APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 86 / Issue 20 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 86, 201901 (2005); doi:10.1063/1.1928316 (3 pages)

Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)

P. Sivasubramani1, M. J. Kim1, B. E. Gnade1, R. M. Wallace1, L. F. Edge2, D. G. Schlom2, H. S. Craft3, and J.-P. Maria3

1Department of Electrical Engineering and Physics, University of Texas at Dallas, Richardson, Texas 75080
2Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802
3Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27606

View MapView Map

(Received 26 January 2005; accepted 19 April 2005; published online 9 May 2005)

We have evaluated the thermal stability of Al2O3/LaAlO3/Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.

© 2005 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

lanthanum compounds, silicon, elemental semiconductors, dielectric thin films, amorphous state, atomic force microscopy, X-ray diffraction, transmission electron microscopy, secondary ion mass spectra, polishing, crystallisation, rapid thermal annealing, thermal stability, diffusion

PACS

  • 77.84.Bw

    Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

  • 77.55.-g

    Dielectric thin films

  • 66.30.-h

    Diffusion in solids

  • 68.37.Ps

    Atomic force microscopy (AFM)

  • 61.43.Er

    Other amorphous solids

  • 81.65.Ps

    Polishing, grinding, surface finishing

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 79.20.Rf

    Atomic, molecular, and ion beam impact and interactions with surfaces

  • 68.37.Lp

    Transmission electron microscopy (TEM)

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.1928316

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

Publisher:

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    B.-E. Park and H. Ishiwara, Appl. Phys. Lett. 79, 806 (2001)APPLAB000079000006000806000001.

    S.-G. Lim, S. Kriventsov, T. N. Jackson, J. H. Haeni, D. G. Schlom, A. M. Balbashov, R. Uecker, P. Reiche, J. L. Freeouf, and G. Lucovsky, J. Appl. Phys. 91, 4500 (2002)JAPIAU000091000007004500000001.

    P. W. Peacock and J. Robertson, J. Appl. Phys. 92, 4712 (2002)JAPIAU000092000008004712000001.

    L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Holländer, and J. Schubert, Appl. Phys. Lett. 84, 726 (2004)APPLAB000084000005000726000001.

    M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 79, 2958 (2001)APPLAB000079000018002958000001.

    S. Guha, E. P. Gusev, H. O-Schmidt, M. Copel, L.-Å Ragnarsson, N. A. Bojarczuk, and P. Ronsheim, Appl. Phys. Lett. 81, 2956 (2002)APPLAB000081000016002956000001.

    L. F. Edge, D. G. Schlom, R. T. Brewer, Y. J. Chabal, J. R. Williams, S. A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Holländer, and J. Schubert, Appl. Phys. Lett. 84, 4629 (2004)APPLAB000084000023004629000001.

    T. Gougousi, M. J. Kelly, D. B. Terry, and G. N. Parsons, J. Appl. Phys. 93, 1691 (2003)JAPIAU000093000003001691000001.

    M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. 78, 1607 (2001)APPLAB000078000011001607000001.


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)
  2. Magnetic and electrical properties of Co2MnGa grown on GaAs (001)
  3. Surface oxide relationships to band bending in GaN
  4. RbCdF3:Mn2+: A potential ultraviolet dosimeter material
  5. Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon
Go to AIP Home
Copyright © American Institute of Physics
close