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2 May 2005

Volume 86, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 86, 181101 (2005); http://dx.doi.org/10.1063/1.1920407 (3 pages)

Giacomo Scalari, Nicolas Hoyler, Marcella Giovannini, and Jérôme Faist
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Substitution mechanism of ZnO-doped lithium niobate crystal determined by powder x-ray diffraction and coercive field

C.-T. Chia, C.-C. Lee, P.-J. Chang, M.-L. Hu, and L. J. Hu

Appl. Phys. Lett. 86, 182901 (2005); http://dx.doi.org/10.1063/1.1922083 (3 pages) | Cited 7 times

Online Publication Date: 25 April 2005

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ZnO-doped lithium niobate crystals with a doped concentration of up to 8.3 mol % were grown by the Czochralski technique. The effects of incorporating Zn2+ ions into LiNbO3 crystals were studied by powder x-ray diffraction and taking polarization hysteresis loop measurements. When the Li-site vacancy model is adopted, the coercive fields obtained from the polarization reversal measurement depend strongly on the number of NbLi4−+4VLi−. However, the coercive field of Zn-doped ions into LiNbO3 is insensitive to the ZnLi2++VLi−. Experimental results indicate that four distinct substitutions of Zn−2 ions incorporated into ions into LiNbO3 crystals for doping concentrations from 0 to 8.3 mol %. The extent of Zn substitution is quantitatively determined for doping of below 7.5 mol %.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
61.72.up Other materials
77.80.Fm Switching phenomena
61.72.J- Point defects and defect clusters

Mechanism of structural transformation in bismuth titanate

Sudhanshu Mallick, Keith J. Bowman, and Alexander H. King

Appl. Phys. Lett. 86, 182902 (2005); http://dx.doi.org/10.1063/1.1919390 (2 pages) | Cited 5 times

Online Publication Date: 25 April 2005

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Sodium-doped bismuth titanate undergoes a transformation from Bi4Ti3O12 to Na0.5Bi4.5Ti4O15 on heating in air at temperatures exceeding 800 °C. This transformation proceeds through the intermediate Na0.5Bi8.5Ti7O27 structure which is an intergrowth phase of the two. High-resolution transmission electron microscopy was used to study this transformation. From the Moiré pattern that was obtained, the crystallographic orientation of the transformation front has been determined and a mechanism is proposed for this structural transformation.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Leakage conduction behavior in electron-beam-cured nanoporous silicate films

Po-Tsun Liu, T. M. Tsai, and T. C. Chang

Appl. Phys. Lett. 86, 182903 (2005); http://dx.doi.org/10.1063/1.1921329 (3 pages) | Cited 2 times

Online Publication Date: 25 April 2005

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This letter explores the application of electron-beam curing on nanoporous silicate films. The electrical conduction mechanism for the nanoporous silicate film cured by electron-beam radiation has been studied with metal-insulator-semiconductor capacitors. Electrical analyses over a varying temperature range from room temperature to 150 °C provide evidence for space-charge-limited conduction in the electron-beam-cured thin film, while Schottky-emission-type leaky behavior is seen in the counterpart typically cured by a thermal furnace. A physical model consistent with electrical analyses is also proposed to deduce the origin of conduction behavior in the nanoporous silicate thin film.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.05.Rm Porous materials; granular materials
84.32.Tt Capacitors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.80.Fe Electron and positron radiation effects
61.82.Fk Semiconductors
77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
73.61.-r Electrical properties of specific thin films

Microwave dielectric relaxation of the polycrystalline (Ba,Sr)TiO3 thin films

Taeho Moon, Byungjoo Lee, Tae-Gon Kim, Jeongmin Oh, Young Woo Noh, Sangwook Nam, and Byungwoo Park

Appl. Phys. Lett. 86, 182904 (2005); http://dx.doi.org/10.1063/1.1923760 (3 pages) | Cited 8 times

Online Publication Date: 27 April 2005

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The microwave dielectric properties of the (Ba,Sr)TiO3 thin films annealed at various oxygen pressures ranging from 5 to 500 mTorr were investigated over the frequency range 0.5–5 GHz using a circular-patch capacitor geometry. The dielectric constant (ε) followed Curie–von Schweidler relaxation in the microwave-frequency range, and the degree of relaxation corresponded qualitatively with the measured dielectric loss (tan δ). As the oxygen pressure varied, the dielectric loss had a maximum value of ∼ 0.03 at 100 mTorr, and its behavior was correlated with the Raman strength of the polar modes.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Gm Dielectric loss and relaxation
77.22.Ch Permittivity (dielectric function)
78.30.Hv Other nonmetallic inorganics
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.66.Nk Insulators

Low symmetry phase in (001) BiFeO3 epitaxial constrained thin films

Guangyong Xu, H. Hiraka, G. Shirane, Jiefang Li, Junling Wang, and D. Viehland

Appl. Phys. Lett. 86, 182905 (2005); http://dx.doi.org/10.1063/1.1924891 (3 pages) | Cited 64 times

Online Publication Date: 28 April 2005

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The lattice of (001)-oriented BiFeO3 epitaxial thin film has been identified by synchrotron x-ray diffraction. By choosing proper scattering zones containing the fixed (001) reflection, we have shown that low-symmetry phases similar to a MA phase exist in the thin film at room temperature. These results demonstrate a change in phase stability from rhombohedral in bulk single crystals, to a modified monoclinic structure in epitaxial thin films.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
75.50.Ee Antiferromagnetics
68.55.-a Thin film structure and morphology
61.66.Fn Inorganic compounds
77.80.-e Ferroelectricity and antiferroelectricity
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