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9 May 2005

Volume 86, Issue 19, Articles (19xxxx)

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Appl. Phys. Lett. 86, 191102 (2005); http://dx.doi.org/10.1063/1.1922084 (3 pages)

Nir Dahan, Avi Niv, Gabriel Biener, Vladimir Kleiner, and Erez Hasman
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Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

M. Cabié, A. Ponchet, A. Rocher, L. Durand, and A. Altibelli

Appl. Phys. Lett. 86, 191901 (2005); http://dx.doi.org/10.1063/1.1900306 (3 pages)

Online Publication Date: 2 May 2005

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The epitaxial stress of a Ga0.8In0.2As thin layer deposited on a GaAs substrate has been measured by the curvature method adapted to transmission electron microscopy. It is shown that even if the geometrical characteristics of the specimens thinned to be observed by transmission electron microscopy are very different from the ones of a thick sample, the conditions of validity of the model can still be verified. Finite element calculations have been performed to determine the geometry of the specimen answering to these conditions. Once these conditions are satisfied, the stress measured on a Ga0.8In0.2As layer is −1.30±0.13 GPa.
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81.05.Ea III-V semiconductors
68.60.Bs Mechanical and acoustical properties
62.40.+i Anelasticity, internal friction, stress relaxation, and mechanical resonances
68.55.-a Thin film structure and morphology
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.D- Elasticity
68.37.Lp Transmission electron microscopy (TEM)

Blue-purplish InGaN quantum wells with shallow depth of exciton localization

Tetsuya Akasaka, Hideki Gotoh, Hedetoshi Nakano, and Toshiki Makimoto

Appl. Phys. Lett. 86, 191902 (2005); http://dx.doi.org/10.1063/1.1925314 (3 pages) | Cited 9 times

Online Publication Date: 2 May 2005

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Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs.
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73.21.Fg Quantum wells
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
78.67.De Quantum wells

Accurate determination of atomic structure of multiwalled carbon nanotubes by nondestructive nanobeam electron diffraction

Zejian Liu, Qi Zhang, and Lu-Chang Qin

Appl. Phys. Lett. 86, 191903 (2005); http://dx.doi.org/10.1063/1.1923170 (3 pages) | Cited 17 times

Online Publication Date: 2 May 2005

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We report a method that allows direct, systematic, and accurate determination of the atomic structure of multiwalled carbon nanotubes by analyzing the scattering intensities on the nonequatorial layer lines in the electron diffraction pattern. Complete structure determination of a quadruple-walled carbon nanotube is described as an example, and it was found that the intertubular distance varied from 0.36 nm to 0.5 nm with a mean value of 0.42 nm.
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73.22.Dj Single particle states
61.05.jm Convergent-beam electron diffraction, selected-area electron diffraction, nanodiffraction

In situ investigation of growth and thermal stability of ultrathin Si layers on the HfO2/Si (100) high-κ dielectric system

Yu. Yu. Lebedinskii, A. Zenkevich, E. P. Gusev, and M. Gribelyuk

Appl. Phys. Lett. 86, 191904 (2005); http://dx.doi.org/10.1063/1.1923158 (3 pages) | Cited 10 times

Online Publication Date: 2 May 2005

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We report on growth behavior and thermal stability of ultrathin (0.5–12 nm) Si layers grown on HfO2 (3 nm)/Si (100) by pulsed laser deposition (PLD) as investigated by in situ x-ray photoelectron spectroscopy and low-energy ion scattering spectroscopy. Layer-by-layer growth of ultrathin Si overlayer was observed during room-temperature deposition, while an island-like growth behavior dominated at T ≥ 900 K. Vacuum annealing of the Si(3.5 nm)/HfO2 (3 nm)/Si (100) structure resulted in Si crystallization and coarsening. The process was accompanied by hafnium oxide reduction at the surface causing HfO2 layer decomposition and hafnium silicide formation. These interface reactions depended on the thickness of the Si cap layer—the thicker (12 nm) Si layer on HfO2 (40 nm)/Si (100) appeared to be stable at least up to T = 1200 K. An ultrathin (0.3 nm) Al2O3 layer PLD deposited between HfO2 and the Si overlayer also effectively inhibited the reactions up to T = 1200 K.
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81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth
68.60.Dv Thermal stability; thermal effects
68.35.Ct Interface structure and roughness
77.22.Ch Permittivity (dielectric function)
81.15.Fg Pulsed laser ablation deposition
61.72.Cc Kinetics of defect formation and annealing
79.60.Bm Clean metal, semiconductor, and insulator surfaces
64.70.K- Solid-solid transitions
64.75.-g Phase equilibria
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Thermodynamic stability of Ga2O3(Gd2O3)/GaAs interface

Y. L. Huang, P. Chang, Z. K. Yang, Y. J. Lee, H. Y. Lee, H. J. Liu, J. Kwo, J. P. Mannaerts, and M. Hong

Appl. Phys. Lett. 86, 191905 (2005); http://dx.doi.org/10.1063/1.1923172 (3 pages) | Cited 27 times

Online Publication Date: 2 May 2005

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Ga2O3(Gd2O3)/GaAs heterostructures have been annealed up to ∼ 780 °C. Studies using x-ray reflectivity and high-resolution transmission electron microscopy have shown that the samples annealed under ultrahigh vacuum have maintained smooth and abrupt interfaces with the interfacial roughness being less than 0.2 nm. The oxide remains amorphous, an important parameter for device consideration. Current–voltage and capacitance–voltage measurements have shown low leakage currents (10−8–10−9 A/cm2), a high dielectric constant of 15, and a low interfacial density of states (Dit) between gate dielectrics and GaAs. The attainment of a smooth interface between the gate dielectric and GaAs, even after high temperature annealing for activating implanted dopant, is a must to ensure the low (Dit) and to maintain a high carrier mobility in the channel of the metal–oxide–semiconductor field-effect transistor.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Fr Low-field transport and mobility; piezoresistance
77.55.-g Dielectric thin films
73.20.At Surface states, band structure, electron density of states
68.35.Ct Interface structure and roughness
68.37.Lp Transmission electron microscopy (TEM)
77.22.Ch Permittivity (dielectric function)
65.40.G- Other thermodynamical quantities
61.72.Cc Kinetics of defect formation and annealing
61.43.Er Other amorphous solids

Strategy for pinpointing the best glass-forming alloys

D. Ma, H. Tan, D. Wang, Y. Li, and E. Ma

Appl. Phys. Lett. 86, 191906 (2005); http://dx.doi.org/10.1063/1.1922570 (3 pages) | Cited 35 times

Online Publication Date: 3 May 2005

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We present a model for the glass forming ability (GFA), based on phase selection of the glass over all the competing crystalline phases. Our analysis indicates that the best glass-forming zone can be either symmetric, or asymmetric, about the eutectic composition. Based on the model predictions we outline a microstructure-based strategy to pinpoint the off-eutectic composition with the optimum GFA. The practical implementation and significance of the strategy is demonstrated by discovering bulk metallic glasses in Zr–Cu and Zr–Cu–Al systems.
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81.30.Bx Phase diagrams of metals, alloys, and oxides
61.43.Fs Glasses
61.43.Dq Amorphous semiconductors, metals, and alloys

Optical properties of poly(di-n-hexylsilane)–zirconia hybrid thin films: suppression of thermochromism and large thermo-optic coefficients

Masahiro Marusaki, Hiroyoshi Naito, Yukihito Matsuura, and Kimihiro Matsukawa

Appl. Phys. Lett. 86, 191907 (2005); http://dx.doi.org/10.1063/1.1923196 (3 pages) | Cited 5 times

Online Publication Date: 3 May 2005

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Optical properties of hybrid thin films, poly(di-n-hexylsilane) (PDHS) dispersed in a zirconia matrix prepared by a sol–gel method, have been studied by means of optical absorption, photoluminescence and ellipsometry measurements. It is found that thermochromism of PDHS is suppressed in the PDHS–zirconia hybrid thin films, and that the refractive index of the hybrid, n, is continuously decreased with increasing temperature, T. The thermo-optic (TO) coefficient of the hybrids, dn/dT, is found to be −4×10−4 °C−1 and thus such a high value of dn/dT enables us to apply the hybrids to optical devices such as TO switches and optical deflectors.
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42.70.-a Optical materials
78.55.-m Photoluminescence, properties and materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Reduction of dislocations in GaN epilayers using templated three-dimensional coherent nanoislands

K. Jeganathan, M. Shimizu, and H. Okumura

Appl. Phys. Lett. 86, 191908 (2005); http://dx.doi.org/10.1063/1.1926419 (3 pages) | Cited 4 times

Online Publication Date: 3 May 2005

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Low-dislocation-density GaN layers have been grown on 6H–SiC(0001) substrates by molecular-beam epitaxy using high-density ( ∼ 4×1011 cm−2) self-assembled Stranski–Krastanov GaN nanoislands buffer. The density of dislocations determined from hot-wet chemical etching and atomic force microscopy show that the insertion of coherent nanoislands as a buffer reduces the defect migration from the interface to the GaN epitaxial layers. The dislocation density is dramatically dropped to ∼ 107 cm−2 in GaN layers grown on coherent nanoislands as compared to ∼ 109 cm−2 in the typical GaN layers grown on the AIN buffer.
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81.05.Ea III-V semiconductors
61.72.Lk Linear defects: dislocations, disclinations
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.65.Cf Surface cleaning, etching, patterning
68.55.A- Nucleation and growth
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.37.Ps Atomic force microscopy (AFM)
68.35.B- Structure of clean surfaces (and surface reconstruction)
66.30.Lw Diffusion of other defects

Dynamic polarization filtering in anisotropically strained M-plane GaN films

K. Omae, T. Flissikowski, P. Misra, O. Brandt, H. T. Grahn, K. Kojima, and Y. Kawakami

Appl. Phys. Lett. 86, 191909 (2005); http://dx.doi.org/10.1063/1.1927271 (3 pages) | Cited 9 times

Online Publication Date: 3 May 2005

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The dynamic optical polarization filtering for anisotropically strained M-plane GaN films on LiAlO2 is investigated by pump and probe spectroscopy. Due to a very large polarization anisotropy in the absorption coefficient, these films exhibit an intrinsic polarization filtering, which appears as a rotation of the polarization vector after transmission of linearly polarized light through the film. For dynamic filtering, the polarization rotation is controlled by the pump, since the photoexcited carriers remove the intrinsic linear dichroism by selective bleaching of the anisotropic absorption. The dynamic behavior of the polarization rotation is mainly determined by the redistribution of holes between the two uppermost valence bands and by the recombination time. The latter is comparable to the measured decay time of the dynamic rotation of about 15 ps. For M-plane GaN films, the maximum dynamic rotation reaches 35°, while the maximum static polarization rotation is about 40°.
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78.66.Fd III-V semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Fm Birefringence
78.47.-p Spectroscopy of solid state dynamics
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology

Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification

Rong Chen, Hyoungsub Kim, Paul C. McIntyre, David W. Porter, and Stacey F. Bent

Appl. Phys. Lett. 86, 191910 (2005); http://dx.doi.org/10.1063/1.1922076 (3 pages) | Cited 20 times

Online Publication Date: 4 May 2005

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A chemically selective process to achieve high-resolution area-selective atomic layer deposition (ALD) of HfO2 is introduced in this letter. By utilizing the intrinsically selective absorption behavior of self-assembled monolayers (SAMs) on different surfaces, SAMs are used to deactivate the oxide regions on a patterned silicon substrate while leaving areas of hydride-terminated silicon intact. Subsequently, a HfO2 thin film is selectively deposited onto the hydride-terminated silicon regions by ALD. The result by several analytical methods indicates that the process presented here has excellent area selectivity and forms HfO2 patterns with high spatial resolution.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.43.Mn Adsorption kinetics

Nature of room-temperature photoluminescence in ZnO

W. Shan, W. Walukiewicz, J. W. Ager, K. M. Yu, H. B. Yuan, H. P. Xin, G. Cantwell, and J. J. Song

Appl. Phys. Lett. 86, 191911 (2005); http://dx.doi.org/10.1063/1.1923757 (3 pages) | Cited 17 times

Online Publication Date: 4 May 2005

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The temperature dependence of the photoluminescence (PL) transitions associated with various excitons and their phonon replicas in high-purity bulk ZnO has been studied at temperatures from 12 K to above room temperature (320 K). Several strong PL emission lines associated with longitudinal optical (LO) phonon replicas of free and bound excitons are clearly observed. The room-temperature PL spectrum is dominated by the phonon replicas of the free exciton transition with the maximum at the first LO phonon replica. The results explain the discrepancy between the transition energy of free exciton determined by reflection measurement and the peak position obtained by the PL measurement.
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78.55.Et II-VI semiconductors
63.20.kk Phonon interactions with other quasiparticles

Versatile buffer layer architectures based on Ge1−xSnx alloys

R. Roucka, J. Tolle, C. Cook, A. V. G. Chizmeshya, J. Kouvetakis, V. D’Costa, J. Menendez, Zhihao D. Chen, and S. Zollner

Appl. Phys. Lett. 86, 191912 (2005); http://dx.doi.org/10.1063/1.1922078 (3 pages) | Cited 22 times

Online Publication Date: 5 May 2005

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We describe methodologies for integration of compound semiconductors with Si via buffer layers and templates based on the GeSn system. These layers exhibit atomically flat surface morphologies, low defect densities, tunable thermal expansion coefficients, and unique ductile properties, which enable them to readily absorb differential stresses produced by mismatched overlayers. They also provide a continuous selection of lattice parameters higher than that of Ge, which allows lattice matching with technologically useful III-V compounds. Using this approach we have demonstrated growth of GaAs, GeSiSn, and pure Ge layers at low temperatures on Si(100). These materials display extremely high-quality structural, morphological, and optical properties opening the possibility of versatile integration schemes directly on silicon.
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81.05.Ea III-V semiconductors
81.05.Cy Elemental semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
61.66.Fn Inorganic compounds
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.47.Fg Semiconductor surfaces
65.40.De Thermal expansion; thermomechanical effects

Epitaxial growth of NaxCoO2 thin films by pulsed-laser deposition

Y. Krockenberger, I. Fritsch, G. Cristiani, A. Matveev, L. Alff, H.-U. Habermeier, and B. Keimer

Appl. Phys. Lett. 86, 191913 (2005); http://dx.doi.org/10.1063/1.1927272 (3 pages) | Cited 7 times

Online Publication Date: 5 May 2005

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Single-phase thin films of NaxCoO2 have been grown epitaxially by pulsed-laser deposition technique. The growth conditions were studied based on the log pO2−1/T phase diagram of Co–O2 using different types of substrate materials. For Na0.58CoO2, metallic behavior is found down to 4.2 K.
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68.55.A- Nucleation and growth
81.15.Fg Pulsed laser ablation deposition
74.78.-w Superconducting films and low-dimensional structures
74.25.Dw Superconductivity phase diagrams
74.25.F- Transport properties

Formation of epitaxial β-Sn islands at the interface of SiO2/Si layers implanted with Sn ions

J. M. J. Lopes, F. C. Zawislak, P. F. P. Fichtner, R. M. Papaléo, F. C. Lovey, A. M. Condó, and A. J. Tolley

Appl. Phys. Lett. 86, 191914 (2005); http://dx.doi.org/10.1063/1.1927710 (3 pages) | Cited 3 times

Online Publication Date: 5 May 2005

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180 nm SiO2 layers on Si (100) were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature (900–1100 °C) annealing, an array of β-Sn islands epitaxially attached to the Si was observed at the SiO2/Si(100) interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2/Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape.
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68.35.Fx Diffusion; interface formation
68.55.A- Nucleation and growth
66.30.Ny Chemical interdiffusion; diffusion barriers
61.72.uf Ge and Si

Texture formation in FePt thin films via thermal stress management

P. Rasmussen, X. Rui, and J. E. Shield

Appl. Phys. Lett. 86, 191915 (2005); http://dx.doi.org/10.1063/1.1924889 (3 pages) | Cited 19 times

Online Publication Date: 5 May 2005

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The transformation variant of the fcc to fct transformation in FePt thin films was tailored by controlling the stresses in the thin films, thereby allowing selection of in- or out-of-plane c-axis orientation. FePt thin films were deposited at ambient temperature on several substrates with differing coefficients of thermal expansion relative to the FePt, which generated thermal stresses during the ordering heat treatment. X-ray diffraction analysis revealed preferential out-of-plane c-axis orientation for FePt films deposited on substrates with a similar coefficients of thermal expansion, and random orientation for FePt films deposited on substrates with a very low coefficient of thermal expansion, which is consistent with theoretical analysis when considering residual stresses.
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81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
81.40.Gh Other heat and thermomechanical treatments
61.05.cp X-ray diffraction

Simulations of composite carbon films with nanotube inclusions

M. G. Fyta and P. C. Kelires

Appl. Phys. Lett. 86, 191916 (2005); http://dx.doi.org/10.1063/1.1924881 (3 pages) | Cited 5 times

Online Publication Date: 5 May 2005

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We study the interfacial structure, stability, and elastic properties of composite carbon films containing nanotubes. Our Monte Carlo simulations show that van der Waals forces play a vital role in shaping up the interfacial geometry, producing a curved graphitic wall surrounding the tubes. The most stable structures are predicted to have intermediate densities, high anisotropies, and increased elastic moduli compared to pure amorphous carbon films.
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81.07.De Nanotubes
61.46.-w Structure of nanoscale materials
68.55.-a Thin film structure and morphology
62.25.-g Mechanical properties of nanoscale systems
68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties
81.40.Jj Elasticity and anelasticity, stress-strain relations
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure
62.20.D- Elasticity
62.20.Qp Friction, tribology, and hardness
68.35.Ct Interface structure and roughness

Why is iridium the best substrate for single crystal diamond growth?

Matthieu J. Verstraete and Jean-Christophe Charlier

Appl. Phys. Lett. 86, 191917 (2005); http://dx.doi.org/10.1063/1.1922571 (3 pages) | Cited 1 time

Online Publication Date: 6 May 2005

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The synthesis of heteroepitaxial monocrystalline diamond films has been of technological and scientific interest for several decades. Using chemical vapor deposition techniques, polycrystalline diamond has been successfully grown on many substrates. However, iridium emerges in providing highly oriented films, significantly better than any other transition metals. In the present work we propose an ab initio density functional study of the interaction of diamond with different substrates used experimentally. The origin of iridium’s specific behavior is investigated. The kinetics of carbon atoms in the substrate lattice is found to play a key role, determining the nucleation mechanisms and hence the quality of the final diamond film.
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68.55.A- Nucleation and growth

Green emission from Er-doped GaN powder

Huaqiang Wu, Carl B. Poitras, Michal Lipson, Michael G. Spencer, Janet Hunting, and Francis J. DiSalvo

Appl. Phys. Lett. 86, 191918 (2005); http://dx.doi.org/10.1063/1.1923175 (3 pages) | Cited 10 times

Online Publication Date: 6 May 2005

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Green light emission has been directly obtained from Er-doped GaN powder. Er is incorporated into GaN powder through the reaction between molten (Ga+Er) and NH3 at 950–1050 °C using Bi as a wetting agent. Photoexcitation with an Ar laser results in strong green emissions from two narrow lines at 537 and 558 nm, which are identified as Er transitions from the math and math levels to the math ground state. Microprobe analysis reveals that Er atoms are distributed across powder particles.
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81.07.Wx Nanopowders
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
61.72.uj III-V and II-VI semiconductors
82.80.-d Chemical analysis and related physical methods of analysis

Photoluminescence enhancement of Si nanocrystals embedded in SiO2 matrix by CeF3 doping

Y. C. Fang, Z. J. Zhang, Z. Q. Xie, Y. Y. Zhao, and M. Lu

Appl. Phys. Lett. 86, 191919 (2005); http://dx.doi.org/10.1063/1.1924892 (3 pages) | Cited 4 times

Online Publication Date: 6 May 2005

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Ce3+ ions were doped into Si nanocrystals (nc-Si) embedded in SiO2 matrix (nc-Si/SiO2) by evaporation of CeF3 powder onto the surface of nc-Si/SiO2 and followed by thermal annealing in nitrogen ambient at different temperatures. Photoluminescence (PL) properties of the doped samples were studied. It has been found that the PL intensity of nc-Si can be remarkably enhanced and the enhancement depends on the doping concentration. Photoluminescence excitation spectra of the doped and undoped nc-Si imply that the enhancement comes from energy transfer from Ce3+ ions to nc-Si when excitation wavelength ranges from 240 to 320 nm.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
78.55.Ap Elemental semiconductors
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
61.72.uf Ge and Si
61.72.S- Impurities in crystals
61.72.Cc Kinetics of defect formation and annealing
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