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18 Apr 2005

Volume 86, Issue 16, Articles (16xxxx)

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Time and temperature dependencies of imprint characteristics in SrBi2Ta2O9 capacitors

Kinya Ashikaga, Koji Takaya, Takao Kanehara, and Ichiro Koiwa

Appl. Phys. Lett. 86, 162901 (2005); http://dx.doi.org/10.1063/1.1901821 (2 pages) | Cited 4 times

Online Publication Date: 11 April 2005

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The temperature dependence of imprint characteristics in SrBi2Ta2O9 capacitors has been investigated by monitoring changes in switching charges (ΔQ) and hysteresis shifts (ΔV). Activation energies Ea and Ea′ were obtained from ΔQ and ΔV, respectively, Ea = 0.34 and Ea′ = 0.14 eV. The origin of this discrepancy is due to the fact that the relationship between ΔQ and ΔV is not linear, and because the dependence of ΔQ on temperature is overestimated because of the seeming dependence. It is concluded that a detailed investigation of hysteresis shifts is necessary for precise discussions of imprint mechanisms in ferroelectric capacitors.
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84.32.Tt Capacitors
85.50.Gk Non-volatile ferroelectric memories
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Fm Switching phenomena
77.80.Dj Domain structure; hysteresis

Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability

Takaaki Miyasako, Masaru Senoo, and Eisuke Tokumitsu

Appl. Phys. Lett. 86, 162902 (2005); http://dx.doi.org/10.1063/1.1905800 (3 pages) | Cited 31 times

Online Publication Date: 12 April 2005

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We have fabricated and characterized ferroelectric-gate thin-film transistors (TFTs) using indium-tin-oxide (ITO) as a channel and ferroelectric Bi4−xLaxTi3O12 (BLT) as a gate insulator. We have obtained a typical n-channel transistor property with clear current saturation in drain current and drain voltage (ID–VD) characteristics. The obtained on∕off current ratio is more than 104 and the field-effect mobility is estimated 9.1 cm2/Vs. In particular, we demonstrate a large “on”-current of 2.5 mA in ITO∕BLT structure TFT in spite of the low channel mobility. This is because the ferroelectric film can induce large charge density due to the spontaneous polarization.
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85.30.Tv Field effect devices
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.55.-g Dielectric thin films
73.50.Dn Low-field transport and mobility; piezoresistance
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis

Crystalline orientation dependence of nanomechanical properties of Pb(Zr0.52Ti0.48)O3 thin films

Qing-Ming Wang, Yongping Ding, Qingming Chen, Minhua Zhao, and Jinrong Cheng

Appl. Phys. Lett. 86, 162903 (2005); http://dx.doi.org/10.1063/1.1901805 (3 pages) | Cited 18 times

Online Publication Date: 12 April 2005

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It has been recognized that the control of crystalline orientation and thickness of Pb(Zr0.52Ti0.48)O3 (PZT) thin-films is very critical in the fabrication of piezoelectric thin-film devices with desirable dielectric and electromechanical properties. Here, we present our recent studies on the fabrication of PZT films with (001), (111), and random crystalline orientations onto platinized silicon substrates and the crystalline orientation dependence of the nanomechanical properties. A 1.0-μm PZT film with a strong (100) orientation is deposited by a 2–methoxyethanol- (2–MOE)-based sol–gel precursor solution, while random orientation is obtained by acetic acid-based sol–gel precursor. Rapid thermal annealing of 2–MOE sol-gel-based PZT films leads to strong (111) orientation. All PZT films show similar hysteresis behavior and large remnant polarizations; however, the nanomechanical test using AFM and nanoindentation indicates distinct values of Young’s modulus for PZT films with different orientations.
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77.55.-g Dielectric thin films
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.D- Elasticity
62.20.M- Structural failure of materials
61.72.Cc Kinetics of defect formation and annealing

Effects of partial discharges on crack growth in dielectrics

Cun-Fa Gao and Naotake Noda

Appl. Phys. Lett. 86, 162904 (2005); http://dx.doi.org/10.1063/1.1906298 (3 pages) | Cited 1 time

Online Publication Date: 14 April 2005

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Effects of partial discharge of air inside a cracklike flaw on crack growth in a dielectric solid are studied. The energy release rate is first derived for a slender elliptical flaw with an arbitrary permittivity in an infinite dielectric solid under remote electric loading. Based on the streamer-type discharge mechanism, the energy release rate for the discharged crack is presented, and then used as a failure criterion to predict the effects of electric fields on crack growth in a dielectric material. It is shown that pure electric loading can lead to crack propagation when partial discharges happen.
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52.80.-s Electric discharges
52.80.Wq Discharge in liquids and solids
77.22.Ch Permittivity (dielectric function)
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.M- Structural failure of materials
71.15.Nc Total energy and cohesive energy calculations

Fabrication of ferroelectric PbZr0.4Ti0.6O3 multilayers by sol–gel process

G. J. Hu, J. Chen, D. L. An, J. H. Chu, and N. Dai

Appl. Phys. Lett. 86, 162905 (2005); http://dx.doi.org/10.1063/1.1914957 (3 pages) | Cited 17 times

Online Publication Date: 15 April 2005

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Quasiperiodic ferroelectric PbZr0.4Ti0.6O3 multilayers have been fabricated using the sol–gel technique based on one single precursor. The building block of the multilayer is the distinct PbZr0.4Ti0.6O3/porous-PbZr0.4Ti0.6O3 bilayer formed in a single spin-casting/annealing step and the formation of the bilayer is governed by phase segregation process. The quasiperiodic ferroelectric multilayer exhibits good performance as a Bragg reflector. With 11 periods, 90% reflectivity and 40-nm stop-band width have been achieved at room temperature.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.40.Gh Other heat and thermomechanical treatments
42.79.Dj Gratings
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