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23 May 2005

Volume 86, Issue 21, Articles (21xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 86, 213111 (2005); http://dx.doi.org/10.1063/1.1931027 (3 pages)

R. H. Miwa, W. Orellana, and A. Fazzio
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Propagation properties of guided waves in index-guided two-dimensional optical waveguides

Fuminori Kusunoki, Tsutom Yotsuya, Junichi Takahara, and Tetsuro Kobayashi

Appl. Phys. Lett. 86, 211101 (2005); http://dx.doi.org/10.1063/1.1935034 (3 pages) | Cited 54 times

Online Publication Date: 16 May 2005

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Index-guided two-dimensional (2D) optical waveguides are numerically studied to investigate propagation properties of guided optical waves. The 2D optical waveguide consists of a dielectric thin film sandwiched between two semi-infinite metals. We demonstrate that vertically localized 2D optical waves can be laterally confined and guided by index guiding when the dielectric film has a high-refractive-index core and claddings of a lower index. The index guiding provides good optical power transmittance, otherwise optical power is rapidly attenuated due to lateral beam divergence.
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42.79.Gn Optical waveguides and couplers
77.55.-g Dielectric thin films

Single-mode surface-emitting quantum-cascade lasers

C. Pflügl, M. Austerer, W. Schrenk, S. Golka, G. Strasser, R. P. Green, L. R. Wilson, J. W. Cockburn, A. B. Krysa, and J. S. Roberts

Appl. Phys. Lett. 86, 211102 (2005); http://dx.doi.org/10.1063/1.1929070 (3 pages) | Cited 19 times

Online Publication Date: 16 May 2005

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We present high-power surface-emitting second-order distributed feedback quantum-cascade lasers in GaAs and InP material systems. The GaAs device, grown by molecular-beam epitaxy, showed single-mode peak output powers of 3 W at 78 K in pulsed operation. With the InP-based devices, which are grown by metalorganic vapor phase epitaxy, we obtained single-mode peak output powers of 1 W at room temperature. These are the highest output powers for surface emission of quantum-cascade lasers reported so far. The InP-based distributed feedback lasers also have very low threshold current densities and are working well above room temperature.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

AlGaN films grown on (0001) sapphire by a two-step method

C. F. Shih, N. C. Chen, S. Y. Lin, and K. S. Liu

Appl. Phys. Lett. 86, 211103 (2005); http://dx.doi.org/10.1063/1.1931058 (3 pages) | Cited 10 times

Online Publication Date: 16 May 2005

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A two-step growth method, commonly used for GaN on sapphire, was applied to grow high-quality Al0.2Ga0.8N on sapphire. Comparing to the one grown on a low-temperature grown AlN buffer layer, the decomposition, recrystallization, and islands coalescence processes of the two-step growth increased the surface flatness, the crystal quality, the electrical property, suppressed the phase separation, and released the biaxial tensile strain. A 2.0 μm thick high-quality crack-free nearly GaN-free Al0.2Ga0.8N epilayer was obtained.
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81.05.Ea III-V semiconductors
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors
64.70.K- Solid-solid transitions
81.40.Lm Deformation, plasticity, and creep
62.20.F- Deformation and plasticity
68.35.B- Structure of clean surfaces (and surface reconstruction)

High-differential-quantum-efficiency, long-wavelength vertical-cavity lasers using five-stage bipolar-cascade active regions

R. Koda, C. S. Wang, D. D. Lofgreen, and L. A. Coldren

Appl. Phys. Lett. 86, 211104 (2005); http://dx.doi.org/10.1063/1.1931060 (3 pages) | Cited 1 time

Online Publication Date: 16 May 2005

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We present five-stage bipolar-cascade vertical-cavity surface-emitting lasers emitting at 1.54 μm grown monolithically on an InP substrate by molecular beam epitaxy. A differential quantum efficiency of 120%, was measured with a threshold current density of 767 A/cm2 and voltage of 4.49 V, only 0.5 V larger than 5×0.8 V, the aggregate photon energy. Diffraction loss study on deeply etched pillars indicates that diffraction loss is a major loss mechanism for such multiple-active region devices larger than 20 μm. We also report a model on the relationship of diffraction loss to the number of active stages.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

High-power continuous-wave midinfrared type-II “W” diode lasers

C. L. Canedy, W. W. Bewley, J. R. Lindle, I. Vurgaftman, C. S. Kim, M. Kim, and J. R. Meyer

Appl. Phys. Lett. 86, 211105 (2005); http://dx.doi.org/10.1063/1.1938256 (3 pages) | Cited 19 times

Online Publication Date: 16 May 2005

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A type-II “W” diode laser with five quantum well periods and emitting at λ ≈ 3.5 μm operated in cw mode to T = 218 K. A second device produced more than 500 mW of cw power at 80 K. The threshold current density at T = 78 K was 31 A/cm2, and pulsed operation was observed to 317 K. Improvements over previous single-stage devices for this wavelength range may be attributed in part to high growth quality and also to the incorporation of transition regions that smooth discontinuities in the conduction-band profile.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Dual lattice photonic-crystal beam splitters

Lijun Wu, M. Mazilu, J.-F. Gallet, and T. F. Krauss

Appl. Phys. Lett. 86, 211106 (2005); http://dx.doi.org/10.1063/1.1935770 (3 pages) | Cited 13 times

Online Publication Date: 17 May 2005

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Light propagation in photonic crystals (PhC) is both sensitive to incident angle and wavelength. By combining two different PhC lattices, we utilize this effect to demonstrate a wavelength-dependent beam splitter with enhanced angular separation. The first lattice acts as a superprism that separates the incoming light according to wavelength, whereas the second lattice acts as an angular amplifier. We obtain 90° angular separation for two wavelengths separated by 70 nm (1300 nm regime) in a structure that is less than 10 μm long.
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42.70.Qs Photonic bandgap materials
42.79.Fm Reflectors, beam splitters, and deflectors
42.79.Bh Lenses, prisms and mirrors

Variable-focus liquid lens by changing aperture

Hongwen Ren and Shin-Tson Wu

Appl. Phys. Lett. 86, 211107 (2005); http://dx.doi.org/10.1063/1.1935749 (3 pages) | Cited 24 times

Online Publication Date: 17 May 2005

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We propose an adaptive liquid-filled lens, which consists of an elastic membrane, a solid plate, and an annular sealing ring; a liquid with a fixed volume stored in lens chamber. The key part is the annular sealing ring which looks like an iris diaphragm. The surfaces of annular sealing ring are sealed with an elastic membrane. The radius of the annular sealing ring is changeable. By tuning the radius of the annular sealing ring, the stored liquid in the lens will be redistributed, thus changing the curvature of the elastic membrane. Therefore, the lens cell causes light to converge or diverge. A liquid lens with a positive variable focus was demonstrated, this kind of lens has the advantages of simple fabrication process, compact structure, easy operation, and low cost.
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42.79.Bh Lenses, prisms and mirrors
42.15.Eq Optical system design

Integrated liquid crystal optical switch based on total internal reflection

Ailing Zhang, Kam Tai Chan, M. S. Demokan, Victor W. C. Chan, Philip C. H. Chan, Hoi S. Kwok, and Andy H. P. Chan

Appl. Phys. Lett. 86, 211108 (2005); http://dx.doi.org/10.1063/1.1935751 (3 pages) | Cited 16 times

Online Publication Date: 17 May 2005

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An optical switch structure which combines a planar lightwave circuit and liquid crystal is proposed and experimentally demonstrated. The switching is realized by inducing total internal reflection through controlling the refractive index of the liquid crystal. The principle and the design of the integrated optical switch are described. Experimental results suggest that anchoring of the liquid crystal molecules on nonplanar structures is very crucial in affecting the switching performance.
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42.82.Bq Design and performance testing of integrated-optical systems
42.79.Kr Display devices, liquid-crystal devices
42.65.Pc Optical bistability, multistability, and switching, including local field effects

Single-mode 1.27 μm InGaAs vertical cavity surface-emitting lasers with temperature-tolerant modulation characteristics

Marek Chacinski, Richard Schatz, Olle Kjebon, Mattias Hammar, Rickard Marcks von Würtemberg, Sebastian Mogg, Petrus Sundgren, and Jesper Berggren

Appl. Phys. Lett. 86, 211109 (2005); http://dx.doi.org/10.1063/1.1935755 (3 pages) | Cited 4 times

Online Publication Date: 17 May 2005

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The dynamic performance of InGaAs/GaAs 1.27 μm single-mode vertical cavity surface emitting lasers (VCSELs) is presented. In order to reach such a long wavelength, the devices utilize highly strained double-quantum wells and a large detuning between the material gain peak and cavity resonance. It is found that the large detuning improves the temperature stability of both static and modulation characteristics. A resonance frequency of 7.8–9.5 GHz and optical power of 0.30 mW in fiber was maintained throughout the investigated temperature range of 20–90 °C. The intrinsic response of the device suggests that long-wavelength InGaAs/GaAs VCSELs have the potential to be used as low cost uncooled optical transmitters at 10 Gbit/s.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Ultrafast metal-semiconductor-metal photodetectors on low-temperature-grown GaN

M. Mikulics, M. Marso, P. Javorka, P. Kordoš, H. Lüth, M. Kočan, A. Rizzi, S. Wu, and R. Sobolewski

Appl. Phys. Lett. 86, 211110 (2005); http://dx.doi.org/10.1063/1.1938004 (3 pages) | Cited 5 times

Online Publication Date: 17 May 2005

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We have fabricated and characterized ultrafast metal-semiconductor-metal photodetectors based on low-temperature-grown (LT) GaN. The photodetector devices exhibit up to 200 kV/cm electric breakdown fields and subpicosecond carrier lifetime. We recorded as short as 1.4-ps-wide electrical transients using 360-nm-wavelength and 100-fs-duration laser pulses, that is corresponding to the carrier lifetime of 720 fs in our LT GaN material.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.05.Ea III-V semiconductors
85.30.-z Semiconductor devices

Fabry–Perot Gunn laser

S. Chung and N. Balkan

Appl. Phys. Lett. 86, 211111 (2005); http://dx.doi.org/10.1063/1.1937995 (2 pages) | Cited 2 times

Online Publication Date: 17 May 2005

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A truly monopolar GaAs Fabry–Perot cavity Gunn laser is demonstrated. The device is grown by metalorganic chemical vapor deposition on a semi-insulating GaAs substrate and consists of an n = 4.6×1017 cm−3 doped GaAs active layer sandwiched between the AlxGa1−xAs (x = 0.32) waveguiding layers. The operation of the device is based on the band to band recombination of impact-ionized nonequilibrium electron-hole pairs in the propagating high field domains in the Gunn diode, which is placed in a Fabry–Perot cavity, and biased above the threshold of negative differential resistance. Lasing from the device is observed at temperature T ≥ 95 K. The maximum power emitted from the device is P = 25.4 μW at λ = 840 nm and T = 95 K.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
78.60.Fi Electroluminescence
78.45.+h Stimulated emission

Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates

A. S. Shkolnik, L. Ya. Karachinsky, N. Yu. Gordeev, G. G. Zegrya, V. P. Evtikhiev, S. Pellegrini, and G. S. Buller

Appl. Phys. Lett. 86, 211112 (2005); http://dx.doi.org/10.1063/1.1938000 (3 pages) | Cited 5 times

Online Publication Date: 17 May 2005

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Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77–300 K on samples with varying sized self-assembled InAs∕GaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second decay component is considerably longer than the first one, and has been measured to be as long as 300 ns. This slow component is attributed to carrier recapturing and indirect radiative recombination processes.
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81.07.Ta Quantum dots
81.05.Ea III-V semiconductors
78.55.Cr III-V semiconductors
78.67.Hc Quantum dots
73.63.Kv Quantum dots
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Phased-array electro-optic steering of large aperture laser beams using ferroelectrics

David A. Scrymgeour, L. Tian, Venkatraman Gopalan, Daren Chauvin, and Kenneth L. Schepler

Appl. Phys. Lett. 86, 211113 (2005); http://dx.doi.org/10.1063/1.1935033 (3 pages) | Cited 5 times

Online Publication Date: 18 May 2005

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We present a device concept for scanning large (>1 cm) laser beams using a domain microengineered ferroelectric device. In our design, the large input beam is divided into smaller beamlets, which are then individually deflected through an angle, and then recombined in the far-field to reconstruct the large beam. As a demonstration of this concept, a five-stage cascaded rectangular domain micropatterned scanner device with 13 beamlet channels was fabricated in LiTaO3 and was demonstrated to deflect a 1.064 μm infrared laser beam by a total of 10.3° at 5.39 kV/mm.
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42.79.Fm Reflectors, beam splitters, and deflectors
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.15.Eq Optical system design
42.79.Ls Scanners, image intensifiers, and image converters
77.80.Dj Domain structure; hysteresis

Voltage-tunable four-color quantum-well infrared photodetectors

J. Li, K. K. Choi, and D. C. Tsui

Appl. Phys. Lett. 86, 211114 (2005); http://dx.doi.org/10.1063/1.1929086 (3 pages) | Cited 9 times

Online Publication Date: 18 May 2005

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A voltage-tunable four-color quantum-well infrared photodetector (QWIP) has been demonstrated. The advantages of this detector include widely separated peaks, narrow linewidths, and negligible spectral cross-talk. The four colors demonstrated are widely distributed from mid-infrared to long-infrared, and are centered at 4.5, 5.3, 8.3, and 10.4 μm. Each spectral peak is well defined and the corresponding linewidth is 0.58, 0.71, 0.83, and 1.01 μm, respectively (corresponding to Δλ/λ<0.14). The detector structure consists of two stacks of superlattice materials that are separated by a middle contact layer. Each material is designed to detect two specific wavelengths, tunable by the bias polarity. Four-color detection is achieved by applying different combinations of top and bottom bias relative to the common middle contact and reading out the optical signals sequentially from these two contacts. Using an appropriate bias sequence, the detector can be made sensitive to only one color at a time and the signals from the other colors are negligible. With this detection scheme, one can select different combinations of detection wavelengths and linewidths over a wide spectral range. This design thus greatly increases the flexibility of QWIPs in multicolor imaging.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.15.Eq Optical system design

Static and dynamic measurements of the α-factor of five-quantum-dot-layer single-mode lasers emitting at 1.3 μm on GaAs

A. Martinez, A. Lemaître, K. Merghem, L. Ferlazzo, C. Dupuis, A. Ramdane, J.-G. Provost, B. Dagens, O. Le Gouezigou, and O. Gauthier-Lafaye

Appl. Phys. Lett. 86, 211115 (2005); http://dx.doi.org/10.1063/1.1935754 (3 pages) | Cited 21 times

Online Publication Date: 18 May 2005

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The “material” and “device” linewidth enhancement factor α of five-quantum-dot (QD)-layer single-mode lasers emitting at 1.3 μm are investigated using two methods. The Hakki–Paoli method associated with pulsed analysis of Fabry–Perot modes below threshold demonstrates a record value of 0.7 at 1295 nm. High-frequency current modulation experiments showed a value of 2.0 just above threshold at 1.3 μm with a steady increase with the current. Dynamic measurements on a three-QD layer device, with a reduced ground state optical gain, showed a similar increase of α with current but at a higher rate.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Over 3 W high-efficiency vertical-external-cavity surface-emitting lasers and application as efficient fiber laser pump sources

L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, M. Kolesik, J. V. Moloney, T. Qiu, A. Schülzgen, N. Peyghambarian, W. Stolz, S. W. Koch, and J. T. Murray

Appl. Phys. Lett. 86, 211116 (2005); http://dx.doi.org/10.1063/1.1935756 (3 pages) | Cited 10 times

Online Publication Date: 18 May 2005

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We report on the design and fabrication of high-power, high-brightness diode-pumped vertical-external-cavity surface-emitting lasers. Over 3 W continuous wave fundamental transverse mode (TEM00) output at 980 nm with a high slope efficiency of 44% is demonstrated at room temperature. The diffraction-limited beam with M2 factor of 1.15 at high-power operation is achieved. A vertical-external-cavity surface-emitting laser operating near 976 nm with a diffraction-limited beam is used to pump the core of 3 cm long Er/Yb-codoped single-mode phosphate fiber lasers. An output power in excess of 250 mW at 1535 nm with a slope efficiency of 29% is obtained without any cooling.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Wd Fiber lasers

Mechanisms of dynamic range limitations in GaAs∕AlGaAs quantum-cascade lasers: Influence of injector doping

V. D. Jovanović, D. Indjin, N. Vukmirović, Z. Ikonić, P. Harrison, E. H. Linfield, H. Page, X. Marcadet, C. Sirtori, C. Worrall, H. E. Beere, and D. A. Ritchie

Appl. Phys. Lett. 86, 211117 (2005); http://dx.doi.org/10.1063/1.1937993 (3 pages) | Cited 43 times

Online Publication Date: 18 May 2005

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The influence of doping density on the performance of GaAs∕AlGaAs quantum-cascade lasers is presented. A fully self-consistent Schrödinger–Poisson analysis, based on a scattering rate equation approach, was employed to simulate the above threshold electron transport in laser devices. V-shaped local field domain formation was observed, preventing resonant subband level alignment in the high pumping-current regime. The resulting saturation of the maximal current, together with an increase of the threshold current, limits the dynamic working range under higher doping. Experimental measurements are in good agreement with the theoretical predictions.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
61.72.S- Impurities in crystals

One-step waveguide and optical circuit writing in photopolymerizable materials processed by two-photon absorption

Stéphane Klein, Alberto Barsella, Hervé Leblond, Hervé Bulou, Alain Fort, Chantal Andraud, G. Lemercier, J. C. Mulatier, and Kokou Dorkenoo

Appl. Phys. Lett. 86, 211118 (2005); http://dx.doi.org/10.1063/1.1915525 (3 pages) | Cited 24 times

Online Publication Date: 20 May 2005

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Two-photon absorption process is known to be a convenient tool to create three-dimensional microstructures in photopolymerizable materials. In this context, we have fabricated stable optical waveguides. The features of these waveguides (in particular, transmission losses) have been compared to the results of numerical simulations. We have also demonstrated the possibility of connecting two optical fibers via a curved guide and to realize Y splitters. The technique allows one to fabricate operational integrated optical circuits in photopolymerizable resins.
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42.81.Bm Fabrication, cladding, and splicing
42.82.Et Waveguides, couplers, and arrays
42.70.Jk Polymers and organics
42.81.Dp Propagation, scattering, and losses; solitons
42.79.Fm Reflectors, beam splitters, and deflectors
42.81.Qb Fiber waveguides, couplers, and arrays

Prism coupled terahertz waveguide sensor

C. Rau, G. Torosyan, R. Beigang, and Kh. Nerkararyan

Appl. Phys. Lett. 86, 211119 (2005); http://dx.doi.org/10.1063/1.1940127 (3 pages) | Cited 8 times

Online Publication Date: 20 May 2005

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A simple THz waveguide element has been used as a sensitive sensor for adsorbates on surfaces. The evanescent wave from total internal reflection off a silicon prism was used to couple pulsed THz radiation frequency selectively into the waveguide. The coupled frequencies were determined via time domain spectroscopy and react sensitively to any changes of thickness or phase shift upon reflection. In particular, the sensitivity to phase shifts makes this waveguide sensor attractive for the detection of very thin adsorbates. Typical sensitivity and reliability limits for the detection of adsorbates are discussed.
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42.79.Gn Optical waveguides and couplers
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
07.57.Pt Submillimeter wave, microwave and radiowave spectrometers; magnetic resonance spectrometers, auxiliary equipment, and techniques
42.82.Gw Other integrated-optical elements and systems
42.79.Bh Lenses, prisms and mirrors
82.80.-d Chemical analysis and related physical methods of analysis

High-gain multipass noncollinear optical parametric chirped pulse amplifier

Yuriy Stepanenko and Czesław Radzewicz

Appl. Phys. Lett. 86, 211120 (2005); http://dx.doi.org/10.1063/1.1940132 (3 pages) | Cited 14 times

Online Publication Date: 20 May 2005

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We demonstrate a multipass noncollinear optical parametric chirped pulse amplifier seeded by pulses from a femtosecond Ti:sapphire oscillator and pumped by a commercial Q-switched, frequency doubled Nd:yttrium–aluminum–garnet laser. Amplification higher than 106 and pulse energy exceeding 1.7 mJ are achieved with four passes through a single β-barium borate crystal. Good beam quality and high gain, together with broad amplification bandwidth, make it an attractive alternative to Ti:sapphire chirped pulse amplifier systems.
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42.65.Yj Optical parametric oscillators and amplifiers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

1.55 μm GaNAsSb photodetector on GaAs

H. Luo, J. A. Gupta, and H. C. Liu

Appl. Phys. Lett. 86, 211121 (2005); http://dx.doi.org/10.1063/1.1940722 (3 pages) | Cited 10 times

Online Publication Date: 20 May 2005

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We report a GaNAsSb p-i-n photodetector operating in the 1.55-μm-wavelength region. The device consists of two undoped 70-Å GaN0.025As0.615Sb0.36 quantum wells sandwiched between p- and n- GaAs barriers grown by molecular-beam epitaxy on GaAs substrate. At 1.55 μm, responsivities of 0.016 and 0.01 A/W are demonstrated for as-deposited and annealed samples, respectively, which correspond to absorption coefficients of 1.3×104 and 0.82×104 cm−1.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.40.Gh Other heat and thermomechanical treatments
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