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23 May 2005

Volume 86, Issue 21, Articles (21xxxx)

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Appl. Phys. Lett. 86, 213111 (2005); http://dx.doi.org/10.1063/1.1931027 (3 pages)

R. H. Miwa, W. Orellana, and A. Fazzio
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One-dimensional transport of In2O3 nanowires

Fei Liu, Mingqiang Bao, Kang L. Wang, Chao Li, Bo Lei, and Chongwu Zhou

Appl. Phys. Lett. 86, 213101 (2005); http://dx.doi.org/10.1063/1.1928323 (3 pages) | Cited 20 times

Online Publication Date: 16 May 2005

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The gate-dependent one-dimensional transport of single-crystal In2O3 nanowire field effect transistors is studied at low temperature by measuring current (I-V) and differential conductance (dIds/dVds). At a smaller positive gate bias, gaps at near-zero source-drain bias were observed for both current and differential conductance spectra due to the absence of the density of states in the source-drain energy window for a small Vds. The transport can be explained using conventional low-temperature field effect transistor theory. On the other hand, at a large gate bias when the Fermi energy of the nanowire moves up into its conduction band, the differential conductance of the semiconducting In2O3 nanowire exhibits zero-bias anomalies, following a power-law behavior.
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85.30.Tv Field effect devices

Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy

Jinichiro Noborisaka, Junichi Motohisa, and Takashi Fukui

Appl. Phys. Lett. 86, 213102 (2005); http://dx.doi.org/10.1063/1.1935038 (3 pages) | Cited 70 times

Online Publication Date: 16 May 2005

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We report on the fabrication of GaAs hexagonal nanowires surrounded by {110} vertical facets on a GaAs (111) B substrate using selective-area (SA) metalorganic vapor-phase epitaxial (MOVPE) growth. The substrate for SA growth was partially covered with thin SiO2, and a circular mask opening with a diameter d0 of 50–200 nm was defined. After SA-MOVPE, GaAs nanowires with a typical diameter d ranging from 50 to 200 nm and a height from 2 to 9 μm were formed vertically on the substrate without any catalysts. The size of the nanowire depends on the growth conditions and the opening size of the masked substrate. A possible growth mechanism is also discussed.
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81.05.Ea III-V semiconductors
81.07.-b Nanoscale materials and structures: fabrication and characterization
68.65.La Quantum wires (patterned in quantum wells)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.16.-c Methods of micro- and nanofabrication and processing

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field

James W. Robinson, James H. Rice, Kwan H. Lee, Jong H. Na, Robert A. Taylor, David G. Hasko, Rachel A. Oliver, Menno J. Kappers, Colin J. Humphreys, and G. Andrew D. Briggs

Appl. Phys. Lett. 86, 213103 (2005); http://dx.doi.org/10.1063/1.1935044 (3 pages) | Cited 26 times

Online Publication Date: 16 May 2005

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The effect of an externally applied lateral electric field upon an exciton confined in a single InGaN quantum dot is studied using microphotoluminescence spectroscopy. The quantum-confined Stark effect causes a shift in the exciton energy of more than 5 meV, accompanied by a reduction in the exciton oscillator strength. The shift has both linear and quadratic terms as a function of the applied field.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
78.20.Jq Electro-optical effects
73.21.La Quantum dots
71.35.-y Excitons and related phenomena

Fabrication and characterization of 1.1 GHz blade nanoelectromechanical resonator

V. Agache, B. Legrand, D. Collard, L. Buchaillot, and H. Fujita

Appl. Phys. Lett. 86, 213104 (2005); http://dx.doi.org/10.1063/1.1929873 (3 pages) | Cited 6 times

Online Publication Date: 16 May 2005

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An electromechanical resonator based on a blade geometry is proposed in this letter. This particular geometry allows self-alignment of the mechanical resonator structure to its lateral electrodes while achieving high eigenfrequencies in the GHz range. This letter reports both the fabrication process of the device and measurements in order to extract its mechanical response according to a lateral flexural solicitation. A mixing setup characterization is performed in order to suppress direct capacitive coupling feedthrough from the output current measurement and enable the effective quality factor extraction.
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85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film

Yong Shin Kim, Seung-Chul Ha, Kyuwon Kim, Haesik Yang, Sung-Yool Choi, Youn Tae Kim, Joon T. Park, Chang Hoon Lee, Jiyoung Choi, Jungsun Paek, and Kwangyeol Lee

Appl. Phys. Lett. 86, 213105 (2005); http://dx.doi.org/10.1063/1.1929872 (3 pages) | Cited 72 times

Online Publication Date: 17 May 2005

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Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide (WO2.72) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 °C. While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 °C as expected for n-type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 °C. Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric WO2.72.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.66.Bi Elemental solids
61.66.Dk Alloys
73.61.-r Electrical properties of specific thin films

Structure and luminescence of pyramid-shaped CdSe nanostructures grown by metalorganic chemical vapor deposition

C. X. Shan, Z. Liu, C. M. Ng, and S. K. Hark

Appl. Phys. Lett. 86, 213106 (2005); http://dx.doi.org/10.1063/1.1937998 (3 pages) | Cited 10 times

Online Publication Date: 17 May 2005

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Sharply pointed pyramidal CdSe nanostructures were grown on Si substrates by metalorganic chemical vapor deposition using Au as a catalyst. Scanning electron microscopy analysis confirms their shape; x-ray diffraction, in combination with electron diffraction, reveals that they have the zinc blende structure and are single crystalline. Photoluminescence measurements on individual pyramids at room temperature show an intense near-band edge emission, confirming their good optical quality. Having the same zinc blende structure as ZnSe, these CdSe pyramids are potentially useful for fabricating nanometer-scaled II–VI heterostructures.
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81.05.Dz II-VI semiconductors
81.07.Bc Nanocrystalline materials
61.46.-w Structure of nanoscale materials
78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
78.55.Et II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.37.Hk Scanning electron microscopy (SEM) (including EBIC)

Initial stages of silicon anodization in the transition regime: Nanoparticle formation

T. Nychyporuk, V. Lysenko, B. Gautier, and D. Barbier

Appl. Phys. Lett. 86, 213107 (2005); http://dx.doi.org/10.1063/1.1931061 (3 pages) | Cited 7 times

Online Publication Date: 17 May 2005

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Controlled formation of a monolayer of separated Si nanoparticles at the surface of a Si wafer using extremely short monopulsed anodization in the transition regime is reported. The initial stages of the dynamics of formation of the nanoparticles are described in detail by using atomic force microscopy. Structural analysis of the height, diameter, and surface density of the nanoparticles with respect to anodization current density and anodization time has been performed.
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81.05.Cy Elemental semiconductors
81.07.Bc Nanocrystalline materials
81.65.-b Surface treatments
68.37.Ps Atomic force microscopy (AFM)

Synthesis and field-electron-emission behavior of aligned GaAs nanowires

C. Y. Zhi, X. D. Bai, and E. G. Wang

Appl. Phys. Lett. 86, 213108 (2005); http://dx.doi.org/10.1063/1.1938248 (3 pages) | Cited 14 times

Online Publication Date: 17 May 2005

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Large-area highly aligned GaAs nanowires were synthesized directly by etching GaAs wafer covered with Au film using H plasma. The characterizations by scanning electron microscopy and transmission electron microscopy reveal that the as-grown nanowires are uniform in distribution and the individual nanowires are well crystallized. The field-electron-emission behavior of the GaAs nanowire was studied and a low turn-on field of 2.0 V/μm was achieved, which suggests its potential application as cold electron sources. The mechanism for field-emission enhancement is also discussed.
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79.70.+q Field emission, ionization, evaporation, and desorption
68.65.La Quantum wires (patterned in quantum wells)
81.65.Cf Surface cleaning, etching, patterning
61.46.-w Structure of nanoscale materials

Magnetized/charged MgH2-based hydrogen storage materials

Muneyuki Tsuda, Wilson Agerico Diño, Hideaki Kasai, and Hiroshi Nakanishi

Appl. Phys. Lett. 86, 213109 (2005); http://dx.doi.org/10.1063/1.1931045 (3 pages) | Cited 4 times

Online Publication Date: 17 May 2005

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We propose two methods to facilitate the Mg–H bond cleavage of magnesium hydride MgH2. We found via density functional calculations that Mn (or Fe), when inserted between two MgH2, exhibits a much higher catalytic activity than the other 3d transition metal elements because of the induced spin polarization of the MgH2. We also found that an ionized MgH2 (MgH2+) has considerably softer Mg–H bonds. We can thus significantly reduce the H2 desorption temperatures from MgH2 to practical levels, ∼ 400 K, by forming an alloy hydride with Mn (or Fe), and/or ionizing the MgH2.
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84.60.-h Direct energy conversion and storage
68.43.Mn Adsorption kinetics
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Phonon characteristics and cathodolumininescence of boron nitride nanotubes

Chunyi Zhi, Yoshio Bando, Chengchun Tang, Dmitri Golberg, Rongguo Xie, and Takashi Sekigushi

Appl. Phys. Lett. 86, 213110 (2005); http://dx.doi.org/10.1063/1.1938002 (3 pages) | Cited 44 times

Online Publication Date: 18 May 2005

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Large quantities of highly pure boron nitride nanotubes (BNNTs) are synthesized through a carbon-free method. Nanotube phonon features are investigated by Raman and Fourier-transformed infrared spectroscopies. Both methods indicate highly pure boron nitride phase. Intense ultraviolet light emission is observed when BNNTs are excited by an electron beam, which indicates that the present BNNTs have potential applications in ultraviolet optical devices.
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81.07.De Nanotubes
81.05.Ea III-V semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
78.60.Hk Cathodoluminescence, ionoluminescence
78.30.Fs III-V and II-VI semiconductors
78.40.Fy Semiconductors
78.67.Ch Nanotubes

Substrate-dependent electronic properties of an armchair carbon nanotube adsorbed on H/Si(001)

R. H. Miwa, W. Orellana, and A. Fazzio

Appl. Phys. Lett. 86, 213111 (2005); http://dx.doi.org/10.1063/1.1931027 (3 pages) | Cited 20 times

Online Publication Date: 18 May 2005

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The adsorption of an armchair single-walled carbon nanotube (CNT) on fully and partially hydrogenated Si(001) surfaces are studied from first-principles calculations. Our results indicate that the electronic properties of the adsorbed CNT can be ruled by the H concentration along the CNT–H/Si(001) contact region. On the fully hydrogenated Si(001), the CNT is physisorbed, preserving almost unchanged its metallic character. Removing a few of H atoms along the adsorption site, we find an enhancement on the CNT metallic character. In contrast, removing all the H atoms along the adsorption site, the adsorbed CNT becomes a semiconductor, exhibiting an energy gap. These results suggest that armchair CNTs adsorbed on H/Si(001) could be transformed into metal–semiconductor junctions by grading the H concentration along the CNT–surface interface.
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81.07.De Nanotubes
68.43.Mn Adsorption kinetics
73.22.-f Electronic structure of nanoscale materials and related systems
68.43.Bc Ab initio calculations of adsorbate structure and reactions
71.20.Tx Fullerenes and related materials; intercalation compounds
71.15.-m Methods of electronic structure calculations

Phonon confinement effect of silicon nanowires synthesized by laser ablation

N. Fukata, T. Oshima, K. Murakami, T. Kizuka, T. Tsurui, and S. Ito

Appl. Phys. Lett. 86, 213112 (2005); http://dx.doi.org/10.1063/1.1931055 (3 pages) | Cited 24 times

Online Publication Date: 19 May 2005

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A gradual downshift and asymmetric broadening of the Si optical phonon peak were observed by Raman scattering measurements of continuously thermally oxidized silicon nanowires (SiNWs) synthesized by laser ablation. This downshift and broadening can be interpreted by the phonon confinement effect. Further thermal oxidation produced a reverse change; namely, an upshift of the optical phonon peak. This is considered to be due to compressive stress since this stress was relieved by removing the oxide layers formed around the SiNW cores, resulting in a downshift of the optical phonon peak.
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81.05.Cy Elemental semiconductors
63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
68.65.La Quantum wires (patterned in quantum wells)
42.62.-b Laser applications
81.16.Pr Micro- and nano-oxidation
81.65.Mq Oxidation
78.30.Am Elemental semiconductors and insulators
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Cobalt–polypyrrole–cobalt nanowire field-effect transistors

Hyun-Jong Chung, Hun Huy Jung, Yong-Sung Cho, Sungjun Lee, Jeong-Hoon Ha, Je Hyuk Choi, and Young Kuk

Appl. Phys. Lett. 86, 213113 (2005); http://dx.doi.org/10.1063/1.1940125 (3 pages) | Cited 15 times

Online Publication Date: 20 May 2005

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Cobalt–polypyrrole(PPy)–cobalt nanowires were fabricated electrochemically in single-wire form inside anodic aluminum oxide templates. These wires were isolated by dissolving the template with chromic acid. Grown cobalt segments at both ends reveal a polycrystalline structure of a hexagonal-closest-packed structure and their [001] directions are 16° off the wire axis. By patterning a gate on one side of the wire, field-effect transistors (FETs) were produced. The measured output and transfer characteristics are as good as or better than film FETs of PPy. The gain of the wire FET could be controlled with successive electrochemical doping of the PPy segment.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices
81.07.Vb Quantum wires
81.07.Pr Organic-inorganic hybrid nanostructures
68.65.La Quantum wires (patterned in quantum wells)
73.63.Nm Quantum wires
61.46.-w Structure of nanoscale materials
61.72.up Other materials
82.45.-h Electrochemistry and electrophoresis
81.16.-c Methods of micro- and nanofabrication and processing

Charging and emission effects of multiwalled carbon nanotubes probed by electric force microscopy

M. Zdrojek, T. Mélin, C. Boyaval, D. Stiévenard, B. Jouault, M. Wozniak, A. Huczko, W. Gebicki, and L. Adamowicz

Appl. Phys. Lett. 86, 213114 (2005); http://dx.doi.org/10.1063/1.1925782 (3 pages) | Cited 16 times

Online Publication Date: 20 May 2005

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Electrostatic properties of single-separated multiwalled carbon nanotubes (MWCNTs) deposited on a dielectric layer have been investigated by charge injection and electric force microscopy (EFM) experiments. We found that upon local injection from the biased EFM tip, charges delocalize over the whole nanotube length (i.e., 1–10 μm), consistent with a capacitive charging of the MWCNT-substrate capacitance. In addition, the insulating layer supporting the nanotubes is shown to act as a charge-sensitive plate for electrons emitted from the MWCNTs at low electric fields, thus allowing the spatial mapping of MWCNT field-emission patterns.
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81.07.De Nanotubes
79.70.+q Field emission, ionization, evaporation, and desorption
68.37.Ps Atomic force microscopy (AFM)
61.46.-w Structure of nanoscale materials

Stable single-atom contacts of zinc whiskers

P. Konrad, C. Bacca, E. Scheer, P. Brenner, A. Mayer-Gindner, and H. v. Löhneysen

Appl. Phys. Lett. 86, 213115 (2005); http://dx.doi.org/10.1063/1.1926408 (3 pages) | Cited 5 times

Online Publication Date: 20 May 2005

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We report low-temperature measurements of the electrical transport properties of single-atom and tunnel contacts of Zn. We present a variant of the mechanically controllable break-junction technique that comprises a whisker as the central part. This technique combines the possibility to fabricate reproducibly single-atom contacts and well-characterized electronic and lattice properties of the electrodes. From tunneling current-voltage characteristics, we deduce a well-pronounced quasiparticle spectrum for whiskers, while for standard “notched-wire” and thin-film break junctions the spectrum is smeared out.
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74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
81.07.Lk Nanocontacts
74.50.+r Tunneling phenomena; Josephson effects
74.25.F- Transport properties
68.70.+w Whiskers and dendrites (growth, structure, and nonelectronic properties)
74.25.Jb Electronic structure (photoemission, etc.)
74.78.-w Superconducting films and low-dimensional structures

Evidence of ion diffusion at room temperature in microcrystals of the Bi2Sr2CaCu2O8+δ superconductor

M. Truccato, C. Lamberti, C. Prestipino, and A. Agostino

Appl. Phys. Lett. 86, 213116 (2005); http://dx.doi.org/10.1063/1.1938251 (3 pages) | Cited 15 times

Online Publication Date: 20 May 2005

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We have studied Bi-2212 microcrystals aged at ambient conditions for 40 days. Combined x-ray absorption near edge structure and x-ray fluorescence measurements with micrometer space resolution show both an increase of Cu+ with respect to Cu2+ and an enrichment in Cu vs Bi and Sr cation content near the sample edges in the b-axis direction. A parallel study on an electrically contacted sample has indirectly detected the O loss, observing both a resistivity increase and an increase in sample thickness near the edges. We conclude that the O outdiffusion along the b axis is accompanied by Cu cation migration in the same direction.
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74.72.-h Cuprate superconductors
74.25.F- Transport properties
74.25.Gz Optical properties
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