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2 May 2005

Volume 86, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 86, 181101 (2005); http://dx.doi.org/10.1063/1.1920407 (3 pages)

Giacomo Scalari, Nicolas Hoyler, Marcella Giovannini, and Jérôme Faist
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Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p‐n junction dopant profiling

J. Yang, J. J. Kopanski, A. Postula, and M. Bialkowski

Appl. Phys. Lett. 86, 182101 (2005); http://dx.doi.org/10.1063/1.1922077 (3 pages) | Cited 3 times

Online Publication Date: 25 April 2005

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Controlled polishing procedures were used to produce both uniformly doped and p‐n junction silicon samples with different interface state densities but identical oxide thicknesses. Using these samples, the effects of interface states on scanning capacitance microscopy (SCM) measurements could be singled out. SCM measurements on the junction samples were performed with and without illumination from the atomic force microscopy laser. Both the interface charges and the illumination were seen to affect the SCM signal near p‐n junctions significantly. SCM p‐n junction dopant profiling can be achieved by avoiding or correctly modeling these two factors in the experiment and in the simulation.
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81.05.Cy Elemental semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.-r Electron states at surfaces and interfaces
61.72.S- Impurities in crystals
73.61.Cw Elemental semiconductors
72.40.+w Photoconduction and photovoltaic effects
68.37.Ps Atomic force microscopy (AFM)
81.65.Ps Polishing, grinding, surface finishing

Carbon nanotubes-semiconductor networks for organic electronics: The pickup stick transistor

X.-Z. Bo, C. Y. Lee, M. S. Strano, M. Goldfinger, C. Nuckolls, and Graciela B. Blanchet

Appl. Phys. Lett. 86, 182102 (2005); http://dx.doi.org/10.1063/1.1906316 (3 pages) | Cited 34 times

Online Publication Date: 25 April 2005

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We demonstrate an alternative path for achieving high transconductance organic transistors in spite of relatively large source to drain distances. The improvement of the electronic characteristic of such a scheme is equivalent to a 60-fold increase in mobility of the underlying organic semiconductor. The method is based on percolating networks, which we create from a dispersion of individual single-wall carbon nanotubes and narrow ropes within an organic semiconducting host. The majority of current paths between source and drain follow the metallic nanotubes but require a short, switchable semiconducting link to complete the circuit. With these nanotube-semiconducting composites we achieve effectively a 60× reduction in source to drain distance, which is equivalent to a 60-fold increase of the “effective” mobility of the starting semiconducting material with a minor decrease of the on/off current ratio. These field-induced percolating networks allow for the fabrication of high-transconductance transistors having relatively large source to drain distances that can be manufactured inexpensively by commercially available printing techniques.
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85.35.Kt Nanotube devices
85.30.Tv Field effect devices

High-field optically detected nuclear magnetic resonance in GaAs

M. Poggio and D. D. Awschalom

Appl. Phys. Lett. 86, 182103 (2005); http://dx.doi.org/10.1063/1.1923191 (3 pages) | Cited 5 times

Online Publication Date: 28 April 2005

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A method for high-field optically detected nuclear magnetic resonance (ODNMR) is developed sensitive to 108 nuclei. Nuclear spin transitions are induced using a radio frequency coil and detected through Faraday rotation spectroscopy. Unlike conventional ODNMR, which is limited to low fields and relies on the measurement of time-averaged luminescence polarization, this technique monitors nuclear polarization through time-resolved measurements of electron spin dynamics. Measurements in a (110) GaAs quantum well reveal math, math, and math resonances and their quadrupolar splittings while resolving changes in nuclear polarization of 0.02%.
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75.75.-c Magnetic properties of nanostructures
76.60.-k Nuclear magnetic resonance and relaxation

Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

X. Xu, R. Armitage, Satoko Shinkai, Katsutaka Sasaki, C. Kisielowski, and E. R. Weber

Appl. Phys. Lett. 86, 182104 (2005); http://dx.doi.org/10.1063/1.1923192 (3 pages) | Cited 3 times

Online Publication Date: 28 April 2005

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Single-crystal GaN thin films have been deposited epitaxially on a HfN-buffered Si(111) substrates by molecular-beam epitaxy. The microstructural and compositional characteristics of the films were studied in detail by transmission electron microscopy (TEMs). Cross-sectional TEM investigations have revealed the crystallographic orientation relationship in different GaN/HfN/Si layers. GaN film polarity is studied by conventional TEM and convergent beam electron diffraction simulations, and the results show that the GaN film has a Ga polarity with relatively high density of inversion domains. Based on our observations, growth mechanisms related to the structural properties are discussed.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
82.45.Mp Thin layers, films, monolayers, membranes
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