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23 May 2005

Volume 86, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 86, 213111 (2005); http://dx.doi.org/10.1063/1.1931027 (3 pages)

R. H. Miwa, W. Orellana, and A. Fazzio
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Light-induced order-of-magnitude decrease in the electric field for domain nucleation in MgO-doped lithium niobate crystals

C. L. Sones, M. C. Wengler, C. E. Valdivia, S. Mailis, R. W. Eason, and K. Buse

Appl. Phys. Lett. 86, 212901 (2005); http://dx.doi.org/10.1063/1.1929099 (3 pages) | Cited 16 times

Online Publication Date: 16 May 2005

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We report an order-of-magnitude reduction in the electric field required for domain nucleation in 1 mol % MgO-doped near-stoichiometric and 5 mol % MgO-doped congruently grown lithium niobate crystals induced by illumination from a focused continuous wave laser beam at wavelengths of 514, 488, and 457 nm. A smaller decrease of 31% is also observed for undoped congruently grown crystals. The effect is independent of the visible wavelengths explored. Light-controlled domain patterning is also demonstrated.
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77.80.Dj Domain structure; hysteresis
42.62.-b Laser applications
82.60.Nh Thermodynamics of nucleation
78.40.Ha Other nonmetallic inorganics

Current-conduction and charge trapping properties due to bulk nitrogen in HfOxNy gate dielectric of metal-oxide-semiconductor devices

Chin-Lung Cheng, Kuei-Shu Chang-Liao, Ching-Hung Huang, and Tien-Ko Wang

Appl. Phys. Lett. 86, 212902 (2005); http://dx.doi.org/10.1063/1.1935768 (3 pages) | Cited 8 times

Online Publication Date: 17 May 2005

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This work examined the effects of bulk nitrogen in HfOxNy gate dielectric on current-conduction and charge trapping of metal-oxide-semiconductor devices. The nitrogen concentration profiles in HfOxNy gate dielectric were adjusted by Hf target sputtered in an ambient of modulated nitrogen flow. The current-conduction mechanisms of HfOxNy film comprised of various nitrogen concentration profiles at the low- and high-electrical field were dominated by Schottky emission and Frenkel–Poole emission, respectively. The trap energy level involved in Frenkel–Pool conduction was estimated to be around 0.8 eV. Smaller stress-induced leakage current and flat-band voltage shift were obtained for devices with HfOxNy dielectric containing less bulk nitrogen, attributable to less interface strain∕stress and bulk trap.
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85.30.-z Semiconductor devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
77.55.-g Dielectric thin films
72.20.Ht High-field and nonlinear effects
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Low-temperature growth of high-quality lead zirconate titanate thin films by 28 GHz microwave irradiation

Z. J. Wang, H. Kokawa, H. Takizawa, M. Ichiki, and R. Maeda

Appl. Phys. Lett. 86, 212903 (2005); http://dx.doi.org/10.1063/1.1935748 (3 pages) | Cited 22 times

Online Publication Date: 17 May 2005

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Pb(ZrxTi1−x)O3 (PZT) thin films were coated on Pt/Ti/SiO2/Si substrates by a sol-gel method and then crystallized by 28 GHz microwave irradiation. The elevated temperature generated by microwave irradiation to obtain the perovskite phase is only 480 °C, which is significantly lower than that of conventional thermal processing. X-ray diffraction analysis indicated that the PZT films crystallized well in the perovskite phase. A scanning electron microscopy image showed that the film has a spherulite grain structure and most of the grains are approximately 2 μm in size. The average values of the remanent polarization, coercive field, dielectric constant, and loss of the PZT films are 40 μC/cm2, 50 kV/cm, 1100, and 004, respectively. It is clear that microwave irradiation is effective for obtaining well-crystallized PZT films with good properties at low temperatures.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
77.80.-e Ferroelectricity and antiferroelectricity
75.70.Ak Magnetic properties of monolayers and thin films
61.80.-x Physical radiation effects, radiation damage
61.82.Ms Insulators
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
61.72.-y Defects and impurities in crystals; microstructure
64.70.D- Solid-liquid transitions
77.22.Gm Dielectric loss and relaxation
77.22.Ej Polarization and depolarization
77.22.Ch Permittivity (dielectric function)

Enhanced in-plane ferroelectricity in Ba0.7Sr0.3TiO3 thin films grown on MgO (001) single-crystal substrate

D. Y. Wang, Y. Wang, X. Y. Zhou, H. L. W. Chan, and C. L. Choy

Appl. Phys. Lett. 86, 212904 (2005); http://dx.doi.org/10.1063/1.1938247 (3 pages) | Cited 25 times

Online Publication Date: 17 May 2005

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Highly oriented Ba0.7Sr0.3TiO3 thin films were grown on MgO (001) single-crystal substrate using pulsed-laser deposition and the in-plane ferroelectric properties of the film were evaluated. X-ray diffraction characterization revealed a good crystallinity and tensile in-plane stress in the film. A well-defined ferroelectric hysteresis loop with Pr = 9.5 μC/cm2 was observed along the (100) direction, which implied an enhanced in-plane ferroelectricity in the Ba0.7Sr0.3TiO3 thin film in comparison with the Ba0.7Sr0.3TiO3 ceramics. Curie temperature of the film was found to be ∼ 88 °C, which is nearly 50 °C higher than that of the Ba0.7Sr0.3TiO3 ceramics. The butterfly-shaped C‐V characteristic curve also evidenced the enhanced in-plane ferroelectric property in the film, and a large dielectric tunability of 69% was found at 1 MHz under a moderate dc bias field. The observation of enhanced ferroelectricity along the in-plane direction in the highly oriented Ba0.7Sr0.3TiO3 thin film was explained in terms of the increased tetragonality (a/c = 1.016) induced by the lattice misfit strain.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.55.-g Dielectric thin films
77.80.Dj Domain structure; hysteresis
77.80.B- Phase transitions and Curie point
68.60.Bs Mechanical and acoustical properties
81.15.Fg Pulsed laser ablation deposition

Domain structure control of (001)/(100)-oriented epitaxial Pb(Zr,Ti)O3 films grown on (100)cSrRuO3/(100)SrTiO3 substrates

Yong Kwan Kim, Hitoshi Morioka, Risako Ueno, Shintaro Yokoyama, and Hiroshi Funakubo

Appl. Phys. Lett. 86, 212905 (2005); http://dx.doi.org/10.1063/1.1938250 (3 pages) | Cited 18 times

Online Publication Date: 17 May 2005

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The domain structure and electrical properties were systematically investigated in (001)/(100)-oriented tetragonal epitaxial Pb(Zr0.35,Ti0.65)O3 thin films grown on (100)cSrRuO3/(100)SrTiO3 substrates by metalorganic chemical vapor deposition. The wide range of domain structures with various volume fractions of c-domains from 0.05 to 1.0 was systematically controlled by changing the growth temperature from 380 to 540 °C and the film thickness from 50 to 380 nm, while keeping the other processing conditions the same. Reducing the deposition temperature and∕or increasing the film thickness reduced the population of c-domains. The relative dielectric constant ( ≈ 500) of the a-domain dominant films (volume fraction of c-axis-oriented domains, VC ≈ 0.05) was larger than that ( ≈ 300) of the c-domain dominant ones (VC ≈ 1.0). In the c-domain dominant region, the saturation and remanent polarization changed linearly with the volume fraction of c-domains. In the a-domain dominant region, they showed extraordinary large values, suggesting that a-domain switching makes a large contribution in this region.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
77.80.Dj Domain structure; hysteresis
77.55.-g Dielectric thin films
77.22.Ch Permittivity (dielectric function)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology

Environment of hafnium and silicon in Hf-based dielectric films: An atomistic study by x-ray absorption spectroscopy and x-ray diffraction

J. Morais, L. Miotti, K. P. Bastos, S. R. Teixeira, I. J. R. Baumvol, A. L. P. Rotondaro, J. J. Chambers, M. R. Visokay, L. Colombo, and M. C. Martins Alves

Appl. Phys. Lett. 86, 212906 (2005); http://dx.doi.org/10.1063/1.1935042 (3 pages) | Cited 13 times

Online Publication Date: 19 May 2005

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The atomic structure of HfSiO and HfSiON was investigated before and after thermal annealing using x-ray diffraction and x-ray absorption spectroscopy. In HfSiO, the Hf atoms are arranged in a monoclinic HfO2 structure with Hf as second nearest neighbors, while Si is in a SiO2 environment. Thermal annealing induces crystallization of HfSiO with subtle changes in Hf–Hf distances. In the case of HfSiON, a stable structure is observed around the Hf atoms, which remains unaffected after annealing. Nitrogen is present in the first coordination shell of the Hf atoms, with Si in a SiON environment.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
77.55.-g Dielectric thin films
78.70.Dm X-ray absorption spectra
81.40.Gh Other heat and thermomechanical treatments

Nanometer-scale crystallization of thin HfO2 films studied by HF-chemical etching

Shinji Fujii, Noriyuki Miyata, Shinji Migita, Tsuyoshi Horikawa, and Akira Toriumi

Appl. Phys. Lett. 86, 212907 (2005); http://dx.doi.org/10.1063/1.1939073 (3 pages) | Cited 8 times

Online Publication Date: 20 May 2005

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We used a HF-chemical etching process to examine crystalline structures in thin HfO2 films grown by metal organic chemical vapor deposition at 350–550 °C. Nanometer-scale crystalline HfO2 nuclei were identified from all the HfO2 films. The nucleus density exponentially increased with increasing deposition temperature, but the diameter of the nuclei did not depend on the deposition temperature. We propose that the crystallization of thin HfO2 film during growth proceeds in a patchwork process with the increase of the crystalline HfO2 nuclei.
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77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
64.70.K- Solid-solid transitions
77.55.-g Dielectric thin films
81.65.Cf Surface cleaning, etching, patterning
61.46.-w Structure of nanoscale materials
81.07.Bc Nanocrystalline materials
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