APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

2 May 2005

Volume 86, Issue 18, Articles (18xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 181101 (2005); http://dx.doi.org/10.1063/1.1920407 (3 pages)

Giacomo Scalari, Nicolas Hoyler, Marcella Giovannini, and Jérôme Faist
Enlarge Image | Read More
Page 2 of 3 Pages Previous Page Next Page | Jump to Page
back to top
RSS Feeds

Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p‐n junction dopant profiling

J. Yang, J. J. Kopanski, A. Postula, and M. Bialkowski

Appl. Phys. Lett. 86, 182101 (2005); http://dx.doi.org/10.1063/1.1922077 (3 pages) | Cited 3 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Controlled polishing procedures were used to produce both uniformly doped and p‐n junction silicon samples with different interface state densities but identical oxide thicknesses. Using these samples, the effects of interface states on scanning capacitance microscopy (SCM) measurements could be singled out. SCM measurements on the junction samples were performed with and without illumination from the atomic force microscopy laser. Both the interface charges and the illumination were seen to affect the SCM signal near p‐n junctions significantly. SCM p‐n junction dopant profiling can be achieved by avoiding or correctly modeling these two factors in the experiment and in the simulation.
Show PACS
81.05.Cy Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.-r Electron states at surfaces and interfaces
61.72.S- Impurities in crystals
73.61.Cw Elemental semiconductors
72.40.+w Photoconduction and photovoltaic effects
68.37.Ps Atomic force microscopy (AFM)
81.65.Ps Polishing, grinding, surface finishing

Carbon nanotubes-semiconductor networks for organic electronics: The pickup stick transistor

X.-Z. Bo, C. Y. Lee, M. S. Strano, M. Goldfinger, C. Nuckolls, and Graciela B. Blanchet

Appl. Phys. Lett. 86, 182102 (2005); http://dx.doi.org/10.1063/1.1906316 (3 pages) | Cited 34 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate an alternative path for achieving high transconductance organic transistors in spite of relatively large source to drain distances. The improvement of the electronic characteristic of such a scheme is equivalent to a 60-fold increase in mobility of the underlying organic semiconductor. The method is based on percolating networks, which we create from a dispersion of individual single-wall carbon nanotubes and narrow ropes within an organic semiconducting host. The majority of current paths between source and drain follow the metallic nanotubes but require a short, switchable semiconducting link to complete the circuit. With these nanotube-semiconducting composites we achieve effectively a 60× reduction in source to drain distance, which is equivalent to a 60-fold increase of the “effective” mobility of the starting semiconducting material with a minor decrease of the on/off current ratio. These field-induced percolating networks allow for the fabrication of high-transconductance transistors having relatively large source to drain distances that can be manufactured inexpensively by commercially available printing techniques.
Show PACS
85.35.Kt Nanotube devices
85.30.Tv Field effect devices

High-field optically detected nuclear magnetic resonance in GaAs

M. Poggio and D. D. Awschalom

Appl. Phys. Lett. 86, 182103 (2005); http://dx.doi.org/10.1063/1.1923191 (3 pages) | Cited 5 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A method for high-field optically detected nuclear magnetic resonance (ODNMR) is developed sensitive to 108 nuclei. Nuclear spin transitions are induced using a radio frequency coil and detected through Faraday rotation spectroscopy. Unlike conventional ODNMR, which is limited to low fields and relies on the measurement of time-averaged luminescence polarization, this technique monitors nuclear polarization through time-resolved measurements of electron spin dynamics. Measurements in a (110) GaAs quantum well reveal math, math, and math resonances and their quadrupolar splittings while resolving changes in nuclear polarization of 0.02%.
Show PACS
75.75.-c Magnetic properties of nanostructures
76.60.-k Nuclear magnetic resonance and relaxation

Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

X. Xu, R. Armitage, Satoko Shinkai, Katsutaka Sasaki, C. Kisielowski, and E. R. Weber

Appl. Phys. Lett. 86, 182104 (2005); http://dx.doi.org/10.1063/1.1923192 (3 pages) | Cited 3 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Single-crystal GaN thin films have been deposited epitaxially on a HfN-buffered Si(111) substrates by molecular-beam epitaxy. The microstructural and compositional characteristics of the films were studied in detail by transmission electron microscopy (TEMs). Cross-sectional TEM investigations have revealed the crystallographic orientation relationship in different GaN/HfN/Si layers. GaN film polarity is studied by conventional TEM and convergent beam electron diffraction simulations, and the results show that the GaN film has a Ga polarity with relatively high density of inversion domains. Based on our observations, growth mechanisms related to the structural properties are discussed.
Show PACS
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.45.Mp Thin layers, films, monolayers, membranes
back to top
RSS Feeds

Strain and anisotropy effects on spin waves in epitaxial La0.67Sr0.33MnO3 films

D. Talbayev, H. Zhao, G. Lüpke, J. Chen, and Qi Li

Appl. Phys. Lett. 86, 182501 (2005); http://dx.doi.org/10.1063/1.1922073 (3 pages) | Cited 7 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Uniform magnetization precession in the ferromagnetic state of La0.67Sr0.33MnO3 films grown on different substrates is investigated in the 50–300 K temperature range in magnetic fields of up to 1.3 T. The precession was induced by an optical pump pulse and probed by a time-delayed pulse using magneto-optical Kerr effect. The measured field dependence of the precession frequency agrees well with calculation from the Landau-Lifshitz-Gilbert equation using different uniaxial anisotropies for different substrates. The field-dependent relaxation times of the exponentially decaying precession are in 100–1400 ps range.
Show PACS
75.50.Dd Nonmetallic ferromagnetic materials
75.30.Gw Magnetic anisotropy
75.70.Ak Magnetic properties of monolayers and thin films
75.30.Ds Spin waves
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
75.40.Gb Dynamic properties (dynamic susceptibility, spin waves, spin diffusion, dynamic scaling, etc.)
78.20.Ls Magneto-optical effects
78.47.-p Spectroscopy of solid state dynamics

Pd/Ag and Pd/Au interface specific resistances and interfacial spin flipping

C. Galinon, K. Tewolde, R. Loloee, W.-C. Chiang, S. Olson, H. Kurt, W. P. Pratt, J. Bass, P. X. Xu, Ke Xia, and M. Talanana

Appl. Phys. Lett. 86, 182502 (2005); http://dx.doi.org/10.1063/1.1920421 (3 pages) | Cited 15 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We measured the specific resistances, 2ARPd/Ag and 2ARPd/Au (sample area A times resistance R), and spin-flip probabilities δPd/Ag and δPd/Au for Pd/Ag and Pd/Au interfaces with current perpendicular to the interfaces. 2ARPd/Ag = 0.7±0.15 fΩm2 and 2ARPd/Au = 0.45±0.15 fΩm2 are smaller than our revised estimate of 2ARPd/Cu = 0.85±0.15 fΩm2, and lie further from no-free-parameter calculations. Our estimates of δPd/Ag = 0.15±0.08 and δPd/Ag = 0.08±0.08 are less than our prior estimate of δPd/Cu ∼ 0.24.
Show PACS
73.40.Jn Metal-to-metal contacts

Evolution of ferromagnetic circular dichroism coincident with magnetization and anomalous Hall effect in Co-doped rutile TiO2

H. Toyosaki, T. Fukumura, Y. Yamada, and M. Kawasaki

Appl. Phys. Lett. 86, 182503 (2005); http://dx.doi.org/10.1063/1.1922569 (3 pages) | Cited 29 times

Online Publication Date: 26 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Magnetic circular dichroism (MCD) of rutile Ti1−xCoxO2−δ is systematically examined with various x and δ to reveal a phase diagram for the appearance of ferromagnetism at higher carrier concentration and Co content. The phase diagram exactly matches with that determined from anomalous Hall effect (AHE). The magnetic field dependence of MCD also shows good coincidence with those of the magnetization and AHE. The coincidence of these independent measurements strongly suggests single and intrinsic ferromagnetic origin.
Show PACS
75.50.Pp Magnetic semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
75.50.Dd Nonmetallic ferromagnetic materials
78.20.Ls Magneto-optical effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
75.40.Cx Static properties (order parameter, static susceptibility, heat capacities, critical exponents, etc.)
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

Phase control through anisotropic strain in Nd0.5Sr0.5MnO3 thin films

Masao Nakamura, Yasushi Ogimoto, Hiroharu Tamaru, Makoto Izumi, and Kenjiro Miyano

Appl. Phys. Lett. 86, 182504 (2005); http://dx.doi.org/10.1063/1.1923754 (3 pages) | Cited 47 times

Online Publication Date: 27 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Strain effect in charge- and orbital-ordered state has been investigated for Nd0.5Sr0.5MnO3 thin films deposited on (100), (110), and (111)-oriented substrates of SrTiO3. Films on (001) and (111) substrates have a monotonous temperature dependence for magnetic and transport properties showing no first-order phase transition. On the other hand, films on (110) substrate show a clear ferromagnetic-antiferromagnetic and metal-insulator transition around 170 K similar to that in a bulk single crystal, which is a manifestation of the charge and orbital order. Precise control of the hole concentration was also demonstrated around half doping.
Show PACS
73.61.Ng Insulators
72.60.+g Mixed conductivity and conductivity transitions
71.45.-d Collective effects
75.30.Kz Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)
68.60.Bs Mechanical and acoustical properties
71.30.+h Metal-insulator transitions and other electronic transitions

Planar magnetoinductive lens for three-dimensional subwavelength imaging

M. J. Freire and R. Marqués

Appl. Phys. Lett. 86, 182505 (2005); http://dx.doi.org/10.1063/1.1922074 (3 pages) | Cited 68 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A planar near-field magnetoinductive lens operating in the microwave range is presented. The proposed device consists of two parallel planar arrays of metallic broadside coupled (BC) split-ring resonators (SRRs), or BC-SRRs. The power coming from a point-like source located in front of the lens is focused into a receiver located in free space beyond the lens. This focus is clearly separated from the back side of the lens, and has a size that is an order of magnitude smaller than the free space wavelength of the incoming field. The imaging properties of the device relies mainly on the excitation of magnetoinductive surface waves on the BC-SRR arrays. By simply scaling the BC-SRRs’ size, as well as the arrays periodicity, the operation frequency of the device can be tuned in a wide frequency range. Thus, the proposed design is potentially useful for many applications ranging from megahertz to terahertz.
Show PACS
84.40.-x Radiowave and microwave (including millimeter wave) technology
07.57.-c Infrared, submillimeter wave, microwave and radiowave instruments and equipment

Circumferential-mode, quasi-ring-type, magnetoelectric laminate composite—a highly sensitive electric current and∕or vortex magnetic field sensor

Shuxiang Dong, John G. Bai, Junyi Zhai, Jie-Fang Li, G.-Q. Lu, D. Viehland, Shujun Zhang, and T. R. Shrout

Appl. Phys. Lett. 86, 182506 (2005); http://dx.doi.org/10.1063/1.1923184 (3 pages) | Cited 24 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
A quasi-ring-type magnetoelectric (ME) laminate composite consisting of a circumferentially poled piezoelectric Pb(Zn1/3Nb2/3O)3‐4.5 at. % PbTiO3single-crystal ring and two circumferentially magnetized magnetostrictive TERFENOL-D rings was fabricated and found to have a giant ME voltage coefficient of 2.2 V/Oe, or equivalently a ME field coefficient of 5.5 V/cm Oe, over the frequency range of 0.5<f<105 Hz. This circumferential-mode quasiring ME laminate can detect ac currents (noncontact) as small as 10−7 A, and∕or a vortex magnetic field as small as 6×10−12 Tesla. In addition, we demonstrated current sensing capability of the quasiring laminate in a power electronics module.
Show PACS
75.80.+q Magnetomechanical effects, magnetostriction
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
07.55.-w Magnetic instruments and components

Large negative magnetoresistance in quaternary Heusler alloy Ni50Mn8Fe17Ga25 melt-spun ribbons

Z. H. Liu, H. Liu, X. X. Zhang, X. K. Zhang, John Q. Xiao, Z. Y. Zhu, X. F. Dai, G. D. Liu, J. L. Chen, and G. H. Wu

Appl. Phys. Lett. 86, 182507 (2005); http://dx.doi.org/10.1063/1.1925783 (3 pages) | Cited 15 times

Online Publication Date: 29 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Quaternary Heusler alloy Ni50Mn8Fe17Ga25 ribbons have been prepared by the melt-spun method. The ribbons exhibit large negative magnetoresistance (MR){ = [R(H)−R(0)]/R(0)} over a wide temperature region, particularly in the region during the martensitic phase transformation. The MR decreases significantly after annealing. The large MR is isotropic and is mainly attributed to the local magnetic disorders, magnetic clusters, and heterogeneity. The maximum MR at martensitic transformation may be due to the redistribution of electrons and the increase of phase boundary scattering. This feature adds a useful functionality to the already interesting Heusler alloys.
Show PACS
81.05.Bx Metals, semimetals, and alloys
75.50.Bb Fe and its alloys
75.47.De Giant magnetoresistance
64.70.K- Solid-solid transitions
81.20.-n Methods of materials synthesis and materials processing
81.40.Gh Other heat and thermomechanical treatments
back to top
RSS Feeds

Substitution mechanism of ZnO-doped lithium niobate crystal determined by powder x-ray diffraction and coercive field

C.-T. Chia, C.-C. Lee, P.-J. Chang, M.-L. Hu, and L. J. Hu

Appl. Phys. Lett. 86, 182901 (2005); http://dx.doi.org/10.1063/1.1922083 (3 pages) | Cited 7 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
ZnO-doped lithium niobate crystals with a doped concentration of up to 8.3 mol % were grown by the Czochralski technique. The effects of incorporating Zn2+ ions into LiNbO3 crystals were studied by powder x-ray diffraction and taking polarization hysteresis loop measurements. When the Li-site vacancy model is adopted, the coercive fields obtained from the polarization reversal measurement depend strongly on the number of NbLi4−+4VLi−. However, the coercive field of Zn-doped ions into LiNbO3 is insensitive to the ZnLi2++VLi−. Experimental results indicate that four distinct substitutions of Zn−2 ions incorporated into ions into LiNbO3 crystals for doping concentrations from 0 to 8.3 mol %. The extent of Zn substitution is quantitatively determined for doping of below 7.5 mol %.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
61.72.up Other materials
77.80.Fm Switching phenomena
61.72.J- Point defects and defect clusters

Mechanism of structural transformation in bismuth titanate

Sudhanshu Mallick, Keith J. Bowman, and Alexander H. King

Appl. Phys. Lett. 86, 182902 (2005); http://dx.doi.org/10.1063/1.1919390 (2 pages) | Cited 5 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Sodium-doped bismuth titanate undergoes a transformation from Bi4Ti3O12 to Na0.5Bi4.5Ti4O15 on heating in air at temperatures exceeding 800 °C. This transformation proceeds through the intermediate Na0.5Bi8.5Ti7O27 structure which is an intergrowth phase of the two. High-resolution transmission electron microscopy was used to study this transformation. From the Moiré pattern that was obtained, the crystallographic orientation of the transformation front has been determined and a mechanism is proposed for this structural transformation.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Po-Tsun Liu, T. M. Tsai, and T. C. Chang

Appl. Phys. Lett. 86, 182903 (2005); http://dx.doi.org/10.1063/1.1921329 (3 pages) | Cited 2 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150 °C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.05.Rm Porous materials; granular materials
84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Fe Electron and positron radiation effects
61.82.Fk Semiconductors
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
73.61.-r Electrical properties of specific thin films

Microwave dielectric relaxation of the polycrystalline (Ba,Sr)TiO3 thin films

Taeho Moon, Byungjoo Lee, Tae-Gon Kim, Jeongmin Oh, Young Woo Noh, Sangwook Nam, and Byungwoo Park

Appl. Phys. Lett. 86, 182904 (2005); http://dx.doi.org/10.1063/1.1923760 (3 pages) | Cited 8 times

Online Publication Date: 27 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The microwave dielectric properties of the (Ba,Sr)TiO3 thin films annealed at various oxygen pressures ranging from 5 to 500 mTorr were investigated over the frequency range 0.5–5 GHz using a circular-patch capacitor geometry. The dielectric constant (ε) followed Curie–von Schweidler relaxation in the microwave-frequency range, and the degree of relaxation corresponded qualitatively with the measured dielectric loss (tan δ). As the oxygen pressure varied, the dielectric loss had a maximum value of ∼ 0.03 at 100 mTorr, and its behavior was correlated with the Raman strength of the polar modes.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.66.Nk Insulators

Low symmetry phase in (001) BiFeO3 epitaxial constrained thin films

Guangyong Xu, H. Hiraka, G. Shirane, Jiefang Li, Junling Wang, and D. Viehland

Appl. Phys. Lett. 86, 182905 (2005); http://dx.doi.org/10.1063/1.1924891 (3 pages) | Cited 64 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
The lattice of (001)-oriented BiFeO3 epitaxial thin film has been identified by synchrotron x-ray diffraction. By choosing proper scattering zones containing the fixed (001) reflection, we have shown that low-symmetry phases similar to a MA phase exist in the thin film at room temperature. These results demonstrate a change in phase stability from rhombohedral in bulk single crystals, to a modified monoclinic structure in epitaxial thin films.
Show PACS
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
75.50.Ee Antiferromagnetics
68.55.-a Thin film structure and morphology
61.66.Fn Inorganic compounds
77.80.-e Ferroelectricity and antiferroelectricity
back to top
RSS Feeds

Room-temperature resonant tunneling of electrons in carbon nanotube junction quantum wells

Sujit K. Biswas, Leo J. Schowalter, Yung Joon Jung, Aravind Vijayaraghavan, Pulickel M. Ajayan, and Robert Vajtai

Appl. Phys. Lett. 86, 183101 (2005); http://dx.doi.org/10.1063/1.1915528 (3 pages) | Cited 15 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Resonant tunneling structures [ M. Bockrath, W. Liang, D. Bozovic, J. H. Hafner, C. B. Lieber, M. Tinkham, and H. Park, Science 291, 283 (2001) ], formed between the junction of two single walled nanotubes and the conductive atomic force microscopy tip contact were investigated using current sensing atomic force microscopy. Oscillations in the current voltage characteristics were measured at several positions of the investigated nanotube. The oscillatory behavior is shown to follow a simple quantum mechanical model, dependent on the energy separation in the quantum well formed within the two junctions. Our model shows that these observations seen over several hundreds of nanometers, are possible only if the scattering cross section at defects is small resulting in long phase coherence length, and if the effective mass of the carrier electrons is small. We have calculated the approximate mass of the conduction electrons to be 0.003 me.
Show PACS
81.07.De Nanotubes
81.07.St Quantum wells
73.63.Hs Quantum wells
73.21.Fg Quantum wells
73.63.Fg Nanotubes
73.23.-b Electronic transport in mesoscopic systems
73.22.-f Electronic structure of nanoscale materials and related systems
73.40.Gk Tunneling
68.37.Ps Atomic force microscopy (AFM)

Resonant-tunneling electron emitter in an AlN/GaN system

A. Ishida, Y. Inoue, and H. Fujiyasu

Appl. Phys. Lett. 86, 183102 (2005); http://dx.doi.org/10.1063/1.1922081 (3 pages) | Cited 5 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
An AlN/GaN multiple-barrier resonant-tunneling electron emitter is proposed in this letter, utilizing polarization fields in the AlN/GaN heterostructure. The resonant-tunneling voltage is extremely high, compared with usual resonant-tunneling devices, due to the polarization field in the heterostructure, and this high resonant voltage enables practical use of the devices. Selective and high-density electron emission is to be expected through the resonant-tunneling layer and GaN surface accelerating layer.
Show PACS
79.70.+q Field emission, ionization, evaporation, and desorption
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Enhanced luminescent and electrical properties of hydrogen-plasma ZnO nanorods grown on wafer-scale flexible substrates

Chin-Ching Lin, Hung-Pei Chen, Hung-Chou Liao, and San-Yuan Chen

Appl. Phys. Lett. 86, 183103 (2005); http://dx.doi.org/10.1063/1.1904715 (3 pages) | Cited 45 times

Online Publication Date: 25 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Photoelectronic characteristics are performed in well-aligned hydrogen-plasma ZnO nanorods grown on 4 in. flexible organic substrates buffered with ZnO film. Enhancement of photoluminescence (PL) properties due to H2 plasma treatment by a factor of 60 times for relative intensity ratio (ultraviolet emission to deep level emission) has been observed. X-ray photoelectron spectroscopy analysis reveals that the enhanced PL property is attributed to both defect passivation and modification on the surface region of ZnO nanorods due to the absorption of hydrogen ions. However, the PL spectra of H2 plasma ZnO nanorods can be restored to the original state of ZnO nanorods by thermal annealing process. The current-voltage measurements suggest that the n-type ZnO nanorods with H2 plasma treatment present a higher conductivity of about 5–6 orders of magnitude than the nonplasma ZnO nanorods.
Show PACS
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
73.63.Bd Nanocrystalline materials
78.66.Hf II-VI semiconductors
73.61.Ga II-VI semiconductors
78.55.Et II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
71.55.Gs II-VI semiconductors
61.46.-w Structure of nanoscale materials
61.72.Cc Kinetics of defect formation and annealing
68.43.Mn Adsorption kinetics
79.60.Dp Adsorbed layers and thin films
79.60.Jv Interfaces; heterostructures; nanostructures
79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.37.Xy Scanning Auger microscopy, photoelectron microscopy

Position- and size-controlled fabrication of iron silicide nanorods by electron-beam-induced deposition using an ultrahigh-vacuum transmission electron microscope

M. Tanaka, F. Chu, M. Shimojo, M. Takeguchi, K. Mitsuishi, and K. Furuya

Appl. Phys. Lett. 86, 183104 (2005); http://dx.doi.org/10.1063/1.1922576 (3 pages) | Cited 15 times

Online Publication Date: 27 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We have fabricated arrays of nanorods of cubic iron silicide from iron pentacarbonyl gas source on Si(111) substrates by electron-beam-induced deposition at elevated temperature in an ultrahigh-vacuum transmission electron microscope. The nanorods are aligned along one of the Si〈110〉 directions. Their length could be controlled by changing the irradiation time. It was revealed that the vicinity of the substrate surface influences the growth direction and location of the nanorods.
Show PACS
81.07.Bc Nanocrystalline materials
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.46.-w Structure of nanoscale materials

The directed-assembly of CdS interconnects between targeted points in a circuit

Birol Ozturk, Ishan Talukdar, and Bret N. Flanders

Appl. Phys. Lett. 86, 183105 (2005); http://dx.doi.org/10.1063/1.1920432 (3 pages) | Cited 10 times

Online Publication Date: 27 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We demonstrate the one-step dielectrophoretic assembly and interfacing of individual interconnects from populations of 3.7 nm CdS nanoparticles between targeted points in a circuit. We further show that the nanoparticles fuse into bulk CdS during the fabrication process. This finding is significant because it establishes a critical step towards the fabrication of structurally continuous semiconducting interconnects from nanoscopic building blocks.
Show PACS
81.05.Dz II-VI semiconductors
85.40.Ls Metallization, contacts, interconnects; device isolation
81.16.-c Methods of micro- and nanofabrication and processing

Integrated tungsten nanofiber field emission cathodes selectively grown by nanoscale electron beam-induced deposition

X. Yang, M. L. Simpson, S. J. Randolph, P. D. Rack, L. R. Baylor, H. Cui, and W. L. Gardner

Appl. Phys. Lett. 86, 183106 (2005); http://dx.doi.org/10.1063/1.1922568 (3 pages) | Cited 7 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report on the fabrication and operation of integrated field emission cathodes containing single tungsten (W) nanofibers selectively grown by nanoscale electron beam induced deposition (EBID). A nonorganometallic precursor, WF6, was used to deposit metallic W fibers. Vacuum electrical testing reveals electrons were successfully extracted from the W nanofiber tip and were collected by a phosphor anode. Direct current versus voltage (I–V) curves exhibited Fowler–Nordheim behavior, indicating the occurrence of cold field emission. Electrical testing of these devices indicated that EBID direct-write is a promising technique for direct production or repair of field emission cathodes.
Show PACS
85.45.Bz Vacuum microelectronic device characterization, design, and modeling
85.35.-p Nanoelectronic devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.70.+q Field emission, ionization, evaporation, and desorption

Complex oxide nanostructures by pulsed laser deposition through nanostencils

Cristian-Victor Cojocaru, Catalin Harnagea, Federico Rosei, Alain Pignolet, Marc A. F. van den Boogaart, and Jürgen Brugger

Appl. Phys. Lett. 86, 183107 (2005); http://dx.doi.org/10.1063/1.1923764 (3 pages) | Cited 26 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We achieved parallel nanoscale patterning of ferroelectric complex oxides by pulsed laser deposition through a nanostencil (i.e., through a pattern of apertures in a thin free-standing membrane). Ordered arrays of nanostructured barium titanate (BaTiO3) were obtained onto different substrates in a single deposition step, at room temperature, replicating accurately the aperture patterns in the stencil membrane. After a postdeposition annealing treatment, x-ray diffraction pattern showed a nanocrystalline BaTiO3 structure close to the perovskite cubic phase with grains 30–35 nm in size. Their local ferroelectric properties were detected using piezoresponse force microscopy.
Show PACS
77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
81.07.Bc Nanocrystalline materials
81.16.Mk Laser-assisted deposition
81.15.Fg Pulsed laser ablation deposition
81.16.Rf Micro- and nanoscale pattern formation
61.46.-w Structure of nanoscale materials
77.80.-e Ferroelectricity and antiferroelectricity
61.66.Fn Inorganic compounds
77.65.-j Piezoelectricity and electromechanical effects
81.40.Gh Other heat and thermomechanical treatments

Toward the formation of three-dimensional nanostructures by electrochemical etching of silicon

P. Kleimann, X. Badel, and J. Linnros

Appl. Phys. Lett. 86, 183108 (2005); http://dx.doi.org/10.1063/1.1924883 (3 pages) | Cited 16 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We report a simple technique to form various kinds of three-dimensional structures in silicon. The process flow is only composed of two steps: lithography and electrochemical etching (“LEE”). The LEE process is an easy and low-cost solution for the fabrication of high-aspect-ratio structures such as walls, tubes, and pillars. Here we demonstrate the possibility to apply the LEE process on the submicrometer scale, indicating that it is a promising tool for silicon nanomachining.
Show PACS
81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
81.65.Cf Surface cleaning, etching, patterning
81.16.Nd Micro- and nanolithography
82.45.Aa Electrochemical synthesis

Remarkable polarization sensitivity of gold nanoparticle arrays

Brian K. Canfield, Sami Kujala, Martti Kauranen, Konstantins Jefimovs, Tuomas Vallius, and Jari Turunen

Appl. Phys. Lett. 86, 183109 (2005); http://dx.doi.org/10.1063/1.1924886 (3 pages) | Cited 21 times

Online Publication Date: 28 April 2005

Full Text: Read Online (HTML) | Download PDF

Show Abstract
In an array of low-symmetry, L-shaped gold nanoparticles, slight distortions of particle shape and arm lengths eliminate the array’s mirror plane. Such asymmetries induce large angular shifts ( ∼ 10°) of the resonant extinction axes directions from those of mirror-symmetric particles. The axes directions exhibit dispersion, as allowed by the lack of any structural features dictating them. The nanostructures are chiral, and evidence of optical activity is observed. Rigorous diffraction theory calculations qualitatively reproduce the data.
Show PACS
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.20.Ek Optical activity
42.25.Ja Polarization
Page 2 of 3 Pages Previous Page Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close