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25 Apr 2005

Volume 86, Issue 17, Articles (17xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 173508 (2005); http://dx.doi.org/10.1063/1.1914966 (3 pages)

A. M. Clark, N. A. Miller, A. Williams, S. T. Ruggiero, G. C. Hilton, L. R. Vale, J. A. Beall, K. D. Irwin, and J. N. Ullom
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Ultralow-power all-optical switching

Marin Soljačić, Elefterios Lidorikis, J. D. Joannopoulos, and Lene Vestergaard Hau

Appl. Phys. Lett. 86, 171101 (2005); http://dx.doi.org/10.1063/1.1900956 (3 pages) | Cited 32 times

Online Publication Date: 18 April 2005

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Using analytical modeling and detailed numerical simulations, we investigate properties of hybrid systems of photonic crystal microcavities which incorporate a highly nonlinear ultraSlow light medium. We demonstrate that such systems, while being miniature in size (order wavelength), and integrable, could enable ultrafast nonlinear all-optical switching at ultralow (even single photon) energy levels.
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42.70.Qs Photonic bandgap materials
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Optical observation of donor-bound excitons in hydrogen-implanted ZnO

J.-K. Lee, M. Nastasi, D. W. Hamby, and D. A. Lucca

Appl. Phys. Lett. 86, 171102 (2005); http://dx.doi.org/10.1063/1.1906330 (3 pages) | Cited 10 times

Online Publication Date: 18 April 2005

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The optical and structural properties of H or He implanted ZnO were investigated using low temperature photoluminescence (PL) and infrared spectroscopy (IR). H implantation is shown to influence the relative luminescence intensities of the donor bound excitons, enhancing the 3.361 eV peak, and changing the overall intensity of the PL spectrum. PL from He implanted ZnO is used to demonstrate that implantation damage is partially responsible for the variations observed in the PL of H implanted ZnO. IR spectra show that the increase in the relative intensity of the 3.361 eV peak coincides with an appearance of the H vibrational mode in the ZnO lattice. Our results indicate that the implanted H forms O–H bonds at Zn vacancies, and that it is these defect complexes which give rise to the shallow donors participating in the observed bound-exciton luminescence at 3.361 eV.
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Unidirectional beam emission from strained InGaAsP multiple-quantum-well quasistadium laser diodes

Takehiro Fukushima, Tomoko Tanaka, and Takahisa Harayama

Appl. Phys. Lett. 86, 171103 (2005); http://dx.doi.org/10.1063/1.1920430 (3 pages) | Cited 2 times

Online Publication Date: 19 April 2005

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We present unidirectional emission from strained InGaAsP multiple-quantum-well quasistadium laser diodes, whose resonators consist of two confocal end mirrors and two long, straight, sidewall mirrors. Far-field patterns exhibit highly directional emission at a 20° angle from the cavity axis. This angle corresponds to a unidirectional ring trajectory inside the resonator. We also report that the unidirectional emission can be explained by the phase locking of two resonator modes with different symmetry classes based on the extended Fox-Li mode calculation method.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.79.Bh Lenses, prisms and mirrors

An approach to the design of highly selective resonant-cavity-enhanced photodetectors

A. Ramam, G. K. Chowdhury, and S. J. Chua

Appl. Phys. Lett. 86, 171104 (2005); http://dx.doi.org/10.1063/1.1914964 (3 pages) | Cited 2 times

Online Publication Date: 19 April 2005

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The information capacity of a communication system employing a wavelength-division multiplexing scheme can be increased by reducing the free spectral range between different signals, reducing the full width at half maximum (FWHM), and detecting these closely spaced channels. After critically analyzing the design parameters of existing resonant-cavity-enhanced (RCE) p–i–n photodetectors, we have determined that more closely spaced channels can be detected either by increasing the length of a RCE p–i–n detector or by reducing the stop-band width of the bottom mirror. A masking procedure is described to determine the maximum cavity length attainable for any bottom distributed Bragg reflector (DBR) materials so that photodetector filters and detects only one wavelength, being insensitive to all other wavelengths. The optimized cavity length of single wavelength selective RCE detector operating at 1.3 μm using 42 ½ pairs of InAlGaAs/InP as a bottom DBR is 7.5 μm and its theoretical FWHM is 2.5 nm.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
42.15.Eq Optical system design
42.82.Bq Design and performance testing of integrated-optical systems
42.79.Bh Lenses, prisms and mirrors
42.79.Ci Filters, zone plates, and polarizers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Self-stabilized and dispersion-compensated passively mode-locked Yb:Yttrium aluminum garnet laser

A. Agnesi, A. Guandalini, and G. Reali

Appl. Phys. Lett. 86, 171105 (2005); http://dx.doi.org/10.1063/1.1914965 (3 pages) | Cited 1 time

Online Publication Date: 19 April 2005

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Self-stabilized passive mode-locking of a diode-pumped Yb:yttrium aluminum garnet laser with a semiconductor saturable absorber was achieved using an off-phase-matching second-harmonic crystal. According to the numerical model, such a condition is accomplished by self-defocusing in the nonlinear crystal in the presence of positive intracavity dispersion. Robust mode locking with Fourier-limited 1.0-ps pulses was obtained, whereas mode locking, unassisted by the nonlinear crystal, yielded 2.2-ps pulses, with the laser operating near the edge of the stability region in order to minimize the saturation energy of the semiconductor device.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.55.Xi Diode-pumped lasers
42.70.Hj Laser materials

Line-defect–waveguide laser integrated with a point defect in a two-dimensional photonic crystal slab

Atsushi Sugitatsu, Takashi Asano, and Susumu Noda

Appl. Phys. Lett. 86, 171106 (2005); http://dx.doi.org/10.1063/1.1920429 (3 pages) | Cited 10 times

Online Publication Date: 20 April 2005

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We realize an active two-dimensional (2D) photonic crystal laser with a combination of line defects and point defects. Based on a line-defect–waveguide laser in a 2D photonic crystal slab, we observe laser emission from the point defect at the waveguide mode-edge frequency when there is a frequency mismatch with the point-defect mode. This phenomenon is due to the wide-field distribution at the waveguide mode edge and its distortion by the adjacent point defect. Numerical calculations estimate the emission efficiency and are in good agreement with experimental results.
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42.55.Tv Photonic crystal lasers and coherent effects
42.70.Qs Photonic bandgap materials
42.70.Hj Laser materials
61.72.J- Point defects and defect clusters

Decomposition of KH2PO4 crystals during laser-induced breakdown

R. A. Negres, S. O. Kucheyev, P. DeMange, C. Bostedt, T. van Buuren, A. J. Nelson, and S. G. Demos

Appl. Phys. Lett. 86, 171107 (2005); http://dx.doi.org/10.1063/1.1921349 (3 pages) | Cited 10 times

Online Publication Date: 20 April 2005

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The structure of KH2PO4 single crystals (so-called KDP) irradiated with ∼ 3 ns, 355 nm laser pulses with fluences above the laser-induced breakdown threshold is studied by a combination of Raman scattering, photoluminescence, and soft x-ray absorption spectroscopies. We compare spectra from the as-grown material, surface and bulk laser-induced damage sites, as well as from KPO3 references. Results show that irradiation with fluences above the laser-induced breakdown threshold leads to decomposition of KDP at surface damage sites but not at bulk damage sites. New spectroscopic features are attributed to dehydration products. For the laser irradiation conditions used in this study, the decomposed near-surface layer absorbs photons at ∼ 3.4 eV (364 nm). These results may explain the recently reported fact that surface laser damage sites in KDP crystals tend to grow with subsequent exposure to high-power laser pulses, while bulk damage sites do not.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.82.Ms Insulators
61.66.Fn Inorganic compounds
79.20.Ds Laser-beam impact phenomena
78.30.Hv Other nonmetallic inorganics
78.70.Dm X-ray absorption spectra
78.55.Hx Other solid inorganic materials
42.70.Qs Photonic bandgap materials

Enhanced electrophosphorescence via highly efficient energy transfer from conjugated polymer

Tae-Ho Kim, Dong-Hee Yoo, Jong Hyeok Park, O Ok Park, Jae-Woong Yu, and Jai Kyeong Kim

Appl. Phys. Lett. 86, 171108 (2005); http://dx.doi.org/10.1063/1.1921356 (3 pages) | Cited 19 times

Online Publication Date: 20 April 2005

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We have demonstrated that efficient green electrophosphorescence is obtained via cascade energy transfer from poly(N-vinylcarbazole) (PVK) and host fluorescent polymer to the phosphorescent iridium complex. Efficient energy transfers from PVK to fluorescent polymer and then from this host polymer to iridium complex, fac-tris[2-(2-pyridinyl-kN)[5-(2,5-dimethylphenyl)phenyl]-kC]-iridium(III) [Ir(PDPP)3], were observed in the PVK/fluorescent polymer/Ir(PDPP)3 blend system, even though the chemical compatibility between this fluorescent polymer and Ir(PDPP)3 is very poor. The phase separation between the host polymer and Ir(PDPP)3 was restrained and highly efficient energy transfer also occurred by blending with PVK which has the good chemical compatibility with both host and guest materials. The resulting device (indium tin oxide/PEDOT/blend layer/BCP/Li:Al alloy) reaches a maximum external quantum efficiency of 8.9% and a luminous efficiency of 32 cd/A.
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78.60.-b Other luminescence and radiative recombination
64.75.-g Phase equilibria

Collective behavior and disorder-induced resonator of random lasers

Sheng Li, Zi-Jun Wang, Liang-Shan Chen, Xin Sun, and Thomas F. George

Appl. Phys. Lett. 86, 171109 (2005); http://dx.doi.org/10.1063/1.1920409 (3 pages) | Cited 2 times

Online Publication Date: 21 April 2005

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The localization caused by multiple scattering of lightwaves provides a mode for random laser action. It is shown that once the gain surpasses a certain threshold, photons are driven to localized modes, which greatly suppresses the energy loss and leads to laser emission. Concurrent with the localization of the random laser, unique collective behaviors of the localized modes appear, as distinguished from the other modes, which reveals the “invisible” microcavities of random lasers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers

Terahertz gain in optically excited biased semiconductor superlattices

Aizhen Zhang, Dawei Wang, and M. M. Dignam

Appl. Phys. Lett. 86, 171110 (2005); http://dx.doi.org/10.1063/1.1922079 (3 pages) | Cited 5 times

Online Publication Date: 22 April 2005

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We investigate the terahertz-driven dynamics of excitons in an undoped optically excited biased semiconductor superlattice, including exciton-LO phonon scattering. We calculate the THz gain spectrum for a 820 fs THz pulse when the superlattice is excited by a 590 fs optical pulse. The gain arises because, in contrast to the single-electron case, the excitonic Wannier-Stark ladder is asymmetric with respect to absorption and emission. We find that gain coefficients greater than 100 cm−1 can be achieved at excitation densities for which domain formation should not occur.
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78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
63.20.kk Phonon interactions with other quasiparticles
71.35.-y Excitons and related phenomena
78.70.Gq Microwave and radio-frequency interactions
78.45.+h Stimulated emission
73.21.Cd Superlattices
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Electron prebunching in microwave magnetron by electric priming using anode shape modification

J. I. Kim, J. H. Won, and G. S. Park

Appl. Phys. Lett. 86, 171501 (2005); http://dx.doi.org/10.1063/1.1896098 (3 pages) | Cited 6 times

Online Publication Date: 18 April 2005

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Electric priming is proposed for electron prebunching in a microwave magnetron and is demonstrated using a particle-in-cell code. When the N/2-fold perturbation of the radial electric field using an anode shape modification is imposed in the interaction space of the N-cavity magnetron along the azimuthal direction, the electrons initially develop into the desired π-mode resulting in rapid startup. The startup is hastened from 3.2 to 1.2 ns when the radial variation of the protrusion and recession is 6.5% of the anode radius with the angular width of 6°.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
41.85.Ct Particle beam shaping, beam splitting

Rf-assisted magnetohydrodynamic power generation in a pure-argon plasma

Tomoyuki Murakami, Yoshihiro Okuno, and Hiroyuki Yamasaki

Appl. Phys. Lett. 86, 171502 (2005); http://dx.doi.org/10.1063/1.1920420 (3 pages) | Cited 10 times

Online Publication Date: 21 April 2005

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We describe seed-free pure-argon-plasma magnetohydrodynamic (MHD) power generation assisted by an external radio-frequency electromagnetic field to enhance the nonequilibrium plasma excitation process. The rf heating induces nonequilibrium ionization under a low total argon-gas temperature at which thermal ionization is insufficient. The rf-assisted plasma, the behavior of which is rather stable, contributes to continuous MHD energy conversion.
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52.75.Fk Magnetohydrodynamic generators and thermionic convertors; plasma diodes
84.60.Lw Magnetohydrodynamic conversion
52.50.Qt Plasma heating by radio-frequency fields; ICR, ICP, helicons
52.30.Cv Magnetohydrodynamics (including electron magnetohydrodynamics)
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
52.25.Jm Ionization of plasmas
52.80.-s Electric discharges
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Optical properties of GaN quantum dots grown on nonpolar (11-20) SiC by molecular-beam epitaxy

S. Founta, F. Rol, E. Bellet-Amalric, J. Bleuse, B. Daudin, B. Gayral, H. Mariette, and C. Moisson

Appl. Phys. Lett. 86, 171901 (2005); http://dx.doi.org/10.1063/1.1905807 (3 pages) | Cited 30 times

Online Publication Date: 18 April 2005

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We report on nonpolar GaN quantum dots embedded in AlN, grown on (11-20) 6H–SiC by plasma-assisted molecular-beam epitaxy. These dots are aligned in the growth plane and present a constant aspect ratio of 10. Their optical properties were studied as a function of GaN coverage. Especially, the variation of their emission energy as compared to that of (0001) GaN quantum dots is a clear fingerprint of the reduced internal electric field present in these nonpolar nanostructures. Time-resolved spectroscopy confirmed this result by revealing lifetimes in the few 100 ps range in contrast to the much longer ones obtained for the (0001) GaN quantum dots.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.Hb Quantum dots (patterned in quantum wells)
78.47.-p Spectroscopy of solid state dynamics

Strong 1.3–1.6 μm light emission from metamorphic InGaAs quantum wells on GaAs

I. Tångring, S. M. Wang, Q. F. Gu, Y. Q. Wei, M. Sadeghi, A. Larsson, Q. X. Zhao, M. N. Akram, and J. Berggren

Appl. Phys. Lett. 86, 171902 (2005); http://dx.doi.org/10.1063/1.1906308 (3 pages) | Cited 8 times

Online Publication Date: 18 April 2005

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We demonstrate strong 1.3–1.6 μm photoluminescence (PL) from InGaAs quantum wells (QWs) grown on alloy graded InGaAs buffer layers on GaAs by molecular beam epitaxy. The epistructures show quite smooth surfaces with an average surface roughness less than 2 nm. The PL intensity is comparable with those from InAs quantum dots and InGaAs QWs on GaAs, and InGaAsP QWs on InP at similar wavelengths, but stronger than those from GaInNAs QWs (at least 10 times higher at around 1.5–1.6 μm). The excellent optical quality implies that the metamorphic approach could be a promising alternative to GaInNAs(Sb) QWs for 1.55 μm lasers on GaAs.
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81.07.St Quantum wells
78.67.De Quantum wells
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
81.05.Ea III-V semiconductors
68.55.-a Thin film structure and morphology
68.47.Fg Semiconductor surfaces

Luminescent silicon carbide nanocrystallites in 3C-SiC∕polystyrene films

J. Y. Fan, X. L. Wu, F. Kong, T. Qiu, and G. S. Huang

Appl. Phys. Lett. 86, 171903 (2005); http://dx.doi.org/10.1063/1.1914962 (3 pages) | Cited 13 times

Online Publication Date: 18 April 2005

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We report optical emission of SiC nanocrystallite films, which clearly shows the quantum confinement effect. Bulk polycrystalline 3C-SiC was first electrochemically etched and then the fabricated porous silicon carbide was ultrasonically treated in water or toluene suspension to disperse into colloidal nanoparticles. Transmission electron microscopy images clearly show that the colloidal nanoparticles have 3C-SiC lattice structure with sizes varying from about 6 nm down to below 1 nm. The suspension of 3C-SiC nanocrystallites exhibits ultrabright emission with wavelengths ranging from 400 to 520 nm when the excitation wavelength varies from 250 to 480 nm, in accordance with the quantum confinement effect. By adding polystyrene to the toluene suspension containing SiC nanoparticles and coating the mixing solution onto a Si wafer, we obtain the SiC∕polystyrene films that luminesce.
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81.05.Rm Porous materials; granular materials
81.05.Hd Other semiconductors
81.07.Bc Nanocrystalline materials
61.66.Fn Inorganic compounds
81.65.Cf Surface cleaning, etching, patterning
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.43.Gt Powders, porous materials
78.40.Fy Semiconductors
82.70.Dd Colloids
82.70.Kj Emulsions and suspensions

Measurement of the refractive index of a magnetic fluid by the retroreflection on the fiber-optic end face

Shengli Pu, Xianfeng Chen, Yuping Chen, Weijun Liao, Lijun Chen, and Yuxing Xia

Appl. Phys. Lett. 86, 171904 (2005); http://dx.doi.org/10.1063/1.1905808 (3 pages) | Cited 21 times

Online Publication Date: 19 April 2005

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A simple method based on the retroreflection on the fiber-optic end face is developed to measure the refractive index of a magnetic fluid in this letter. The measuring principle, accuracy, and sensitivity of this method are analyzed theoretically, and high precision and resolution can be achieved in principle. Experimental measurements are done to investigate the concentration and temperature dependent refractive index of the magnetic fluid. The linear dependence relation is obtained for both cases. The thermo-optical coefficient of the magnetic fluid is measured to be around −2.4×10−4 °C−1.
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75.50.Mm Magnetic liquids
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
82.70.Dd Colloids
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Improved visible photoluminescence from porous silicon with surface Si–Ag bonds

J. Sun, Y. W. Lu, X. W. Du, and S. A. Kulinich

Appl. Phys. Lett. 86, 171905 (2005); http://dx.doi.org/10.1063/1.1920426 (3 pages) | Cited 13 times

Online Publication Date: 19 April 2005

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Porous silicon with surface Si–Ag bonds was prepared by a two-step method combining chemical etching and electrochemical anodization. The microstructure was analyzed by scanning electron microscopy, and the bond structure was evaluated by energy dispersion spectroscopy and Fourier transform infrared spectroscopy. The material prepared by this technique gives strong photoluminescence with improved photostability. The improvements in properties are attributed to the existence of the surface Si–Ag bonds, which are more stable compared to Si–H bonds usually observed in convenient porous silicon fabricated by electrochemical anodization.
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78.55.Ap Elemental semiconductors
78.55.Mb Porous materials
68.47.Fg Semiconductor surfaces
81.65.Cf Surface cleaning, etching, patterning
61.72.-y Defects and impurities in crystals; microstructure
81.05.Cy Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
61.43.Gt Powders, porous materials
81.05.Rm Porous materials; granular materials
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Control of the electrical and adhesion properties of metal/organic interfaces with self-assembled monolayers

Jeong Ho Cho, Jung Ah Lim, Joong Tark Han, Ho Won Jang, Jong-Lam Lee, and Kilwon Cho

Appl. Phys. Lett. 86, 171906 (2005); http://dx.doi.org/10.1063/1.1914961 (3 pages) | Cited 10 times

Online Publication Date: 19 April 2005

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With the aim of improving the electrical and adhesion properties of a noble-metal electrode (Ag)/organic interface, a SH-terminated self-assembled monolayer (SAM) that reacts with the silver atoms of the electrode was tested. Silver atoms deposited on the SH-modified surface were found to bind strongly to the terminal sulfur atoms as a result of the reaction between sulfur and silver. In contrast, silver atoms deposited onto a CH3-modified surface do not react with the SAM. The specific contact resistance of the interface between the SH-terminated surface and the silver electrode (1.31×10−2 Ω cm2) was found to be much lower than that of the silver thin film deposited on the CH3-modified surface (495.58 Ω cm2).
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
68.35.Np Adhesion
81.16.Dn Self-assembly
72.80.Le Polymers; organic compounds (including organic semiconductors)

Surface preparation of Si(001) substrate using low-pH HF solution

Yukinori Morita and Masayasu Nishizawa

Appl. Phys. Lett. 86, 171907 (2005); http://dx.doi.org/10.1063/1.1915515 (3 pages) | Cited 5 times

Online Publication Date: 20 April 2005

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We prepared atomically flat Si(001) surfaces that have well-ordered step-and-terrace structures using a low-pH (pH<1) HF solution (LPH) and subsequent low-temperature (750°⁢ C) annealing in H2. The flattening was attributed to the enhanced migration of Si atoms on the LPH-treated surface because anisotropic etching is suppressed by the low concentration of OH ions. The reduction in the H2 annealing temperature to below the decomposition temperature of Si oxide enabled us to form an atomically flat Si(001) surface in a window area surrounded by a thick device isolation oxide.
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81.65.Cf Surface cleaning, etching, patterning
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Atomically flat (110) SrTiO3 and heteroepitaxy

Y. Mukunoki, N. Nakagawa, T. Susaki, and H. Y. Hwang

Appl. Phys. Lett. 86, 171908 (2005); http://dx.doi.org/10.1063/1.1920415 (3 pages) | Cited 26 times

Online Publication Date: 20 April 2005

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We have prepared an atomically flat and insulating (110) SrTiO3 surface by annealing at high temperature under varying oxygen partial pressure. At low pressure, the polar surface is stabilized by oxygen vacancies, resulting in an atomically flat surface characterized by (110) unit-cell steps. The vacancies can be filled while maintaining this surface structure, providing an atomically ideal (110) substrate. We demonstrate two-dimensional homoepitaxial and heteroepitaxial growth, establishing the potential of this growth orientation for controlling interface states arising from polarity discontinuities in perovskite heterostructures.
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68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.40.Gh Other heat and thermomechanical treatments

Propagation of shear bands in Ti66.1Cu8Ni4.8Sn7.2Nb13.9 nanostructure-dendrite composite during deformation

K. B. Kim, J. Das, F. Baier, and J. Eckert

Appl. Phys. Lett. 86, 171909 (2005); http://dx.doi.org/10.1063/1.1920424 (3 pages) | Cited 30 times

Online Publication Date: 20 April 2005

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During deformation of Ti66.1Cu8Ni4.8Sn7.2Nb13.9 nanostructure-dendrite composite, primary and secondary shear bands form under perpendicular orientation. Detailed investigation of the microstructure of deformed specimens reveals deformed body-centered-cubic (bcc) β-Ti dendrites forming a stepped morphology at the interfaces between the bcc β-Ti dendrites and the nanostructured matrix, consisting of hexagonal close packed (hcp) α-Ti and body-centered-tetragonal (bct) Ti2Cu phases. In the nanostructured matrix, the primary shear bands pass through coherent grain boundaries between the hcp α-Ti and the bct Ti2Cu phases. In contrast, the secondary shear bands in the nanostructured matrix are arrested by sandwiched nanoscale grains of the hcp α-Ti and bct Ti2Cu phases.
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68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
81.05.Mh Cermets, ceramic and refractory composites
81.07.Bc Nanocrystalline materials
61.72.Mm Grain and twin boundaries
68.35.Ct Interface structure and roughness
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)
68.37.Lp Transmission electron microscopy (TEM)

Selective metallization of internal walls of hollow structures inside glass using femtosecond laser

Koji Sugioka, Tomohiro Hongo, Hiroshi Takai, and Katsumi Midorikawa

Appl. Phys. Lett. 86, 171910 (2005); http://dx.doi.org/10.1063/1.1921355 (3 pages) | Cited 5 times

Online Publication Date: 20 April 2005

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The selective metallization of glass is demonstrated by femtosecond laser direct writing in an electroless plating solution. The multiphoton absorption of a femtosecond laser by transparent glass makes it possible to selectively deposit copper thin films on the internal walls of hollow microstructures fabricated inside the glass. We regard the mechanism of this process as the reducing reaction of metal ions in the electroless plating solution by the free electrons generated in the glass by the multiphoton absorption of the femtosecond laser.
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85.40.Ls Metallization, contacts, interconnects; device isolation
81.15.Pq Electrodeposition, electroplating
42.62.-b Laser applications
06.60.Jn High-speed techniques (microsecond to femtosecond)

Strain-compensated AlInGaAs–GaAsP superlattices for highly polarized electron emission

A. V. Subashiev, L. G. Gerchikov, Y. A. Mamaev, Y. P. Yashin, J. S. Roberts, D.-A. Luh, T. Maruyama, and J. E. Clendenin

Appl. Phys. Lett. 86, 171911 (2005); http://dx.doi.org/10.1063/1.1920416 (3 pages) | Cited 4 times

Online Publication Date: 21 April 2005

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Spin-polarized electron emission from superlattice photocathodes developed with strain compensation is investigated. An opposite strain in the quantum well and barrier layers is accomplished using an InAlGaAs/GaAsP superlattice structure. The measured values of maximum polarization and quantum yield for the structure with a 0.18 μm thick working layer are excellent results for a strained superlattice photocathode structure, demonstrating the high potential of strain compensation for future photocathode applications. An analysis of the photoemission spectra is used to estimate the parameters responsible for the polarization losses.
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81.05.Ea III-V semiconductors
85.60.Ha Photomultipliers; phototubes and photocathodes
78.66.Fd III-V semiconductors
79.60.Bm Clean metal, semiconductor, and insulator surfaces
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Thermal and electrical conductivity of a suspended platinum nanofilm

Xing Zhang, Huaqing Xie, Motoo Fujii, Hiroki Ago, Koji Takahashi, Tatsuya Ikuta, Hidekazu Abe, and Tetsuo Shimizu

Appl. Phys. Lett. 86, 171912 (2005); http://dx.doi.org/10.1063/1.1921350 (3 pages) | Cited 32 times

Online Publication Date: 21 April 2005

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This letter reports on the measurements of the in-plane thermal conductivity and the electrical conductivity of a microfabricated, suspended, nanosized platinum thin film with the width of 260 nm, the thickness of 28 nm, and the length of 5.3 μm. The experimental results show that the electrical conductivity, the resistance-temperature coefficient and the in-plane thermal conductivity of the nanofilm are greatly lower than the corresponding bulk values from 77 to 330 K. The comparison results indicate that the relation between the thermal conductivity and the electrical conductivity of this nanofilm might not follow the Wiedemann–Franz law that describes the relation between the thermal conductivity and the electrical conductivity of a bulk metallic material.
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72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
73.61.At Metal and metallic alloys

Superhard nanocrystalline silicon carbide films

Feng Liao, S. L. Girshick, W. M. Mook, W. W. Gerberich, and M. R. Zachariah

Appl. Phys. Lett. 86, 171913 (2005); http://dx.doi.org/10.1063/1.1920434 (3 pages) | Cited 27 times

Online Publication Date: 22 April 2005

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Nanocrystalline silicon carbide films were deposited by thermal plasma chemical vapor deposition, with film growth rates on the order of 10 μm/min. Films were deposited on molybdenum substrates, with substrate temperature ranging from 750-1250 °C. The films are composed primarily of β-SiC nanocrystallites. Film mechanical properties were investigated by nanoindentation. As substrate temperature increased the average grain size, the crystalline fraction in the film, and the hardness all increased. For substrate temperatures above 1200 °C the average grain size equaled 10-20 nm, the crystalline fraction equaled 80-85 %, and the film hardness equaled approximately 50 GPa.
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81.05.Hd Other semiconductors
68.55.A- Nucleation and growth
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties
61.46.-w Structure of nanoscale materials
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.Qp Friction, tribology, and hardness
68.35.Gy Mechanical properties; surface strains
62.25.-g Mechanical properties of nanoscale systems
81.07.Bc Nanocrystalline materials
52.77.Dq Plasma-based ion implantation and deposition
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