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9 May 2005

Volume 86, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 86, 191102 (2005); http://dx.doi.org/10.1063/1.1922084 (3 pages)

Nir Dahan, Avi Niv, Gabriel Biener, Vladimir Kleiner, and Erez Hasman
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Broadband InGaAs tapered diode laser sources for optical coherence radar and coherence tomography

Oliver Casel, Harry Fuchs, Marc A. Tremont, Dirk Woll, and Richard Wallenstein

Appl. Phys. Lett. 86, 191101 (2005); http://dx.doi.org/10.1063/1.1925313 (3 pages) | Cited 1 time

Online Publication Date: 2 May 2005

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This letter reports on broadband laser sources based on InGaAs tapered diode laser amplifiers with external optical feedback. The generated 920 nm radiation with a bandwidth of up to 20 nm and a power of a few hundred milliwatts is emitted in an almost diffraction limited beam. Spectral filtering and subsequent amplification in a second tapered amplifier provides radiation with spectral widths in the range of 20 to 40 nm and optical output powers of up to 2.5 W.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.79.Qx Range finders, remote sensing devices; laser Doppler velocimeters, SAR, and LIDAR
87.63.L- Visual imaging
81.70.Fy Nondestructive testing: optical methods

Space-variant polarization manipulation of a thermal emission by a SiO2 subwavelength grating supporting surface phonon-polaritons

Nir Dahan, Avi Niv, Gabriel Biener, Vladimir Kleiner, and Erez Hasman

Appl. Phys. Lett. 86, 191102 (2005); http://dx.doi.org/10.1063/1.1922084 (3 pages) | Cited 16 times

Online Publication Date: 2 May 2005

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Space-variant polarization manipulation of enhanced nondirectional thermal emission in a narrow spectral peak is presented. The emission is attributed to surface phonon-polariton excitation from space-variant subwavelength SiO2 gratings. Polarization manipulation was obtained by discretely controlling the local orientation of the grating. We experimentally demonstrated thermal emission in an axially symmetric polarization distribution. Theoretical calculations based on rigorous coupled-wave analysis are presented along with experimental results.
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42.79.Dj Gratings
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
71.36.+c Polaritons (including photon-phonon and photon-magnon interactions)
68.35.Ja Surface and interface dynamics and vibrations

High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition

W. Zhang, H. Lim, M. Taguchi, S. Tsao, B. Movaghar, and M. Razeghi

Appl. Phys. Lett. 86, 191103 (2005); http://dx.doi.org/10.1063/1.1923176 (3 pages) | Cited 11 times

Online Publication Date: 2 May 2005

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We report a high-detectivity InAs quantum-dot infrared photodetector. The InAs quantum dots were grown by self-assembly on InP substrates via low-pressure metal–organic chemical–vapor deposition. Highly uniform quantum dots with a density of 4×1010 cm2 were grown on a GaAs/InP matrix. Photoresponse was observed at temperatures up to 160 K with a peak of 6.4 μm and cutoff of 6.6 μm. Very low dark currents and noise currents were obtained by inserting Al0.48In0.52As current blocking layers. The background-limited performance temperature was 100 K. A detectivity of 1.0×1010 cm Hz1/2/W was obtained at 77 K with a bias of −1.1 V.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.07.Ta Quantum dots
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Experimental characterization of the reflectance of 60° waveguide bends in photonic crystal waveguides

M. H. Shih, Woo Jun Kim, Wan Kuang, J. R. Cao, Sang-Jun Choi, John D. O’Brien, and P. Daniel Dapkus

Appl. Phys. Lett. 86, 191104 (2005); http://dx.doi.org/10.1063/1.1923169 (3 pages) | Cited 3 times

Online Publication Date: 3 May 2005

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Photonic crystal waveguides with two 60° bends were fabricated in an InGaAsP/InP suspended membrane geometry. The transmission spectrum was measured and the reflectance of the 60° bend was evaluated from Fabry–Perot oscillations using Fourier analysis. It is shown that the reflectance agrees well with the results of a finite element method simulation.
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42.70.Qs Photonic bandgap materials
42.55.Tv Photonic crystal lasers and coherent effects
81.16.Mk Laser-assisted deposition

Three-dimensional optical memory using photoluminescence change in Sm-doped sodium borate glass

Jinhyong Lim, Myeongkyu Lee, and Eunkyoung Kim

Appl. Phys. Lett. 86, 191105 (2005); http://dx.doi.org/10.1063/1.1926402 (3 pages) | Cited 14 times

Online Publication Date: 3 May 2005

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The feasibility of three-dimensional (3D) optical memory has been demonstrated by utilizing the photoluminescence (PL) spectrum change in a Sm-doped fluoride glass [ K. Miura, J. Qiu, S. Fujiwara, S. Sakasuchi, and K. Hirao, Appl. Phys. Lett. 80 2263 (2002) ]. We here report on a femtosecond laser-induced PL change in a Sm-doped sodium borate glass that is easier to synthesize and its potential application to 3D memory. Irradiation with a femtosecond pulsed laser (800 nm, 1 kHz, 100 fs) induced a PL peak near 682 nm, resulting from the photoreduction of the Sm ions. A multilayer pattern (bit size = 1 μm,layer separation = 8 μm) formed by femtosecond laser irradiation was read out by a reflection-type fluorescent confocal microscope, which detected the emission at 682 nm as a signal. High-contrast pattern images were obtained without crosstalk.
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42.79.Vb Optical storage systems, optical disks
42.70.Ce Glasses, quartz
78.55.Hx Other solid inorganic materials
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

P. Bhattacharya, X. H. Su, S. Chakrabarti, G. Ariyawansa, and A. G. U. Perera

Appl. Phys. Lett. 86, 191106 (2005); http://dx.doi.org/10.1063/1.1923766 (3 pages) | Cited 77 times

Online Publication Date: 3 May 2005

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We report high-temperature (240–300 K) operation of a tunneling quantum-dot infrared photodetector. The device displays two-color characteristics with photoresponse peaks at ∼ 6 μm and 17 μm. The extremely low dark current density of 1.55 A/cm2 at 300 K for 1 V bias is made possible by the tunnel filter. For the 17 μm absorption, the measured peak responsivity is 0.16 A/W (300 K) for a bias of 2 V and the specific detectivity D* is 1.5×107 cm Hz1/2/W (280 K) for a bias of 1 V. Excellent performance characteristics are also measured for the 6 μm photoresponse.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.30.-z Semiconductor devices

Optical add-drop multiplexers based on Si-wire waveguides

Hirohito Yamada, Tao Chu, Satomi Ishida, and Yasuhiko Arakawa

Appl. Phys. Lett. 86, 191107 (2005); http://dx.doi.org/10.1063/1.1924884 (3 pages) | Cited 9 times

Online Publication Date: 3 May 2005

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Ultrasmall optical add-drop multiplexers (OADMs) with Si-wire waveguides were demonstrated. Bragg grating reflectors based on Si-wire waveguides were developed and used as the wavelength-selective mechanism in the OADMs. The dropping wavelength bandwidth of the OADMs was less than 0.7 nm, and the dropping wavelengths could be controlled precisely by adjusting the grating period.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.79.Gn Optical waveguides and couplers
42.79.Dj Gratings
42.79.Bh Lenses, prisms and mirrors

Calculation of the linewidth broadening in vertical-cavity surface-emitting lasers due to temperature fluctuations

Christian Lauer and Markus-Christian Amann

Appl. Phys. Lett. 86, 191108 (2005); http://dx.doi.org/10.1063/1.1924868 (3 pages) | Cited 3 times

Online Publication Date: 3 May 2005

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We investigate the broadening of the spectral linewidth of vertical-cavity surface-emitting lasers due to the temperature fluctuations occuring in the small resonator volume of these lasers. The present analysis is restricted to the direct impact of temperature changes on the emission wavelength via the temperature dependent refractive index of the semiconductor materials (thermorefractive effect). Our results indicate a significant contribution to the laser linewidth of up to ≈ 10 MHz for small devices. This broadening adds to the Schawlow–Townes–Henry linewidth and thus defines a minimal achievable spectral linewidth.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Observation of ultrahigh quality factor in a semiconductor microcavity

D. Sanvitto, A. Daraei, A. Tahraoui, M. Hopkinson, P. W. Fry, D. M. Whittaker, and M. S. Skolnick

Appl. Phys. Lett. 86, 191109 (2005); http://dx.doi.org/10.1063/1.1925774 (3 pages) | Cited 21 times

Online Publication Date: 4 May 2005

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Observation of a very high-quality factor (Q) of ∼ 30,000 is reported for a planar semiconductor microcavity grown by molecular-beam epitaxy using in situ optical monitoring. The very high Qs are measured in pillars of 5–10 μm diameter, and are approximately a factor of 3 higher than measured in planar structures before etching. The higher values in the pillars are ascribed to the elimination of the effects of in-plane dispersion, diffraction, and lateral inhomogeneities, thus allowing the intrinsic Q of the planar structure to be observed. Spectrally resolved mode mapping is reported, accounting qualitatively for the decrease of Q with increasing mode number in the pillars.
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85.30.De Semiconductor-device characterization, design, and modeling
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.Cf Surface cleaning, etching, patterning

Observation of soliton ridge states for the self-imprinting of fiber-slab couplers

Eugenio DelRe, Angelo D’Ercole, Elia Palange, and Aharon J. Agranat

Appl. Phys. Lett. 86, 191110 (2005); http://dx.doi.org/10.1063/1.1926401 (3 pages) | Cited 4 times

Online Publication Date: 4 May 2005

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We investigate experimentally the energy exchange patterns and consequent propagation dynamics of an extended hybrid-dimensional interaction between a one-dimensional and a two-dimensional spatial soliton in a biased photorefractive crystal. Results show that conditions can be found in which the coupling manifests propagation invariant features. The mechanism hinges on mutual distortion through spatially nonlocal components of response, as opposed to standard wave overlap, which would lead to a diffusion of the needle into the slab mode. These nonlocal-nonlinearity-driven ridge modes represent the instrument for writing fiber-slab couplers, the key to attaining soliton-based wavelength selectivity with electroactivated features.
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42.65.Tg Optical solitons; nonlinear guided waves
42.81.Qb Fiber waveguides, couplers, and arrays
42.70.Gi Light-sensitive materials
42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials

Potential white-light long-lasting phosphor: Dy3+-doped aluminate

Bo Liu, Chaoshu Shi, and Zeming Qi

Appl. Phys. Lett. 86, 191111 (2005); http://dx.doi.org/10.1063/1.1925778 (3 pages) | Cited 34 times

Online Publication Date: 5 May 2005

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The white-light long-lasting phosphor CaAl2O4:Dy3+ was prepared and investigated. The white-light afterglow spectra under the irradiation of 254 or 365 nm are comprised of the blue light emission and the yellow light emission, originating from the transitions of math→math, math→math in the 4f9 configuration of Dy3+. The afterglow can last 32 min for the best sample with Dy-doped concentration of 2 at. %. The decay curve and the thermoluminescence curve show to be a second-order process. Thermoluminescence curves exhibit a complicated structure in the range of 230–450 K with the peaks at 244, 280, 310, and 346 K. The two thermoluminescence bands peaking above room temperature have corresponding traps with the depths of 0.54 and 0.61 eV, which are responsible for the afterglow emission at room temperature. This work provides a promising approach for the development of white-light long-lasting phosphor.
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78.60.Kn Thermoluminescence
78.40.Ha Other nonmetallic inorganics
61.72.S- Impurities in crystals
71.55.Ht Other nonmetals
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