APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

18 Apr 2005

Volume 86, Issue 16, Articles (16xxxx)

Return to All Sections
back to top
RSS Feeds

Nanotransfer printing of organic and carbon nanotube thin-film transistors on plastic substrates

D. R. Hines, S. Mezhenny, M. Breban, E. D. Williams, V. W. Ballarotto, G. Esen, A. Southard, and M. S. Fuhrer

Appl. Phys. Lett. 86, 163101 (2005); http://dx.doi.org/10.1063/1.1901809 (3 pages) | Cited 42 times

Online Publication Date: 11 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A printing process for high-resolution transfer of all components for organic electronic devices on plastic substrates has been developed and demonstrated for pentacene (Pn), poly (3-hexylthiophene) and carbon nanotube (CNT) thin-film transistors (TFTs). The nanotransfer printing process allows fabrication of an entire device without exposing any component to incompatible processes and with reduced need for special chemical preparation of transfer or device substrates. Devices on plastic substrates include a Pn TFT with a saturation, field-effect mobility of 0.09 cm2(V s)−1 and on/off ratio approximately 104 and a CNT TFT which exhibits ambipolar behavior and no hysteresis.
Show PACS
85.30.Tv Field effect devices
85.35.Kt Nanotube devices
85.40.Hp Lithography, masks and pattern transfer
73.50.Dn Low-field transport and mobility; piezoresistance

Giant random telegraph signals in the carbon nanotubes as a single defect probe

Fei Liu, Mingqiang Bao, Hyung-jun Kim, Kang L. Wang, Chao Li, Xiaolei Liu, and Chongwu Zhou

Appl. Phys. Lett. 86, 163102 (2005); http://dx.doi.org/10.1063/1.1901822 (3 pages) | Cited 14 times

Online Publication Date: 11 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Giant random telegraph signals (RTSs) are observed in p-type semiconducting single-wall carbon nanotube (SWNT) field-effect transistors (FETs). The RTSs are attributed to the trapping and detrapping of the two defects inside SiO2 or in the interface between SWNT and SiO2. The amplitude of the RTSs is up to 60% of total current. The giant switching amplitude of RTSs is believed to be caused by the strong mobility modulation originated from the charging of the defects in the one-dimensional carbon nanotube channels with an ultrasmall channel width on the order of 1–3 nm. The potential application of RTSs in SWNT as a sensitive probe to study single defects is discussed.
Show PACS
85.30.Tv Field effect devices
85.35.Kt Nanotube devices
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Cantilever calibration for nanofriction experiments with atomic force microscope

N. Morel, M. Ramonda, and Ph. Tordjeman

Appl. Phys. Lett. 86, 163103 (2005); http://dx.doi.org/10.1063/1.1905803 (3 pages) | Cited 11 times

Online Publication Date: 12 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The lateral force microscope can provide information on frictional properties on surfaces down to the nanometer scale. Reproducible quantitative measurements require an accurate calibration of the mechanical response of cantilever. In this letter, we propose a fast and nondestructive method to determine the normal and lateral cantilever stiffness, kcantileverN and kcantileverL, used to calculate the normal and friction forces.
Show PACS
07.79.Lh Atomic force microscopes
06.20.F- Units and standards
07.10.-h Mechanical instruments and equipment
81.70.Bt Mechanical testing, impact tests, static and dynamic loads
68.35.Af Atomic scale friction
46.55.+d Tribology and mechanical contacts
46.25.-y Static elasticity

Coherence-matched microfocusing of hard x rays

B. Nöhammer, C. David, M. Burghammer, and C. Riekel

Appl. Phys. Lett. 86, 163104 (2005); http://dx.doi.org/10.1063/1.1905782 (3 pages) | Cited 10 times

Online Publication Date: 12 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An efficient, high-resolution microfocusing device for hard x rays is presented. A combination of two linear zone plates mounted with orthogonal orientation is used to provide two-dimensional focusing. Choosing appropriate lens parameters, the device can be matched to the quasielliptical shape of most synchrotron x-ray sources to obtain a symmetric, circular-shaped focal spot. A rectangular device aperture allows the maximization of the light-collecting area and to simultaneously achieve a highly coherent illumination of the device. Such a setup was tested at the European Synchrotron Radiation Facility and test gratings with minimal line widths of 140 nm could be resolved. The gain in flux density was found to be 105 for 12.7 keV photons.
Show PACS
42.79.Bh Lenses, prisms and mirrors
42.79.Ci Filters, zone plates, and polarizers
41.50.+h X-ray beams and x-ray optics

Ferromagnetism of an all-carbon composite composed of a carbon nanowire inside a single-walled carbon nanotube

Xiaoping Yang and Jinming Dong

Appl. Phys. Lett. 86, 163105 (2005); http://dx.doi.org/10.1063/1.1899769 (3 pages) | Cited 7 times

Online Publication Date: 12 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Using the first-principles spin density functional approach, we have studied magnetism of a type of all-carbon nanomaterials, i.e., the carbon nanowires inserted into the single-walled carbon nanotubes. It is found that if the one-dimensional (1D) carbon nanowire density is not too higher, the ferromagnetic ground state will be more stable than the antiferromagnetic one, which is caused by weak coupling between the 1D carbon nanowire and the single-walled carbon nanotube. Also, both dimerization of the carbon nanowire and carbon vacancy on the tube wall are found to enhance the magnetic moment of the composite.
Show PACS
75.50.Tt Fine-particle systems; nanocrystalline materials
75.50.Dd Nonmetallic ferromagnetic materials
75.75.-c Magnetic properties of nanostructures
75.30.Cr Saturation moments and magnetic susceptibilities
75.30.Et Exchange and superexchange interactions
75.25.-j Spin arrangements in magnetically ordered materials (including neutron and spin-polarized electron studies, synchrotron-source x-ray scattering, etc.)
75.40.Mg Numerical simulation studies
61.46.-w Structure of nanoscale materials
61.72.J- Point defects and defect clusters

Structural control of self-assembled PbTiO3 nanoislands fabricated by metalorganic chemical vapor deposition

Hajime Nonomura, Masaki Nagata, Hironori Fujisawa, Masaru Shimizu, Hirohiko Niu, and Koichiro Honda

Appl. Phys. Lett. 86, 163106 (2005); http://dx.doi.org/10.1063/1.1899748 (3 pages) | Cited 19 times

Online Publication Date: 12 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Self-assembled PbTiO3 nanoislands of three different shapes with orderly in-plane directions were fabricated on Pt/SrTiO3 substrates by metalorganic chemical vapor deposition. The shapes of the nanoislands were triangular-shaped (width 50–110 nm, height 20–30 nm), triangular-prism-shaped (width 50–110 nm, length 100–550 nm, height 10–30 nm) and square-shaped (width 40–130 nm, height 4–10 nm) on Pt/SrTiO3(111), (101), and (001), respectively. The PbTiO3 nanoislands were epitaxially grown on the Pt/SrTiO3 substrates and consisted of {100} and {001} facets irrespective of the orientation of the substrates indicating that structural control of shape and in-plane direction of self-assembled PbTiO3 nanoislands can be achieved through epitaxial relations. The self-assembled PbTiO3 nanoislands with three different shapes were found to be ferroelectric by piezoresponse force microscopy.
Show PACS
77.55.-g Dielectric thin films
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.07.Bc Nanocrystalline materials
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.16.Dn Self-assembly
68.55.A- Nucleation and growth
77.80.Dj Domain structure; hysteresis

Nanoindentation response of a single micrometer-sized GaAs wall

E. Le Bourhis and G. Patriarche

Appl. Phys. Lett. 86, 163107 (2005); http://dx.doi.org/10.1063/1.1904711 (3 pages) | Cited 1 time

Online Publication Date: 12 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Wall-patterned GaAs surfaces have been elaborated by photolithography and dry etching. The mechanical response of individual μm-sized walls was tested at different positions on the wall by nanoindentation. Overall results show that contact stiffness remains constant across the wall while total penetration drastically increases at the proximity of the free sides of the wall. Transmission electron microscopy was used to get further insight into the plastic deformation of the walls and reveals that the central-plastic zone governs the mechanical response instead of the rosette arms. The application of substrate patterning with enhanced plastic compliance is suggested in order to eliminate residual dislocations appearing in mismatched structures grown for optoelectronic devices.
Show PACS
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
81.65.Cf Surface cleaning, etching, patterning
81.40.Jj Elasticity and anelasticity, stress-strain relations
68.35.Gy Mechanical properties; surface strains
81.40.Lm Deformation, plasticity, and creep
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
62.20.M- Structural failure of materials
62.20.D- Elasticity
62.20.F- Deformation and plasticity
68.37.Lp Transmission electron microscopy (TEM)

Nanoindentation study of the superlattice hardening effect at TiC(110)/NbC(110) interfaces

W. Sekkal, A. Zaoui, and S. Schmauder

Appl. Phys. Lett. 86, 163108 (2005); http://dx.doi.org/10.1063/1.1897432 (3 pages) | Cited 3 times

Online Publication Date: 12 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We present an atomistic calculation using the embedded atom method in order to investigate nanoindentation in superlattices based on carbide materials. The purpose is to conduct a nanoindentation simulation study in order to evaluate the hardness of TiC and the one of TiC/NbC. Results clearly show that this calculated quantity increases considerably from the carbide alone to the carbide in sandwich with another one like NbC. This mainly highlights the possibility to increase the hardness of carbide materials and confirms theoretically the previous experimental deductions.
Show PACS
81.07.Bc Nanocrystalline materials
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
68.35.Gy Mechanical properties; surface strains
62.20.Qp Friction, tribology, and hardness

Single-electron manipulation to and from a SiO2 surface by electrostatic force microscopy

E. Bussmann, N. Zheng, and C. C. Williams

Appl. Phys. Lett. 86, 163109 (2005); http://dx.doi.org/10.1063/1.1897429 (3 pages) | Cited 8 times

Online Publication Date: 13 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Occupation of individual electron states near the surface of a SiO2 film is controlled by reversible single-electron tunneling to or from a metallic electrostatic force microscope probe. By switching the polarity of an applied dc bias between the probe and the sample to adjust the Fermi energy of the probe with respect to states near the dielectric surface, individual electrons are repeatably manipulated in and out of the sample. The single-electron charging and discharging is detected by frequency detection electrostatic force microscopy.
Show PACS
77.55.-g Dielectric thin films
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.40.Gk Tunneling
73.20.At Surface states, band structure, electron density of states
68.37.Ps Atomic force microscopy (AFM)

Self-assembled three-dimensional epitaxial ionic fluorite Gd2Zr2O7 nanorods on (001) LaAlO3

J. C. Jiang, E. I. Meletis, R. Asuvathraman, K. V. Govindan Kutty, K. I. Gnanasekar, and C. L. Chen

Appl. Phys. Lett. 86, 163110 (2005); http://dx.doi.org/10.1063/1.1899250 (3 pages) | Cited 4 times

Online Publication Date: 14 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Self-organized, three-dimensional (3D), coherent fluorite Gd2Zr2O7 nanorods were synthesized with pulsed-laser ablation. Transmission electron microscopy studies reveal that the 3D nanorods are epitaxially grown on (001) LaAlO3 with (001)GZO‖(001)LAO, [110]GZO‖[100]LAO and [1math0]GZO‖[010]LAO. The nanorods have in-plane dimensions of about 20–35 nm, and their length can extend for the entire film thickness. The 3D nanorods have a vertical prism shape with side surfaces exhibiting a serrated morphology composed of {111} planes. The formation of such self-organized nanorods is consistent with a preferential growth mechanism and surface energy minimization considerations.
Show PACS
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.07.Bc Nanocrystalline materials
81.16.Mk Laser-assisted deposition
73.61.Ng Insulators
66.30.H- Self-diffusion and ionic conduction in nonmetals
81.15.Fg Pulsed laser ablation deposition
61.46.-w Structure of nanoscale materials
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.35.Md Surface thermodynamics, surface energies
73.63.Bd Nanocrystalline materials
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Lp Transmission electron microscopy (TEM)

Room-temperature quantum effect in silicon nanoparticles obtained by low-energy ion implantation and embedded in a nanometer scale capacitor

M. Shalchian, J. Grisolia, G. Ben Assayag, H. Coffin, S. M. Atarodi, and A. Claverie

Appl. Phys. Lett. 86, 163111 (2005); http://dx.doi.org/10.1063/1.1906329 (3 pages) | Cited 15 times

Online Publication Date: 14 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In this article, we present the room-temperature current-voltage characteristics of a nanometer scale (100×100 nm2) metal-oxide-semiconductor capacitor containing few (less than 100) silicon nanoparticles. The layer of silicon nanoparticles is synthesized within the oxide of this capacitor by ultra low-energy ion implantation and annealing. Current fluctuations in the form of discrete current steps and sharp peaks appeared in the static and dynamic I(V) characteristics of the capacitor. These features have been associated to quantized charging and discharging of the nanoparticles and the resulting Coulomb interaction to the tunneling current.
Show PACS
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.07.Bc Nanocrystalline materials

Carbon nanotube growth for field-emission cathodes from graphite paste using Ar-ion bombardment

Charles E. Hunt, Orest J. Glembocki, Yu Wang, and Sharka M. Prokes

Appl. Phys. Lett. 86, 163112 (2005); http://dx.doi.org/10.1063/1.1899236 (3 pages) | Cited 6 times

Online Publication Date: 15 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Multiwall carbon nanotubes (MW-CNT) have been synthesized from solid-phase graphite. The graphite is deposited as a thick-film paste and irradiated with a 1.2 keV flood Ar-ion beam, transforming the graphite surface to a composite of MW-CNT embedded in the graphite matrix. Micro-Raman measurements have verified that the nanotubes are metallic in nature. The technique was used to make printed field-emission cathodes. Emission from these cathodes demonstrates Fowler–Nordheim tunneling characteristics. The irradiated film emits at an extraction field of 5.0 V/μm, which is less than one-sixth of the minimum extraction field of the nonirradiated graphite film, and exhibit lower noise and greater emission uniformity.
Show PACS
81.07.De Nanotubes
81.05.U- Carbon/carbon-based materials
81.16.-c Methods of micro- and nanofabrication and processing
79.70.+q Field emission, ionization, evaporation, and desorption
73.63.Fg Nanotubes
61.80.Jh Ion radiation effects
73.40.Gk Tunneling
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.82.Rx Nanocrystalline materials
78.30.Hv Other nonmetallic inorganics
78.67.Ch Nanotubes

Characterization of nanotextured AlN thin films by x-ray absorption near-edge structures

T. Suga, S. Kameyama, S. Yoshioka, T. Yamamoto, I. Tanaka, and T. Mizoguchi

Appl. Phys. Lett. 86, 163113 (2005); http://dx.doi.org/10.1063/1.1904714 (3 pages) | Cited 11 times

Online Publication Date: 15 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
AlN thin films have been grown on c-cut sapphire substrates by pulsed-laser deposition. The film epitaxially grown at 1073 K under vacuum of 5×10−4 Pa was used to examine the crystallographic orientation dependence of Al K-edge x-ray absorption near-edge structures (XANES), which satisfactorily agrees with theoretical spectra obtained by first-principles calculations. The film grown at 1073 K with N2 backfill of 7×10−2 Pa shows nanotextured structure with its c plane parallel to the substrate. Although the nanotexture is not evident by x-ray diffraction, XANES can unambiguously indicate the texturing. Cross-sectional high-resolution electron microscopy provides the evidence of the nanostructure.
Show PACS
81.05.Ea III-V semiconductors
81.07.Bc Nanocrystalline materials
68.55.-a Thin film structure and morphology
78.70.Dm X-ray absorption spectra
61.46.-w Structure of nanoscale materials
68.37.Lp Transmission electron microscopy (TEM)
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close