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2 May 2005

Volume 86, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 86, 181101 (2005); http://dx.doi.org/10.1063/1.1920407 (3 pages)

Giacomo Scalari, Nicolas Hoyler, Marcella Giovannini, and Jérôme Faist
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Generation of high-confinement step-like optical waveguides in LiNbO3 by swift heavy ion-beam irradiation

J. Olivares, G. García, A. García-Navarro, F. Agulló-López, O. Caballero, and A. García-Cabañes

Appl. Phys. Lett. 86, 183501 (2005); http://dx.doi.org/10.1063/1.1922082 (3 pages) | Cited 54 times

Online Publication Date: 26 April 2005

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We demonstrate a swift ion-beam irradiation procedure based on electronic (not nuclear) excitation to generate a large index jump step-like optical waveguide (Δn0 ≈ 0.2, Δne ≈ 0.1) in LiNbO3. The method uses medium-mass ions with a kinetic energy high enough to assure that their electronic stopping power Se(z) reaches a maximum value close to the amorphous (latent) track threshold inside the crystal. Fluorine ions of 20 and 22 MeV and fluences in the range (1–30)×1014 are used for this work. A buried amorphous layer having a low refractive index (2.10 at a wavelength of 633 nm) is then generated at a controlled depth in LiNbO3, whose thickness is also tuned by irradiation fluence. The layer left at the surface remains crystalline and constitutes the core of the optical waveguide which, moreover, is several microns far from the end of the ion range. The waveguides show, after annealing at 300 °C, low propagation losses ( ≈ 1 dB/cm) and a high second-harmonic generation coefficient (50%–80% of that for bulk unirradiated LiNbO3, depending on the fluence). The formation and structure of the amorphous layer has been monitored by additional Rutherford backscattering/channeling experiments.
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42.79.Gn Optical waveguides and couplers
42.86.+b Optical workshop techniques
61.80.Jh Ion radiation effects
61.72.up Other materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
61.43.Er Other amorphous solids

Electroluminescence in polymer-fullerene photovoltaic cells

Heejoo Kim, Jin Young Kim, Sung Heum Park, Kwanghee Lee, Youngeup Jin, Jinwoo Kim, and Hongsuk Suh

Appl. Phys. Lett. 86, 183502 (2005); http://dx.doi.org/10.1063/1.1924869 (3 pages) | Cited 31 times

Online Publication Date: 28 April 2005

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We report electroluminescence (EL) in photovoltaic (PV) cells based on semiconducting polymer-fullerene composites. By applying a forward bias to the PV cells, the devices exhibited a clear EL action with a peak around 1.5 eV. We ascribe this peak to an “electric field-assisted exciplex” formed between the electrons in the fullerenes and the holes in the polymers, thereby resulting in radiative recombination in the composites. This finding is totally unexpected because of a strong photoluminescence quenching in the same materials. Since the same devices also showed typical photovoltaic effects under illumination, our results demonstrate a dual functionality in one device; polymer photovoltaic cells and polymer light-emitting diodes.
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81.05.Qk Reinforced polymers and polymer-based composites
85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence
78.55.Kz Solid organic materials

Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

Han-Ki Kim, D.-G. Kim, K.-S. Lee, M.-S. Huh, S. H. Jeong, K. I. Kim, and Tae-Yeon Seong

Appl. Phys. Lett. 86, 183503 (2005); http://dx.doi.org/10.1063/1.1923182 (3 pages) | Cited 49 times

Online Publication Date: 29 April 2005

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We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2×10−5 mA/cm2) at reverse bias of −6 V as compared to that (1×10−1–10−2 mA/cm2 at −6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.
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81.15.Cd Deposition by sputtering
85.60.Jb Light-emitting devices
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