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13 Jun 2005

Volume 86, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 86, 241913 (2005); http://dx.doi.org/10.1063/1.1946181 (3 pages)

E. Placidi, F. Arciprete, V. Sessi, M. Fanfoni, F. Patella, and A. Balzarotti
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Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices

Hyun-Tak Kim, Byung-Gyu Chae, Doo-Hyeb Youn, Gyungock Kim, Kwang-Yong Kang, Seung-Joon Lee, Kwan Kim, and Yong-Sik Lim

Appl. Phys. Lett. 86, 242101 (2005); http://dx.doi.org/10.1063/1.1941478 (3 pages) | Cited 55 times

Online Publication Date: 6 June 2005

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An abrupt first-order metal-insulator transition (MIT) as a current jump has been observed by applying a dc electric field to Mott insulator VO2-based two-terminal devices. The size of the jumps was measured to be asymmetrical depending on the direction of the applied voltage due to heating effects. The structure of VO2 is investigated by micro-Raman scattering experiments. An analysis of the Raman-active Ag modes at 195 and 222 cm−1, explained by pairing and tilting of V cations, and 622 cm−1, shows that the modes below a low compliance (restricted) current do not change when the MIT occurs, whereas a structural phase transition above the low compliance current is found to occur secondarily, due to heating effects in the device induced by the MIT. The MIT has applications in the development of high-speed and high-gain switching devices.
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71.27.+a Strongly correlated electron systems; heavy fermions
71.30.+h Metal-insulator transitions and other electronic transitions
78.30.Hv Other nonmetallic inorganics

Simultaneous electric and magnetic field induced nonvolatile memory

M. Quintero, A. G. Leyva, and P. Levy

Appl. Phys. Lett. 86, 242102 (2005); http://dx.doi.org/10.1063/1.1948535 (3 pages) | Cited 11 times

Online Publication Date: 6 June 2005

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We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence. Our data show that the electric effect (presumably related to the presence of inhomogeinities) is present in a broad temperature range (300–20 K), being observable even in a mostly homogeneous ferromagnetic state. In the temperature range in which low magnetic field determines the phase coexistence fraction, both effects, though related to different mechanisms, are found to determine multilevel nonvolatile memory capabilities simultaneously.
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85.75.Bb Magnetic memory using giant magnetoresistance
75.47.Lx Magnetic oxides
85.70.Li Other magnetic recording and storage devices (including tapes, disks, and drums)
75.50.Dd Nonmetallic ferromagnetic materials
75.60.-d Domain effects, magnetization curves, and hysteresis

Long-lived electron spins in InxGa1−xN multiquantum well

Seiji Nagahara, Munetaka Arita, and Yasuhiko Arakawa

Appl. Phys. Lett. 86, 242103 (2005); http://dx.doi.org/10.1063/1.1949280 (3 pages) | Cited 14 times

Online Publication Date: 6 June 2005

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We first observed spin relaxation at room temperature in InxGa1−xN multiquantum wells using spin-dependent pump and probe measurements. The spin lifetime increases with In molar fraction x. The observed spin lifetime obeys ∼ x3.3, which shows different behavior from typical results for D’yakonov-Perel’ and Elliott-Yafet processes involving the alloy scattering. The increase of In molar fraction induces indium-composition fluctuations, which cause the electron localization. The remarkable increase of the spin lifetime is due to the formation of quantum dots through the phase separation in InxGa1−xN multiquantum-well layers.
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72.25.Dc Spin polarized transport in semiconductors
78.67.De Quantum wells
78.55.Cr III-V semiconductors
64.75.-g Phase equilibria

Tunneling spectroscopy of metal-oxide-semiconductor field-effect transistor at low temperature

Mingqiang Bao, Fei Liu, Filipp Baron, Kang L. Wang, and Ruigang Li

Appl. Phys. Lett. 86, 242104 (2005); http://dx.doi.org/10.1063/1.1951055 (3 pages)

Online Publication Date: 8 June 2005

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Electron tunneling spectroscopy is used to study drain-source current spectra of metal-oxide-semiconductor field-effect transistors (MOSFETs). Measured at liquid helium temperature (4.2 K), experimental results reveal that as drain-source voltage (Vds) increases, the first derivative of drain-source current (or conductance) first decreases, then increases to a maximum and finally decreases again at higher Vds, which is different from the monotonous decreasing feature described by the conventional MOSFET theory. In addition, the measured MOSFET spectra show that there are fine features on the second derivative spectra, and these features may be used to extract trap information.
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85.30.Tv Field effect devices

Surface passivation of InAs(001) with thioacetamide

D. Y. Petrovykh, J. P. Long, and L. J. Whitman

Appl. Phys. Lett. 86, 242105 (2005); http://dx.doi.org/10.1063/1.1946182 (3 pages) | Cited 11 times

Online Publication Date: 9 June 2005

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We describe the passivation of InAs(001) surfaces with thioacetamide (CH3CSNH2 or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide (NH4)2Sx. Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.
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81.05.Ea III-V semiconductors
81.65.Rv Passivation
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.65.Mq Oxidation
68.47.Fg Semiconductor surfaces
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