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9 May 2005

Volume 86, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 86, 191102 (2005); http://dx.doi.org/10.1063/1.1922084 (3 pages)

Nir Dahan, Avi Niv, Gabriel Biener, Vladimir Kleiner, and Erez Hasman
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Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors

Sanjay Krishna, Darren Forman, Senthil Annamalai, Philip Dowd, Petros Varangis, Tom Tumolillo, Allen Gray, John Zilko, Kathy Sun, Mingguo Liu, Joe Campbell, and Daniel Carothers

Appl. Phys. Lett. 86, 193501 (2005); http://dx.doi.org/10.1063/1.1924887 (3 pages) | Cited 64 times

Online Publication Date: 2 May 2005

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We report the demonstration of a two-color infrared focal plane array based on a voltage-tunable quantum dots-in-well (DWELL) design. The active region consists of multiple layers of InAs quantum dots in an In0.15Ga0.85As quantum well. Spectral response measurements yielded a peak at 5.5 μm for lower biases and at 8–10 μm for higher biases. Using calibrated blackbody measurements, the midwavelength and long wavelength specific detectivity (D*) were estimated to be 7.1×1010 cm Hz1/2/W(Vb = 1.0 V) and 2.6×1010 cm Hz1/2/W(Vb = 2.6 V) at 78 K, respectively. This material was processed into a 320×256 array and integrated with an Indigo 9705 readout chip and thermal imaging was achieved at 80 K.
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42.79.Pw Imaging detectors and sensors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics

Jordi Suñé and Ernest Y. Wu

Appl. Phys. Lett. 86, 193502 (2005); http://dx.doi.org/10.1063/1.1925316 (3 pages)

Online Publication Date: 3 May 2005

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The transition between well-defined soft and hard breakdown modes to progressive breakdown in ultrathin silicon dioxide based dielectrics is studied by means of the statistics of residual time (the time from first breakdown to device failure). By stressing metal-oxide-semiconductor test capacitors with an oxide thickness of 2.2 nm under different gate bias and temperatures, it is demonstrated that low voltages and temperatures favor stable hard and soft breakdown modes, while high temperatures and voltages lead to a progressive breakdown controlled regime. Our results support the idea that no significant change of the involved physics occurs in the transition from one breakdown regime to the other. The continuous transition from one regime to the other permits one to clearly identify progressive breakdown as hard breakdown, which always requires a certain time to reach the device failure conditions.
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85.30.-z Semiconductor devices
84.32.Tt Capacitors

Effects of low-temperature postannealing on a n+-p shallow junction fabricated by plasma doping

Sungkweon Baek, Hyunsang Hwang, Kiju Im, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee, and Won-ju Cho

Appl. Phys. Lett. 86, 193503 (2005); http://dx.doi.org/10.1063/1.1923758 (3 pages)

Online Publication Date: 3 May 2005

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A low-temperature activation annealing process following plasma doping (PLAD) was investigated. A dramatic reduction of sheet resistance Rs occurred in the postactivation annealing temperature range of 400 °C–480 °C after PLAD. The Rs of 30 Ω/sq. and the junction depth Xj of 30 nm was obtained without the additional diffusion of a dopant from the postactivation annealing in the fabricated junction. The electrical characteristics of a n+-p junction diode fabricated by PLAD were also improved after low-temperature postannealing.
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85.30.Kk Junction diodes
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.up Other materials
52.77.Dq Plasma-based ion implantation and deposition
61.72.Cc Kinetics of defect formation and annealing
66.30.J- Diffusion of impurities

Leakage currents of SiO2 films grown on CoSi2 lines and disks

S. B. Herner and C. J. Petti

Appl. Phys. Lett. 86, 193504 (2005); http://dx.doi.org/10.1063/1.1923751 (3 pages)

Online Publication Date: 4 May 2005

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Silicon dioxide films were grown by low-temperature anneal in O2 on substrates of CoSi2 lines or disks. The leakage current through SiO2 films grown on CoSi2 lines have a strong dependence on the O2 anneal temperature, while those grown on CoSi2 disks have a weak dependence on anneal temperature. This difference is due to the shape of the oxide grown on the CoSi2. Oxide films were found to grow in a convex shape on CoSi2 disks, being much thicker in the middle of the disk than on the edge. Oxide films grown on CoSi2 lines had relatively uniform thickness across the width of the line.
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77.55.-g Dielectric thin films
73.61.Ng Insulators
81.40.Gh Other heat and thermomechanical treatments

Operational and environmental stability of pentacene thin-film transistors

C. R. Kagan, A. Afzali, and T. O. Graham

Appl. Phys. Lett. 86, 193505 (2005); http://dx.doi.org/10.1063/1.1924890 (3 pages) | Cited 54 times

Online Publication Date: 4 May 2005

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We report the effects of repeated stressing and environmental exposure on the operational stability of pentacene thin-film transistors (TFTs). Pentacene TFT channels were deposited by thermal evaporation and by spin coating and thermally converting soluble precursors. For a given dielectric thickness and applied voltage, pentacene TFTs with shorter channel lengths and therefore higher current densities have the largest decrease in field-effect mobility, on-current, and subthreshold slope and the largest threshold voltage shift with device cycling. Devices measured in ambient nitrogen show little degradation and devices fabricated on thinner dielectrics, operated at lower voltages with similarly high current densities in air, show reduced degradation. These results are consistent with degradation by thermal oxidation and suggest that reducing the operational power (by device scaling) and limiting channel exposure to ambient air improves device stability.
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85.30.Tv Field effect devices
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Visible electroluminescence from silicon nanocrystals embedded in amorphous silicon nitride matrix

Liang-Yih Chen, Wen-Hua Chen, and Franklin Chau-Nan Hong

Appl. Phys. Lett. 86, 193506 (2005); http://dx.doi.org/10.1063/1.1925311 (3 pages) | Cited 43 times

Online Publication Date: 5 May 2005

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Visible electroluminescence from silicon nanocrystals (Si-NCs) embedded in amorphous silicon nitride (a‐SiNx) films has been observed. The Si‐NC/a‐SiNx films were deposited by evaporating silicon from electron gun into the inductively coupled plasma of nitrogen. The density of Si-NCs in the a‐SiNx matrix was around 1012 cm−2. Strong room temperature photoluminescence was observed in 2.8 and 3.0 eV, different from literature values. The electroluminescence (EL) devices were fabricated with Si‐NCs/a‐SiNx film as the active layer using the Al or Ca/Ag cathode and the indium tin oxide anode. Through tunneling, the electrons and holes were respectively injected from the cathode and anode into Si-NCs and confined within Si-NCs for light emission by the high band gap a‐SiNx matrix. For the device with Ca/Ag cathode, the turn-on voltage was as low as 10 V and the EL efficiency was about 1.6×10−1 Cd/A. The EL spectra consisted of two broad peaks centered around 2.5 and 2.8 eV. Our results demonstrate that Si‐NCs/a‐SiNx nanocomposite films have potentials to be fabricated into electroluminescence devices using the low work function cathode.
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78.66.Li Other semiconductors
78.60.Fi Electroluminescence
78.55.Hx Other solid inorganic materials
73.61.Le Other inorganic semiconductors
73.40.Gk Tunneling
78.40.Fy Semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions

Electromechanical strain in conjugated polymer diodes under forward and reverse bias

Gilles Dennler, Niyazi Serdar Sariciftci, Reinhard Schwödiauer, Siegfried Bauer, and Howard Reiss

Appl. Phys. Lett. 86, 193507 (2005); http://dx.doi.org/10.1063/1.1925779 (3 pages) | Cited 4 times

Online Publication Date: 5 May 2005

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Organic polymeric semiconductor diodes based on poly(paraphenylene vinylene) exhibit electromechanical strain under reverse and forward bias operation. Under reverse bias, the strain in the organic diode is created by Maxwell forces (“electrostrictive” actuation). Under forward bias, the large electrical current results in Joule heating and thus in a thermally induced electromechanical strain. These electromechanical effects might be used for transducer applications of organic electronic materials.
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85.60.Jb Light-emitting devices
77.65.-j Piezoelectricity and electromechanical effects

Feasibility of static induction transistor with organic semiconductors

Serkan Zorba and Yongli Gao

Appl. Phys. Lett. 86, 193508 (2005); http://dx.doi.org/10.1063/1.1906306 (3 pages) | Cited 19 times

Online Publication Date: 5 May 2005

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We have fabricated and studied static induction transistors (SITs) with various organic semiconductor materials, such as pentacene, perylene, tris(quinoline-8-hydroxylate)aluminum (Alq), and N,N′-di(4-methylphenyl)-N,N′-diphenylbenzidine (TPD), used as the active element. The former two resulted in unsuccessful operation due to a short caused by pinholes formed in the films. Modification of the deposition rates did not change the outcome. The latter two provided successful operation. No fatal pinholes were observed in the thin films of the latter two. It is thus shown that the morphology has crucial effect in the operation of SITs. A transition from linear to nonlinear behavior has been observed in the drain-source I–V characteristics of Alq and TPD.
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85.30.Tv Field effect devices

Extreme ultraviolet single-crystal diamond detectors by chemical vapor deposition

A. Balducci, Marco Marinelli, E. Milani, M. E. Morgada, A. Tucciarone, G. Verona-Rinati, M. Angelone, and M. Pillon

Appl. Phys. Lett. 86, 193509 (2005); http://dx.doi.org/10.1063/1.1927709 (3 pages) | Cited 37 times

Online Publication Date: 6 May 2005

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High-quality single-crystal diamond films, homoepitaxially grown by microwave chemical vapor deposition, have been used to produce diamond-based photodetectors. Such devices were tested over a very wide spectral range, from the extreme ultraviolet (UV) (20 nm) up to the near IR region (2400 nm). An optical parametric oscillator tunable laser was used to investigate the 210–2400 nm spectral range in pulse mode. In this region, the spectral response shows a UV to visible contrast of about 6 orders of magnitude. A time response shorter than 5 ns, i.e., the laser pulse duration, was observed. By integrating the pulse shape, a minor slow component was evidenced, which can be explained in terms of trapping–detrapping effects. Extreme UV gas sources and a toroidal grating vacuum monochromator were used to measure the device response down to 20 nm in continuous mode. In particular, the extreme UV He spectrum was measured and the He II m, 30.4 nmand He I 58.4 nm emission lines were clearly detected. The measured time response of 0.2 s is totally due to the instrumental readout time constants. In both experimental setups an extremely good stability and reproducibility of the device response were obtained, whereas no persistent photoconductivity nor undesirable pumping effects were observed.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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