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13 Jun 2005

Volume 86, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 86, 241913 (2005); http://dx.doi.org/10.1063/1.1946181 (3 pages)

E. Placidi, F. Arciprete, V. Sessi, M. Fanfoni, F. Patella, and A. Balzarotti
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Depth-resolved analysis of ferroelectric domain structures in bulk LiNbO3 crystals by scanning force microscopy

T. Jungk and E. Soergel

Appl. Phys. Lett. 86, 242901 (2005); http://dx.doi.org/10.1063/1.1949286 (3 pages) | Cited 8 times

Online Publication Date: 7 June 2005

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Ferroelectric domains were written in congruently melting lithium niobate crystals (LiNbO3) by electrical field poling using a mask with circular openings. For the surface sensitive detection of the domains, we used scanning force microscopy. Thinning the crystal step-by-step reveals that the domains evolve from circular shape at the very surface to hexagonal shape at a depth of around 30 μm, demonstrating the impact of the crystal symmetry on the domain shape.
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77.84.Ek Niobates and tantalates
77.84.Cg PZT ceramics and other titanates
77.80.Dj Domain structure; hysteresis
77.22.Ej Polarization and depolarization
68.37.Ps Atomic force microscopy (AFM)

High-mobility pentacene organic field-effect transistors with a high-dielectric-constant fluorinated polymer film gate dielectric

Barbara Stadlober, Martin Zirkl, Michael Beutl, Günther Leising, Simona Bauer-Gogonea, and Siegfried Bauer

Appl. Phys. Lett. 86, 242902 (2005); http://dx.doi.org/10.1063/1.1946190 (3 pages) | Cited 47 times

Online Publication Date: 10 June 2005

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High-performance pentacene organic thin-film transistors with double layers of the terpolymer electret poly(vinylidene fluoride/tetrafluoroethylene/hexafluoropropylene) and the polymer poly(vinyl cinnamate) as a gate dielectric are reported. The electret is a high-k dielectric polymer with a static dielectric constant of ε = 14. The transistors show an intrinsic field-effect mobility in the range of μi = 1 cm2/V s and an on- to off-current ratio of about 105. High-k polymer gate dielectrics seem promising for organic nonvolatile memory and sensor field-effect transistors.
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85.30.Tv Field effect devices
77.22.Ch Permittivity (dielectric function)
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