M. Cheng

Appl. Phys. Lett. 86, 153104 (2005); http://dx.doi.org/10.1063/1.1899763 (3 pages) | Cited 40 times

Online Publication Date: 4 April 2005

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Single-crystalline mushroom-like AlN nanorod array has been synthesized. The AlN nanorods, with diameters of 50–200 nm and lengths of several micrometers, are distributed uniformly with density of 107–108 rods/cm2. The field emission measurements show that the turn-on field is 8.8 V/μm at a field emission current density (J) of 10 μA/cm2, and the J (10.31 mA/cm2) fluctuation is as small as 2% within an hour. The relationship between the nanostructure and field emission properties is discussed. The low turn-on field and high current stability demonstrate that the mushroom-like AlN nanorod array is a promising field emission material.
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81.07.Bc Nanocrystalline materials
81.05.Ea III-V semiconductors
79.70.+q Field emission, ionization, evaporation, and desorption
81.16.-c Methods of micro- and nanofabrication and processing
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.50.Dn Low-field transport and mobility; piezoresistance
73.63.Bd Nanocrystalline materials
61.46.-w Structure of nanoscale materials

Magnetic directed assembly of molecular junctions

David P. Long, Charles H. Patterson, Martin H. Moore, Dwight S. Seferos, Guillermo C. Bazan, and James G. Kushmerick

Appl. Phys. Lett. 86, 153105 (2005); http://dx.doi.org/10.1063/1.1899772 (3 pages) | Cited 23 times

Online Publication Date: 4 April 2005

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We present a technique for fabricating molecular junctions for molecular electronic devices. Silica microspheres are rendered magnetically susceptible and electrically conductive by the sequential deposition of nickel and gold films. The metallized microspheres undergo directed assembly into lithographically defined magnetic arrays functionalized with self-assembled monolayers of prototypical molecular wire candidates. We characterize the resulting junctions by scanning electron microscopy and measure their current-voltage characteristics. Magnetic directed assembly provides a wafer-level route for the fabrication of molecular junctions and opens up the potential for hybrid complementary metal-oxide semiconductor∕molecular electronic applications.
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81.07.Nb Molecular nanostructures
81.16.Nd Micro- and nanolithography
81.16.Dn Self-assembly
85.40.Ls Metallization, contacts, interconnects; device isolation
85.65.+h Molecular electronic devices
85.40.Hp Lithography, masks and pattern transfer

Counting Individual Trapped Electrons on Liquid Helium

G. Papageorgiou, P. Glasson, K. Harrabi, V. Antonov, E. Collin, P. Fozooni, P. G. Frayne, M. J. Lea, D. G. Rees, and Y. Mukharsky

Appl. Phys. Lett. 86, 153106 (2005); http://dx.doi.org/10.1063/1.1900301 (3 pages) | Cited 18 times

Online Publication Date: 5 April 2005

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We show that small numbers of electrons, including a single isolated electron, can be held in an electrostatic trap above the surface of superfluid helium. A potential well is created using microfabricated electrodes in a 5 μm diameter pool of helium. Electrons are injected into the trap from an electron reservoir on a helium microchannel. They are individually detected using a superconducting single-electron transistor as an electrometer. A Coulomb staircase is observed as electrons leave the trap one–by–one until the trap is empty. A design for a scalable quantum information processor using an array of electron traps is presented.
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73.20.−r
73.50.Fq High-field and nonlinear effects

Nanofibers from functionalized para-phenylene molecules

M. Schiek, A. Lützen, R. Koch, K. Al-Shamery, F. Balzer, R. Frese, and H.-G. Rubahn

Appl. Phys. Lett. 86, 153107 (2005); http://dx.doi.org/10.1063/1.1900302 (3 pages) | Cited 24 times

Online Publication Date: 5 April 2005

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Tens to hundreds of micrometers long organic nanofibers have been generated from methoxy functionalized quaterphenylene molecules. The mutual alignment of the fibers is similar to that of previously reported nanofibers from para-hexaphenylene, and they emit intense, blue light centered at 400 nm with well resolved higher order vibronic peaks. The morphology is slightly different from that of para-hexaphenylene nanofibers, reflecting the different molecular structure. This study demonstrates that it is possible to generate organic nanofibers from artificially functionalized molecules and thus opens up the route to dedicated applications in new microdevices.
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Fabrication of nanoscale C60 field-effect transistors with carbon nanotubes

Kazunaga Horiuchi, Tomohiro Kato, Shinobu Hashii, Akira Hashimoto, Takahiko Sasaki, Nobuyuki Aoki, and Yuichi Ochiai

Appl. Phys. Lett. 86, 153108 (2005); http://dx.doi.org/10.1063/1.1899251 (3 pages) | Cited 5 times

Online Publication Date: 5 April 2005

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A nanoscale C60 field-effect transistor has been fabricated with carbon nanotubes (C60CNT‐FET). A wire of multiwalled carbon nanotube has been anchored by metal pads on a Si wafer, and cut by bombardment with focused Ga2+ ion beam. The cut ends of the wire have been integrated as source-drain electrodes into the C60CNT‐FET, with a vacuum evaporated C60 thin film. The C60CNT‐FET has exhibited an excellent performance of a low-voltage drive operation, without any short-channel effect even at as small as 100 nm of channel length.
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81.07.De Nanotubes
81.05.U- Carbon/carbon-based materials

High-speed 1.3 μm tunnel injection quantum-dot lasers

Z. Mi, P. Bhattacharya, and S. Fathpour

Appl. Phys. Lett. 86, 153109 (2005); http://dx.doi.org/10.1063/1.1899230 (3 pages) | Cited 64 times

Online Publication Date: 5 April 2005

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1.3 μm tunnel injection quantum-dot lasers are demonstrated. The laser heterostructures are grown by molecular-beam epitaxy. The InAs self-organized quantum dots are p doped to optimize the gain. The lasers are characterized by Jth = 180 A/cm2, T0 = ∞, dg/dn ≈ 1×10−14 cm2, f−3dB = 11 GHz, chirp of 0.1 Å, and zero α parameter.
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42.55.Px Semiconductor lasers; laser diodes
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

A monopole-dipole model to compute the polarization of metallic carbon nanotubes

A. Mayer

Appl. Phys. Lett. 86, 153110 (2005); http://dx.doi.org/10.1063/1.1900952 (3 pages) | Cited 18 times

Online Publication Date: 5 April 2005

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We present a monopole-dipole model to compute the polarization of metallic carbon nanotubes. The parameters of this model are adjusted on experimental data. In particular, we aimed at reproducing the mean polarizability of C60 and C70, the transverse polarizability of some carbon nanotubes, as well as the internal over external value ratio of transverse electric fields. As an application, we compute the axial polarizability of finite (5,5) carbon nanotubes. The comparison of these results with those obtained using other techniques shows that the consideration of net charges gives a better account of the metallicity of this kind of nanotubes.
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61.46.-w Structure of nanoscale materials

Generation of wavelength-dependent, periodic line pattern in metal nanoparticle-containing polymer films by femtosecond laser irradiation

A. Kiesow, S. Strohkark, K. Löschner, A. Heilmann, A. Podlipensky, A. Abdolvand, and G. Seifert

Appl. Phys. Lett. 86, 153111 (2005); http://dx.doi.org/10.1063/1.1897052 (3 pages) | Cited 12 times

Online Publication Date: 5 April 2005

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Thin polymer films containing metal nanoparticles were irradiated with ultrashort, linearly polarized laser pulses. As result of irradiation, nanostructural changes occur in a type of periodically arranged, line-like areas with modified particle size and shape distribution. The periodic formation in this nanocomposite material is observed only for a small filling factor range, which can be attributed to the percolation region or nearby. Transmission (also in cross section) and scanning electron microscopy were applied to investigate the obtained structure modifications. A linear dependency between the period Λ of the line structures and the laser wavelength λ (800, 528, 400, and 266 nm) used with Λ/λ ≈ 0.70 is assumed. The structural changes and the physical mechanism of the periodic formation are discussed.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Rx Nanocrystalline materials
78.47.-p Spectroscopy of solid state dynamics
61.46.-w Structure of nanoscale materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.82.Bg Metals and alloys
61.82.Pv Polymers, organic compounds
61.41.+e Polymers, elastomers, and plastics
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)
68.55.-a Thin film structure and morphology

Scanning-tunneling-microscopy observation of heterojunctions with a type-II band alignment in ZnSe/BeTe multiple quantum wells

I. Yamakawa, Y. Akanuma, R. Akimoto, and A. Nakamura

Appl. Phys. Lett. 86, 153112 (2005); http://dx.doi.org/10.1063/1.1897055 (3 pages) | Cited 3 times

Online Publication Date: 5 April 2005

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Heterojunctions of ZnSe/BeTe multiple quantum wells (MQW) with a type-II band alignment have been investigated by cross-sectional scanning tunneling microscopy (STM). The brightness of the ZnSe and BeTe layers in the cross-sectional STM image is inverted between filled- and empty-state images, taken by switching the bias polarity of the sample bias voltage in constant current mode. Such inversion of the brightness indicates changes in the band offsets of the conduction and valence bands between the ZnSe and BeTe layers of the type-II MQW. The roughness of interfaces in the filled state images has also been investigated on an atomic scale. It is found that the roughness amplitude Δ, and the correlation length Λ, which characterize the observed interfacial roughness, are comparable to the values observed for III-V heterostructures.
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73.21.Fg Quantum wells
73.20.At Surface states, band structure, electron density of states
68.65.Fg Quantum wells
68.35.Ct Interface structure and roughness
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Liquefaction of catalyst during carbon single-walled nanotube growth

A. R. Harutyunyan, T. Tokune, and E. Mora

Appl. Phys. Lett. 86, 153113 (2005); http://dx.doi.org/10.1063/1.1896089 (3 pages) | Cited 19 times

Online Publication Date: 6 April 2005

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Two groups of cobalt nanoparticles with spherical and disk shape were used to grow carbon single-walled nanotubes by chemical vapor deposition. To elucidate the synthesis conditions and for comparison purpose, a third group of cobalt catalyst prepared by common wet chemistry was used. After the synthesis, electron-microscopic studies revealed that the disk-shape particles with size less than 20 nm were transformed into spheres. Meanwhile, calorimetric measurements showed that the given synthesis temperature was lower than the melting point of the catalyst nanoparticles. Our result supports a growth concept based on the formation of nanotubes on carbon-induced liquefied metal nanoparticles.
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81.07.De Nanotubes
81.16.Hc Catalytic methods
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
64.70.D- Solid-liquid transitions
61.46.-w Structure of nanoscale materials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.05.U- Carbon/carbon-based materials

Site-controlled InAs quantum dots regrown on nonlithographically patterned GaAs

K. Meneou, K. Y. Cheng, Z. H. Zhang, C. L. Tsai, C. F. Xu, and K. C. Hsieh

Appl. Phys. Lett. 86, 153114 (2005); http://dx.doi.org/10.1063/1.1900942 (3 pages) | Cited 8 times

Online Publication Date: 6 April 2005

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In this letter, a nonlithographic method for fabrication of high-quality site-controlled InAs quantum dots on GaAs is explored. The self-organized pores in nanochannel alumina (NCA) are used to define the nucleation sites of the site-controlled quantum dots. The pattern from the NCA is transferred to the GaAs substrate by electrochemical etching. The first layer of regrown InAs dots preferentially locate at the bottom of the etch pits on the GaAs substrate. Furthermore, cross-sectional transmission electron microscopy shows that when multiple layers of InAs dots are regrown, the dots will exhibit vertical alignment. To show the excellent optical quality of the regrown quantum dots, photoluminescence spectra are studied; room-temperature photo luminescence from the regrown dots is achieved.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
68.65.Hb Quantum dots (patterned in quantum wells)
78.55.Cr III-V semiconductors
81.65.Cf Surface cleaning, etching, patterning
82.45.-h Electrochemistry and electrophoresis
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Lp Transmission electron microscopy (TEM)

Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy

A. Yoshikawa, N. Hashimoto, N. Kikukawa, S. B. Che, and Y. Ishitani

Appl. Phys. Lett. 86, 153115 (2005); http://dx.doi.org/10.1063/1.1900948 (3 pages) | Cited 19 times

Online Publication Date: 6 April 2005

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We investigated the growth behaviors of InN quantum dots (QDs) on N-polarity GaN by molecular-beam epitaxy. The N-polarity growth has been intentionally used to raise the temperature to facilitate formation of high-quality dots. It was found that the InN QDs could be grown up to 550 °C the Stranski–Kastanov growth mode with the wetting layer thickness of about 1 monolayer, which was confirmed by the simultaneous in situ observations of reflection high-energy electron diffraction and spectroscopic ellipsometry. The density and the diameter of typical InN QDs grown at 450–550 °C were the order of 1011 cm−2 and 15–20 nm, respectively.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.Hb Quantum dots (patterned in quantum wells)
68.35.B- Structure of clean surfaces (and surface reconstruction)

Manipulation of carbon nanotubes using AC dielectrophoresis

Jingqi Li, Qing Zhang, Ning Peng, and Qi Zhu

Appl. Phys. Lett. 86, 153116 (2005); http://dx.doi.org/10.1063/1.1901825 (3 pages) | Cited 50 times

Online Publication Date: 6 April 2005

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Single-wall carbon nanotubes (SWNTs) suspended in isopropyl alcohol are placed between two cross-structured electrodes using an ac dielectrophoresis technique. The SWNTs are found to attach to the electrodes along the direction of the ac external electric field. The SWNTs predominately bridge the shortest gap between the two electrodes and the spatial distribution of the tubes becomes wider for a long manipulation time (say, greater than 300 s). The observed phenomenon is analyzed in terms of the dielectrophoresis-induced torque and force on the SWNTs. Our simulation shows that the time for rotating SWNTs to the direction of the electric field is much smaller than that for translating SWNTs. We also found that metallic SWNTs are forced along the gradient direction of spacial distribution of the electric field strength while semiconducting SWNTs are forced in the opposite direction.
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82.45.-h Electrochemistry and electrophoresis
61.46.-w Structure of nanoscale materials
81.16.Ta Atom manipulation
82.70.Kj Emulsions and suspensions

Pressure-dependent photoluminescence study of ZnO nanowires

W. Shan, W. Walukiewicz, J. W. Ager, K. M. Yu, Y. Zhang, S. S. Mao, R. Kling, C. Kirchner, and A. Waag

Appl. Phys. Lett. 86, 153117 (2005); http://dx.doi.org/10.1063/1.1901827 (3 pages) | Cited 31 times

Online Publication Date: 6 April 2005

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The pressure dependence of the photoluminescence (PL) transition associated with the fundamental bandgap of ZnO nanowires has been studied at pressures up to 15 GPa. The near-bandedge luminescence emission is found to shift toward higher energy with applied pressure at a rate of 29.2 meV/GPa with a small second-order term of −0.38 meV/GPa2. An effective hydrostatic deformation potential −3.92±0.15 eV for the direct bandgap of the ZnO nanowires is derived from the results. The broad green emission band in ZnO depends on pressure with a linear slope of 15.9 meV/GPa and a quadratic coefficient of −0.71 meV/GPa2. The results indicate that the initial states involved in the emission process are deep localized states.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
62.50.-p High-pressure effects in solids and liquids
61.46.-w Structure of nanoscale materials
81.05.Dz II-VI semiconductors
81.40.Vw Pressure treatment
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects

Quantitative measurement of sheet resistance by evanescent microwave probe

Zhengyu Wang, Michael A. Kelly, Zhi-Xun Shen, Lin Shao, Wei-Kan Chu, and Hal Edwards

Appl. Phys. Lett. 86, 153118 (2005); http://dx.doi.org/10.1063/1.1891296 (3 pages) | Cited 7 times

Online Publication Date: 7 April 2005

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Quantitative measurement of microwave sheet resistance by a novel type of near-field microwave microscope—Evanescent Microwave Probe (EMP)—has been demonstrated. The data cover a wide range of sheet resistance from the metal limit to the insulator limit. Both finite element analysis (FEA) and a simple coaxial ring model have been shown to fit the data well. The demonstration of sheet resistance measurement with high spatial resolution in the GHz range shows the potential of EMP for semiconductor metrology applications. The data also reveal issues related to the large penetration depth, allowing substrate properties to affect the signal.
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68.37.Uv Near-field scanning microscopy and spectroscopy
68.37.−d
52.70.Gw Radio-frequency and microwave measurements

ZnO nanowires with high aspect ratios grown by metalorganic chemical vapor deposition using gold nanoparticles

Sang-Woo Kim, Shizuo Fujita, and Shigeo Fujita

Appl. Phys. Lett. 86, 153119 (2005); http://dx.doi.org/10.1063/1.1883320 (3 pages) | Cited 39 times

Online Publication Date: 7 April 2005

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ZnO nanowires with diameters ranging from 20 to 60 nm and lengths in the range 5–15 μm were synthesized by metalorganic chemical vapor deposition, assisted by colloidal gold nanoparticles with a diameter of 20 nm dispersed on SiO2/Si substrates. The ZnO nanowires were found to have a high-internal quantum efficiency and negligibly weak deep-level emission, as evidenced by photoluminescence measurements. The clear observation of free-exciton and biexciton emission indicates that the ZnO nanowires prepared by this method are of high quality.
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81.07.Bc Nanocrystalline materials
81.05.Dz II-VI semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
71.35.Cc Intrinsic properties of excitons; optical absorption spectra

Triangular lattice of carbon nanotube arrays for negative index of refraction and subwavelength lensing effect

Y. Wang, X. Wang, J. Rybczynski, D. Z. Wang, K. Kempa, and Z. F. Ren

Appl. Phys. Lett. 86, 153120 (2005); http://dx.doi.org/10.1063/1.1900941 (3 pages) | Cited 6 times

Online Publication Date: 8 April 2005

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Self-assembly of polystyrene microspheres has been utilized in a two-step masking technique to prepare triangular lattices of catalytic nanodots at low cost. Subsequent triangular lattices of aligned carbon nanotubes on a silicon substrate are achieved by plasma-enhanced chemical vapor deposition. Nickel is used both in the nanodots and in the secondary mask. The triangular lattices of carbon nanotube arrays as two-dimensional photonic crystals show higher geometrical symmetry than the hexagonal lattices previously reported, enabling broader applications including negative index of refraction and subwavelength lensing effect.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
81.16.Dn Self-assembly
42.70.Qs Photonic bandgap materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.77.Dq Plasma-based ion implantation and deposition
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
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