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2 May 2005

Volume 86, Issue 18, Articles (18xxxx)

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Appl. Phys. Lett. 86, 181101 (2005); http://dx.doi.org/10.1063/1.1920407 (3 pages)

Giacomo Scalari, Nicolas Hoyler, Marcella Giovannini, and Jérôme Faist
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Terahertz bound-to-continuum quantum-cascade lasers based on optical-phonon scattering extraction

Giacomo Scalari, Nicolas Hoyler, Marcella Giovannini, and Jérôme Faist

Appl. Phys. Lett. 86, 181101 (2005); http://dx.doi.org/10.1063/1.1920407 (3 pages) | Cited 23 times

Online Publication Date: 25 April 2005

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A design for a terahertz quantum-cascade laser emitting at λ ≃ 82 μm is presented. A bound-to-continuum active region is coupled to an optical phonon extraction stage in order to improve the population inversion at high temperatures. Device performances in a double-metal waveguide reach 116K in pulsed operation and 53K in continuous wave. A detailed characterization of two waveguide configurations is also presented together with a comparison with previous bound-to-continuum design.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

Microcavity single-photon-emitting diode

A. J. Bennett, D. C. Unitt, P. See, A. J. Shields, P. Atkinson, K. Cooper, and D. A. Ritchie

Appl. Phys. Lett. 86, 181102 (2005); http://dx.doi.org/10.1063/1.1921332 (3 pages) | Cited 42 times

Online Publication Date: 25 April 2005

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We show that a planar semiconductor cavity can be used to enhance by a factor of ten the efficiency with which photons are collected from an electrically driven single InAs/GaAs quantum dot. Under a fixed bias we observe that the photon statistics change when the injection current is modified. The observed bunching of photons from the biexciton state can be explained by the presence of charged states or dark states within the quantum dot with lifetimes greater than 4 ns. Single-photon emission from both the exciton and biexciton states is demonstrated under pulsed electrical injection.
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85.60.Jb Light-emitting devices
85.30.-z Semiconductor devices

Bandwidth-enhanced volume grating for dense wavelength-division multiplexer using a phase-compensation scheme

Lanlan Gu, Xiaonan Chen, Zhong Shi, Brie Howley, Jian Liu, and Ray T. Chen

Appl. Phys. Lett. 86, 181103 (2005); http://dx.doi.org/10.1063/1.1921333 (3 pages) | Cited 1 time

Online Publication Date: 25 April 2005

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A phase-compensation scheme is proposed and demonstrated to overcome the intrinsic tradeoff between the dispersion and the bandwidth of a volume grating. Its application to a volume grating-based dense wavelength-division multiplexing (DWDM) device is explored. A DWDM device is fabricated by using a 45°/82° configuration. To achieve phase compensation of the Bragg condition, a wavelength-dependent incident angle for a dispersion-enhanced holographic grating at 82° is generated through a prestaged volume hologram at 45°. The 3 dB dispersion bandwidth is increased five times by using such a device configuration. A 21-channel DWDM device centered at 1555 nm with 200 GHz spacing is demonstrated within its 3 dB bandwidth.
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42.40.Eq Holographic optical elements; holographic gratings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Stabilization of a chaotic laser and quenching

Dae-Sic Lee, Jung-Wan Ryu, Young-Jai Park, Won-Ho Kye, Michael S. Kurdoglyan, and Chil-Min Kim

Appl. Phys. Lett. 86, 181104 (2005); http://dx.doi.org/10.1063/1.1915542 (3 pages) | Cited 3 times

Online Publication Date: 26 April 2005

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We experimentally stabilize a chaotic output of a diode-laser-pumped Nd:yttrium–aluminum–garnet laser by using oscillation quenching. When the chaotic laser is mutually coupled with a Rössler oscillator that is implemented by an electronic circuit, both chaotic systems are stabilized to steady states. We experimentally study the route to the steady states as the coupling strength increases, and numerically confirm the route by coupling Lorenz and Rössler oscillators mutually.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.65.Sf Dynamics of nonlinear optical systems; optical instabilities, optical chaos and complexity, and optical spatio-temporal dynamics
42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers

Backward quasi-phase-matched second-harmonic generation in submicrometer periodically poled flux-grown KTiOPO4

C. Canalias, V. Pasiskevicius, M. Fokine, and F. Laurell

Appl. Phys. Lett. 86, 181105 (2005); http://dx.doi.org/10.1063/1.1921360 (3 pages) | Cited 16 times

Online Publication Date: 26 April 2005

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A 1 mm thick flux-grown KTiOPO4 sample was poled with a 720 nm domain period by employing deep-UV laser lithography, chemical patterning, and electric field poling. An atomic force microscope was used to characterize the periodic domain structure. The sample was used to demonstrate sixth and seventh order quasi-phase-matched backward second-harmonic generation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
81.16.Nd Micro- and nanolithography
81.16.Rf Micro- and nanoscale pattern formation

Near-surface modification of the third-order nonlinear susceptibility in thermally poled Infrasil™ glasses

Y. Quiquempois, A. Kudlinski, G. Martinelli, W. Margulis, and I. C. S. Carvalho

Appl. Phys. Lett. 86, 181106 (2005); http://dx.doi.org/10.1063/1.1921348 (3 pages) | Cited 8 times

Online Publication Date: 27 April 2005

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Both the second-order nonlinear distribution and the built-in electric field have been measured in poled Infrasil™ silica samples, leading to the determination of the third-order nonlinear susceptibility spatial distribution. A difference between the χ(2) and electric field profiles has been observed in the first micrometers near the surface in contact with the anode. This behavior could be attributed to a modification of the χ(3) susceptibility in the poled region.
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42.65.An Optical susceptibility, hyperpolarizability
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz

Characterization of extreme ultraviolet emission using the fourth harmonic of a Nd:YAG laser

Michiteru Yamaura, Shigeaki Uchida, Atsushi Sunahara, Yoshinori Shimada, Hiroaki Nishimura, Shinsuke Fujioka, Tomoharu Okuno, Kazuhisa Hashimoto, Keiji Nagai, Takayoshi Norimatsu, Katsunobu Nishihara, Noriaki Miyanga, Yasukazu Izawa, and Chiyoe Yamanaka

Appl. Phys. Lett. 86, 181107 (2005); http://dx.doi.org/10.1063/1.1915507 (3 pages) | Cited 20 times

Online Publication Date: 28 April 2005

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Characterization of an extreme ultraviolet (EUV) emission from laser-produced tin plasma was investigated for 266 and 1064 nm laser wavelengths. The EUV emission exhibits a laser-wavelength dependence in terms of angular distribution and structures of emission spectra. Angular distributions expressed in a form of I(θ)∝cosα θ became α = 1.3 and 0.5, respectively, for 266 and 1064 nm laser wavelength. It is found that spectra from 266 nm laser plasma show dips at around 13.5 nm that had been well replicated in computer simulations. Both angular distribution and spectral structure at 13.5 nm suggest the existence of an opaque plasma region in front of the EUV source plasma generated by 266 nm radiation.
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52.25.Tx Emission, absorption, and scattering of particles
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.65.-y Plasma simulation
42.55.Rz Doped-insulator lasers and other solid state lasers

Nanodot coupler with a surface plasmon polariton condenser for optical far/near-field conversion

Wataru Nomura, Motoichi Ohtsu, and Takashi Yatsui

Appl. Phys. Lett. 86, 181108 (2005); http://dx.doi.org/10.1063/1.1920419 (3 pages) | Cited 23 times

Online Publication Date: 28 April 2005

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To transmit an optical signal to a nanophotonic device, a nanodot coupler was fabricated from a linear array of closely spaced metallic nanoparticles. To increase the optical far- to near-field conversion efficiency for transmission, a surface plasmon polariton (SPP) condenser was also fabricated from hemispherical metallic nanoparticles so that it worked as a “phased array”. The SPP was focused with a spot size as small as 400 nm at λ = 785 nm. When the focused SPP was incident into the nanodot coupler, its transmission length through the nanodot coupler was confirmed to be 4.0 μm, which is three times longer than that of a metallic core waveguide owing to the efficient near-field coupling between the localized surface plasmon of neighboring nanoparticles. Furthermore, the transmission length through a zigzag-shaped nanodot coupler was as long as that through a linear one.
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42.82.Et Waveguides, couplers, and arrays
81.07.Ta Quantum dots
42.86.+b Optical workshop techniques
73.22.Lp Collective excitations
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)

Tuning and widening of stop bands of microstrip photonic band gap ring structures

Chul-Sik Kee, Mi-Young Jang, Sung-II Kim, Ikmo Park, and H. Lim

Appl. Phys. Lett. 86, 181109 (2005); http://dx.doi.org/10.1063/1.1906315 (3 pages) | Cited 3 times

Online Publication Date: 28 April 2005

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We show that the characteristics of microstrip ring structures exhibiting stop bands can be varied by mounting reactive components on the gap of the ring. The presence of capacitor (inductor) on the gap decreases (increases) the center frequency and the frequency range of the stop band. We also show that the stop band can be widened by modifying the structure of the ring. These properties can be useful in the applications to the compact microwave circuits, tunable filters, and microwave switches.
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42.70.Qs Photonic bandgap materials
42.79.Ci Filters, zone plates, and polarizers
84.40.-x Radiowave and microwave (including millimeter wave) technology

Time-resolved photoluminescence and Raman scattering of InAsSb/InP quantum dots

Saulius Marcinkevičius, Yueming Qiu, Rosa Leon, Jordi Ibáñez, Ramon Cuscó, and Lluís Artús

Appl. Phys. Lett. 86, 181110 (2005); http://dx.doi.org/10.1063/1.1900308 (3 pages) | Cited 4 times

Online Publication Date: 29 April 2005

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InAsSb quantum dots (QDs) grown by metalorganic vapor phase epitaxy on In0.53Ga0.47As/InP under different TMSb/AsH3 flow ratios have been characterized by means of continuous wave and time-resolved photoluminescence (PL) as well as Raman scattering. It was found that the flow ratio has a very strong influence on the QD composition, PL peak energies, and carrier recombination times. While the samples prepared using low TMSb/AsH3 flow ratios show a bimodal character with both InAs and InAsSb QDs present, in the structures grown at high flow ratios the InAsSb QDs dominate, showing strong photoluminescence intensity, fast carrier capture and slow recombination.
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78.30.Fs III-V and II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
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