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30 May 2005

Volume 86, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 86, 223902 (2005); http://dx.doi.org/10.1063/1.1938253 (3 pages)

Philip J. Lee, Paul J. Hung, Robin Shaw, Lily Jan, and Luke P. Lee
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Enhanced magnetic and bolometric sensitivity of La0.7Ce0.3MnO3 thin films due to 200 MeV Ag ion irradiation

R. J. Choudhary, Ravi Kumar, S. I. Patil, Shahid Husain, J. P. Srivastava, and S. K. Malik

Appl. Phys. Lett. 86, 222501 (2005); http://dx.doi.org/10.1063/1.1941479 (3 pages) | Cited 8 times

Online Publication Date: 24 May 2005

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The parameters for bolometric performance [temperature coefficient of resistance (TCR) and noise value] and magnetic sensitivity of pulsed-laser-deposited thin films of La0.7Ce0.3MnO3 and their dependence on the 200 MeV Ag ions irradiation are studied. It is observed that the TCR value and magnetic sensitivity can be tuned in different temperature regime by controlling the irradiation fluence value. It turns out that irradiation with a fluence value of 5×1010 ions/cm2 changes the TCR value in a positive direction and enhances magnetic sensitivity at room temperature, while irradiation with a fluence value of 1×1012 ions/cm2 enhances these parameters at 200 K. The observations are explained on the basis of structural and electrical transport modifications induced by the 200 MeV Ag ion irradiation.
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71.30.+h Metal-insulator transitions and other electronic transitions
72.70.+m Noise processes and phenomena
75.70.Ak Magnetic properties of monolayers and thin films
61.80.Jh Ion radiation effects

High critical current properties of MgB2 bulks prepared by a diffusion method

Shinya Ueda, Jun-ichi Shimoyama, Isao Iwayama, Akiyasu Yamamoto, Yukari Katsura, Shigeru Horii, and Kohji Kishio

Appl. Phys. Lett. 86, 222502 (2005); http://dx.doi.org/10.1063/1.1939071 (3 pages) | Cited 29 times

Online Publication Date: 24 May 2005

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Highly dense MgB2 bulks with high purity were synthesized by the newly developed PICT-diffusion method, starting from magnesium and boron which were separately packed in sealed stainless tubes. Critical current density, Jc, systematically improved with a decrease of grain size of the samples. A sample reacted at 800 °C for 60 h exhibited the highest Jc of ∼ 0.86 MA/cm2 at 20 K in self-field, which was almost three times higher than that of conventional porous MgB2 bulks prepared by the solid-state reaction. Besides an increase of effective current pass, small grains with 30–100 nm in size and good grain connectivity resulted in the dramatically enhanced Jc.
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74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
74.25.Sv Critical currents
81.40.Gh Other heat and thermomechanical treatments

Ferromagnetism in nanocrystalline epitaxial Co:TiO2 thin films

A. K. Pradhan, D. Hunter, J. B. Dadson, T. M. Williams, Kai Zhang, K. Lord, B. Lasley, R. R. Rakhimov, Jun Zhang, D. J. Sellmyer, U. N. Roy, Y. Cui, A. Burger, C. Hopkins, N. Pearson, et al.

Appl. Phys. Lett. 86, 222503 (2005); http://dx.doi.org/10.1063/1.1944209 (3 pages) | Cited 7 times

Online Publication Date: 25 May 2005

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We report on the observation of remarkable room-temperature ferromagnetism in nanocrystalline epitaxial Co:TiO2 films grown on sapphire (0001) substrates by a pulsed-laser deposition technique using high-density targets. The films were characterized by x-ray measurements, atomic force microscopy, micro-Raman, electron-paramagnetic resonance, and magnetization studies. The films exhibit three-dimensional islandlike growth that contains nanocrystalline particles. Our experimental results suggest that the remarkable ferromagnetism in Co:TiO2 films is controlled either by the interstitial Co2+ ions or small clusters, which are mainly present at the interface and on the surface of the films. Our work clearly indicates that Co interstitials and nanoclusters cause room-temperature ferromagnetism in Co-doped TiO2.
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75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
75.70.Ak Magnetic properties of monolayers and thin films
75.50.Tt Fine-particle systems; nanocrystalline materials
76.50.+g Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
76.30.-v Electron paramagnetic resonance and relaxation
61.72.J- Point defects and defect clusters
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
81.15.Fg Pulsed laser ablation deposition
78.30.Hv Other nonmetallic inorganics
78.66.Li Other semiconductors

Preparation of highly conductive Mn-doped Fe3O4 thin films with spin polarization at room temperature using a pulsed-laser deposition technique

Mizue Ishikawa, Hidekazu Tanaka, and Tomoji Kawai

Appl. Phys. Lett. 86, 222504 (2005); http://dx.doi.org/10.1063/1.1942640 (3 pages) | Cited 37 times

Online Publication Date: 25 May 2005

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We report on the preparation of MnxFe3−xO4 (x = 0, 0.1, or 0.5) epitaxial thin films using a pulsed-laser deposition technique. Conditions for modified film formation are discussed, in addition to their electrical and magnetic properties in relation to the potential development of room temperature spin electronics devices. The film with x = 0.1 could be fabricated at a higher substrate temperature (600 °C) than the Fe3O4 thin film without Mn doping. The doped films exhibited low resistivity of about 7.0×10−3(x = 0.1)–9.0×10−2(x = 0.5) Ω cm at room temperature. Moreover, a spin polarization of the carrier of MnxFe3−xO4 (x = 0, 0.1, or 0.5) films was confirmed at room temperature by examination of anomalous Hall coefficient measurements.
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75.50.Gg Ferrimagnetics
75.70.Ak Magnetic properties of monolayers and thin films
68.55.A- Nucleation and growth
81.15.Fg Pulsed laser ablation deposition
73.61.Ng Insulators
72.20.My Galvanomagnetic and other magnetotransport effects
61.72.S- Impurities in crystals
72.25.-b Spin polarized transport

Annealing temperature dependence of ferromagnetism of rutile Co–TiO2 (100)

J. W. Chai, J. S. Pan, S. J. Wang, C. H. A. Huan, J. S. Chen, and S. Xu

Appl. Phys. Lett. 86, 222505 (2005); http://dx.doi.org/10.1063/1.1942639 (3 pages) | Cited 4 times

Online Publication Date: 26 May 2005

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Co overlayers of ∼ 3 nm have been deposited at room temperature on rutile TiO2 (100) surfaces, followed by annealing to different temperatures. Ferromagnetic behavior has been observed for all samples, but the saturation magnetic moment (μS) per Co atom is seen to decrease with increasing annealing temperature up to 530 °C. In situ photoemission studies show that the reduction of the saturation magnetic moment is accompanied by Co oxidation at high annealing temperature. However, an annealing temperature of 700 °C leads to an increase of the saturation magnetic moment. At this temperature, the formation of an additional Co–Ti–O ternary compound phase is observed by high-resolution transmission electron microscopy. It is proposed that this phase is responsible for the increase of the saturation magnetic moment. The origin of ferromagnetism might be the same as that of Co-doped TiO2.
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75.50.Dd Nonmetallic ferromagnetic materials
75.50.Pp Magnetic semiconductors
61.72.Cc Kinetics of defect formation and annealing
75.30.Cr Saturation moments and magnetic susceptibilities
81.65.Mq Oxidation
79.60.Bm Clean metal, semiconductor, and insulator surfaces
68.37.Lp Transmission electron microscopy (TEM)

Magnetoelectric interactions in bilayers of yttrium iron garnet and lead magnesium niobate-lead titanate: Evidence for strong coupling in single crystals and epitaxial films

G. Srinivasan, C. P. De Vreugd, M. I. Bichurin, and V. M. Petrov

Appl. Phys. Lett. 86, 222506 (2005); http://dx.doi.org/10.1063/1.1943491 (3 pages) | Cited 8 times

Online Publication Date: 27 May 2005

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The nature of low-frequency magnetoelectric (ME) coupling has been investigated in bilayers of single crystal lead magnesium niobate-lead titanate (PMN-PT) and yttrium iron garnet (YIG). Samples with (001) PMN-PT and polycrystalline, single crystal, or epitaxial thin films of YIG were studied. The ME coupling is the weakest in bilayers with polycrystalline YIG. A dramatic strengthening of ME interactions occurs in samples with single crystal (111) YIG. The strongest ME coupling occurs in bilayers with (110) epitaxial YIG film. The voltage coefficients show significant variation with the orientation of the bias magnetic field H; it is maximum for H‖〈1math1〉 and is minimum for H‖〈001〉. The transverse coefficient increases linearly with increasing thickness of YIG film. Data analysis reveals that strong magnetomechanical coupling in thin film YIG is the cause of enhancement in the ME coupling.
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75.80.+q Magnetomechanical effects, magnetostriction
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
77.80.-e Ferroelectricity and antiferroelectricity
75.50.Dd Nonmetallic ferromagnetic materials
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